MRF5943C
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:DESCRIPTION:
Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and
oscillators.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 40
V
VEBO Emitter-Base Voltage 3.5 V
IC Collector Current 400 mA
PD
Total Device Dissipation
1.0 W
TSTG Storage Temperature -65 to +150 °C
Thermal Data
RTH(J-C) Thermal Resistance, Junction – Case 125 ºC/W
1. Emitter
2. Base
3. Collector
TO-39
Features
• Maximum Available Gain = 17dB @ 300MHz
• High fT – 1.2 GHz typical
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF5943C
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATIC Value
Symbol Test Conditions Min. Typ. Max. Unit
BVCEO IC = 5 ma IB = 0 30 - - V
BVCBO IC = 0.1 mA, IE = 0 40 - - V
BVEBO IE = 0.1 mA, IC = 0 3.5 - - V
ICBO VCB = 15 V, VBE = 0 V - - 50 µA
ICEO VCE = 20 V, VBE = 0 V - - 10 µA
hFE IC = 50 mA, VCE = 15 V 25 - 300
DYNAMIC Value
Symbol Test Conditions Min. Typ. Max. Unit
Ftau Current-Gain Bandwidth Product
(IC = 35 mAdc, VCE = 15 Vdc, f = 100 MHz)
-
1.2
-
GHz
NF IC = 35 mA VCE = 15 V f = 200 MHz
-
5.5
-
dB
GU max IC = 10 mA VCE = 15 V f = 200 MHz
-
12
-
dB
MRF5943C
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
