©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
BCX70G
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Refer to KST5088 for graphs
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base V olt age 45 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current 200 mA
PCCollector Power Dissipation 350 mW
TSTG Storage Temperature -55 ~ 150 °C
Symbol Param ete r Test Condit ion Min. Max. Units
BVCEO Collect or-E mitter Break down Voltage IC=2mA, IB=0 45 V
BVEBO Emitter-Base Breakdown Voltage IE=1µA, IC=0 5 V
ICES Collector Cut-off Current VCE=32V, VBE=0 20 nA
IEBO Emitter Cut-off Current VEB=4V, IC=0 20 nA
hFE DC Current Gain VCE=5V, IC=2mA
VCE=1V, IC=50mA 120
60 220
VCE (sat) Collector-Emitter Saturat ion Voltage IC=10mA, IB=0.25mA
IC=50mA, IB=1.25mA 0.35
0.55 V
V
VBE (sat) Base-Emitter Saturat ion Voltage IC=10mA, IB=0.25mA
IC=50mA, IB=1.25mA 0.6
0.7 0.85
1.05 V
V
VBE (on) Base-Emitter On Voltage IC=2mA, VCE=5V 0.55 0.75 V
fTCurrent Gain Bandwidth Product VCE=5V, IC=10mA 125 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 4.5 pF
NF Noise Figure IC=0.2mA, VCE=5V
f=1KHz, RS=2K6dB
tON Turn On Time IC=10mA, IB1=1mA 150
tOFF Turn Off Time IB2=1mA, VBB=3.6V
RL=990 R1=R2=5K800 ns
ns
BCX70G
General Purpose Transistor
AG
Marking
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Package Dimensions
BCX70G
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
SOT-23
©2002 Fairchild Semiconductor Corporation Rev. I1
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