SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – DECEMBER 1995 ✪
FEATURES
* 200 Volt VDS
*R
DS(on)=25Ω
PARTMARKING DETAIL – MU
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 200 V
Continuous Drain Current at Tamb=25°C ID60 mA
Pulsed Drain Current IDM 1A
Gate-Source Voltage VGS ±20 V
Power Dissipation at Tamb=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS 200 V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) 1.0 3.0 V ID=1mA, VDS=V
GS
Gate-Body Leakage IGSS 100 nA VGS=±20V, VDS=0V
Zero Gate Voltage
Drain Current
IDSS 10
50 µA
µA
VDS=200V, VGS=0V
VDS=160V, VGS=0V,
T=125°C(2)
On-State Drain Current(1) ID(on) 250 mA VDS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1)
RDS(on) 25 ΩVGS=10V,ID=100mA
Forward Transconductance(1)
(2)
gfs 75 mS VDS=25V,ID=100mA
Input Capacitance (2) Ciss 45 pF
Common Source
Output Capacitance (2)
Coss 18 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
(2)
Crss 5pF
Turn-On Delay Time (2)(3) td(on) 5ns
VDD ≈25V, ID=100mA
Rise Time (2)(3) tr7ns
Turn-Off Delay Time (2)(3) td(off) 6ns
Fall Time (2)(3) tf6ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ωsource impedance and <5ns rise time on a pulse generator
ZVN3320F
D
G
S
SOT23
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