Spansion® Analog and Microcontroller
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There is no change to this document as a result of offering the device as a Spansion product. Any changes that
have been made are the result of normal document improvements and are noted in the document revision
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Spansion continues to support existing part numbers beginning with “MB”. To order these products, please use
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DS04-27300-4Ea
FUJITSU MICROELECTRONICS
DATA SHEET
Copyright©1994-2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved
2006.5
ASSP
BIPOLAR
VOLTAGE DETECTOR
MB3761
■DESCRIPTION
Designed for voltage detector applications, the Fujitsu Microelectronics MB3761 is a dual comparator with a built-
in high precision reference voltage generator. Outputs are open-collector outputs and enable use of the OR-
connection between both channels. Both channels have hysteresis control outputs. Because of a wide power
supply voltage range and a low power supply current, the MB3761 is suitable for power supply monitors and
battery backup systems.
■FEATURES
• Wide power supply voltage range: 2.5 V to 40 V
• Low power and small voltage dependency supply current: 250 µA Typ
• Built-in stable low voltage generator: 1.20 V Typ
• Easy-to-add hysteresis characteristics.
• One type of package (SOP-8pin : 1 type)
■APPLICATIONS
• Industrial Equipment
• Arcade Amusement etc.
MB3761
2
■PIN ASSIGNMENT
B
A
8
7
6
5
1
2
3
4
IN-B
HYS-A
IN-A
OUT-A
VCC
HYS-B
OUT-B
GND
(TOP VIEW)
(FPT-8P-M01)
(+)
(+)
(-)
(-)
MB3761
3
■ABSOLUTE MAXIMUM RATINGS
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■RECOMMENDED OPERATING CONDITIONS
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the de vice’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
representatives beforehand.
Parameter Symbol Rating Unit
Min Max
Power Supply Voltage VCC 41 V
Output Voltage VO41 V
Output Current IO50 mA
Input Voltag e VIN − 0.3 + 6.5 V
Power Dissipation PD350
(TA ≤ +70°C) mW
Storage Temperature TSTG − 55 + 125 °C
Parameter Symbol Value Unit
Min Max
Power Supply Voltage VCC 2.5 40 V
Operating Ambient Temperature TA − 20 + 75 °C
Output Current at pin 4 IO44.5 mA
Output Current at pin 6 IO63.0 mA
MB3761
4
■ELECTRICAL CHARACTERISTICS (TA=+25°C, VCC=5 V)
Parameter Symbol Conditions Value Unit
Min Typ Max
Power Supply Voltage ICCL VCC= 40 V, VIL= 1.0 V - 250 400 µA
ICCH VCC= 40 V, VIH= 1.5 V - 400 600 µA
Threshold Voltage VTH IO = 2 mA, VO= 1 V 1.15 1.20 1.25 V
Deviati on of Thres ho ld
Voltage ∆VTH1 2.5 V ≤ VCC ≤ 5.5 V - 3 12 mV
∆VTH2 4.5 V ≤ VCC ≤ 40 V - 10 40 mV
Offset Voltag e between
Outputs
VOOSA IOA= 4.5 mA, VOA= 2 V,
IHA= 20 µA, VHA= 3 V -2.0- mV
VOSSB IOB= 3 mA, VOB= 2 V,
IHB= 3 mA, VHB= 2 V -2.0- mV
Temperature Coefficient of
Threshold Voltage α-20°C ≤ TA ≤ +70°C-
±0.05 -mV/°C
Difference Voltage on
Threshold Voltage between
Channel ∆VTHAB --10-+10 mV
Input Current IIL VIL= 1.0 V - 5 nA
IIH VIH= 1.5 V - 100 500 nA
Output Leakage Current IOH VO= 40 V, VIL= 1.0 V - - 1 µA
Hysteresis Output Leakage
Current IHLA VCC= 40 V, VHA= 0 V,
VIL= 1.0 V --0.1µA
IHHB VHB= 40 V, VIH= 1.5 V - - 1 µA
Output Sink Current IOLA VO= 1.0 V, VIH= 1.5 V 6 12 - mA
IOLB VO= 1.0 V, VIH= 1.5 V 4 10 - mA
Hysteresis Current IHHA VH= 0 V, VIH= 1.5 V 40 80 - µA
IHLB VH= 1.0 V,VIL= 1.0 V 4 10 - mA
Output Saturation Voltage VOLA IO= 4.5 mA, VIH= 1.5 V - 120 400 mV
VOLB IO= 3.0 mA, VIH= 1.5 V - 120 400 mV
Hysteresis Saturation VHHA IH= 20 µA, VIH= 1.5 V - 50 200 mV
VHLB IH= 3.0 mA, VIL= 1.0 V - 120 400 mV
Output Delay Time tPHL RL= 5 kΩ-2-µs
tPLH RL= 5 kΩ-3-µs
MB3761
5
■EQUIVALENT CIRCUIT
■ OPERATIONAL DEFINITIONS
8
7
5
6
1
3
4
2
HYS-A
OUT-A
IN-A IN-B OUT-B
GND
HYS-B
V CC
V REF
1.2 V
R1
R2
R4
R5
R3
VIN
R6
V H(B)
HYS-B
VO(B)
VO(A)
RLRL
VCC
OUT-B
OUT-A
GND
8
7
6
5
1
2
3
4
VO(A)
VIL(A) VIH(A) VIN
VIN
VIN
VIL(B) VIH(B)
VH(B)
VO(B)
VIH(A) = (1 + )VR
VIL(A) = (1 + )VR − VCC
R1
R2
R1
R3
R1
R2 // R3
VIH(B) = (1 + ) VR
VIL(B) = (1 + ) VR
R5 // R6
R4
R2 // R3 = R2 + R3
R2 R3
R5 // R6 = R5 + R6
R5 R6
R4
R5
VR = VTH (= 1.20 V)
....
Note:
MB3761
6
■TYPICAL PERFORMANCE CHARACTERISTICS
150
120
90
60
30
0010203040
VIH = 1.5 V
Ta=+70˚C
Ta=+25˚C
Ta=-20˚C
500
400
300
200
100
0010203040
VIH = 1.5 V
VIL = 1.0 V
Ta=+70˚C
Ta=-20˚C
Ta=-20˚C
Ta=+70˚C
Ta=+25˚C
Ta=+25˚C
1.0
0.8
0.6
0.4
0.2
00 5 10 15 20 25
Ta=
-20˚C Ta=
+25˚C
VCC = 5 V
VIH = 1.5 V
Ta=
+70˚C
1.22
1.21
1.20
1.19
1.18
1.17 010203040
Ta = +25˚C
Power Supply Voltage VCC (V)Power Supply Voltage VCC (V)
Power Supply Current vs. Power Supply Voltage Hys teres is (A ) Curre nt vs. Power Supp ly Volta ge
Power Supply Current ICC (µA)
Hysteresis (A) Current IHHA (µA)
1.0
0.8
0.6
0.4
0.2
00 5 10 15 20 25
Ta=
+70˚C
Ta=
-20˚C Ta=
+25˚C
VCC = 5 V
VIH = 1.5 V
1.22
1.21
1.20
1.19
1.18
1.17-20 0 +40 +60 +80
V CC = 5 V
+20
Output Saturation (A) Voltage vs.
Output Sink (A) Current Output Saturation (B) Voltage vs.
Output Sink (B) Current
Threshold Voltage vs.
Operating Ambient Temperature
Threshold Voltage vs. Power Supply Voltage
Output Sink (A) Current IOL(A) (mA)
Output Saturation (A) Voltage VOLA (V)
Output Sink (B) Current IOL(B) (mA)
Output Saturation (B) Voltage VOLB (V)
Power Supply Voltage VCC (V)
Threshold Voltage VTH (V)
Operating Ambient Temperature Ta (°C)
Threshold Voltage VTH (V)
MB3761
7
■APPLICATION EXAMPLES
1. Addition of Hysteresis
2. Voltage Detection for Alarm
R1
R2
R3
8
7
6
5
1
2
3
4
VCC (VIN)
VO(A)
GND
RL
R1
R2
R3
8
7
6
5
1
2
3
4
RL
C1
VCC
VH(B)
GND
VO(B)
VO(A)
VIL(A) VIN (VCC)
VIH
VH(B)
VO(B)
VIL(B)
VIH
VIL(A) = (1 + )V R
R3
R2
VIH(A)
VIH(B)
VIH(A) = (1 + )V R
R3
R1 + R2
..
..
VIH(B) = (1 + )V R
R2
R1
..
VIL(B) = (1 + )V R
R2 + R3
R1
..
Note : All calc ulation s occur wit h the output vo ltage
at 0. The hysteresis values are adjusted for
load condition and saturation voltage.
R1
R2
R3
8
7
6
5
1
2
3
4
VCC
VO
GND
RL
R4
VO
VCCL VCCH VCC
R3
R4
VCCL = (1 + )VR
R1
VCCH = (1 + )VR
R2
For hysteres is, a positive feed back from pin 2 or 7 is required. VCCL ≥ 2.5 V
MB3761
8
3. Voltage Detection for Alarm
4. Programmable Zener
R1
R2
R3
8
7
6
5
1
2
3
4
VCC
VO
GND
RL
VO
VCCL VCCH VCC
R1
R2
VCCL = (1 + )VR
R 3
VCCH = (1 + )VR
R4
R4
VCCL ≥ 2.5 V
8
7
6
5
1
2
3
4
V CC
GND
R 1
R 2
R 3
R 2
V Z = (1 + ) V R
R 3
V Z
R 2 + R 3 V CC - V Z
R 1 ≤6 mA
V Z
+
≤
Note : Channel B can be used independently.
MB3761
9
5. Recovery Reset Circuit
8
7
6
5
1
2
3
4
V CC = 5 V
OUT
GND
6.8 kΩR 5
OUT
C 1
0.1 µF
R 3
6.8 kΩ
3.3 kΩ
R 2
R 1 15 kΩ
330 kΩ
R 4
MB3761
10
■TYPICAL CHARACTERISTICS
•Voltage Threshold Levels (VCCL and VCCH) and
Hysteresis Width can be changed by the resistors
(R1 through R4).
•Power-On Reset Time is provided by the following
approximate equation:
•The recommended value of hFE of the exter nal
transistor is from 50 to 200.
•In the case of an instan t power fail,
the remaining charge in C1 effects tRST.
•If necessary, the reversed output is provided
on HYS terminal
6
4
2
00123456
V CC (V)
V O (V)
5
0
4.4
0
V CC (L) V CC (H)
V CC
V O
t RST
≈ 30 ms
V O (V) V CC (V)
DC Characteristics Response Characteristics
VCCL =R3VTH
R1+ R2+ R3
VCCH +R3VTH
R1(R2+ R3
VCCL=)
R4
tRST =-C1R4•In {1 - VTH
VCC (1 + R1
R2+ R3)
{
MB3761
11
■NOTES ON USE
• Take account of common impedance when designing the earth line on a printed wiring board.
• Take measures against static electricity.
- For semiconductors, use antistatic or conductive containers.
- When storing or carrying a printed circuit board after chip mounting, put it in a conductive bag or container.
- The work table, tools and measuring instruments must be grounded.
- The worker must put on a grounding device containing 250 kΩ to 1 MΩ resistors in series.
• Do not apply a negative voltage
- Applying a negative v oltage of −0.3 V or less to an LSI may generate a parasitic transistor, resulting in
malfunction.
■ORDERING INFORMATION
■RoHS Compliance Information of Lead (Pb) Free version
The LS I products of Fujits u Microele ctronic s with “E1 ” are com pliant wit h RoHS Dir ective , and has o bser ved
the standard of lead, cadmium, mercury, Hexav alent chromium, polybrominated biphenyls (PBB) , and polybro-
minated diphenyl ethers (PBDE) .
The product that conforms to this standard is added “E1” at the end of the part number.
■MARKING FORMAT (Lead Free version)
Part number Package Remarks
MB3761PF-❏❏❏ 8-pin plastic SOP
(FPT-8P-M01) Conventional version
MB3761PF-❏❏❏E1 8-pin plastic SOP
(FPT-8P-M01) Lead Free version
INDEX
3761
E1XXXX
XXX
Lead Free version
MB3761
12
■LABELING SAMPLE (Lead free version)
2006/03/01
ASSEMBLED IN JAPAN
G
QC PASS
(3N) 1MB123456P-789-GE1
1000
(3N)2 1561190005 107210
1,000
PCS
0605 - Z01A
1000
1/1
1561190005
MB123456P - 789 - GE1
MB123456P - 789 - GE1
MB123456P - 789 - GE1
Pb
Lead Free version
Lead free mark
JEITA logo JEDEC logo
MB3761
13
■MB3761PF-❏❏❏E1 RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY LEVEL
[Temperature Profile for FJ Standard IR Reflow]
(1) IR (infrared reflow)
(2) Manual soldering (partial heating method)
Conditions : Temperature 400 °C Max
Times : 5 s ma x/pin
Item Condition
Mounting Method IR (infrared reflow) , Manual soldering (partial heating method)
Mounting tim es 2 times
Storage period
Before opening Please use it within two years after
Manufacture.
From opening to the 2nd
reflow Less than 8 days
When the storage period after
opening was exceeded Please processes within 8 days
after baking (125 °C, 24H)
Storage conditions 5 °C to 30 °C, 70%RH or less (the lowest possible humidity)
260 °C
(e)
(d')
(d)
255 °C
170 °C
190 °C
RT (b)
(a)
(c)
~
Note : Temperature : the top of the package body
(a) Te mperat ure Inc rease gr adient : Averag e 1 °C/s to 4 °C/s
(b) Preliminary heating : Temperature 170 °C to 190 °C, 60s to 180s
(c) Tem per ature Incre ase grad ient : Average 1 °C/s to 4 °C/s
(d) Actual heating : Temperature 260 °C Max; 255 °C or more, 10s or less
(d’) : Temperature 230 °C or more, 40s or less
or
Temperature 225 °C or more, 60s or less
or
Temperature 220 °C or more, 80s or less
(e) Cooling : Natural cooling or forced cooling
H rank : 260 °C Max
MB3761
14
■PACKAGE DIMENSION
8-pin plastic SOP Lead pitch 1.27 mm
Package width
×
package length
5.3 × 6.35 mm
Lead shape Gullwing
Sealing method Plastic mold
Mounting height 2.25 mm MAX
Weight 0.10 g
Code
(Reference) P-SOP8-5.3×6.35-1.27
8-pin plastic SOP
(FPT-8P-M01)
(FPT-8P-M01)
C
2002 FUJITSU LIMITED F08002S-c-6-7
0.13(.005) M
Details of "A" part
7.80±0.405.30±0.30
(.209±.012) (.307±.016)
.250 –.008
+.010
–0.20
+0.25
6.35
INDEX
1.27(.050)
0.10(.004)
14
58
0.47±0.08
(.019±.003)
–0.04
+0.03
0.17
.007 +.001
–.002
"A" 0.25(.010)
(Stand off)
0~8˚
(Mounting height)
2.00 +0.25
–0.15
.079 +.010
–.006
0.50±0.20
(.020±.008)
0.60±0.15
(.024±.006)
0.10 +0.10
–0.05
–.002
+.004
.004
*1
0.10(.004)
*2
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
Note 1) *1 : These dimensions include resin protrusion.
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
MB3761
15
MEMO
FUJITSU MICROELECTRONICS LIMITED
Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,
Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387
http://jp.fujitsu.com/fml/en/
For further information please contact:
North and South America
FUJITSU MICROELECTRONICS AMERICA, INC.
1250 E. Arques Avenue, M/S 333
Sunnyvale, CA 94085-5401, U.S.A.
Tel: +1-408-737-5600 Fax: +1-408-737-5999
http://www.fma.fujitsu.com/
Europe
FUJITSU MICROELECTRONICS EUROPE GmbH
Pittlerstrasse 47, 63225 Langen,
Germany
Tel: +49-6103-690-0 Fax: +49-6103-690-122
http://emea.fujitsu.com/microelectronics/
Korea
FUJITSU MICROELECTRONICS KOREA LTD.
206 KOSMO TOWER, 1002 Daechi-Dong,
Kangnam-Gu,Seoul 135-280
Korea
Tel: +82-2-3484-7100 Fax: +82-2-3484-7111
http://www.fmk.fujitsu.com/
Asia Pacific
FUJITSU MICROELECTRONICS ASIA PTE LTD.
151 Lorong Chuan, #05-08 New Tech Park,
Singapore 556741
Tel: +65-6281-0770 Fax: +65-6281-0220
http://www.fujitsu.com/sg/services/micro/semiconductor/
FUJITSU MICROELECTRONICS SHANGHAI CO., LTD.
Rm.3102, Bund Center, No.222 Yan An Road(E),
Shanghai 200002, China
Tel: +86-21-6335-1560 Fax: +86-21-6335-1605
http://cn.fujitsu.com/fmc/
FUJITSU MICROELECTRONICS PACIFIC ASIA LTD.
10/F., World Commerce Centre, 11 Canton Road
Tsimshatsui, Kowloon
Hong Kong
Tel: +852-2377-0226 Fax: +852-2376-3269
http://cn.fujitsu.com/fmc/tw
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose
of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS
does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporat-
ing the device based on such information, you must assume any responsibility arising out of such use of the information.
FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use
or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS
or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or
other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual
property rights or other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured
as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect
to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in
nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in
weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising
in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current
levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of
the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
Edited Strategic Business Development Dept.
