Crystal Oscillator (SPXO) * Package size (7.0 mm x 5.0 mm x 1.3 mm) * Fundamental mode SPXO * Output: CMOS * Reference weight Typ.143 mg X1G0055710041xx [ 1 ] Product Number / Product Name / Marking (1-1) Product Number / Ordering Code X1G0055710041xx Last 2 digits code(xx) defines Quantity. The standard is "00", 1 000 pcs/Reel. (1-2) Product Name / Model Name SG-8018CA 30.000000 MHz TJHPA [ 2 ] Operating Range Parameter Supply voltage Operating temperature range CMOS load condition Symbol VCC GND T_use L_CMOS Specifications Min. 1.62 0 -40 - Typ. 0 +25 - [ 3 ] Frequency Characteristics Parameter Output frequency Frequency tolerance *1 Symbol fo f_tol Unit Max. 3.63 0 +105 15 V V C pF Conditions - (Unless stated otherwise [ 2 ] Operating Range) Specifications Min. -50 Typ. 30.000000 - Unit Max. +50 Conditions MHz - x10-6 T_use *1 Frequency tolerance includes Initial frequency tolerance, Frequency / temperature characteristics, Frequency / voltage coefficient Frequency / load coefficient and frequensy aging (+25 C. 10 years) [ 4 ] Electrical Characteristics Parameter Start-up time Current consumption Disable current Output voltage (Unless stated otherwise [ 2 ] Operating Range) Symbol t_str ICC I_dis VOH VOL Specifications Min. 90 % Vcc - Typ. 3.8 2.9 - Max. 3 4.4 3.5 10 % Vcc Unit ms mA mA V V Conditions t = 0 at 90 % Vcc No load condition, Vcc = 3.3 V OE = GND, Vcc = 3.3 V Io = -3 mA @Vcc = 3.3 V Io = 3 mA @Vcc = 3.3 V 20 % Vcc to 80 % Vcc Level, L_CMOS = 15 pF, Vcc = 3.3 V 80 % Vcc to 20 % Vcc Level, L_CMOS = 15 pF, Vcc = 3.3 V Rise time tr - - 6 ns Fall time tf - - 6 ns SYM V V tstp_oe tsta_oe tPJ 45 70 % Vcc - - 55 30 % Vcc 1 1 % V V s s 50 % Vcc Level, L_CMOS 15 pF - - 72.9 ps Offset freq.:12 kHz to 20 MHz, Vcc = 3.3 V Peak to Peak jitter tp-p - - 199.4 ps Clock cycle > 50 000, Vcc = 3.3 V RMS jitter tRMS - - 18.1 ps Clock cycle > 50 000, Vcc = 3.3 V Cycle to Cycle jitter tc-c - - 122.0 ps Clock cycle > 50 000, Vcc = 3.3 V Symmetry Input voltage Output disable time (OE) Output enable time (OE) Phase jitter OE terminal OE terminal OE terminal HIGH LOW OE terminal LOW HIGH [ For other general specifications, please refer to the attached Full Data Sheet below ] 2020/11/6 1 / 41 Page Programmable Crystal Oscillator: SG-8018CG/SG-8018CE/SG-8018CB/SG-8018CA Features Crystal oscillator (Programmable) Output frequency: 0.67 MHz to 170 MHz Output: (1 x 10-6 Step) CMOS Supply voltage: 1.62 V to 3.63 V Frequency tolerance, Operating temperature: SG-8018CG (2.5 x 2.0 mm) 50 x 10-6 / -40 C to +105 C * Including frequency aging (+25 C, 10 years) SG-8018CE (3.2 x 2.5 mm) SG-8018CB (5.0 x 3.2 mm) SG-8018CA (7.0 x 5.0 mm) Description Epson's SG-8018 series are Programmable Crystal Oscillator series with CMOS output. While this series offer the same easy programmability of frequencies and other parameters as comparable earlier SG-8002/SG-8003 series, they also have a wider operating temperature range, with a top-end limit of 105 C. In addition to a 2.5 x 2.0 mm package that will enable electronics manufacturers to save board space, the oscillators will also be available in the following popular package sizes: 3.2 x 2.5 mm, 5.0 x 3.2 mm and 7.0 x 5.0 mm. The oscillator in the SG-8101 series have an approximately 66 % tighter frequency tolerance and 50 % lower current consumption than comparable products, and can be used under a wide range of environmental conditions. This will also significantly contribute to performance, lower power requirements, fast development cycles, and low-volume production. Outline Drawing and Terminal Assignment SG-8018CG SG-8018CE SG-8018CB SG-8018CA Terminal Assignment Pin # Connection Function OE terminal OE #1 ST #2 #3 GND OUT #4 VCC OE function "H" * Osc. Circuit Oscillation Output Specified frequency: Enable "L" Oscillation Low (weak pull down): Disable ST terminal ST function Osc. Circuit Output "H" * Oscillation Specified frequency: Enable "L" Oscillation stop Low (weak pull down): Disable GND terminal Output terminal VCC terminal * Please do not use the OE/ST terminal in the open state. Page 2 / 41 Spec No : SG-8018series_E_Ver1.00 [ 1 ] Product Name / Product Number (1-1) Product Name (Standard Form) SG-8018CG: X1G005601xxxx00 SG-8018CE: X1G005591xxxx00 SG-8018CB: X1G005581xxxx00 SG-8018CA: X1G005571xxxx00 (Please contact Epson for details) (1-2) Product Number / Ordering Code SG-8018CA 25.000000MHz T J H P A ModelSizeFrequencySupply voltage (T: 1.8 V to 3.3 V Typ.) Frequency tolerance / Operating temperature (JH: 50 x 10-6 / -40 C to +105 C) FunctionRise time/Fall time Size Function CG 2.5 mm x 2.0 mm P Output enable (#1pin = OE) CE 3.2 mm x 2.5 mm S Standby (#1pin = ST) CB 5.0 mm x 3.2 mm Rise time/Fall time CA 7.0 mm x 5.0 mm A Default B Fast C Slow [ 2 ] Absolute Maximum Ratings Parameter Symbol Maximum supply voltage Input voltage Storage temperature range VCC VIN T_stg Specification Min. -0.3 -0.3 -40 Typ. - Max. 4 VCC + 0.3 +125 Unit V V C Conditions OE/ST terminal [ 3 ] Operating Range Parameter Symbol Specification Supply voltage Supply voltage Input voltage VCC GND VIN Operating temperature range T_use -40 +25 +105 C L_CMOS - - 15 pF CMOS load condition Typ. 0.0 - Max. 3.63 0.0 VCC Unit Min. 1.62 0.0 GND V V V Conditions OE/ST terminal * Power supply startup time (0 %VCC 90 %VCC) should be between 5 s and 500 ms * A 0.1 F or over bypass capacitor should be connected between VCC and GND pins located close to the device [ 4 ] Frequency Characteristics Parameter Output frequency Frequency tolerance *1 Frequency aging Symbol fo f_tol f_age (Unless stated otherwise [ 3 ] Operating Range) Specification Min. Typ. Max. 0.67 170 -50 +50 Included in frequency tolerance Unit Conditions MHz x10-6 x10-6 T_use = -40 C to +105 C +25 C, 10 years *1 Frequency tolerance includes initial frequency tolerance, frequency / temperature characteristics, frequency / voltage coefficient, frequency / load coefficient and frequency aging (+25 C, 10 years) Page 3 / 41 Spec No : SG-8018series_E_Ver1.00 [ 5 ] Electrical Characteristics Parameter Start-up time (Unless stated otherwise [ 3 ] Operating Range) Symbol t_str Current consumption (No load) VCC = 1.62 V to 1.98 V Current consumption (No load) VCC = 1.98 V to 2.20 V ICC Current consumption (No load) VCC = 2.20 V to 2.80 V Current consumption (No load) VCC = 2.70 V to 3.63 V Disable current Stand-by current I_dis I_std Specification Min. - Typ. 2.7 3.1 3.5 3.8 4.1 4.7 2.7 3.1 3.5 3.8 4.1 4.7 2.9 3.4 3.9 4.4 4.8 5.7 3 3.8 4.4 5 5.7 6.8 2.8 2.8 2.8 2.9 0.3 0.4 0.5 1.1 Max. 3 3.2 3.7 4 4.4 4.8 5.5 3.3 3.8 4.2 4.6 5 5.8 3.4 4 4.6 5.1 5.7 6.7 3.5 4.4 5.2 5.9 6.7 8.1 3.2 3.3 3.3 3.5 0.9 1 1.5 2.5 Unit ms Conditions t = 0 at VCC > 1.62 V 0.67 MHz fo 20 MHz 20 MHz < fo 50 MHz mA 50 MHz < fo 75 MHz 75 MHz < fo 100 MHz 100 MHz < fo 125 MHz 125 MHz < fo 170 MHz 0.67 MHz fo 20 MHz 20 MHz < fo 50 MHz mA 50 MHz < fo 75 MHz 75 MHz < fo 100 MHz 100 MHz < fo 125 MHz 125 MHz < fo 170 MHz 0.67 MHz fo 20 MHz 20 MHz < fo 50 MHz mA 50 MHz < fo 75 MHz 75 MHz < fo 100 MHz 100 MHz < fo 125 MHz 125 MHz < fo 170 MHz 0.67 MHz fo 20 MHz 20 MHz < fo 50 MHz mA 50 MHz < fo 75 MHz 75 MHz < fo 100 MHz 100 MHz < fo 125 MHz 125 MHz < fo 170 MHz VCC = 1.62 V to 1.98 V mA VCC = 1.98 V to 2.20 V VCC = 2.20 V to 2.80 V VCC = 2.70 V to 3.63 V VCC = 1.62 V to 1.98 V A VCC = 1.98 V to 2.20 V VCC = 2.20 V to 2.80 V VCC = 2.70 V to 3.63 V IOH Condition tr/tf VOH 90 % VCC - - V A (fo > 40 MHz), B A (fo 40 MHz) C Output voltage (DC characteristics) Symmetry Rise time/Fall time Input voltage Input capacitance Input pull up resistance Output pull down resistance Output disable time (OE) Output disable time (ST) Output enable time (OE) Output enable time (ST) VCC [V] 1.62 to 1.98 1.98 to 2.20 2.20 to 2.80 2.70 to 3.63 -2.5 mA -3.5 mA -4.0 mA -5.0 mA -1.5 mA -2.0 mA -2.5 mA -3.0 mA -1.0 mA -1.5 mA -2.0 mA -2.5 mA IOL Condition tr/tf VOL - - 10 % VCC V SYM 45 70 % VCC 50 2.5 - 55 3 6 3 10 30 % VCC % tr/tf VIH VIL CIN RUP1 RUP2 RDN tstp_oe tstp_st tsta_oe tsta_st 20 5 0.5 - Page 4 / 41 5 150 60 5 1 1 1 3 A (fo > 40 MHz), B A (fo 40 MHz) C VCC [V] 1.62 to 1.98 1.98 to 2.20 2.20 to 2.80 2.70 to 3.63 2.5 mA 3.5 mA 4.0 mA 5.0 mA 1.5 mA 2.0 mA 2.5 mA 3.0 mA 1.0 mA 1.5 mA 2.0 mA 2.5 mA 50 % VCC level, L_CMOS 15 pF A (fo > 40 MHz) ns A (fo 40 MHz) B C (fo 20 MHz) V V pF k M M s s s ms 20 % - 80 % VCC level, L_CMOS = 15 pF OE/ST terminal OE/ST terminal OE/ST = 70 % VCC OE/ST = 30 % VCC OE/ST = GND, OUT = VCC OE terminal HIGH LOW ST terminal HIGH LOW OE terminal LOW HIGH ST terminal LOW HIGH Spec No : SG-8018series_E_Ver1.00 (Unless stated otherwise [ 3 ] Operating Range) Parameter Symbol Phase jitter (Offset frequency: 12 kHz to 20 MHz) VCC = 1.62 V to 1.98 V Phase jitter (Offset frequency: 12 kHz to 20 MHz) tPJ VCC = 2.25 V to 2.75 V Phase jitter (Offset frequency: 12 kHz to 20 MHz) VCC = 2.97 V to 3.63 V Peak to Peak jitter (Clock cycle > 50 000) VCC = 1.62 V to 1.98 V Peak to Peak jitter (Clock cycle > 50 000) tp-p VCC = 2.25 V to 2.75 V Peak to Peak jitter (Clock cycle > 50 000) VCC = 2.97 V to 3.63 V RMS jitter (Clock cycle > 50 000) VCC = 1.62 V to 1.98 V RMS jitter (Clock cycle > 50 000) tRMS VCC = 2.25 V to 2.75 V RMS jitter (Clock cycle > 50 000) VCC = 2.97 V to 3.63 V Cycle to Cycle jitter (Clock cycle > 50 000) VCC = 1.62 V to 1.98 V Cycle to Cycle jitter (Clock cycle > 50 000) VCC = 2.25 V to 2.75 V Cycle to Cycle jitter (Clock cycle > 50 000) VCC = 2.97 V to 3.63 V tc-c Specification Min. - Typ. - Page 5 / 41 Max. 68.2 67.0 76.5 74.1 57.2 67.2 65.3 74.8 73.8 55.4 66.9 72.9 71.3 68.7 55.4 366.0 263.4 111.0 81.9 80.0 346.3 203.3 98.3 55.4 42.8 344.1 199.4 97.2 53.0 33.8 33.2 23.9 10.0 7.4 7.2 31.4 18.4 8.9 5.0 3.8 31.2 18.1 8.8 4.8 3.0 265.2 208.7 75.7 63.3 66.1 253.2 128.2 45.3 35.8 34.0 249.9 122.0 42.8 28.0 25.3 Unit ps ps ps ps ps ps ps ps ps ps ps ps Conditions 10 MHz fo 20 MHz 20 MHz < fo 40 MHz 40 MHz < fo 85 MHz 85 MHz < fo 125 MHz 125 MHz < fo 170 MHz 10 MHz fo 20 MHz 20 MHz < fo 40 MHz 40 MHz < fo 85 MHz 85 MHz < fo 125 MHz 125 MHz < fo 170 MHz 10 MHz fo 20 MHz 20 MHz < fo 40 MHz 40 MHz < fo 85 MHz 85 MHz < fo 125 MHz 125 MHz < fo 170 MHz 10 MHz fo 20 MHz 20 MHz < fo 40 MHz 40 MHz < fo 85 MHz 85 MHz < fo 125 MHz 125 MHz < fo 170 MHz 10 MHz fo 20 MHz 20 MHz < fo 40 MHz 40 MHz < fo 85 MHz 85 MHz < fo 125 MHz 125 MHz < fo 170 MHz 10 MHz fo 20 MHz 20 MHz < fo 40 MHz 40 MHz < fo 85 MHz 85 MHz < fo 125 MHz 125 MHz < fo 170 MHz 10 MHz fo 20 MHz 20 MHz < fo 40 MHz 40 MHz < fo 85 MHz 85 MHz < fo 125 MHz 125 MHz < fo 170 MHz 10 MHz fo 20 MHz 20 MHz < fo 40 MHz 40 MHz < fo 85 MHz 85 MHz < fo 125 MHz 125 MHz < fo 170 MHz 10 MHz fo 20 MHz 20 MHz < fo 40 MHz 40 MHz < fo 85 MHz 85 MHz < fo 125 MHz 125 MHz < fo 170 MHz 10 MHz fo 20 MHz 20 MHz < fo 40 MHz 40 MHz < fo 85 MHz 85 MHz < fo 125 MHz 125 MHz < fo 170 MHz 10 MHz fo 20 MHz 20 MHz < fo 40 MHz 40 MHz < fo 85 MHz 85 MHz < fo 125 MHz 125 MHz < fo 170 MHz 10 MHz fo 20 MHz 20 MHz < fo 40 MHz 40 MHz < fo 85 MHz 85 MHz < fo 125 MHz 125 MHz < fo 170 MHz Spec No : SG-8018series_E_Ver1.00 [ 6 ] Thermal resistance (For reference only) Parameter Symbol Junction temperature Tj jc Junction to case ja Junction to ambient Specification Min. - Typ. 15.2 23.1 16.1 28.0 91.9 103.8 82.5 78.8 Unit Max. +125 - Conditions C SG-8018CG C/W SG-8018CE SG-8018CB SG-8018CA SG-8018CG C/W SG-8018CE SG-8018CB SG-8018CA [ 7 ] Typical Performance Characteristics (For reference only) The following data shows typical performance characteristics (7-1) Frequency / Temperature Characteristics 50 x 10-6 / -40 C to +105 C n = 16 pcs 50 40 Frequency deviation [x10-6] 30 20 10 0 -10 -20 -30 -40 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Temperature [C] Page 6 / 41 Spec No : SG-8018series_E_Ver1.00 (7-2) Current Consumption No load, T_use = +25 C, Freq. Dependency L_CMOS = 15 pF, T_use = +25 C, Freq. Dependency 16.0 9.0 Current consumption (ICC) [mA] Current consumption (ICC) [mA] 10.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 Vcc = 1.8 V Spec at 1.8 V 1.0 Vcc = 2.5 V Spec at 2.5 V Vcc = 3.3 V Spec at 3.3 V 14.0 12.0 10.0 0.0 8.0 6.0 4.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 2.0 0.0 0 20 40 60 80 100 Output re uency 120 140 160 0 20 40 o) MH 60 80 100 120 140 160 Output frequency (fo) [MHz] fo = 19.2 MHz L_CMOS = 5 pF, Temperature Characteristic T_use = +25 C, Output load (L_CMOS) Characteristics 24.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 22.0 Current consumption (ICC) [mA] Current consumption (ICC) [mA] 10.0 90 100 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 10 Temperature [C] 20 30 40 50 Output load (L_CMOS) [pF] * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. fo = 40 MHz L_CMOS = 5 pF, Temperature Characteristic T_use = +25 C, Output load (L_CMOS) Characteristics 24.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 Vcc=1.8 V Vcc=2.5 V Vcc=3.3 V 22.0 Current consumption (ICC) [mA] Current consumption ICC) mA 10.0 90 100 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 C 10 20 30 40 50 Output load L_CMOS) pF * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. fo = 60 MHz L_CMOS = 5 pF, Temperature Characteristic T_use = +25 C, Output load (L_CMOS) Characteristics 24.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 Vcc=1.8 V Vcc=2.5 V Vcc=3.3 V 22.0 Current consumption (ICC) [mA] Current consumption ICC) mA 10.0 90 100 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 C 10 20 30 40 50 Output load L_CMOS) pF * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. Page 7 / 41 Spec No : SG-8018series_E_Ver1.00 (7-2) Current Consumption [cont'd] fo = 80 MHz L_CMOS = 5 pF, Temperature Characteristic T_use = +25 C, Output load (L_CMOS) Characteristics 24.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 Vcc=1.8 V Vcc=2.5 V Vcc=3.3 V 22.0 Current consumption (ICC) [mA] Current consumption ICC) mA 10.0 90 100 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 10 Temperature [C] 20 30 40 50 Output load L_CMOS) pF * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. fo = 122.88 MHz L_CMOS = 5 pF, Temperature Characteristic T_use = +25 C, Output load (L_CMOS) Characteristics 24.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 Vcc=1.8 V Vcc=2.5 V Vcc=3.3 V 22.0 Current consumption (ICC) [mA] Current consumption ICC) mA 10.0 90 100 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 10 Temperature [C] 20 30 40 50 Output load L_CMOS) pF * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. fo = 170 MHz T_use = +25 C, Output load (L_CMOS) Characteristics 10.0 24.0 9.0 22.0 8.0 20.0 Current consumption (ICC) [mA] Current consumption ICC) mA L_CMOS = 5 pF, Temperature Characteristic 7.0 6.0 5.0 4.0 3.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 2.0 1.0 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Vcc=1.8 V Vcc=2.5 V Vcc=3.3 V 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 Temperature [C] 10 20 30 40 50 Output load L_CMOS) pF * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. The actual current consumption is the total of the current under the condition of no load and the current to drive the output load (fo x L_CMOS x VCC). To reduce the current consumption, it is effective to use lower frequency, lower supply voltage and lower output load. Page 8 / 41 Spec No : SG-8018series_E_Ver1.00 (7-3) Rise Time/Fall Time fo = 19.2 MHz, Rise time/Fall time: A (Default) Rise Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 Vcc = 1.8 V 9.0 Vcc = 2.5 V 8.0 7.0 Rise time (tr) [ns] ise time tr) ns 8.0 6.0 5.0 4.0 3.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 Vcc = 3.3 V 7.0 0.0 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 20 C 30 40 50 Output load L_CMOS) pF Fall Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 Vcc = 2.5 V 8.0 7.0 6.0 5.0 4.0 3.0 Vcc = 3.3 V 7.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 0.0 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 20 C 30 40 50 Output load L_CMOS) pF 1 0 . 0 1 0 . 0 9.0 Vc c 9.0 8.0 8.0 7.0 Faltime(f)[ns] Faltime(f)[ns] Vcc = 1.8 V 9.0 Fall time (tf) [ns] Fall time (tf) [ns] 8.0 6.0 5.0 4.0 3.0 Vcc 2.0 1.0 = 1. 8 Vcc = 2. 5 Vcc = 3. 3 V 7.0 = 1. 8 V Vc c = 2. 5 V Vc c = 3. 3 V 6.0 5.0 4.0 3.0 2.0 V 1.0 V 0.0 0.0 -40 -30 -20 -10 0 10 20 30 T e m p e r a t 4 u r 0 e 5 0 6 0 70 80 90 100 0 1 0 2 0 C O u t p u t l o a d 3 0 L _ C M O S ) 4 0 5 0 p F * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. fo = 19.2 MHz, Rise time/Fall time: B (Fast) Rise Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 Vcc = 1.8 V 9.0 Vcc = 2.5 V 8.0 7.0 Rise time (tr) [ns] Rise time (tr) [ns] 8.0 6.0 5.0 4.0 3.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 Vcc = 3.3 V 7.0 0.0 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 20 C 30 40 50 Output load L_CMOS) pF Fall Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 Vcc = 2.5 V 8.0 7.0 6.0 5.0 4.0 3.0 Vcc = 3.3 V 7.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 0.0 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 20 C 30 40 50 Output load L_CMOS) pF 1 0 . 0 1 0 . 0 Vc c Vc c Vc c 9.0 8.0 = = = 1. 8 2. 5 3. 3 V V V Vcc 9.0 8.0 7.0 Faltime(f)[ns] Faltime(f)[ns] Vcc = 1.8 V 9.0 Fall time (tf) [ns] Fall time (tf) [ns] 8.0 6.0 5.0 4.0 3.0 2.0 7.0 = 1. 8 V Vcc = 2. 5 V Vcc = 3. 3 V 6.0 5.0 4.0 3.0 2.0 1.0 1.0 0.0 0.0 -40 -30 -20 -10 0 10 20 30 T e m p e r a t 4 u r 0 e 5 0 6 0 70 80 90 100 0 C 1 0 2 0 O u t p u t l o a d 3 0 L _ C M O S ) 4 0 5 0 p F * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. Page 9 / 41 Spec No : SG-8018series_E_Ver1.00 (7-3) Rise Time/Fall Time [cont'd] fo = 19.2 MHz, Rise time/Fall time: C (Slow) Rise Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 7.0 6.0 5.0 4.0 3.0 Vcc = 1.8 V 9.0 Vcc = 2.5 V 8.0 Rise time (tr) [ns] Rise time (tr) [ns] 8.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 Vcc = 3.3 V 7.0 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 0 10 20 Temperature [C] 30 40 50 Output load (L_CMOS) [pF] Fall Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 7.0 6.0 5.0 4.0 3.0 Vcc = 1.8 V 9.0 Vcc = 2.5 V 8.0 Fall time (tf) [ns] Fall time (tf) [ns] 8.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 Vcc = 3.3 V 7.0 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 0 Temperature [C] 10 20 30 40 50 Output load (L_CMOS) [pF] * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. Page 10 / 41 Spec No : SG-8018series_E_Ver1.00 (7-3) Rise Time/Fall Time [cont'd] fo = 40 MHz, Rise time/Fall time: A (Default) Rise Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 7.0 6.0 5.0 4.0 3.0 Vcc = 1.8 V 9.0 Vcc = 2.5 V 8.0 Rise time (tr) [ns] Rise time (tr) [ns] 8.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 Vcc = 3.3 V 7.0 0.0 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 20 C 30 40 50 Output load L_CMOS) pF Fall Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 7.0 6.0 5.0 4.0 3.0 Vcc = 2.5 V 8.0 Vcc = 3.3 V 7.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 0.0 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 20 C 30 40 50 Output load L_CMOS) pF 1 0 . 0 1 0 . 0 9.0 Vcc 9.0 8.0 8.0 7.0 Faltime(f)[ns] Faltime)ns Vcc = 1.8 V 9.0 Fall time t ) ns Fall time t ) ns 8.0 6.0 5.0 4.0 3.0 Vc c Vcc Vc c 2.0 1.0 = = = 1. 8 2.5 3. 3 V V V 7.0 = 1.8 V Vcc = 2. 5 V Vcc = 3. 3 V 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0.0 -40 -30 -20 -10 0 10 20 30 T e m p e r a t 4 u r 0 e 5 0 6 0 70 80 90 100 0 10 20 C O u t p u t l o a d 30 L _ C M O S ) 40 50 p F * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. fo = 40 MHz, Rise time/Fall time: B (Fast) Rise Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 7.0 6.0 5.0 4.0 3.0 Vcc = 1.8 V 9.0 Vcc = 2.5 V 8.0 ise time tr) ns ise time tr) ns 8.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 Vcc = 3.3 V 7.0 0.0 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 20 C 30 40 50 Output load L_CMOS) pF Fall Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 7.0 6.0 5.0 4.0 3.0 Vcc = 2.5 V 8.0 Vcc = 3.3 V 7.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 0.0 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 20 C 30 40 50 Output load L_CMOS) pF 1 0 . 0 1 0 . 0 Vc c Vc c Vc c 9.0 8.0 = = = 1. 8 2. 5 3. 3 V V V 7.0 6.0 5.0 4.0 3.0 Vc 9.0 8.0 Faltime)ns Faltime)ns Vcc = 1.8 V 9.0 Fall time t ) ns Fall time t ) ns 8.0 2.0 7.0 c = 1 .8 V Vcc = 2. 5 V Vcc = 3. 3 V 6.0 5.0 4.0 3.0 2.0 1.0 1.0 0.0 0.0 - 4 0 - 3 0 - 2 0 - 1 0 0 1 0 2 0 3 0 T e m p e r a t 4 u r 0 e 5 0 6 0 7 0 8 0 9 0 1 0 0 0 C 1 0 2 0 O u t p u t l o a d 3 0 L _ C M O S ) 4 0 5 0 p F * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. Page 11 / 41 Spec No : SG-8018series_E_Ver1.00 (7-3) Rise Time/Fall Time [cont'd] fo = 60 MHz, Rise time/Fall time: A (Default) & B (Fast) Rise Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 Vcc = 1.8 V 9.0 Vcc = 2.5 V 8.0 7.0 Rise time (tr) [ns] ise time tr) ns 8.0 6.0 5.0 4.0 3.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 Vcc = 3.3 V 7.0 0.0 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 20 30 40 50 Output load L_CMOS) pF C Fall Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 7.0 6.0 5.0 4.0 3.0 Vcc = 2.5 V 8.0 Vcc = 3.3 V 7.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 0.0 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 20 30 40 50 Output load L_CMOS) pF C 1 0 . 0 1 0 . 0 Vc c 9.0 Vcc 8.0 Vc c = = = 1. 8 2.5 3. 3 V 8.0 V 6.0 5.0 4.0 3.0 Vcc 9.0 V 7.0 Faltime)ns Faltime)ns Vcc = 1.8 V 9.0 Fall time t ) ns Fall time t ) ns 8.0 2.0 7.0 = 1.8 V Vc c = 2. 5 V Vc c = 3. 3 V 6.0 5.0 4.0 3.0 2.0 1.0 1.0 0.0 0.0 -40 -30 -20 -10 0 10 20 30 T e m p e r a t 4 u r 0 e 5 0 6 0 70 80 90 100 0 10 20 C O u t p u t l o a d 30 L _ C M O S ) 40 50 p F * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. fo = 80 MHz, Rise time/Fall time: A (Default) & B (Fast) Rise Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 7.0 6.0 5.0 4.0 3.0 Vcc = 1.8 V 9.0 Vcc = 2.5 V 8.0 Rise time (tr) [ns] ise time tr) ns 8.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 Vcc = 3.3 V 7.0 0.0 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 20 C 30 40 50 Output load L_CMOS) pF Fall Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 7.0 6.0 5.0 4.0 3.0 Vcc = 2.5 V 8.0 Vcc = 3.3 V 7.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 0.0 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 20 C 30 40 50 Output load L_CMOS) pF 1 0 . 0 1 0 . 0 Vc c Vc c Vc c 9.0 8.0 = = = 1. 8 2. 5 3. 3 V V V 7.0 6.0 5.0 4.0 3.0 Vcc 9.0 8.0 Faltime(f)[ns] Faltime(f)[ns] Vcc = 1.8 V 9.0 Fall time (tf) [ns] Fall time (tf) [ns] 8.0 2.0 7.0 = 1.8 V Vc c = 2. 5 V Vc c = 3. 3 V 6.0 5.0 4.0 3.0 2.0 1.0 1.0 0.0 0.0 -40 -30 -20 -10 0 10 20 30 T e m p e r a t 4 u r 0 e 5 0 6 0 70 80 90 100 0 C 10 20 O u t p u t l o a d 30 L _ C M O S ) 40 50 p F * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. Page 12 / 41 Spec No : SG-8018series_E_Ver1.00 (7-3) Rise Time / Fall Time [cont'd] fo = 122.88 MHz, Rise time/Fall time: A (Default) & B (Fast) Rise Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 7.0 6.0 5.0 4.0 3.0 Vcc = 1.8 V 9.0 Vcc = 2.5 V 8.0 ise time tr) ns ise time tr) ns 8.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 Vcc = 3.3 V 7.0 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 Output load L_CMOS) pF Temperature [C] Fall Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 7.0 6.0 5.0 4.0 3.0 Vcc = 2.5 V 8.0 Vcc = 3.3 V 7.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 0.0 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 20 C 30 40 50 Output load L_CMOS) pF 1 0 . 0 1 0 . 0 Vc c Vc c Vc c 9.0 8.0 = = = 1. 8 2. 5 3. 3 V V V 7.0 6.0 5.0 4.0 3.0 Vcc 9.0 8.0 Faltime)ns Faltime)ns Vcc = 1.8 V 9.0 Fall time t ) ns Fall time t ) ns 8.0 2.0 7.0 = 1.8 V Vc c = 2. 5 V Vc c = 3. 3 V 6.0 5.0 4.0 3.0 2.0 1.0 1.0 0.0 0.0 -40 -30 -20 -10 0 10 20 30 T e m p e r a t 4 u r 0 e 5 0 6 0 70 80 90 100 0 C 10 20 O u t p u t l o a d 30 L _ C M O S ) 40 50 p F * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. Page 13 / 41 Spec No : SG-8018series_E_Ver1.00 fo = 170 MHz, Rise time/Fall time: A (Default) & B (Fast) Rise Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 7.0 6.0 5.0 4.0 3.0 Vcc = 2.5 V 8.0 ise time tr) ns ise time tr) ns 8.0 Vcc = 1.8 V 9.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 Vcc = 3.3 V 7.0 0.0 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 20 C 30 40 50 Output load L_CMOS) pF Fall Time 20 % - 80 %VCC, L_CMOS = 15 pF, Temp. Char. 20 % - 80 %VCC, T_use = +25 C, Output load Char. 10.0 10.0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 9.0 7.0 6.0 5.0 4.0 3.0 Vcc = 3.3 V 7.0 6.0 5.0 4.0 3.0 2.0 2.0 1.0 1.0 0.0 0.0 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 20 C 30 40 50 Output load L_CMOS) pF 1 0 . 0 1 0 . 0 Vc c Vc c Vc c 9.0 8.0 = = = 1. 8 2. 5 3. 3 V V V 7.0 6.0 5.0 4.0 3.0 Vcc 9.0 8.0 Faltime)ns Faltime)ns Vcc = 2.5 V 8.0 Fall time t ) ns Fall time t ) ns 8.0 Vcc = 1.8 V 9.0 2.0 7.0 = 1.8 V Vc c = 2. 5 V Vc c = 3. 3 V 6.0 5.0 4.0 3.0 2.0 1.0 1.0 0.0 0.0 -40 -30 -20 -10 0 10 20 30 T e m p e r a t 4 u r 0 e 5 0 6 0 70 80 90 100 0 C 10 20 O u t p u t l o a d 30 L _ C M O S ) 40 50 p F * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. Page 14 / 41 Spec No : SG-8018series_E_Ver1.00 (7-4) Symmetry fo = 19.2 MHz, Rise time/Fall time: A (Default) 50 %VCC, L_CMOS = 15 pF, Temp. Char. 50 %VCC, T_use = +25 C, Output load Char. 55 55 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 52 53 Symmetry S M) % Symmetry S M) % 53 51 50 49 48 47 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 46 52 51 50 49 48 47 46 45 45 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 C 20 30 40 50 Output load L_CMOS) pF * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. fo = 19.2 MHz, Rise time/Fall time: B (Fast) 50 %VCC, L_CMOS = 15 pF, Temp. Char. 50 %VCC, T_use = +25 C, Output load Char. 55 55 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 52 51 50 49 48 47 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 53 Symmetry (SYM) [%] Symmetry (SYM) [%] 53 46 52 51 50 49 48 47 46 45 45 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 C 20 30 40 50 Output load L_CMOS) pF * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. fo = 19.2 MHz, Rise time/Fall time: C (Slow) 50 %VCC, L_CMOS = 15 pF, Temp. Char. 50 %VCC, T_use = +25 C, Output load Char. 55 55 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 52 51 50 49 48 47 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 53 Symmetry (SYM) [%] Symmetry (SYM) [%] 53 46 52 51 50 49 48 47 46 45 45 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 C 10 20 30 40 50 Output load L_CMOS) pF * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. Page 15 / 41 Spec No : SG-8018series_E_Ver1.00 (7-4) Symmetry [cont'd] fo = 40 MHz, Rise time/Fall time: A (Default) 50 %VCC, L_CMOS = 15 pF, Temp. Char. 50 %VCC, T_use = +25 C, Output load Char. 55 55 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 52 53 Symmetry S M) % Symmetry S M) % 53 51 50 49 48 47 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 46 52 51 50 49 48 47 46 45 45 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 C 20 30 40 50 Output load L_CMOS) pF * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. fo = 40 MHz, Rise time/Fall time: B (Fast) 50 %VCC, L_CMOS = 15 pF, Temp. Char. 50 %VCC, T_use = +25 C, Output load Char. 55 55 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 52 51 50 49 48 47 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 53 Symmetry S M) % Symmetry S M) % 53 46 52 51 50 49 48 47 46 45 45 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 C 20 30 40 50 Output load L_CMOS) pF * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. fo = 60 MHz, Rise time/Fall time: A (Default) & B (Fast) 50 %VCC, L_CMOS = 15 pF, Temp. Char. 50 %VCC, T_use = +25 C, Output load Char. 55 55 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 52 51 50 49 48 47 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 53 Symmetry S M) % Symmetry S M) % 53 46 52 51 50 49 48 47 46 45 45 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 C 20 30 40 50 Output load L_CMOS) pF * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. fo = 80 MHz, Rise time/Fall time: A (Default) & B (Fast) 50 %VCC, L_CMOS = 15 pF, Temp. Char. 50 %VCC, T_use = +25 C, Output load Char. 55 55 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 52 53 Symmetry S M) % Symmetry S M) % 53 51 50 49 48 47 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 46 52 51 50 49 48 47 46 45 45 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 C 10 20 30 40 50 Output load L_CMOS) pF * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. Page 16 / 41 Spec No : SG-8018series_E_Ver1.00 (7-4) Symmetry [cont'd] fo = 122.88 MHz, Rise time/Fall time: A (Default) & B (Fast) 50 %VCC, L_CMOS = 15 pF, Temp. Char. 50 %VCC, T_use = +25 C, Output load Char. 55 55 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 52 53 Symmetry S M) % Symmetry S M) % 53 51 50 49 48 47 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 46 52 51 50 49 48 47 46 45 45 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 C 20 30 40 50 Output load L_CMOS) pF * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. fo = 170 MHz, Rise time/Fall time: A (Default) & B (Fast) 50 %VCC, L_CMOS = 15 pF, Temp. Char. 50 %VCC, T_use = +25 C, Output load Char. 55 55 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 52 51 50 49 48 47 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 54 53 Symmetry S M) % Symmetry S M) % 53 46 52 51 50 49 48 47 46 45 45 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 C 10 20 30 40 50 Output load L_CMOS) pF * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. Page 17 / 41 Spec No : SG-8018series_E_Ver1.00 (7-5) Output Voltage fo = 19.2 MHz, Rise time/Fall time: A (Default) VOH, L_CMOS = 15 pF, Temp. Char. VOH, T_use = +25 C, Output load Char. 3.5 3.5 3 2.5 2 1.5 1 0.5 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 0 Output voltage VOH) V Output voltage VOH) V 3 -0.5 2.5 2 1.5 1 0.5 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 0 10 Temperature [C] VOL, L_CMOS = 15 pF, Temp. Char. 30 40 50 VOL, T_use = +25 C, Output load Char. 3.5 3.5 2.5 2 1.5 1 0.5 0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 3 Output voltage VOL) V Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 3 Output voltage VOL) V 20 Output load (L_CMOS) [pF] -0.5 2.5 2 1.5 1 0.5 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 0 10 Temperature [C] 20 30 40 50 Output load (L_CMOS) [pF] * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. fo = 19.2 MHz, Rise time/Fall time: B (Fast) VOH, L_CMOS = 15 pF, Temp. Char. VOH, T_use = +25 C, Output load Char. 3.5 3.5 3 2.5 2 1.5 1 0.5 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 0 Output voltage VOH) V Output voltage VOH) V 3 -0.5 2 1.5 1 0.5 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 C 20 30 40 50 Output load L_CMOS) pF VOL, L_CMOS = 15 pF, Temp. Char. VOL, T_use = +25 C, Output load Char. 3.5 3.5 2.5 2 1.5 1 0.5 0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 3 Output voltage VOL) V Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 3 Output voltage VOL) V 2.5 -0.5 2.5 2 1.5 1 0.5 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 C 10 20 30 40 50 Output load L_CMOS) pF * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. Page 18 / 41 Spec No : SG-8018series_E_Ver1.00 (7-5) Output Voltage [cont'd] fo = 19.2 MHz, Rise time/Fall time: C (Slow) VOH, L_CMOS = 15 pF, Temp. Char. VOH, T_use = +25 C, Output load Char. 3.5 3.5 3 2.5 2 1.5 1 0.5 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 0 Output voltage VOH) V Output voltage VOH) V 3 -0.5 2 1.5 1 0.5 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 C 20 30 40 50 Output load L_CMOS) pF VOL, L_CMOS = 15 pF, Temp. Char. VOL, T_use = +25 C, Output load Char. 3.5 3.5 2.5 2 1.5 1 0.5 0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 3 Output voltage VOL) V Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 3 Output voltage VOL) V 2.5 -0.5 2.5 2 1.5 1 0.5 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 C 20 30 40 50 Output load L_CMOS) pF * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. fo = 40 MHz, Rise time/Fall time: A (Default) VOH, L_CMOS = 15 pF, Temp. Char. VOH, T_use = +25 C, Output load Char. 3.5 3.5 3 2.5 2 1.5 1 0.5 Vcc=1.8 V Vcc=2.5 V Vcc=3.3 V 0 Output voltage VOH) V Output voltage VOH) V 3 -0.5 2.5 2 1.5 1 0.5 Vcc=1.8 V Vcc=2.5 V Vcc=3.3 V 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 0 10 Temperature [C] VOL, L_CMOS = 15 pF, Temp. Char. 30 40 50 VOL, T_use = +25 C, Output load Char. 3.5 3.5 2.5 2 1.5 1 0.5 0 Vcc=1.8 V Vcc=2.5 V Vcc=3.3 V 3 Output voltage VOL) V Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 3 Output voltage VOL) V 20 Output load (L_CMOS) [pF] -0.5 2.5 2 1.5 1 0.5 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 0 Temperature [C] 10 20 30 40 50 Output load (L_CMOS) [pF] * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. Page 19 / 41 Spec No : SG-8018series_E_Ver1.00 (7-5) Output Voltage [cont'd] fo = 40 MHz, Rise time/Fall time: B (Fast) VOH, L_CMOS = 15 pF, Temp. Char. VOH, T_use = +25 C, Output load Char. 3.5 3.5 3 2.5 2 1.5 1 0.5 Vcc=1.8 V Vcc=2.5 V Vcc=3.3 V 0 Output voltage VOH) V Output voltage VOH) V 3 -0.5 2 1.5 1 0.5 Vcc=1.8 V Vcc=2.5 V Vcc=3.3 V 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 C 20 30 40 50 Output load L_CMOS) pF VOL, L_CMOS = 15 pF, Temp. Char. VOL, T_use = +25 C, Output load Char. 3.5 3.5 2.5 2 1.5 1 0.5 0 Vcc=1.8 V Vcc=2.5 V Vcc=3.3 V 3 Output voltage VOL) V Vcc=1.8 V Vcc=2.5 V Vcc=3.3 V 3 Output voltage VOL) V 2.5 -0.5 2.5 2 1.5 1 0.5 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 Temperature 50 60 70 80 90 100 0 10 C 20 30 40 50 Output load L_CMOS) pF * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. fo = 60 MHz, Rise time/Fall time: A (Default) & B (Fast) VOH, L_CMOS = 15 pF, Temp. Char. VOH, T_use = +25 C, Output load Char. 3.5 3.5 3 2.5 2 1.5 1 0.5 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 0 Output voltage VOH) V Output voltage VOH) V 3 -0.5 2.5 2 1.5 1 0.5 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 0 10 Temperature [C] VOL, L_CMOS = 15 pF, Temp. Char. 30 40 50 VOL, T_use = +25 C, Output load Char. 3.5 3.5 2.5 2 1.5 1 0.5 0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 3 Output voltage VOL) V Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 3 Output voltage VOL) V 20 Output load (L_CMOS) [pF] -0.5 2.5 2 1.5 1 0.5 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 0 Temperature [C] 10 20 30 40 50 Output load (L_CMOS) [pF] * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. Page 20 / 41 Spec No : SG-8018series_E_Ver1.00 (7-5) Output Voltage [cont'd] fo = 80 MHz, Rise time/Fall time: A (Default) & B (Fast) VOH, L_CMOS = 15 pF, Temp. Char. VOH, T_use = +25 C, Output load Char. 3.5 3.5 3 2.5 2 1.5 1 0.5 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 0 Output voltage VOH) V Output voltage VOH) V 3 -0.5 2.5 2 1.5 1 0.5 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 0 10 Temperature [C] VOL, L_CMOS = 15 pF, Temp. Char. 30 40 50 VOL, T_use = +25 C, Output load Char. 3.5 3.5 2.5 2 1.5 1 0.5 0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 3 Output voltage VOL) V Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 3 Output voltage VOL) V 20 Output load (L_CMOS) [pF] -0.5 2.5 2 1.5 1 0.5 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 0 10 Temperature [C] 20 30 40 50 Output load (L_CMOS) [pF] * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. fo = 122.88 MHz, Rise time/Fall time: A (Default) & B (Fast) VOH, L_CMOS = 15 pF, Temp. Char. VOH, T_use = +25 C, Output load Char. 3.5 3.5 3 2.5 2 1.5 1 0.5 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 0 Output voltage VOH) V Output voltage VOH) V 3 -0.5 2.5 2 1.5 1 0.5 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 0 10 Temperature [C] VOL, L_CMOS = 15 pF, Temp. Char. 30 40 50 VOL, T_use = +25 C, Output load Char. 3.5 3.5 2.5 2 1.5 1 0.5 0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 3 Output voltage VOL) V Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 3 Output voltage VOL) V 20 Output load (L_CMOS) [pF] -0.5 2.5 2 1.5 1 0.5 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 0 Temperature [C] 10 20 30 40 50 Output load (L_CMOS) [pF] * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. Page 21 / 41 Spec No : SG-8018series_E_Ver1.00 (7-5) Output Voltage [cont'd] fo = 170 MHz, Rise time/Fall time: A (Default) & B (Fast) VOH, L_CMOS = 15 pF, Temp. Char. VOH, T_use = +25 C, Output load Char. 3.5 3.5 3 2.5 2 1.5 1 0.5 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 0 Output voltage VOH) V Output voltage VOH) V 3 -0.5 2.5 2 1.5 1 0.5 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 0 10 Temperature [C] VOL, L_CMOS = 15 pF, Temp. Char. 30 40 50 VOL, T_use = +25 C, Output load Char. 3.5 3.5 2.5 2 1.5 1 0.5 0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 3 Output voltage VOL) V Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 3 Output voltage VOL) V 20 Output load (L_CMOS) [pF] -0.5 2.5 2 1.5 1 0.5 0 -0.5 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 0 10 Temperature [C] 20 30 40 50 Output load (L_CMOS) [pF] * Output load condition under L_CMOS > 15 pF (dotted line area) is not guaranteed, and the data is for reference. (7-6) Phase Jitter T_use = +25 C 80 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V Phase itter t P ) ps 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 Output frequency (fo) [MHz] * Offset frequency fo < 10 MHz: 10 MHz fo < 39 MHz: fo 39 MHz: 12 kHz to 1 MHz 12 kHz to 5 MHz 12 kHz to 20 MHz Page 22 / 41 Spec No : SG-8018series_E_Ver1.00 (7-7) Jitter Peak to Peak Jitter, T_use = +25 C 200 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V itter tp-p) ps 180 160 140 120 100 Pea to Pea 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 Output frequency (fo) [MHz] RMS Jitter, T_use = +25 C MS itter t MS) ps 25 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 20 15 10 5 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 Output frequency (fo) [MHz] Cycle to Cycle itter tc-c) ps Cycle to Cycle Jitter, T_use = +25 C 130 120 110 100 90 80 70 60 50 40 30 20 10 0 Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 Output re uency o) MH Page 23 / 41 Spec No : SG-8018series_E_Ver1.00 (7-8) Output waveform fo = 19.2 MHz, Rise time/Fall time: A (Default) VCC = 2.5 V, L_CMOS = 15 pF, T_use = +25 C 3.5 3.5 3 3 2.5 2.5 Output voltage [V] Output voltage [V] VCC = 3.3 V, L_CMOS = 15 pF, T_use = +25 C 2 1.5 1 0.5 2 1.5 1 0.5 0 0 Time [10 ns / div] Time [10 ns / div] VCC = 1.8 V, L_CMOS = 15 pF, T_use = +25 C 3.5 Output voltage [V] 3 2.5 2 1.5 1 0.5 0 Time [10 ns / div] fo = 19.2 MHz, Rise time/Fall time: B (Fast) VCC = 2.5 V, L_CMOS = 15 pF, T_use = +25 C 3.5 3.5 3 3 2.5 2.5 Output voltage [V] Output voltage [V] VCC = 3.3 V, L_CMOS = 15 pF, T_use = +25 C 2 1.5 1 0.5 2 1.5 1 0.5 0 0 Time [10 ns / div] Time [10 ns / div] VCC = 1.8 V, L_CMOS = 15 pF, T_use = +25 C 3.5 Output voltage [V] 3 2.5 2 1.5 1 0.5 0 Time [10 ns / div] Page 24 / 41 Spec No : SG-8018series_E_Ver1.00 (7-8) Output Waveform [cont'd] fo = 19.2 MHz, Rise time/Fall time: C (Slow) VCC = 2.5 V, L_CMOS = 15 pF, T_use = +25 C 3.5 3.5 3 3 2.5 2.5 Output voltage V Output voltage V VCC = 3.3 V, L_CMOS = 15 pF, T_use = +25 C 2 1.5 1 0.5 2 1.5 1 0.5 0 0 Time 10 ns div Time 10 ns div VCC = 1.8 V, L_CMOS = 15 pF, T_use = +25 C 3.5 Output voltage V 3 2.5 2 1.5 1 0.5 0 Time 10 ns div fo = 40 MHz, Rise time/Fall time: A (Default) VCC = 2.5 V, L_CMOS = 15 pF, T_use = +25 C 3.5 3.5 3 3 2.5 2.5 Output voltage V Output voltage V VCC = 3.3 V, L_CMOS = 15 pF, T_use = +25 C 2 1.5 1 0.5 2 1.5 1 0.5 0 0 Time 5 ns div Time 5 ns div VCC = 1.8 V, L_CMOS = 15 pF, T_use = +25 C 3.5 Output voltage V 3 2.5 2 1.5 1 0.5 0 Time 5 ns div Page 25 / 41 Spec No : SG-8018series_E_Ver1.00 (7-8) Output Waveform [cont'd] fo = 40 MHz, Rise time/Fall time: B (Fast) VCC = 2.5 V, L_CMOS = 15 pF, T_use = +25 C 3.5 3.5 3 3 2.5 2.5 Output voltage V Output voltage V VCC = 3.3 V, L_CMOS = 15 pF, T_use = +25 C 2 1.5 1 0.5 2 1.5 1 0.5 0 0 Time 5 ns div Time 5 ns div VCC = 1.8 V, L_CMOS = 15 pF, T_use = +25 C 3.5 Output voltage V 3 2.5 2 1.5 1 0.5 0 Time 5 ns div fo = 60 MHz, Rise time/Fall time: A (Default) & B (Fast) VCC = 2.5 V, L_CMOS = 15 pF, T_use = +25 C 3.5 3.5 3 3 2.5 2.5 Output voltage V Output voltage V VCC = 3.3 V, L_CMOS = 15 pF, T_use = +25 C 2 1.5 1 0.5 2 1.5 1 0.5 0 0 Time 5 ns div Time 5 ns div VCC = 1.8 V, L_CMOS = 15 pF, T_use = +25 C 3.5 Output voltage V 3 2.5 2 1.5 1 0.5 0 Time 5 ns div Page 26 / 41 Spec No : SG-8018series_E_Ver1.00 (7-8) Output Waveform [cont'd] fo = 80 MHz, Rise time/Fall time: A (Default) & B (Fast) VCC = 2.5 V, L_CMOS = 15 pF, T_use = +25 C 3.5 3.5 3 3 2.5 2.5 Output voltage V Output voltage V VCC = 3.3 V, L_CMOS = 15 pF, T_use = +25 C 2 1.5 1 0.5 2 1.5 1 0.5 0 0 Time 5 ns div Time 5 ns div VCC = 1.8 V, L_CMOS = 15 pF, T_use = +25 C 3.5 Output voltage V 3 2.5 2 1.5 1 0.5 0 Time 5 ns div fo = 122.88 MHz, Rise time/Fall time: A (Default) & B (Fast) VCC = 2.5 V, L_CMOS = 15 pF, T_use = +25 C 3.5 3.5 3 3 2.5 2.5 Output voltage V Output voltage V VCC = 3.3 V, L_CMOS = 15 pF, T_use = +25 C 2 1.5 1 0.5 2 1.5 1 0.5 0 0 Time .5 ns div Time .5 ns div VCC = 1.8 V, L_CMOS = 15 pF, T_use = +25 C 3.5 Output voltage V 3 2.5 2 1.5 1 0.5 0 Time .5 ns div Page 27 / 41 Spec No : SG-8018series_E_Ver1.00 (7-8) Output Waveform [cont'd] fo = 170 MHz, Rise time/Fall time: A (Default) & B (Fast) VCC = 2.5 V, L_CMOS = 15 pF, T_use = +25 C 3.5 3.5 3 3 2.5 2.5 Output voltage V Output voltage V VCC = 3.3 V, L_CMOS = 15 pF, T_use = +25 C 2 1.5 1 0.5 2 1.5 1 0.5 0 0 Time .5 ns div Time .5 ns div VCC = 1.8 V, L_CMOS = 15 pF, T_use = +25 C 3.5 Output voltage V 3 2.5 2 1.5 1 0.5 0 Time .5 ns div Page 28 / 41 Spec No : SG-8018series_E_Ver1.00 [ 8 ] Test Circuit (8-1) Waveform Observation (8-2) Current Consumption Test * Disable current test should be OE = GND. Stand-by current test should be ST = GND. (8-3) Phase Jitter Signal Source Analyzer *1 *1 Signal Source Analyzer Keysight: E5052B Minimum frequency: 10 MHz (8-4) Jitter (Peak to Peak, RMS, Cycle to Cycle) Digital Oscilloscope *2 *2 Digital Oscilloscope Keysight: DSA series Maximum analog bandwidth to 1 GHz Sampling rate over 40 GHz/s Jitter measurement software tool: EZJIT+ Measurement clock cycle > 50 000 (8-5) Condition (1) Oscilloscope The bandwidth should be minimum 5 times wider than measurement frequency The probe ground should be placed closely to the test point and the lead length should be as short as possible * It is recommended to use miniature soc et. Don't use earth lead.) (2) L_CMOS includes probe capacitance. 3) A 0.1 F bypass capacitor should be connected between VCC and GND pins located close to the device (4) Use a current meter with a low internal impedance (5) Power Supply Power supply startup time (0 %VCC 90 %VCC) should be between 5 s and 500 ms Power supply impedance should be as low as possible and GND line should be as short as possible Page 29 / 41 Spec No : SG-8018series_E_Ver1.00 (8-6) Timing Chart (1) Output Waveform and Level (2) ST Function and Timing OE/ST terminal Osc. circuit Output status "H" Oscillation OE: Oscillation Specified frequency: Enable "L" *3 ST: Oscillation stop Low (Weak pull down ): Disable Enable VIH OE/ST VIL tstp_oe /tstp_st *1 Disable tsta_oe /tsta_st *2 OUT Weak pull down *3 *1 The period from OE/ST = VIL to OUT = Low (weak pull down) (Disable) *2 The period from OE/ST = VIH to OUT = Enable *3 Pulled down with Output pull down resistance (R DN) * Judging the start of output when output waveform is observed. * OE/ST terminal voltage level should not exceed supply voltage when using OE/ST function. Please note that OE/ST rise time should not exceed supply voltage rise time at the start-up. * Please do not use the OE/ST terminal in the open state. Typically the output will be enable when OE/ST is open state, but the input pull resistance is large and OE/ST terminal may drop to "L" level and be disable due to noise or leakage current. Page 30 / 41 Spec No : SG-8018series_E_Ver1.00 [ 9 ] Outline Drawing and Recommended Footprint (9-1) SG-8018CG Units: mm Terminal coating : Au plating For stable operation, it is recommended that 0.1 F bypass capacitor should be connected between V CC and GND and placed as close to the VCC pin as possible. Reference Weight Typ.: 13 mg Terminal Assignment Pin # Connection Function OE terminal OE #1 ST #2 #3 GND OUT OE function "H" * Osc. Circuit Oscillation Output Specified frequency: Enable "L" Oscillation Low (weak pull down): Disable ST terminal ST function Osc. Circuit Output "H" * Oscillation Specified frequency: Enable "L" Oscillation stop Low (weak pull down): Disable GND terminal Output terminal #4 VCC terminal VCC * Please do not use the OE/ST terminal in the open state. Marking Model Output frequency 1 7 0 . A 2 A 2 3 DM Location of Pin1pin #1 Production lot number Page 31 / 41 Spec No : SG-8018series_E_Ver1.00 (9-2) SG-8018CE Units: mm Terminal coating : Au plating For stable operation, it is recommended that 0.1 F bypass capacitor should be connected between V CC and GND and placed as close to the VCC pin as possible. Reference Weight Typ.: 25 mg Terminal Assignment Pin # Connection Function OE terminal OE #1 ST #2 #3 GND OUT OE function "H" * Osc. Circuit Oscillation Output Specified frequency: Enable "L" Oscillation Low (weak pull down): Disable ST terminal ST function Osc. Circuit Output "H" * Oscillation Specified frequency: Enable "L" Oscillation stop Low (weak pull down): Disable GND terminal Output terminal #4 VCC terminal VCC * Please do not use the OE/ST terminal in the open state. Marking Output frequency 170 . 0A2 Model A 6 4 AM Location of Pin #1 1pin Production lot Page 32 / 41 number Spec No : SG-8018series_E_Ver1.00 (9-4) SG-8018CB Units: mm Terminal coating : Au plating For stable operation, it is recommended that 0.1 F bypass capacitor should be connected between V CC and GND and placed as close to the VCC pin as possible. Reference Weight Typ.: 51 mg Terminal Assignment Pin # Connection Function OE terminal OE #1 ST #2 #3 GND OUT OE function "H" * Osc. Circuit Oscillation Output Specified frequency: Enable "L" Oscillation Low (weak pull down): Disable ST terminal ST function Osc. Circuit Output "H" * Oscillation Specified frequency: Enable "L" Oscillation stop Low (weak pull down): Disable GND terminal Output terminal #4 VCC terminal VCC * Please do not use the OE/ST terminal in the open state. Marking Output frequency 1 7 0 . 0 A 2 Model A 6 4 AM Location of Pin #1 1pin Production lot Page 33 / 41 number Spec No : SG-8018series_E_Ver1.00 (9-5) SG-8018CA Units: mm Terminal coating : Au plating For stable operation, it is recommended that 0.1 F bypass capacitor should be connected between V CC and GND and placed as close to the VCC pin as possible. Reference Weight Typ.: 143 mg Terminal Assignment Pin # Connection Function OE terminal OE #1 Osc. Circuit Oscillation Output Specified frequency: Enable "L" Oscillation Low (weak pull down): Disable ST terminal ST function ST #2 #3 OE function "H" * GND OUT Osc. Circuit Output "H" * Oscillation Specified frequency: Enable "L" Oscillation stop Low (weak pull down): Disable GND terminal Output terminal #4 VCC terminal VCC * Please do not use the OE/ST terminal in the open state. Marking Output frequency 1 7 0 . 0 0 A 2 Model A 6 4 AM Location of 1pin Pin #1 Production lot number Page 34 / 41 Spec No : SG-8018series_E_Ver1.00 [ 10 ] Moisture Sensitivity Level and Electro-Static Discharge Ratings (10-1) Moisture Sensitivity Level (MSL) Specification Conditions Parameter LEVEL 1 IPC/JEDEC J-STD-020D.1 MSL (10-2) Electro-Static Discharge (ESD) Specification Parameter HBM 2 000 V Min. MM 250 V Min. CDM 750 V Min (10-3) Latch-Up Parameter Latch-up Conditions JEITA ED-4701/302 (JEDEC JESD22-A114) EIA ED-4701-1 C111A, 100 pF, 1.5 , 3 times JEDEC JESD22-A115 (EIAJ ED-4701-1 C111) EIA ED-4701-1 C111, 00 pF, 0 , 1 time JEITA ED-4701/302 (JEDEC JESD22-C101), (D-CDM) Conditions AEC Q100 E4, AEC Q100-004 VCC = 3.6 V, 1 time, +105 C Condition 1: Positive pulse current (VCC relative), +200 mA Condition 2: Negative pulse current (GND relative), -200 mA Criteria 5 x 10-6 [ 11 ] Reflow Profiles IPC/JEDEC J-STD-020D.1 Page 35 / 41 Spec No : SG-8018series_E_Ver1.00 [ 12 ] Packing Information (12-1) SG-8018CG (1) Packing Quantity The last two digits of the Product Number (X1G005601xxxxxx) are a code that defines the packing quantity. The standard is "00" for a 3 000 pcs/Reel. 4.00.1 Epson Epson +0.1 1.0 -0 Units: mm 1.150.1 0.250.05 2.80.1 2.00.1 8.00.2 +0.1 1.5 -0 3.50.1 10P: 40.00.1 1.750.1 (2) Taping Specification Subject to EIA-481, IEC-60286 and JIS C0806 1) Tape Dimensions Carrier Tape Material: PS (Polystyrene) Top Tape Material: PET (Polyethylene Terephthalate) + PE (Polyethylene) User direction of feed Top tape 4.00.1 2.30.1 2) Reel Dimensions Reel Material: PS (Polystyrene) Units: mm 11.41.0 180+0-3.0 60+1-0 90.3 10 20.5 130.2 6-R0.5 10.8 3) Storage Environment We recommend to keep less than +30 C and 85 %RH of humidity in a packed condition, and to use it less than 6 months after delivery. Page 36 / 41 Spec No : SG-8018series_E_Ver1.00 (12-2) SG-8018CE (1) Packing Quantity The last two digits of the Product Number (X1G005591xxxxxx) are a code that defines the packing quantity. The standard is "00" for a 2 000 pcs/Reel. 1.750.1 (2) Taping Specification Subject to EIA-481, IEC-60286 and JIS C0806 1) Tape Dimensions Carrier Tape Material: PS (Polystyrene) Top Tape Material: PET (Polyethylene Terephthalate) + PE (Polyethylene) 10P: 40.00.1 3.50.1 Epson Epson 8.00.2 1.00.1 1.40.1 0.250.05 4.00.1 3.50.05 +0.1 1.5 -0 2.00.1 Units: mm User direction of feed Top tape 4.00.1 2.80.1 2) Reel Dimensions Reel Material: PS (Polystyrene) Units: mm 11.41.0 180+0-3.0 60+1-0 90.3 10 20.5 130.2 6-R0.5 10.8 3) Storage Environment We recommend to keep less than +30 C and 85 %RH of humidity in a packed condition, and to use it less than 6 months after delivery. Page 37 / 41 Spec No : SG-8018series_E_Ver1.00 (12-3) SG-8018CB (1) Packing Quantity The last two digits of the Product Number (X1G005581xxxxxx) are a code that defines the packing quantity. The standard is "00" for a 1 000 pcs/Reel. (2) Taping Specification Subject to EIA-481 & IEC-60286 1) Tape Dimensions Carrier Tape Material: PS (Polystyrene) Top Tape Material: PET (Polyethylene Terephthalate) Units: mm Epson Epson User direction of feed 2) Reel Dimensions Reel Material: PS (Polystyrene) Units: mm 3) Storage Environment We recommend to keep less than +30 C and 85 %RH of humidity in a packed condition, and to use it less than 6 months after delivery. Page 38 / 41 Spec No : SG-8018series_E_Ver1.00 (12-4) SG-8018CA (1) Packing Quantity The last two digits of the Product Number (X1G005571xxxxxx) are a code that defines the packing quantity. The standard is "00" for a 1 000 pcs/Reel. (2) Taping Specification Subject to EIA-481 & IEC-60286 1) Tape Dimensions Carrier Tape Material: PS (Polystyrene) Top Tape Material: PET (Polyethylene Terephthalate) 0.30.05 Epson 7.40.1 Epson 8.00.1 2.00.1 16.00.2 4.00.1 +0.1 1.55 -0 1.750.1 10P: 40.00.15 2.00.1 7.50.1 +0.1 1.5 -0 Units: mm User direction of feed Top tape 5.10.1 2) Reel Dimensions Reel Material: PS (Polystyrene) Units: mm 3) Storage Environment We recommend to keep less than +30 C and 85 %RH of humidity in a packed condition, and to use it less than 6 months after delivery. Page 39 / 41 Spec No : SG-8018series_E_Ver1.00 [ 13 ] Handling Precautions Prior to using this product, please care ully read the section entitled "Precautions" on our Web site (https://www5.epsondevice.com/en/information/#precaution) for instructions on how to handle and use the product properly to ensure optimal performance of the product in your equipment. Before using the product under any conditions other than those specified therein, please consult with us to verify and confirm that the performance of the product will not be negatively affected by use under such conditions. In addition to the foregoing precautions, in order to avoid the deteriorating performance of the product, we strongly recommend that you DO NOT use the product under ANY of the following conditions: (1) (2) Do not expose this product to excessive mechanical shock or vibration. This product can be damaged by mechanical shock during the soldering process depending on the equipment used, process conditions, and any impact forces experienced. Always follow appropriate procedures, particularly when changing the assembly process in any way and be sure to follow applicable process qualification standards before starting production. (3) These devices are sensitive to ESD, use appropriate precautions during handling, assembly, test, shipment, and installation. (4) The use of ultrasonic technology for cleaning, bonding, etc. can damage the Xtal unit inside this product. Please carefully check for this consideration before using ultrasonic equipment for volume production with this product. (5) Noise and ripple on the power supply may have undesirable affects on operation and cause degradation of phase noise characteristics. Evaluate the operation of this device with appropriate power supplies carefully before use. (6) When applying power, ensure that the supply voltage increases monotonically for proper operation. On power down, do not reapply power until the supplies, bypass capacitors, and any bulk capacitors are completely discharged since that may cause the unit to malfunction. (7) Aging specifications are estimated from environmental reliability tests and expected frequency variation over time. They do not provide a guarantee of aging over the product lifecycle. (8) The metal cap on top of the device is directly connected to the GND terminal (pin #2). Take necessary precautions to prevent any conductor not at ground potential from contacting the cap as that could cause a short circuit to GND. (9) Do not route any signal lines, supply voltage lines, or GND lines underneath the area where the oscillators are mounted including any internal layers and on the opposite side of the PCB. To avoid any issues due to interference of other signal lines, please take care not to place signal lines near the product as this may have an adverse affect on the performance of the product. (10) A bypass capacitor of the recommended value(s) must be connected between the V CC and GND terminals of the product. Whenever possible, mount the capacitor(s) on the same side of the PCB and as close to the product as possible to keep the routing traces short. (11) Power supply connections to VCC and GND pins should be routed as thick as possible while keeping the high frequency impedance low in order to get the best performance. (12) The use of a filter or similar element in series with the power supply connections to protect from electromagnetic radiation noise may increase the high frequency impedance of the power supply line and may cause the oscillator to not operate properly. Please verify the design to ensure sufficient operational margin prior to use. (13) Keep PCB routing from the output terminal(s) to the load as short as possible for best performance. (14) Since the impedance of the Enable (OE/ST) input terminal is high impedance, it is susceptible to noise induction. Use it with low impedance, or when not using Enable (OE/ST), the active high is VCC, It is recommended that active low be connected to GND. (15) Do not short the output to GND as that will damage the product. Always use with an appropriate load resistor connected. (16) This product should be reflowed no more than 3 times. [Availability of mounting conditions] If rework is needed after reflow, please correct it with a soldering iron with the tip set for a temperature of +350 C or less and only contact each terminal once and for no more than 5 seconds. If this product is mounted on the bottom of the board during a reflow please check that it soldered down properly afterwards. (17) Product failures during the warranty period only apply when the product is used according to the recommended operating conditions described in the specifications. Products that have been opened for analysis or damaged will not be covered. It is recommended to store and use in normal temperature and humidity environments described in the specifications to ensure frequency accuracy and prevent moisture condensation. If the product is stored for more than one year, please confirm the pin solderability prior to use. (18) If the oscillation circuit is exposed to condensation, the frequency may change or oscillation may stop. Do not use in any conditions where condensation occurs. (19) Do not store or use the product in an environment where it can be exposed to chemical substances that are corrosive to metal or plastics such as salt water, organic solvents, chemical gasses, etc. Do not use the product when it is exposed to sunlight, dust, corrosive gasses, or other materials for long periods of time. (20) When using water-soluble solder flux make sure to completely remove the flux residue after soldering. Pay particular attention when the residues contain active halogens which will negatively affect the product and its performance. (21) Terminals on the side of the product are internally connected to the IC, be careful not to cause short-circuits or reduce the insulation resistance of them in any way. (22) Should any customer use the product in any manner contrary to the precautions and/or advice herein, such use shall be done at the customer's own ris . Page 40 / 41 Spec No : SG-8018series_E_Ver1.00 PROMOTION OF ENVIRONMENTAL MANAGEMENT SYSTEM CONFORMING TO INTERNATIONAL STANDARDS At Seiko Epson, all environmental initiatives operate under the Plan-Do-Check-Action (PDCA) cycle designed to achieve continuous improvements. The environmental management system (EMS) operates under the ISO 14001 environmental management standard. All of our major manufacturing and non-manufacturing sites, in Japan and overseas, completed the acquisition of ISO 14001 certification. ISO 14000 is an international standard for environmental management that was established by the International Standards Organization in 1996 against the background of growing concern regarding global warming, destruction of the ozone layer, and global deforestation. WORKING FOR HIGH QUALITY In order provide high quality and reliable products and services than meet customer needs, Seiko Epson made early efforts towards obtaining ISO9000 series certification and has acquired ISO9001 for all business establishments in Japan and abroad. We have also acquired IATF 16949 certification that is requested strongly by major manufacturers as standard. IATF 16949 is the international standard that added the sector-specific supplemental requirements for automotive industry based on ISO9001. Explanation of marks used in this datasheet Pb free. Complies with EU RoHS directive. *About the products without the Pb-free mark. Contains Pb in products exempted by EU RoHS directive (Contains Pb in sealing glass, high melting temperature type solder or other) NOTICE: PLEASE READ CAREFULLY BELOW BEFORE THE USE OF THIS DOCUMENT (c)Seiko Epson Corporation 2020 1. The content of this document is subject to change without notice. Before purchasing or using Epson products, please contact with sales representative o Sei o Epson Corporation "Epson") or the latest in ormation and be always sure to chec the latest in ormation published on Epson's o icial web sites and resources. . This document may not be copied, reproduced, or used or any other purposes, in whole or in part, without Epson's prior consent. 3. Information provided in this document including, but not limited to application circuits, programs and usage, is for reference purpose only. Epson ma es no guarantees against any in ringements or damages to any third parties' intellectual property rights or any other rights resulting from the information. This document does not grant you any licenses, any intellectual property rights or any other rights with respect to Epson products owned by Epson or any third parties. 4. 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Epson assumes no responsibility for any damages (whether direct or indirect) caused by or in relation with your non-compliance with the terms and conditions in this document or for any damages (whether direct or indirect) incurred by any third party that you give, transfer or assign Epson products. 10. For more details or other concerns about this document, please contact our sales representative. 11. Company names and product names listed in this document are trademarks or registered trademarks of their respective companies. Page 41 / 41 Spec No : SG-8018series_E_Ver1.00