TB3R1, TB3R2 www.ti.com SLLS587C - NOVEMBER 2003 - REVISED JANUARY 2008 QUAD DIFFERENTIAL PECL RECEIVERS FEATURES 1 * * * * * * * * * * * * * Low-Voltage Functional Replacements for the Agere BRF1A, BRF2A, BRS2A, and BRS2B Pin-Equivalent to General Trade 26LS32 Devices High-Input Impedance Approximately 8 k 3.5-ns Maximum Propagation Delay TB3R1 Provides 50-mV Hysteresis TB3R2 With -125-mV Threshold Offset for Preferred State Output -0.5-V to 5.2-V Common Mode Range Single 3.3 V 10% Supply Slew Rate Limited (0.5 ns min 80% to 20%) TB3R2 Output Defaults to Logic 1 When Inputs Left Open or Shorted to VCC or GND ESD Protection HBM > 3 kV, CDM > 2 kV Operating Temperature Range: -40C to 85C Available SOIC (D) Package The power-down loading characteristics of the receiver input circuit are approximately 8 k relative to the power supplies; hence they do not load the transmission line when the circuit is powered down. The package for these differential line receivers is the 16-pin SOIC (D) package. The enable inputs of this device include internal pullup resistors of approximately 40 k that are connected to VCC to ensure a logical high level input if the inputs are open circuited. PIN ASSIGNMENTS D PACKAGE (TOP VIEW) AI AI AO E1 BO BI BI GND APPLICATIONS * Digital Data or Clock Transmission Over Balanced Lines 1 2 3 4 5 6 7 8 VCC DI DI DO E2 CO CI CI FUNCTIONAL BLOCK DIAGRAM DESCRIPTION AI These quad differential receivers accept digital data over balanced transmission lines. They translate differential input logic levels to TTL output logic levels. AI The TB3R1 is a pin- and function-compatible replacement for the Agere Systems BRF1A and BRF2A; it includes 3-kV HBM and 2-kV CDM ESD protection. C1 The TB3R2 is a pin- and function-compatible replacement for the Agere Systems BRS2A and BRS2B and incorporates a -125-mV receiver input offset, preferred state output, 3-kV HBM and 2-kV CDM ESD protection. The TB3R2 preferred state feature places the output in the high state when the inputs are open, shorted to ground, or shorted to the power supply. 16 15 14 13 12 11 10 9 AO BI BO BI C1 CO D1 DO D1 E1 E2 Enable Truth Table E1 E2 CONDITION 0 0 Active 1 0 Active 0 1 Disabled 1 1 Active 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright (c) 2003-2008, Texas Instruments Incorporated TB3R1, TB3R2 www.ti.com SLLS587C - NOVEMBER 2003 - REVISED JANUARY 2008 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION PART NUMBER PART MARKING Package LEAD FIISH STATUS TB3R1D TB3R1 SOIC NiPdAu Production TB3R2D TB3R2 SOIC NiPdAu Production POWER DISSIPATION RATINGS PACKAGE D THERMAL RESISTANCE, JUNCTION-TO-AMBIENT WITH NO AIR FLOW Low-K (1) 763 mW High-K (2) 1190 mW 831 mW 1240 mW Low-K DW (1) (2) POWER RATING TA 25C CIRCUIT BOARD MODEL (1) High-K (2) DERATING FACTOR(1) TA 25C POWER RATING TA = 85C 131.1C/W 7.6 mW/C 305 mW 84.1C/W 11.9 mW/C 475 mW 120.3C/W 8.3 mW/C 332 mW 80.8C/W 12.4 mW/C 494 mW In accordance with the low-K thermal metric definitions of EIA/JESD51-3. In accordance with the high-K thermal metric definitions of EIA/JESD51-7. THERMAL CHARACTERISTICs PARAMETER JB Junction-to-Board Thermal Resistance JC Junction-to-Case Thermal Resistance PACKAGE VALUE UNIT D 47.5 C/W DW 53.7 C/W D 44.2 C/W DW 47.1 C/W ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range unless otherwise noted (1) UNIT Supply voltage, VCC 0 V to 6 V Magnitude of differential bus (input) voltage, |VAI - V|, |VBI - V|, |VCI - V|, |VDI - V| ESD Human Body Model (2) Charged-Device Model (3) All pins All pins Continuous power dissipation (2) (3) 2 3 kV 2 kV See Dissipation Rating Table Storage temperature, Tstg (1) 6.5 V -65C to 150C Stresses beyond those listed under absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Tested in accordance with JEDEC Standard 22, Test Method A114-A. Tested in accordance with JEDEC Standard 22, Test Method C101. Submit Documentation Feedback Copyright (c) 2003-2008, Texas Instruments Incorporated Product Folder Link(s): TB3R1 TB3R2 TB3R1, TB3R2 www.ti.com SLLS587C - NOVEMBER 2003 - REVISED JANUARY 2008 RECOMMENDED OPERATING CONDITIONS MIN Nom 3 3.3 Supply voltage, VCC MAX UNIT 3.6 V -0.6 (1) 5.3 V Magnitude of differential input voltage, |VAI - V|, |VBI - V|, |VCI - V|, |VDI - V| 0.1 5 V Operating free-air temperature, TA -40 85 C Bus pin input voltage, VAI, V, VBI, V, VCI, V, VDI, V (1) The algebraic convention, in which the least positive (most negative) limit is designated as minimum is used in this data sheet, unless otherwise noted. DEVICE ELECTRICAL CHARACTERISTICS over operating free-air temperature range unless otherwise noted PARAMETER Supply current (1) ICC (1) TEST CONDITIONS MIN TYP MAX UNIT Outputs disabled 34 mA Outputs enabled 32 mA Current is dc power draw as measured through GND pin and does not include power delivered to load. ELECTRICAL CHARACTERISTICS over operating free-air temperature range unless otherwise noted parameter test conditions min VOL Output low voltage VCC = 3 V, IOL = 8 mA VOH Output high voltage VCC = 3 V, IOH = -400 A VIL Low level enable input voltage (1) VCC = 3.6 V VIH High level enable input voltage (1) VCC = 3.6 V VIK Enable input clamp voltage VCC = 3 V, VTH+ Positive-going differential input threshold voltage (1), (Vxl - V) x = A, B, C, or D VTH- Negative-going differential input threshold voltage (1), (Vxl - V) x = A, B, C, or D VHYST Differential input threshold voltage hysteresis, (VTH+ - VTH_) TB3R1 IOZL IOZH Output off-state current, (High-Z) IOS Output short circuit current IIL Enable input low current IIH (4) Enable input high current VCC = 3.6 V unit 0.4 2.4 V V 0.8 2 V V II = -5 mA -1 (2) V TB3R1 100 mV TB3R2 (3) -50 mV -100 (2) mV (2) mV TB3R1 TB3R2 (3) -200 50 mV VO = 0.4 V -20 (2) A VO = 2.4 V 20 A (2) mA VCC = 3.6 V VCC = 3.6 V, max -100 VIN = 0.4 V -400 (2) A VIN = 2.7 V 20 A VIN = 3.6 V 100 A IIL Differential input low current VCC = 3.6 V, VIN = -1.2 V -2 (2) mA IIH Differential input high current VCC= 3.6 V, VIN = 5.3 V 1 mA RO Output resistance (1) (2) (3) (4) Enable input reverse current VCC = 3.6 V typ 20 The input levels and difference voltage provide no noise immunity and should be tested only in a static, noise-free environment. This parameter is listed using a magnitude and polarity/direction convention, rather than an algebraic convention, to match the original Agere data sheet. Outputs of unused receivers assume a logic 1 level when the inputs are left open. (It is recomended that all unused positive inputs be tied to the positive power supply. No external series resistor is required.) Test must be performed one lead at a time to prevent damage to the device. Submit Documentation Feedback Copyright (c) 2003-2008, Texas Instruments Incorporated Product Folder Link(s): TB3R1 TB3R2 3 TB3R1, TB3R2 www.ti.com SLLS587C - NOVEMBER 2003 - REVISED JANUARY 2008 SWITCHING CHARACTERISTICS over operating free-air temperature range unless otherwise noted parameter test conditions tPLH Propagation delay time, low-to-high-level output tPHL Propagation delay time, high-to-low-level output tPLH Propagation delay time, low-to-high-level output tPHL Propagation delay time, high-to-low-level output tPHZ Output disable time, high-level-to-high-impedance output (2) tPLZ Output disable time, low-level-to-high-impedance output (2) tskew1 CL = 0 pF (1), See Figure 2 and Figure 4 CL = 15 pF, See Figure 2 and Figure 4 max 1.8 3.5 1.8 3.5 2.3 4 2.3 4 4.4 12 ns 3.3 12 ns 0.7 ns 4 ns 1.4 ns 1.5 ns CL = 150 pF, See Figure 2 and Figure 4 CL = 10 pF, TA = 75C, See Figure 2 and Figure 4 (3) 0.8 CL = 10 pF, TA = -40C to 85C, See Figure 2 and Figure 4 tskew Same part output waveform skew (3) tPZH Output enable time, high-impedance-to-high-level output (2) tPZL Output enable time, high-impedance-to-low-level output (2) tTLH Rise time (20%-80%) tTHL Fall time (80%-20%) (1) (2) (3) CL = 5 pF See Figure 3 and Figure 5 CL = 10 pF, See Figure 2 and Figure 4 ns ns 0.3 ns 6 12 ns 4 12 ns 0.5 2 ns 0.5 2 ns CL = 10 pF, See Figure 3 and Figure 4 CL = 10 pF, See Figure 2 and Figure 4 uni t typ CL = 10 pF, See Figure 2 and Figure 4 Pulse width distortion, |tPHL - tPLH| tskew1p-p Part-to-part output waveform skew min The propagation delay values with a 0 pF load are based on design and simulation. See Table 1. Output waveform skews are when devices operate with the same supply voltage, same temperature, have the same packages and the same test circuits. TYPICAL CHARACTERISTICS TYPICAL PROPAGATION DELAY vs LOAD CAPACITANCE 8 t pd - Propagation Delay Time - ns TA = 255C VCC = 3.3 V 6 tPHL tPLH 4 2 0 0 50 100 150 200 CL - Load Capacitance - pF A. 4 NOTE: This graph is included as an aid to the system designers. Total circuit delay varies with load capacitance. The total delay is the sum of the delay due to external capacitance and the intrinsic delay of the device. Intrinsic delay is listed in the table above as the 0 pF load condition. The incremental increase in delay between the 0 pF load condition and the actual total load capacitance represents the extrinsic, or external delay contributed by the load. Figure 1. Typical Propagation Delay vs Load Capacitance at 25C Submit Documentation Feedback Copyright (c) 2003-2008, Texas Instruments Incorporated Product Folder Link(s): TB3R1 TB3R2 TB3R1, TB3R2 www.ti.com SLLS587C - NOVEMBER 2003 - REVISED JANUARY 2008 TYPICAL CHARACTERISTICS (continued) 3.7 V INPUT 3.2 V 2.7 V INPUT t PHL OUTPUT t PLH 80% V OH 80% 1.5 V 20% 20% t THL V OL t TLH Figure 2. Receiver Propagation Delay Times E1(A) 2.4 V 1.5 V 0.4 V 2.4 V E1(B) 1.5 V 0.4 V t PHZ t PZH t PLZ t PZL VOH OUTPUT VOL 0.2 V 0.2 V 0.2 V 0.2 V A. E2 = 1 while E1 changes states. B. E1 = 0 while E2 changes states. Figure 3. Receiver Enable and Disable Timing Parametric values specified under the Electrical Characteristics and Timing Characteristics sections for the data transmission driver devices are measured with the following output load circuits. TO OUTPUT OF DEVICE UNDER TEST CL CL includes test-fixture and probe capacitance. Figure 4. Receiver Propagation Delay Time and Enable Time (tPZH, tPZL) Test Circuit TO OUTPUT OF DEVICE UNDER TEST 500 W 1.5 V CL CL includes test-fixture and probe capacitance. Figure 5. Receiver Disable Time (tPHZ, tPLZ) Test Circuit Submit Documentation Feedback Copyright (c) 2003-2008, Texas Instruments Incorporated Product Folder Link(s): TB3R1 TB3R2 5 TB3R1, TB3R2 www.ti.com SLLS587C - NOVEMBER 2003 - REVISED JANUARY 2008 TYPICAL CHARACTERISTICS (continued) LOW-TO-HIGH PROPAGATION DELAY vs FREE-AIR TEMPERATURE HIGH-TO-LOW PROPAGATION DELAY vs FREE-AIR TEMPERATURE 5 t PHL - High to Low Propagation Delay - ns tPLH - Low-to-High Propagation Delay - ns 5 VCC = 3.3 V 4 Max 3 Nom 2 Min 1 -50 0 50 100 VCC = 3.3 V 4 Max 3 Min 2 1 -50 150 TA - Free-Air Temperature - 5C MINIMUM VOH AND MAXIMUM VOL vs FREE-AIR TEMPERATURE 100 150 35 VCC = 3.3 V VOH min ICC max at VCC = 3.6 V ICC - Supply Current - mA 3 VO - Output Voltage - V 50 TYPICAL AND MAXIMUM ICC vs FREE-AIR TEMPERATURE 3.5 2.5 2 1.5 1 0.5 30 25 20 ICC Typical at VCC = 3.3 V VOL max 0 50 100 TA - Free-Air Temperature - C 150 15 -50 Figure 8. 6 0 TA - Free-Air Temperature - 5C Figure 7. Figure 6. 0 -50 Nom 0 50 100 TA - Free-Air Temperature - 5C 150 Figure 9. Submit Documentation Feedback Copyright (c) 2003-2008, Texas Instruments Incorporated Product Folder Link(s): TB3R1 TB3R2 TB3R1, TB3R2 www.ti.com SLLS587C - NOVEMBER 2003 - REVISED JANUARY 2008 APPLICATION INFORMATION Power Dissipation The power dissipation rating, often listed as the package dissipation rating, is a function of the ambient temperature, TA, and the airflow around the device. This rating correlates with the device's maximum junction temperature, sometimes listed in the absolute maximum ratings tables. The maximum junction temperature accounts for the processes and materials used to fabricate and package the device, in addition to the desired life expectancy. There are two common approaches to estimating the internal die junction temperature, TJ. In both of these methods, the device internal power dissipation PD needs to be calculated This is done by totaling the supply power(s) to arrive at the system power dissispation: V Sn I Sn (1) and then subtracting the total power dissipation of the external load(s): (V Ln I Ln) (2) The first TJ calculation uses the power dissipation and ambient temperature, along with one parameter: JA, the junction-to-ambient thermal resistance, in degrees Celsius per watt. The product of PD and JA is the junction temperature rise above the ambient temperature. Therefore: T J + T A ) PD q JA (3) 140 Thermal Impedance - C/W 120 The standardized JA values may not accurately represent the conditions under which the device is used. This can be due to adjacent devices acting as heat sources or heat sinks, to nonuniform airflow, or to the system PCB having significantly different thermal characteristics than the standardized test PCBs. The second method of system thermal analysis is more accurate. This calculation uses the power dissipation and ambient temperature, along with two device and two system-level parameters: * JC, the junction-to-case thermal resistance, in degrees Celsius per watt * JB, the junction-to-board thermal resistance, in degrees Celsius per watt * CA, the case-to-ambient thermal resistance, in degrees Celsius per watt * BA, the board-to-ambient thermal resistance, in degrees Celsius per watt. In this analysis, there are two parallel paths, one through the case (package) to the ambient, and another through the device to the PCB to the ambient. The system-level junction-to-ambient thermal impedance, JA(S), is the equivalent parallel impedance of the two parallel paths: T J + T A ) PD q JA(S) + 100 80 DW, High-K D, High-K 60 100 q JA(S) (4) where D, Low-K DW, Low-K 40 0 which the device is mounted, and on the airflow over the device and PCB. JEDEC/EIA has defined standardized test conditions for measuring JA. Two commonly used conditions are the low-K and the high-K boards, covered by EIA/JESD51-3 and EIA/JESD51-7 respectively. Figure 10 shows the low-K and high-K values of JA versus air flow for this device and its package options. 200 300 400 500 q JC)q CA q JB)q BA q JC)q CA)q JB)q BA (5) The device parameters JC and JB account for the internal structure of the device. The system-level parameters CA and BA take into account details of the PCB construction, adjacent electrical and mechanical components, and the environmental conditions including airflow. Finite element (FE), finite difference (FD), or computational fluid dynamics (CFD) programs can determine CA and BA. Details on using these programs are beyond the scope of this data sheet, but are available from the software manufacturers. Air Flow - LFM Figure 10. Thermal Impedance vs Air Flow Note that JA is highly dependent on the PCB on Submit Documentation Feedback Copyright (c) 2003-2008, Texas Instruments Incorporated Product Folder Link(s): TB3R1 TB3R2 7 PACKAGE OPTION ADDENDUM www.ti.com 22-Oct-2007 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TB3R1D ACTIVE SOIC D 16 40 Pb-Free (RoHS) CU NIPDAU Level-2-250C-1YEAR/ Level-1-220C-UNLIM TB3R1DE4 ACTIVE SOIC D 16 40 Pb-Free (RoHS) CU NIPDAU Level-2-250C-1YEAR/ Level-1-220C-UNLIM TB3R1DR ACTIVE SOIC D 16 2500 Pb-Free (RoHS) CU NIPDAU Level-2-250C-1YEAR/ Level-1-220C-UNLIM TB3R1DRE4 ACTIVE SOIC D 16 2500 Pb-Free (RoHS) CU NIPDAU Level-2-250C-1YEAR/ Level-1-220C-UNLIM TB3R2D ACTIVE SOIC D 16 40 Pb-Free (RoHS) CU NIPDAU Level-2-250C-1YEAR/ Level-1-220C-UNLIM TB3R2DE4 ACTIVE SOIC D 16 40 Pb-Free (RoHS) CU NIPDAU Level-2-250C-1YEAR/ Level-1-220C-UNLIM TB3R2DR ACTIVE SOIC D 16 2500 Pb-Free (RoHS) CU NIPDAU Level-2-250C-1YEAR/ Level-1-220C-UNLIM TB3R2DRE4 ACTIVE SOIC D 16 2500 Pb-Free (RoHS) CU NIPDAU Level-2-250C-1YEAR/ Level-1-220C-UNLIM Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. 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Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TB3R1DR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1 TB3R2DR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TB3R1DR SOIC D 16 2500 367.0 367.0 38.0 TB3R2DR SOIC D 16 2500 367.0 367.0 38.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. 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