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Specifications subject to change without notice. 8/02A
GaAs IC SPDT Switch
Non-Reflective DC–18 GHz
Features
■Broadband, DC–18 GHz
■High Isolation, Low Loss, Fast Switching
■100% On-Wafer RF and DC Testing
■100% Visual Inspection to MIL-STD-883
MT 2010
AS018M2-00
Description
The AS018M2-00 GaAs SPDT matched MMIC FET
s witch chip is ideal for applications requiring low loss , high
isolation and/or broadband operation.The GaAs MMIC
emplo ys three shunt and two series FETs per arm f or low
loss, high isolation switching together with a 50 Ωload
which is s witched into the high isolation arm f or low return
loss. Power consumption is ver y low, typically 75 µA at
-5 V.While recommended f or operation up to 18 GHz, the
switch performs well through 22 GHz.
Chip Outline
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
2 GHz 10 GHz 18 GHz 2, 10 and 18 GHz
Parameter1Typ. Typ. Typ. Min. Max. Unit
Inser tion Loss21.5 2.8 2.2 3.0 dB
Isolation 82 57 50 48 dB
Input Return Loss 17 8.5 12.5 7 dB
Output Return Loss 16 10.5 16 9 dB
Electrical Specifications at 25°C
1.All measurements made in a 50 Ωsystem, unless otherwise specified.
2. Insertion loss changes 0.003 dB/°C.
3.Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
Parameter1Condition Frequency Min. Typ. Max. Unit
Switching Characteristics Rise, Fall (10/90% or 90/10% RF) 1 µS
On, Off (50% CTL to 90/10% RF) 1 µS
Video Feedthru320 mV
Input Power for 1 dB Compression 0/-5 V 0.5–18 GHz 24 dBm
0.001 GHz 16 dBm
Intermodulation Intercept Point (IP3) For Two-tone Input Power +13 dBm 0.5–18 GHz 46 dBm
0.001 GHz 35 dBm
Control Voltages VLow = 0 to -0.2 V @ 20 µA Max.
VHigh = -3 V to -6 V @ 250 µA Max.
Operating Characteristics at 25°C