UTC 2SD882ANL N PN EPITAXIAL SIL I C O N T R A N S IS T O R
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R211-016,B
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SB772ANL
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
TO-92NL
1
1:EMITTER 2:COLLECTOR 3:BASE
*Pb-free plating product number: 2SD882ANLK
ABSOLUTE MAXIMUM RATINGS (Ta=25°C )
PARAMETERS SYMBOL RATINGS UNIT
Collector-base voltage VCBO 40 V
Collector-emitter voltage VCEO 30 V
Emitter-base voltage VEBO 5 V
Collector dissipation Pc 1 W
Collector current(DC) Ic 3 A
Collector current(PULSE) Ic 7 A
Base current IB 0.6 A
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector cut-off current ICBO V
CB=30V,IE=0 1000 nA
Emitter cut-off current IEBO V
EB=3V,Ic=0 1000 nA
DC current gain(note 1) hFE1
hFE2
VCE=2V,Ic=20mA
VCE=2V,Ic=1A
30
100
200
150
400
Collector-emitter saturation voltage VCE(sat) Ic=2A,IB=0.2A 0.3 0.5 V
Base-emitter saturation voltage VBE(sat) Ic=2A,IB=0.2A 1.0 2.0 V
Current gain bandwidth product fT V
CE=5V,Ic=0.1A 80 MHz
Output capacitance Cob VCB=10V,IE=0,f=1MHz 45 pF
Note 1:Pulse test:PW<300µs,Duty Cycle<2%
UTC 2SD882ANL N PN E P I T A X I A L SIL I C O N T R A N S IS T O R
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R211-016,B
CLASSIFICATION OF hFE2
RANK Q P E
RANGE 100-200 160-320 200-400
TYPICAL PARAMETERS PERFORMANCE
Fig.1 Static characteristics
Collector-Emitter voltage (V)
Collector current, Ic (A)
04 8121620
0
0.4
0.8
1.2
1.6
Case Temperature, Tc ( )℃
IB=1mA
IB=2mA
IB=3mA
IB=4mA
IB=5mA
IB=6mA
IB=7mA
IB=8mA
IB=9mA
Fig.2 Derating curve of safe
operating areas
Ic Derating (%)
200150100500-50
0
50
100
150
S/b limited
Dissipation limited
Case Temperature,Tc ( )℃
200150100500-50
Fig.3 Power Derating
Power Dissipation (W)
0
4
8
12
Fig.4 Collector Output
capacitance
Collector-Base Voltage (v)
Output Capacitance (pF)
10 010-1 10-2 10-3
101
102
103
100
IE=0
f=1MHz
Fig.5 Current gain-
bandwidth product
Current gain-
bandwidth product, FT (MHz)
101
102
103
100
VCE=5V
Collector-Emitter Voltage
Collector current, Ic (A)
Fig.6 Safe operating area
Ic(max),DC
Ic(max),Pulse
10mS
1mS
0.1mS
Collector current, Ic (A)
Fig.7 DC current gain
Collector current, Ic (mA) Collector current, Ic (mA)
Fig.8 Saturation Voltage
DC current Gain, HFE
101
102
103
100
Saturation Voltage (mV)
VCE=2V
VCE(sat)
VBE(sat)
10-2 10-1 10 010110-2
10-1
10 0
101
10 0101102
100101102103104100101102103104
100
101
102
103
104
IB=8mAIB=8mA
UTC 2SD882ANL N PN E P I T A X I A L SIL I C O N T R A N S IS T O R
UTC UNISONIC TECHNOLOGIES CO. LTD 3
QW-R211-016,B
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
