WESTCODE SEMICONDUCTORS 35 D M@@ 9709955 0002431 3 MBWESB7-25~-.2/ Ge) WESTCODE @ | [ SEMICONDUCTORS TR355C Issue 2 July 1984 High Frequency Inverter Grade Capsule Thyristor Type R355C distributed amplified gate for high di/dt and low switching losses 1020 amperes average: up to 1200 volts VarwVprm Ratings (Maximum values at 125C Tj unless stated otherwise) RATING CONDITIONS SYMBOL ( 55C heatsink temperature 1020 A Average on-state current Half sine wave (double side cooled) hav) 85C heatsink temperature 355 A (single side cooled) R.M.S. on-state current 25C heatsink temperature, double side cooled kines) 2100 A Continuous on-state current 25C heatsink temperature, double side cooled bt 1620 A Peak one-cycle surge 10ms duration, 60% Vary re-applied sm (1) 18000 A (non-repetitive) on state current 10ms duration, Vas 10 volts bys i2} 19800 A Maximum permissible surge ener 10ms duration, Va < 10 volts Ht (2) 1960000 A?s Ps s g gy 3ms duration, Va< 10 volts It 1407000 A2 Peak forward gate current Anode positive with respect to cathode lego 36 A Peak forward gate voltage Anode positive with respect to cathode Vecm 16V Peak reverse gate voltage Vacom 5V Average gate power Pg 2W Peak gate power 100ps. pulse width Pom 120 W Rate of rise of off-state voltage To 80% Vprm gate open-circuit dv/dt *200V/ys Rate of rise of on-state current di/dt (1) 1000A/,s (repetitive) Gate drive 20 voits, 20 ohms with t, < lus. Rate of rise of on-state current Anode voltage > 80% Vorm di/dt (2) 1500A/us (non-repetitive) Operating temperature range Ths 40+ 125C Storage temperature range Tstg 40+ 150C Characteristics (Maximum values at 125C Tj unless stated otherwise) CHARACTERISTIC CONDITIONS SYMBOL Peak on-state voltage At 2000 A, ly Vim 2.02 V Forward conduction threshold voltage Vo 1.55 V Forward conduction slope resistance r 0.236 mQ Repetitive peak off-state current At Vorm lornm 100 mA Repetitive peak reverse current At Varo lnaam 100 mA Maximum gate current required to fire all devices let 300 mA Maximum gate voltage required to fire all devices } At 25C, V,=10V, Iy=2A { Vet 3V Maximum holding current hy 1A Maximum gate voltage which will not trigger any device Veo 0.25 V Stored charge lem = 1000A, dir/dt 60A/us Vem =50V, 50% chord value Orr 120 uC Circuit commutated turn-off time ley = 10004, 200V/us to 80% Voam}| ta 20-30 ps available down to dir/dt =60A/us, Van =5S0V) 20V/pus to 80% Vpay| ta typical 15-25 us Thermal resistance, junction to heat sink, Double side cooled Ri 0.032C/W for a device with a maximum forward volt Single side cooled nirhs] 0.064C/W drop characteristic VOLTAGE CODE HO2 HO04 HO6 HO08 H10 H12 Repetitive peak voltages Varm Vor Non-repetitive peak off-state voltage Vosm 200 400 600 800 1000 1200 Non-repetitive peak reverse blocking voltage | Vasm | 300 500 700 900 1100 1300 Ordering Information (Please quote device code as explained below 11 digits) R 3 5 5 C e@ee e e 0 dv/dt code to 80% Vprm Turn-off time Fixed Voltage Code C=20V/ys E = 100V/us H=30 us J=25 us type code (see ratings) D=50V/us F=200V/us K=20 zs L=15yus Typical code: R355CHO6FJO = 600 Vary 600 Vonm 200 V/us dv/dt to 80% Vpam 25 us turn-off 9000-3997 *Other values of dv/dt up to 1000 V/ys, and turn-off time may be available. |(a) (b) (c} (d) (e) (a) WESTCODE SEMICONDUCTORS INTRODUCTION The R355CH02-H12 series of fast, amplifying interdigitated thyristors in cold-weld housings are capable of high di/dt performance and have low reverse recovered charge. Where low turn-on and commutation losses are required this series will be ideal. NOTES ON THE RATINGS Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1500 A/s at any time during turn-on on a non-repetitive basis. For repetitive performance the on-state rate of rise of current must not exceed 1000 A/us at any time during turn-on. Note that these values of current rate of rise apply to the circuit external to the device and its specified snubber network and device current rates of rise will be higher. Square wave ratings These ratings are given for leading edge linear rates of rise of forward current of 100 and 500 A/us. Duty Cycle Lines The 100% duty cycle line appears on all these ratings. These frequency ratings are presented in the form that all duty cycles may be represented by straight parallel lines. Maximum operating Frequency The maximum operating frequency, fax, is set by the time required for the thyristor to turn off (tq) and for the off-state voltage to reach fuil value (tv), i.e. 1 toulse + tq +tv Energy per pulse characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the frequency ratings. Let E, be the Energy per pulse for a given current and pulse width, in joules. Then Way=E, xf. max > REVERSE RECOVERY LOSS On account of the number of circuit variables affecting reverse recovery voltage, no allowance for reverse recovery loss has been made in these ratings. The following procedure is recommended for use where it is necessary to include reverse recovery loss. Determination by Measurement From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be A joules per pulse. A new heat sink temperature can then be evaluated from: JAE Dd (b) (a) (b) 9709955 O000e43e MEWESBT-Q5-4y ry. 106 Tsink (new) = Tsink (original) -A ( + Rin X ) where r,=4.11 x 10-5/t t=duration of reverse recovery loss per pulse in microseconds A= Area under reverse loss waveform per pulse in joules (W.S.) f =rated frequency at the original heat sink temperature The total dissipation is now given by W tor) = Woriginal) +Axf Design Method In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses may be estimated from figure 7. A typical R-C snubber network is connected across the thyristor to control the transient reverse voltage waveform. Let E be the value of energy per reverse cycle in joules (figure 7). Let f be the operating frequency in Hz then Tgink New = Tsink Original ERy, x f where Tsink new is the required maximum heat sink temperature and Tginx Original is the heat sink temperature given with the frequency ratings. GATE DRIVE The recommended gate drive is 20 V, 20 ohms with a short-circuit current rise time of not more than 1 us. This gate drive must be applied when using the full di/dt capability of the device. THE DV/DT SUPPRESSION NETWORK The effect of a conventional resistor-capacitor snubber of 0.25 F 5 ohms has been included in these ratings and all rating di/dt values apply to the circuit external to the thyristor and its suppression network. NOTE 1 REVERSE RECOVERY LOSS BY MEASUREMENT This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the charge care must be taken to ensure that: a.c. coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. The measuring oscilloscope has adequate dynamic range typically 100 screen heights to cope with the initial forward current without overload.WESTCODE SEMICONDUCTORS 35E D MM 970595955 0002433 7 MEWESB TASHA 1 1 Ths = 85C 500 A/us square wa Ths = 85C 100 A/us square wa 10 0.1 0.1 N NI Z z oD oO oa] a S oa = 0.01 = 0.01 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 1 Frequency v. pulse width Figure 2 Frequency v. pulse width Ths = 55C Ths = 55C 500 A/yus 100 A/us square wav uare wav 10 10 1 0.1 0.1 N NI Z Zz = > ro @o a = S o 5 0.01 = 0.01 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 3 Frequency v. pulse width Figure 4 Frequency v. pulse widthWESTCODE SEMICONDUCTORS 35 D MM 9709955 gooe434 9 ME WESB 1-954 100 100 10 10 oO yn a 2 a 8 Tj = 125C 2 Tj = 125C 8g 500 A/ps 3 100 A/us a square wave a square wave & & D o 5 0.1 5 0.1 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 5 Energy/pulse v. pulse Figure 6 Energy/pulse v. pulse width width 1 snubber connected 0.25 nF 50 peak reverse voltage Vam = 0.67 Varm max. (804 volts) 0.3 0.1 300 8 0.03 a a 5 Q & E 0.01 10 20 50 100 200 500 commutating di/dt, A/ps Figure 7 Max. reverse recovery energy loss per pulse at 125C junction temperature and Vay = 804 volts.WESTCODE SEMICONDUCTORS 39E D MM 9709955 0002435 0 MMWESB 7-25-2/ 100 100 Ths = 85C sine wave 10 10 0.1 8 a nN 3 x= . & O > 3 Tj = 125C oO Qa 2 5 > sine wave = & oO o = 0.01 5S 0.1 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 8 Frequency v. pulse width Figure 9 Energy/pulse v. pulse width 200 100 Ths = 55C sine wave 10 100 1 90 77) 80 8 3 & 70 2 2 : 60 0.1 Bs a A > Oo < 2 8 oO ao a > 5 3 = 0.01 2 40 0.01 0.1 1 10 20 30 40 50 6070 80 100 200 pulse width, m.secs commutating di/dt, A/us Figure 10 Frequency v. pulse Figure 11 Maximum recovered width charge at 125C junction temperatureRE OATH eo ML MAAN Sainte Ln Fh Sa nto wee Sila mn met meen Ameer cy wh nen ae Eh ea Jrransient thermal impedance, C/w gate voltage, Vc, volts } a peak on-state current, amperes C 4 _ WESTCODE SEMICONDUCTORS SE 0.1 0.05 0.01 0.005 8 total peak half-sine surge current, 0.001 0.01 time, seconds Figure 12 Junction to heatsink transient thermal 0.1 1 10 k.amperes 100 10 impedance 18 16 Va pk. max. (Ig tr= 14 g d.c. max. 12 10 Pg max. (pulse) 8 120 W 6 4 tera lie within these curves 2 Pg max. d.c.=2 0 figure 15 0.1 0.3 0.5 1 3 5 10 30 gate current, Ig, amperes Figure 14 Gate characteristics at 25C junction temperature 10000 1000 100 1.2 1.8 on-state voitage, volts Figure 16 Limit on-state current at 125C 14 1.6 20 22 24 26 28 D ME 9709955 0002436 2 MEUESB T-Q5-Qy 107 a Qo 8 yr 106 = & a E 3 THYRISTOR DURING E ontrot ot angle} z 105 1 10 0.5 5 50 100 m.secs cycles at 50 Hz duration of surge Figure 13 Max. non-repetitive surge current at initial junction temperature 125C Note: This rating must not be interpreted as an intermittent rating 4 $ 3 5 $ o 2 > % = 1 8 o 3 > oO 2 2 ao 0 200is 400 gate current, Ic, milliamperes Figure 15 Gate triggering characteristics. Trigger points of all thyristors lie within the areas shown Gate drive load line must lie outside appropriate Ig/Vg rectangle g dimensions in mm (inches) Mounting force: 1900-2600 kgf Weight: 510 grams @ 74129} LOM 74 HEIGHT ow 03 (03 i) [ | L alg | | S = j= | == SS 1 ~~ @ 1.51 06F 08 wo ee | Phils 026x3 (0.88) 4x 12) 2 - ROL TO 200AC In the interest of product improvement, Westcode reserves the night to change specifications at any time without notice. WESTCODE SEMICONDUCTORS LTD P.O. Box 57 Chippenham Wiltshire SN15 1JL England Telephone Chippenham (0249) 654141 Telex 44751 4 HAWKER SIDDELEY Westinghouse Brake and Signal Co. Ltd. Printed by The Pheon Press, Sristol