MIL-PRF-19500/557F
09 December 1997
SUPERSEDING
MIL-S-19500/557E
9 December 1994
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor
intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated
device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1, TO-205AF (formerly TO-39), figure 3 (LCC), and figure 4 for JANHC and JANKC die
dimensions.
1.3 Maximum ratings. Unless otherwise specified, TA = +25
(
C.
Type
3/ PT 1/
TC = +25
(
CPT
TA = +25
(
CVDS VDG VGS ID1 2/
TC = +25
(
C ID2 2/
TC = +100
(
CISIDM TJ and
TSTG
2N6796
2N6798
2N6800
2N6802
W
25
25
25
25
W
0.8
0.8
0.8
0.8
V dc
100
200
400
500
V dc
100
200
400
500
V dc
20
20
20
20
A dc
8.0
5.5
3.0
2.5
A dc
5.0
3.5
2.0
1.5
A dc
8.0
5.5
3.0
2.5
A(pk)
32
22
14
11
(
C
-55 to +150
-55 to +150
-55 to +150
-55 to +150
1/ Derate linearly 0.2 W/
(
C for TC > +25
(
C. TJ max - TC
PT =
R
JC
2/
DJ( ) C
JX) DS(on) J( )
I = T - T
(R x (R at T
max
max
θ
3/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.
AMSC N/A FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 09 March 1998
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
MIL-PRF-19500/557F
2
Dimensions
Inches
Millimeters
Ltr
Min
Max
Min
Max
Notes
CH
.160
.180
4.07
4.57
LC
.200 TP
5.08 TP
6
LD
.016
.021
0.41
0.53
7,8
LU
.016
.019
0.41
0.48
7,8
HD
.335
.370
8.51
9.40
CD
.305
.335
7.75
8.51
TW
.028
.034
0.71
0.86
2
TL
.029
.045
0.74
1.14
3
LL
.500
.750
12.70
19.05
7,8
L1
.050
1.27
7,8
L2
.250
6.35
7,8
P
.100
2.54
5
Q
.050
1.27
4
r
.010
0.25
9
a
45 TP
45 TP
6
NOTES:
1. Dimensions are inches. Metric equivalents are given for general information only.
2. Beyond radius (r) maximum, TW shall be held for a minimum length of .011 inch (0.028 mm).
3. Dimension TL measured from maximum HD.
4. Outline in this zone is not controlled.
5. Dimension CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by
direct methods or by the gauge and gauging procedure shown on figure 2.
7. LU applies between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL min.
8. All three leads.
9. Radius (r) applies to both inside corners of tab.
10. Drain is electrically connected to the case.
11. In accordance with ANSI Y14.5M, diameters are equivalent to
1
x symbology.
FIGURE 1. Physical dimensions for TO-205AF.
MIL-PRF-19500/557F
3
Dimensions
Inches
Millimeters
Ltr
Min
Max
Min
Max
Notes
1
b1
.0595
.0605
1.511
1.537
1
b2
.0325
.0335
0.826
0.851
e
.1995
.2005
5.067
5.093
e1
.0995
.1005
2.527
2.553
h
.150 Nominal
3.81 Nominal
j
.0175
.0180
0.444
0.457
j1
.0350
.0355
0.889
0.902
k
.009
.011
0.23
0.28
k1
.125 Nominal
3.18 Nominal
L
.372
.378
9.45
9.60
L1
.054
.055
1.37
1.40
S
.182
.199
4.62
5.05
2
44.90
(
45.10
(
44.90
(
45.10
(
NOTES: 1. Dimensions are in inches. Metric equivalents are given for general information only.
2. The location of the tab locator within the limits indicated will be determined by the tab and flange dimensions of
the device being checked.
3. Gauging procedure. The device being measured shall be inserted until its seating plane is .125
.010 inch
(3.18
0.25 mm) from the seating surface of the gauge. A force of 8
.5 ounces shall then be applied parallel
and symmetrical to the device's cylindrical axis. When examined visually after the force application (the force
need not be removed), the seating plane of the device shall be seated against the gauge. The use of a pin
straightener prior to insertion in the gauge is permissible.
4. Gauging plane.
5. Drill angle.
FIGURE 2. Gauge for lead and tab locations.
MIL-PRF-19500/557F
4
Sym.
Inches
Millimeters
Min
Max
Min
Max
BL
.345
.360
8.77
9.14
BW
.280
.295
7.12
7.49
CH
.095
.115
2.42
2.92
LL1
.040
.055
1.02
1.39
LL2
.055
.065
1.40
1.65
LS
.050 BSC
1.27 BSC
LS1
.025 BSC
0.635 BSC
NOTES:
1. Dimensions are in inches. Metric equivalents are
LS2
.008 BSC
0.203 BSC
given for information only.
2. In accordance with ANSI Y14.5M, diameters are
LW
.020
.030
0.51
0.76
equivalent to
1
x symbology.
Q1
.105 REF
2.67 REF
Q2
.120 REF
3.05 REF
Q3
.045
.055
1.15
1.39
TL
.070
.080
1.78
2.03
TW
.120
.130
3.05
3.30
FIGURE 3. Physical dimensions for LCC.
MIL-PRF-19500/557F
5
2N6796 2N6798 2N6800 and 2N6802
Inch mm
Inch mm
Inch mm
.016 0.41
.031 0.79
.116 2.95
.018 0.46
.033 0.84
.148 3.76
.019 0.48
.034 0.86
.180 4.57
.025 0.64
.041 1.04
.181 4.60
.026 0.66
.106 2.69
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Unless otherwise specified, tolerance is
.005 inch (
0.13 mm).
4. The physical characteristics of the die are: the back metals are chromium, nickel, and silver. The
top metal is aluminum and the back contact is the drain.
5. Die thickness is .0187 inch (0.475 mm).
FIGURE 4. JANHCA and JANKCA die dimensions.
MIL-PRF-19500/557F
6
1.4 Primary electrical characteristics at TC = +25
(
C.
Type
2/ Min V(BR)DSS
VGS = 0 V dc
ID = 1.0 mA dc
VGS(th)1
VDS
VGS
ID = 0.25 mA dc
Max IDSS1
VGS = 0 V dc Max rDS(on) 1/
VGS = 10 V dc R
JC
maximum
VDS = 80
percent of
rated VDS
TJ = +25
(
C
at ID2 TJ = +150
(
C
at ID2
2N6796
2N6798
2N6800
2N6802
V dc
100
200
400
500
V dc
Min Max
2.0 4.0
2.0 4.0
2.0 4.0
2.0 4.0
A dc
25
25
25
25
ohm
0.18
0.40
1.00
1.50
ohm
0.39
0.84
2.78
4.00
(
C/W
5.0
5.0
5.0
5.0
1/ Pulsed (see 4.5.1).
2/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.
2. APPLICABLE DOCUMENTS
2.1 Government documents.
2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.3).
SPECIFICATION
MILITARY
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Defense
Printing Service Detachment Office, Building 4D (Customer Service), 700 Robbins Avenue, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this
document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific
exemption has been obtained.
3. REQUIREMENTS
3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein.
3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-
19500 and as follows:
C - - - - - - - - - - - - - - - - - - - - - Coulomb.
gFS - - - - - - - - - - - - - - - - - - - - DC forward transconductance.
IS - - - - - - - - - - - - - - - - - - - - - Source current through drain (forward biased VSD).
V(BR)DSS - - - - - - - - - - - - - - - - - - Drain to source breakdown voltage, all other terminals short-circuited to source.
I(ISO) - - - - - - - - - - - - - - - - - - Source pin to case isolation current.
MIL-PRF-19500/557F
7
3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in
MIL-PRF-19500, and figures 1 (T0-39 ), 3 ( LCC) and 4 (die) herein.
3.3.1 Lead material and finish. Lead material shall be Kovar, Alloy 52 (for the T0-205AF), and a copper or plated core is permitted.
Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired,
it shall be specified in the acquisition document (see 6.3).
3.3.2 Internal construction. Multiple chip construction shall not be permitted.
3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking of country of origin
may be omitted from the body of the transistor, but shall be retained on the initial container.
3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection.
3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge.
The following handling practices shall be followed:
a. Devices shall be handled on benches with conductive handling devices.
b. Ground test equipment, tools, and personnel handling devices.
c. Do not handle devices by the leads.
d. Store devices in conductive foam or carriers.
e. Avoid use of plastic, rubber, or silk in MOS areas.
f. Maintain relative humidity above 50 percent, if practical.
g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead.
h. Gate must be terminated to source, R
100 k, whenever bias voltage is to be applied drain to source.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as
specified in 1.3, 1.4, and table I.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3.
3.8 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing
on the applicable qualified products list before contract award (see 4.2 and 6.2 ).
4. VERIFICATION
4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for
qualification inspection in accordance with MIL-PRF-19500.
4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and table II herein.
4.2.2 JANHC and JANKC die. Qualification shall be in accordance with MIL-PRF-19500.
MIL-PRF-19500/557F
8
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 and as
specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I
herein shall not be acceptable.
4.3.1 Screening (JANHC and JANKC). Screening of die shall be in accordance with MIL-PRF-19500. As a minimum, die shall be
100-percent probed in accordance with group A, subgroup 2 except test current shall not exceed 20 A.
Measurement
Screen (see table IV
of MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
1/
Gate stress test (see 4.5.5)
Gate stress test (see 4.5.5)
1/
Method 3161 (see 4.5.3)
Method 3161 (see 4.5.3)
2/
Method 3470 (optional)
Method 3470 (optional)
3
Method 1051, test condition G
Method 1051, test condition G
9 1/
IGSS1, IDSS1, subgroup 2 of table I
Subgroup 2 of table I herein
herein
10
Method 1042, test condition B
Method 1042, test condition B
11
IGSS1, IDSS1, rDS(on)1, VGS(th)1,
IGSS1, IDSS1, rDS(on)1,
subgroup 2 of table I herein;
VGS(th)1, subgroup 2 of table I
I
GSS1 =
20 nA dc or
100 percent
herein.
of initial value, whichever is
greater.
I
DSS1 =
25
A dc or
100 percent of
initial value, whichever is greater.
12
Method 1042, test condition A,
Method 1042, test condition A
t = 240 hours
13
Subgroups 2 and 3 of table I herein;
Subgroup 2 of table I herein;
I
GSS1 =
20 nA dc or
100 percent of
IGSS1 =
20 nA dc or
100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
I
DSS1 =
25
A dc or
100 percent of
IDSS1 =
25
A dc or
100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
r
DS(on)1 =
20 percent of initial
rDS(on)1 =
20 percent of initial
value.
value.
V
GS(th)1 =
20 percent of initial
VGS(th)1 =
20 percent of initial
value.
value.
1/ Shall be performed anytime before screen 10.
2/ Method 3470 is optional if performed as a sample in group A, subgroup 5.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for
conformance inspection in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical
measurements (end-points) shall be in accordance with the inspections of table I, group A, subgroup 2 herein.
MIL-PRF-19500/557F
9
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall
be in accordance with the inspections of table I, group A, subgroup 2 herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup Method Condition
3 1051 Test condition G.
4 1042 Test condition D; 2,000 cycles. The heating cycle shall be 1 minute minimum.
5 1042 Accelerated steady-state operation life; test condition A; VDS = rated TA = +175
(
C, t = 120
hours. Read and record V(BR)DSS (pre and post) at 1 mA = ID. Read and record IDSS
(pre and post). Deltas for V(BR)DSS shall not exceed 10 percent and IDSS shall not
exceed 25
A. Accelerated steady-state gate stress; condition B, VGS = rated, TA =
+175
(
C, t = 24 hours.
5 2037 Bond strength (Al-Au die interconnects only); test condition A.
6 3161 See 4.5.2.
4.4.2.2 Group B inspection, table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup Method Condition
2 1051 Test condition G.
3 1042 Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum.
3 2037 Test condition A. All internal bond wires for each device shall be pulled separately.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the inspections of table I,
group A, subgroup 2 herein.
Subgroup Method Condition
2 2036 Test condition E (Not required for LCC).
6 1042 Test condition D, 6,000 cycles. The heating cycle shall be 1 minute minimum.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750.
R
JC(max) = 5.0
(
C/W.
a. Measuring current (IM) - - - - - - - - - - - - 10 mA.
b. Drain heating current (IH) - - - - - - - - - - 1 A minimum, (1.3 A minimum for LCC.)
c. Heating time (tH) - - - - - - - - - - - - - - Steady-state (see MIL-STD-750, method 3161 for definition).
d. Drain-source heating voltage (VH) - - - - - - 25 V dc, (15 V dc minimum for LCC).
e. Measurement time delay (tMD) - - - - - - - - - 10 to 80
s.
f. Sample window time (tSW) - - - - - - - - - - - 10
s maximum.
MIL-PRF-19500/557F
10
4.5.3 Thermal impedance ( Z
JC measurements). The Z
JC measurements shall be performed in accordance with
MIL-STD-750, method 3161. The maximum limit (not to exceed figure 5, thermal impedance cures and the group A, subgroup 2 limits)
for Z
JC in screening (table IV of MIL-PRF-19500) shall be derived by each vendor by means of statistical process control. When the
process has exhibited control and capability, the capability data shall be used to establish the fixed screening limit. In addition to
screening, once a fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lot to be
plotted on the applicable X, R chart. If a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for
engineering evaluation and disposition. This procedure may be used in lieu of an inline process monitor.
a. Measuring current (IM) - - - - - - - - - - - - 10 mA.
b. Drain heating current (IH) - - - - - - - - - - 1 A minimum , (1.3 A minimum for LCC.).
c. Heating time (tH) - - - - - - - - - - - - - - 10 ms.
d. Drain-source heating voltage (VH) - - - - - - 25 V dc minimum, , (15 V dc minimum for LCC).
e. Measurement time delay (tMD) - - - - - - - - - 30 to 60
s.
f. tSW sample window time - - - - - - - - - - - - 10
s (maximum).
4.5.4 Unclamped inductive switching.
a. Peak current (ID) - - - - - - - - - - - - - - - rated ID1.
b. Peak gate voltage (VGS) - - - - - - - - - - - - 10 V dc.
c. Gate to source resistor (RGS) - - - - - - - - - 25
6
RGS
200
6
.
d. Initial case temperature (TC) - - - - - - - - - +25
(
C +10
(
C, -5
(
C.
e. Inductance (L) - - - - - - - - - - - - - - - - 100
H
10 percent.
f. Number of pulses to be applied - - - - - - - - 1 pulse minimum.
g. Pulse repetition rate - - - - - - - - - - - - None.
4.5.5 Gate stress test.
VGS =
30 V dc minimum.
t = 250
s minimum.
MIL-PRF-19500/557F
11
TABLE I. Group A inspection.
Inspection 1/, 4/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
inspection
Subgroup 2
Thermal impedance 2/
3161
See 4.5.3
Z
JC
1.4
(
C/W
Breakdown voltage,
3407
VGS = 0 V dc; ID = 1.0 mA dc;
V(BR)DSS
drain to source
Bias condition C
2N6796
100
V dc
2N6798
200
V dc
2N6800
400
V dc
2N6802
500
V dc
Gate to source voltage
3403
VDS
VGS;
VGS(th)1
2.0
4.0
V dc
(threshold)
I
D
= 0.25 mA dc
Gate current
3411
Bias condition C; VDS = 0 V dc;
IGSS1
100
nA dc
V
GS = +20 V dc and -20 V dc
Drain current
3413
VGS = 0; bias condition C;
IDSS1
25
A dc
V
DS = 0 V dc; VDS = 80 percent
of rated VDS
Static drain to source
3421
VGS = 10 V dc; condition A;
rDS(on)1
on-state resistance
pulsed (see 4.5.1); ID = ID2
2N6796
0.18
6
2N6798
0.40
6
2N6800
1.00
6
2N6802
1.50
6
Drain to source
3421
VGS = 10 V dc; condition A;
rDS(on)2
on-state resistance
pulsed (see 4.5.1); ID = ID1
2N6796
0.195
6
2N6798
0.420
6
2N6800
1.100
6
2N6802
1.600
6
Forward voltage
4011
Pulsed (see 4.5.1);
VSD
(source drain diode)
V
GS = 0 V dc; IS = ID1
2N6796
1.5
V dc
2N6798
1.4
V dc
2N6800
1.4
V dc
2N6802
1.4
V dc
See footnotes at end of table.
MIL-PRF-19500/557F
12
TABLE I. Group A inspection - Continued.
Inspection 1/, 4/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 3
High temperature
T
C
= TJ = +125
(
C
operation:
Gate current
3411
Bias condition C; VDS = 0 V dc;
IGSS2
200
nA dc
V
GS = +20 V dc and -20 V dc
Drain current
3413
Bias condition C;
IDSS2
.25
mA dc
V
GS = 0 V dc;
V
DS = 80 percent rated VDS
Gate to source voltage
3403
VDS
VGS;
VGS(th)2
1.0
V dc
(threshold)
I
D
= 0.25 mA
Static drain to source
3421
VGS = 10 V dc;
rDS(on)3
on-state resistance
pulsed (see 4.5.1); ID = ID2
2N6796
0.35
ohms
2N6798
0.75
ohms
2N6800
2.40
ohms
2N6802
3.50
ohms
Low temperature
T
C
= TJ = -55
(
C
operation:
Gate to source voltage
3403
VDS
VGS;
VGS(th)3
5.0
V dc
(threshold)
I
D
= 0.25 mA
Subgroup 4
Switching time test
3472
ID = rated ID1 (see 1.3);
V
GS = +10 V dc; RG = 7.5
6
;
Turn-on delay time
t
d(on)
2N6796
V
DD = 30 V dc
30
ns
2N6798
V
DD = 77 V dc
30
ns
2N6800
V
DD = 176 V dc
30
ns
2N6802
V
DD = 225 V dc
30
ns
Rise time
t
r
2N6796
V
DD = 30 V dc
75
ns
2N6798
V
DD = 77 V dc
50
ns
2N6800
V
DD = 176 V dc
35
ns
2N6802
V
DD = 225 V dc
30
ns
See footnotes at end of table.
MIL-PRF-19500/557F
13
TABLE I. Group A inspection - Continued.
Inspection 1/, 4/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 4 - Continued
Turn-off delay time
t
d(off)
2N6796
V
DD = 30 V dc
40
ns
2N6798
V
DD = 77 V dc
50
ns
2N6800
V
DD = 176 V dc
55
ns
2N6802
V
DD = 225 V dc
55
ns
Fall time
t
f
2N6796
V
DD = 30 V dc
45
ns
2N6798
V
DD = 77 V dc
40
ns
2N6800
V
DD = 176 V dc
35
ns
2N6802
V
DD = 225 V dc
30
ns
Subgroup 5
Single pulse unclamped
3470
See 4.5.4
inductive switching 3/
Electrical measurements
See table I, group A,
subgroup 2
Safe operating area test
3474
See figure 6;
V
DS = 80 percent of rated VDS;
V
DS
200 V dc maximum
t
p
= 10 ms
Electrical measurements
See table I, group A, subgroup 2
Subgroup 6
Not applicable
Subgroup 7
Gate charge
3471
Condition B
Test 1
On-state gate charge
Q
g(on)
2N6796
28.51
nC
2N6798
42.07
nC
2N6800
32.97
nC
2N6802
29.53
nC
See footnotes at end of table.
MIL-PRF-19500/557F
14
TABLE I. Group A inspection - Continued.
Inspection 1/, 4/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 7 - Continued
Test 2
Gate to source charge
Q
gs
2N6796
6.34
nC
2N6798
5.29
nC
2N6800
5.75
nC
2N6802
4.46
nC
Test 3
Gate to drain charge
Q
gd
2N6796
16.59
nC
2N6798
28.11
nC
2N6800
16.59
nC
2N6802
28.11
nC
Reverse recovery time
3473
VDD
50 V dc
trr
2N6796
di/dt
100 A/
s;
300
ns
I
F
= 8.0 A
2N6798
di/dt
100 A/
s;
500
ns
I
F
= 5.5 A
2N6800
di/dt
100 A/
s;
700
ns
I
F
= 3.0 A
2N6802
di/dt
100 A/
s;
900
ns
I
F
= 2.5 A
1/ For sampling plan, see MIL-PRF-19500.
2/ This test is required for the following end-point measurements only (not intended for screen 13):
JANS - group B, subgroups 3 and 4
JAN, JANTX and JANTXV - group B, subgroups 2 and 3;
group C, subgroup 6;
group E, subgroup 1
3/ This test is optional if performed as a 100 percent screen.
4/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.
MIL-PRF-19500/557F
15
TABLE II. Group E inspection (all quality levels) for qualification only.
Inspection 1/
MIL-STD-750
Qualification
conformance
Method
Conditions
inspection
Subgroup 1
45 devices, c = 0
Thermal shock
1051
Condition G, 500 cycles
(temperature cycling)
Electrical measurements
See table 1, group A, subgroup 2
Subgroup 2 2/
45 devices, c = 0
Steady-state reverse bias
1042
Condition A; 1,000 hours
Electrical measurements
See table 1, group A, subgroup 2
Steady-state gate bias
1042
Condition B; 1,000 hours
Electrical measurements
See table 1, group A, subgroup 2
Subgroup 3
Not applicable
Subgroup 4
5 devices, c = 0
Thermal resistance
3161
R
JC = 5.0
(
C/W maximum, see 4.5.2
Subgroup 5
Not applicable
1/ JANHC and JANKC devices are qualified in accordance with MIL-PRF-19500.
2/ A separate sample may be pulled for each test.
MIL-PRF-19500/557F
16
FIGURE 5. Normalized transient thermal impedance.
MIL-PRF-19500/557F
17
2N6796, 2N6796U
FIGURE 6. Maximum safe operating area.
MIL-PRF-19500/557F
18
2N6798, 2N6798U
FIGURE 6. Maximum safe operating area - Continued.