SANYO LOW-SATURATION VOLTAGE TR SERIES (Snall-Signal Transistors.N0. 1} The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers,electrical equipment. We have a full lineup of new products fabricated using Sanyos original MBIT process technology. They can be applied to various uses because of high quality and small-sized package. Features @Large current capacity. @uHighly resistant to breakdown. @Low noise design. Application areas s Radio cassette recorders, electronic governors, strobes, cameras @Low saturation voltage. @Short switching time. Possible to make sets smallew relay drivers, lamp drivers, audio circuits, hammer drivers, voltage regulators, fluorescent lamps, motor drivers, video equipment, microcomputers peripheral. In addition to the above, the low-saturation voltage TR, Large signal TR series and PCP/5,NMP : package series are available. (*)MBIT process technology New manufacturing method, Multi Base Island Transistors % :Tc=25C. ty :Mounted on PCB (250nm'X0, Bun). @ Contains base to emitter resistance(RBE). For PNP, (-) sign is omitted. Absolute Maximun Electrical Characteristics/Ta=25 Type No. Pack- 5 seine Tee . age CBO| CEO c Cc Ck li hee I I oe (sat) PNP/NPN WV) | WW) | (AD | 1 GW) | (A (A) | (A) | typ (V) max 28A1745/2S8C4555 | MCP 20 15} 0.5] 0.15 2) 10m 135~600 Sm| 0.50] 15m 350/30m 28A1753/28C4577 20 15] 0.5] 0.2 2] 10n 135~600 Sm| 0.5m] 15m 350/30m 2SA1881/28C4983 15 15 1} 0.25 2| 50m 135~600 Sot 0.5m) 10m 25m 28B815/28D1048 20 15; 0.7) 0.2 2) 50m} 200~600/200~900 5m] 0.5m) 15m/10m 35m/25m 25B1295/28D1935 15 15} 0.8] 0.2 2) 50m] 135~600/135~900 5m] 0.5m) 10m 25m /28D2028 1143 0.7] 0.2 2] 50m 200~900 0.1) 10m} 50m 0. 12 028B1527/2SD2324 20 15} 0.8] 0.2 2) 0.5}/min70 @RBE=typlk2| 0.5) 10m] 0.2/0.16 0.4/0.3 2SA1882/2S8C4984 15 15] 1.5) 91.3 2} 50m 140~560 So} 0.5m} 10m 25m 2SA1896 25 20) 2.51s%1.3 2] 0.5 140-400 1.5] 30m] 0, 22 0.4 2SB1118/28D1618 20 15} 0.7)/+1.3 2] 50m 140~560 5m| 0.50] 15m/10m 350/25m 2SB1119/25D1619 25 25 1)1.3 2] 50m 100~560 0.5] 50m} 0.15/0.1 0.7/0.3 2SB1120 20 10} 2.5/1.3 2] 0.5 100~560 1.5] 0.15) 0.25 0. 45 28B1121/2SD1621+ 30 25 2) 41.3 2) O.1 100~560 1.5] 75m} 0.35/0.18 0.6/0. 4 28B1122/2SD1622+ 60 50 1) 41.3 2} 0.1 100~560 0.5) 50m} 0,18/0.12 0.5/0.3 28B1123/2SD16233 60 50 2,w1.3 2; 0.1 100~560 1} 50m] 0.3/0.15 0.7/0.4 2SB1124/2SD1624#] PCP 60 50 3) 1.5 2] 0.1 100~560 2} 0.1) 0.35/0.19 0.7/0.5 02SB1323/2SD1997 40 30 3) %1.5 2| 0. 5]min70@RBE=typ0. 8k 1[ 50m] 0.18/0.12 0.4/0.3 625B1324/28D1998 40 30 3/415 2| 0.5] min70@RBE=typ0. 8k 2| 0.1) 0.25/0.2 0.6/0.5 2S881325/2SD1999 25 20 4921.5 2) 0.5|/min70@RBE=typl. 5k 3] 0.15} 0.25 0.5 625B1394/2SD2099 40 30 3] 1.5 2| 0. 5]min70@RBE=typ0. 8k 1] 50m] 0.18/0.12 0.4/0.3 2SB1396* 15 10 3) 1.3 2] 0.5 140~560 1.5] 30m] 0, 22 0.4 025B1397/28D2100 25 20 2;%13 2] 0.5|min70@RBE=typ1. 6k 1} 50m] 0. 25 0.5 28D1620 30 10 3) 41.3 2 3 typ210 3) 60m} 0.3 0.4 28D1628 60 20 5] v1.5 2} 0.5 120~560 3} 60m 0.5 2SB808/28D1012 20 15} 0.7) 0.25 2| SOm} 160~560/160~960 5a] 0.5m] 15m/100 350/250 2SB1296/2SD1936 SPA 15 15, 0.8] 0.3 2! 50m] 140~560/140~800 5a} 0.5m) 10m 25m 2SB698/25D734 25 20| 0.7] 0.6 2) 50m 60~560 0.5} 50m] 0.2/0.13 0. 45/0.3 2SB893 20 10} 2.5] 0.75 2} 0.5 100~560 1,5] 0.15] 0.25 0.45 28B926/2SD1246% NP 30 25 2] 0.75 2) O.1 100~560 1.5} 75m 0, 35/0. 18 0. 6/0. 4 2SB1229/2SD1835 60 50 2| 0.75 2} 0.1 100~560 1] 50m] 0.3/0.15 0.7/0.4 2SB1395* 15 10 3] 0.75 2} 0.5 140~560 1.5] 30m) 0. 22 0.4 280879 30 10 3] 0.75 2 3 typ210 3} 60m! 0. 3paiee 0.4 These specifications are subject to change without notice. Ca 1:Bas 2:Emi 3:Col se Outlines unit:on ANYO:MC e tter lector A 9. 625, aad } "& 3 _ mw > Nz an tO a a] tal | eae 1. 2.5 2:Collector 3:Emitter J tt SANYO: SPA 1:E, 2:C, 3:B Continuea o SANYO Electric Co.,Ltd. Semiconductor Business Headquarters, TR Division 39 mM next page. MT950123TRSANYO LOW-SATURATION VOLTAGE TR SERIES (Snall-Signal Transistors.NO.2 (#)MBIT process technology New manufacturing method, Multi Base Island Transistors M:Tc=25T,. @:Contains base to emitter resistance(RBE). For PNP,(-) sign is omitted. Case Outlines fj-s0-4| Absolute Maximum Electrical Characteristics/Ta=25C nvorwe f Type No. Packa- Ratings/Ta=25T l:Emitter z ge . 2:Collector | Yewo} esol 'c | Pc Pig le hep cl oR CE(sat) 3:Base | fs PNP /NPN (Vv) | (| CAD) DY] GY AY (A) | (A) | typ () max ay 25B764/2SD863 60] 50 1} 0.9 2) 50m 60~320 0.5] 50m} 0.2/0.15 0.7/0.5 [| T 2SB892/2501207" 60} 50 2 1 2) 0.1 100~560 1] 50m) 0.3/0.15 0. 770.4 2SB927/2SD1247% 30} 25) 2.5 l 2| 0.1 100~560 1.5] 75m} 0.35/0.18 0.6/0.4 16 Ms 2SB985/2SD1347# MP 60} 50 3 1 2) O.1 100~560 2] 0.1] 0.35/0,19 0.7/0.5 & (siete pares SANYO: TP 4S 2SB11314 25] 20 5 1 2| 0.5 100~400 31 60n| 0.25 0. 5}2:B, 2:0, 3:6, 4:C, 2SB1145 60] 20 5| 0.9 2! 0.5 100~560 3| 60m ries 5F 2SA1641/2SC43064 25/30] 20 8| 15 2| 0.5 100~400 5| 0.25] 0. 22 0.4 i 2SB1201/2$D1801# 60} 50 2| %*15 2 0.1 100560 1] 50m] 0.3/0. 15 sao ale 2SB1202/2SD18028 60} 50 3) 15 2) 0.1 100~560 2| 0.1] 0.35/0.19 0.7/0.5]~ 25B1203/2S8D18034 60; 50 5] 3% 20 2) 0.5 70~400 3} 0.15} 0. 28/0. 22 0.55/0.4 25B1204/28D1804x| TP 60] 50 B| 20 2| 0.5 70~400 4} 0.2| 0.25/0.2 6.5/0.4) sanyo: FLP C 2SB1205% 25} 20] 5] 10) 2! 0.5 100-400 3] 600] 0.25 0.51 7E 2:C. 378 wy pty 25B1215/2SD1815s 120} 100 3) 20 5) 0.5 70-400 1.5] 0.15] 0.2/0.15 0.5/0.4 r 2SB1216/2SD18168 120/100 4) 20 51 0.5 70-400 2| 0.2] 0.2/0.15 0.5/0.4 25D1805 60| 20 5] 15 2) 0.5 120+560 31 60m] 0. 22 0.5 92501806 40] 30 2) KIS] 0.5} O.S5imindd @RBE=typlke 2) 40m) 0. 25 0.5 2SA1823/28C4727% 25/30) 20 B| 15 2| 0.5 100-400 5] 0.25] 0. 22 0.4 2541824 /2SC47284 60} 50 5} 1.5 2) 0.5 100~400 3| 0.15} 0. 28/0. 22 0.55/0.4 2541825/28C47298 60} 50 8] 1.5 2) 0.5 100~400 4] 0.2] 0.25/0.2 0.5/0.4 2S41826/2SC47304 120} 100 3} 4.5 5| 0.5 100-400 1.5| 0.15] 6.2/0.15 0.5/0.4 2SA1827/2SC4731% PLP 1201 100 4) 1.5 5| 0.5 100-400 2| 0.21 0.270.158 0.5/0.4 2SA1854% 25) 20 5} 1.5 2| 0.5 100~400 3| 0.06] 0.25 0.5 2504836 60] 20 5! 41.5 2) 0.5 120-560 31 0.06 0.5 2SA1855/2SC4837% 60] 50 4) 15 2] 0.2 100~400 2} 0.1], 0.35/0.19 0.7/0.5 2SB986/2SD 13488 60{ 50 4| 10 2] 0.1 100~560 2| 0.1| 0.35/0.19 0.7/0.5 2S8B1127% TO-126] 25) 20 5| 10 2| 0.5 100~400 3} 60m! 0.25 0.5 2SD826 60} 20 5] x10 2| 0.5 120-560 3] 60m peteeQ.5 28A1798/2SC4675% 25/30} 20 8| %K10 2| 0.5 100-400 5 0,25] 0. 22 G.4 25B1140% 25} 20 5] 10 21 0.5 100-400 3] 60m] 0. 25 0. 8 sanyo: to-12u 25B1141/2SD1681 20/18, 1.2} 10 2) 0.1 70-400 0.5{ 50m) 0.17/0.12 0.4/0.3] 2FE,2:C,3:8 2SB1142/2S8D1682* TOr126] 60] 50) 2.5] #10 2! 0.1] 100-400/100~560 1) 50m} 0.25/0.31 0.5/0.3 25B1143/2SD1683* 60} 50 4] 10 2) @.1 100~566 2{ 0.1] 0.35/0.19 0.7/0.5 2SB1144/2S0 1684" 120/ 100] 1.5} 10 5) 0.1 100~400 0.5| 50m] 0.10.18 0.3/0.5 2501685 60] 20 5) 10 2] 0.5 120~560 3] 60m) 0. 22 0.5 2$B1165/2SD1722s 60} 50 5| 20 2| 0.5 70~400 3| 0.15] 0.2870, 22 0.55/0. 4 25B1166/2SD1723 10-126 60! 50 8] 20 21 0.5 70~400 4{ 0.2] 0,25/0.2 0.5/0.4 2SB1167/2SD1724" 120} 100 3} 20 5} 0.5 70~400 1.5] 0.15] 0.2/0.15 0.5/0.4 2SB1168/2SD1725% 120] 100 4} 3K 20 5) 0.5 70-400 2| 0.2] 0.2/0.15 0.5/0.4 These specifications are subject to change without notice. SANYQ: TO-126LP 1:E, 2C, 3:8 41.0 9.0 5.5 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters, TR Division. 40 MT9S( 123TR