This document is a general product description and is subject t o change without notice. Hynix Semiconductor do es not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 1.0 / May 2007 1
512Mb DDR SDRAM
HY5DU12822D(L)TP
HY5DU121622D(L)TP
Rev. 1.0 / May 2007 2
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
Revision History
Revision No. History Draft Date Remark
0.1 First version for internal review Jan. 2007
1.0 Final Version Release May 2007
Rev. 1.0 / May 2007 3
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
DESCRIPTION
The HY5DU12822D(L)T(P) and HY5DU121622D(L)T(P) are a 536,870,912-bit CMOS Double Data Rate(DDR) Synchro-
nous DRAM, ideally suited for the main memory applications which requires large memory densit y and high bandwidth.
This Hynix 512Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the
clock. While all addresses and contro l inputs ar e latched on th e rising edges of the CK (falling edg es of the /CK), Data,
Data strobes and W rite data mas ks inputs ar e samp led on both rising and falling edges of it. The data paths are inter-
nally pipelined and 2-bit prefetched to achiev e very high bandwid t h. All input and output v o lta ge levels are compatible
with SSTL_2.
FEATURES
•V
DD
, V
DDQ
= 2.3V
min
~ 2.7V
max
(Typical 2.5V Operation +/- 0.2V for DDR266, 333)
•V
DD
, V
DDQ
= 2.4V
min
~ 2.7V
max
(Typical 2.6V Operation +0.1/- 0.2V for DDR400
product )
• All inputs and outputs are compatible with SSTL_2
interface
• Fully differential clock inputs (CK, /CK) operation
• Double data rate interface
• Source synchronous - data transaction aligned to
bidirectional data strobe (DQS)
• x16 device has two bytewide data strobes (UDQS,
LDQS) per each x8 I/O
• Data outputs on DQS edges when read (edged DQ)
Data inputs on DQS centers when write (centered
DQ)
• On chip DLL align DQ and DQS transition with CK
transition
• DM mask write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data, data
strobes and data masks latched on the rising edges
of the clock
• Programmable CAS latency 2/2.5 (DDR266, 333)
and 3 (DDR400 product) supported
• Programmable burst length 2/4/8 with both sequen-
tial and interleave mode
• Internal four bank operations with single pulsed
/RAS
• Auto refresh and self refresh supported
•t
RAS
lock out function supported
•8192 refresh cycles/64ms
• JEDEC standard 400mil 66pin TSOP-II with 0.65mm
pin pitch
• Lead free (*ROHS Compliant)
OPERATING FREQUENCY
Grade Clock Rate Remark
-D43 200MHz@CL3 DDR400B (3-3-3)
- J 133MHz@CL2 166MHz @CL2.5
& @CL3 DDR333 (2.5-3-3)
DDR333 (3-3-3)
- K 133MHz@CL2 133MHz@CL2.5 DDR266A (2-3-3)
- H 100MHz@CL2 133MHz@CL2.5 DDR266B (2.5-3-3)
- L 100MHz@CL2 DDR200 (2-2-2)
ORDERING INFORMATION
*X means speed grade
*ROHS (Restriction Of Hazardous Substance)
Part No. Configuration Package
HY5DU12822D(L)T(P)-X* 64M x 8 400mil
66pin
TSOP-II
(Lead free)
HY5DU121622D(L)T(P)-X* 32M x 16
Rev. 1.0 / May 2007 4
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
PIN CONFIGURATION
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDDQ
LDQS
NC
VDD
NC
LDM
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
NC
VSSQ
UDQS
NC
VREF
VSS
UDM
/CK
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
VDD
DQ0
VDDQ
NC
DQ1
VSSQ
NC
DQ2
VDDQ
NC
DQ3
VSSQ
NC
NC
VDDQ
NC
NC
VDD
NC
NC
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
VSS
DQ7
VSSQ
NC
DQ6
VDDQ
NC
DQ5
VSSQ
NC
DQ4
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM
/CK
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
x16 x8x8 x16
400mil X 875mil
66pin TSOP -II
0.65mm pin pitch
(Lead free)
ROW AND COLUMN ADDRESS TABLE
ITEMS 64Mx8 32Mx16
Organization 16M x 8 x 4banks 8M x 16 x 4banks
Row Address A0 - A12 A0 - A12
Column Address A0-A9, A11 A0-A9
Bank Address BA0, BA1 BA0, BA1
Auto Precharge Flag A10 A10
Refresh 8K 8K
Rev. 1.0 / May 2007 5
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
PIN DESCRIPTION
PIN TYPE DESCRIPTION
CK, /CK Input
Clock: CK and /CK are differential clock inputs. All address and control input
signals are sampled on the crossing of the positive edge of CK and negative
edge of /CK. Output (read) data is referenced to the crossings of CK and /CK
(both directions of crossing).
CKE Input
Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock sig-
nals, and device input buffers and output drivers. Taking CKE LOW provides
PRECHARGE POWER DOWN and SELF REFRESH operation (all banks idle), or
ACTIVE POWER DOWN (row ACTIVE in any bank). CKE is synchronous for
POWER DOWN entry and exit, and for SELF REFRESH entry. CKE is asynchro-
nous for SELF REFRESH exit, and for output disable. CKE must be maintained
high throughout READ and WRITE accesses. Input buffers, excluding CK, /CK
and CKE are disabled during POWER DOWN. Input buffer s, ex cluding CKE are
disabled during SELF REFRESH. CKE is an SSTL_2 input, but will detect an LV C-
MOS LOW level after VDD is applied.
/CS Input
Chip Select: Enables or disables all inputs except CK, /CK, CKE, DQS and DM.
All commands are mask ed when CS is regi stered high. CS pro vides f or external
bank selection on systems with multiple banks. CS is considered part of the
command code.
BA0, BA1 Input Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, Read,
Write or PRECHARGE command is being applied.
A0 ~ A12 Input
Address Inputs: Provide the row address for ACTIVE commands, and the col-
umn address and A UT O PRECHARGE bit f or READ /WRITE commands, to select
one location out of the memory array in the respective bank. A10 is sampled
during a Precharge command to determine whether the PRECHARGE applies to
one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be pre-
charged, the bank is selected by BA0, BA1. The address inputs also provide the
op code during a MODE REGISTER SET command. BA0 and BA1 define which
mode register is loaded during the MODE REGISTER SET command (MRS or
EMRS).
/RAS, /CAS, /
WE Input Command Inputs: /RAS, /CAS and /WE (along with /CS) define the command
being entered.
DM
(LDM,UDM) Input
Input Data Mask: DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH along with that input data during a WRITE
access. DM is sampled on both edge s of DQS . Although DM pins are input only,
the DM loading matches the DQ and DQS loading. For the x16, LDM corre-
sponds to the data on DQ0-Q7; UDM corresponds to the data on DQ8-Q15.
DQS
(LDQS,UDQS) I/O
Data Strobe: Output with read data, input with write data. Edge aligned with
read data, centered in write data. Used to capture write data. For the x16,
LDQS corresponds to the data on DQ0-Q7; UDQS corresponds to the data on
DQ8-Q15.
DQ I/O Data input / output pin: Data bus
VDD/VSS Supply Power supply for internal circuits and input buffers.
VDDQ/VSSQ Supply Power supply for output buffers for noise immunity.
VREF Supply Reference voltage for inputs for SSTL interface.
NC NC No connection.
Rev. 1.0 / May 2007 6
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
FUNCTIONAL BLOCK DIAGRAM (64Mx8)
4Banks x 16Mbit x 8 I/O Double Data Rate Synchronous DRAM
Sense AMPSense AMP
Sense AMP
Mode
Register
Command
Decoder
CLK
/CLK
CKE
/CS
/RAS
/CAS
/WE
DM
Bank
Control
Mode
Register Row
Decoder
16Mx8 BANK 0
16Mx8 BANK 1
16Mx8 BANK 2
16Mx8 BANK 3
Memory
Cell
Array
Sense AMP
Column
Decoder
Address
Buffer
A0
A1
A
max
BA0
BA1
Column Address
Counter
8
Output Buffer
DQ0
DQ7
Input Buffer
DS
16
2-bit Prefetch Unit
Write Data Register
2-bit Prefetch Unit 8
16
Data Strobe
Transmitter
Data Strobe
Receiver
DQS
DS
DLL
Block
CLK,
/CLK
CLK_DLL
Mode
Register
Rev. 1.0 / May 2007 7
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
FUNCTIONAL BLOCK DIAGRAM (32Mx16)
4Banks x 8Mbit x 16 I/O Double Data Rate Synchronous DRAM
Sense AM PSense AMP
Sense AMP
Mode
Register
Command
Decoder
CLK
/CLK
CKE
/CS
/RAS
/CAS
/WE
UDQM
Bank
Control
Mode
Register Row
Decoder
8Mx16 BANK 0
8Mx16 BANK 1
8Mx16 BANK 2
8Mx16 BANK 3
Memory
Cell
Array
Sense AMP
Column
Decoder
Address
Buffer
A0
A1
A
max
BA0
BA1
Column Address
Counter
16
Output Buffer
DQ0
DQ15
Input Buffer
DS
32
2-bit Prefetch Unit
Write Data Register
2-bit Prefetch Unit 16
32
Data Strobe
Transmitter
Data Strobe
Receiver
UDQS,
LDQS
UDQS,
LDQS
DLL
Block
CLK,
/CLK
CLK_DLL
Mode
Register
LDQM
Rev. 1.0 / May 2007 8
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
SIMPLIFIED COMMAND TRUTH TABLE
Command CKEn-1 CKEn CS RAS CAS WE ADDR A10
/AP BA Note
Extended Mode Register
Set H XLLLL OP code 1,2
Mode Register Set H XLLLL OP code 1,2
Device Deselect HX
HXXX X1
No Operation LHHH
Bank Active H X L L H H RA V 1
Read H X LHLHCALV1
Read with Autoprecharge H 1,3
Write HXLHLLCA
LV1
Write with Autoprecharge H 1,4
Precharge All Banks HXLLHLX
HX1,5
Precharge selected Bank LV1
Read Burst Stop H X L H H L X 1
Auto Refresh H HLLLH X 1
Self Refresh
EntryH LLLLH
X
1
Exit L H HXXX 1
LHHH
Precharge
Power Down
Mode
Entry H L HXXX
X
1
LHHH 1
Exit L H HXXX 1
LHHH 1
Active Power
Down Mode Entry H L HXXX
X
1
LVVV 1
Exit L H X 1
( H=Logic High Level, L=Logic Low Level, X=Don’t Care, V=V alid Data Input, OP Code=Operand Code, NOP=No Operation )
Rev. 1.0 / May 2007 9
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
WRITE MASK TRUTH TABLE
Function CKEn-1 CKEn /CS, /RAS,
/CAS, /WE DM ADDR A10/
AP BA Note
Data Write H X X L X 1,2
Data-In Mask H X X H X 1,2
Note :
1. Write Mask command masks burst write data with reference to LDQS/UDQS(Data Strobes) and it is not rel a ted with read data.
In case of x16 data I/O, LDM and UDM control lower byte(DQ0~7) and Upper byte(DQ8~15) respectively.
2. In here, Don’t Care means logical value only, it doesn’t mean ’Don’t care for DC level of each signals’. DC level should be out of
VIHmin ~ VILmax
Note :
1. UDM, LDM states are Don’t Care. Refer to below Write Mask Truth Table.(note 6 )
2. OP Code(Operand Code) consists of A0~A12 and BA0~BA1 used for Mode Register setti ng during Extended MRS or MRS. Before
entering Mode R egi ster Set mode, a ll banks must be in a pr echarg e state and MR S co mmand can be i ssued aft er tRP peri od fr om
Prechagre command.
3. If a Read with Auto-precharge command is detected by memory component in CK(n), then there will be no command presented
to activate bank until CK(n+BL/2+tRP).
4. If a Write with Auto-precharge command is detected by memory component in CK(n), then there will be no command presented
to activate bank until CK(n+BL/2+1+tDPL+t RP). Last Data-In to Prechage delay(tDPL) which is also ca lled Write Recovery
Time(tWR) is neede d to guarantee that the last data have been comp letely written.
5. If A10/AP is High when Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be precharged.
6. In here, Don’t Care means logical value only, it doesn’t mean ’Don’t care for DC level of each signals’. DC level should be out of
VIHmin ~ VILmax
Rev. 1.0 / May 2007 10
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
SIMPLIFIED STATE DIAGRAM
IDLE
BANK
ACTIVE
SELF
REFRESH
Mode
REGISTER
SET
IDLE
POWER
DOWN ACTIVE
POWER
DOWN
AUTO
REFRESH
WRITE
WITH
AUTOPRE
CHARGE
READ
WITH
AUTOPRE
CHARGE
BANK
ACTIVE
POWER-UP
POWER APPLIED
WRITE READ
(E)MRS SREF
SREX
AREF
CLE HIGH
CKE LOW
ACTIVE
CLE HIGH
CKE LOW
Write
READ
READAP
WRITEAP
PRE(PALL)
WRITEAP
WRITEAP
WRITE
READ
PRE(PALL) PRE(PALL)
Command Input
Automatic Sequence
Rev. 1.0 / May 2007 11
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
POWER-UP SEQUENCE AND DEVICE INITIALIZATION
DDR SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those
specified may result in undefined operation. Power must first be applied to VDD, then to VDDQ, and finally to VREF
(and to the system VTT). VTT must be applied after VDDQ to avo id device latch-up, which may cause pe rmanent dam-
age to the device. VREF can be applied anytime after VDDQ, but is expected to be nominally coincident with VTT.
Except for CKE, inputs are not recognized as v alid until after VREF is applied. CKE is an SSTL_2 input, but will detect an
LVCMOS LOW level after VDD is applied. Maintaining an LVCMOS LOW level on CKE during power-up is required to
guarantee that the DQ and DQS outputs will be in the High-Z state, where they will remain until driven in normal oper-
ation (by a read access). After all power supply and reference voltages are stable, and the clock is stable, the DDR
SDRAM requires a 200us delay prior to applying an executable command.
Once the 200us delay has been satisfied, a DESELECT or NOP command should be applied, and CKE should be
brought HIGH. Following the NOP command, a PRECHARGE ALL command should be applied. Next a EXTENDED
MODE REGISTER SET command should be issued for the Extended Mode Register, to enable the DLL, then a MODE
REGISTER SET command should be issued for the Mode Register, to reset the DLL, and to program the operating
parameters. After the DLL reset, tXSRD(DLL locking time) should be satisfied for read command. After the Mode Reg-
ister set command, a PRECHARGE ALL command should be applied, placing the device in the all banks idle state.
Once in the idle state, two AUTO REFRESH cycles must be performed. Additionally, a MODE REGISTER SET command
for the Mode Register, with the reset DLL bit deactivated low (i.e. to program operating parameters without resetting
the DLL) must be performed. Following these cycles, the DDR SDRAM is ready for normal operation.
1. Apply power - VDD, VDDQ, VTT, VREF in the following power up sequencing and attempt to maintain CKE at LVC-
MOS low state. (All the other input pins may be undefined.)
• VDD and VDDQ are driven from a single power converter output.
• VTT is limited to 1.44V (reflecting VDDQ(max)/2 + 50mV VREF variation + 40mV VTT variation.
• VREF tracks VDDQ/2.
• A minimum resistance of 42 Ohms (22 ohm serie s res istor + 22 ohm parallel resistor - 5% tolerance) limits the
input current from the VTT supply into any pin.
• If the above criteria cannot be met by the system design, then the following sequencing and voltage relation-
ship must be adhered to during power up.
2. Start clock and maintain stable clock for a minimum of 200usec.
3. After stable power and clock, apply NOP condition and take CKE high.
4. Issue Extended Mode Register Set (EMRS) to enable DLL.
5. Issue Mode Register Set (MRS) to reset DLL and set device to idle state with bit A8=high. (An additional 200
cycles(tXSRD) of clock are required for locking DLL)
6. Issue Precharge commands for all banks of the device.
7. Issue 2 or more Auto Refresh commands.
8. Issue a Mode Register Set command to initialize the mode register with bit A8 = Low
Voltage description Sequencing Voltage relationship to avoid latch-up
VDDQ After or with VDD < VDD + 0.3V
VTT After or with VDDQ < VDDQ + 0.3V
VREF After or with VDDQ < VDDQ + 0.3V
Rev. 1.0 / May 2007 12
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
Power-Up Sequence
CODECODE CODE CODECODE
CODECODE CODE CODECODE
CODE CODECODECODECODE
NOP PRE MRSEMRS PRENOP MRSAREF ACT RD
VDD
VDDQ
VTT
VREF
/CLK
CLK
CKE
CMD
DM
ADDR
A10
BA0, BA1
DQS
DQ'S
LVCMOS Low Lev e l
tIS tIH
tVTD
T=200usec tRP tMRD tRP tRFC tMRD
tXSRD*
READ
Non-Read
Command
Power UP
VDD and C K stable Precharge All EMRS Set MRS Set
Reset DLL
(wit h A 8=H)
Precharge All 2 or more
Auto Refresh
MRS Set
(with A8=L)
* 200 cycle(tXSRD) of CK are required (for DLL locking) before Read Command
tMRD
Rev. 1.0 / May 2007 13
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
MODE REGISTER SET (MRS)
The mode register is used to store the v a rious ope rating modes such as /CAS latency, addressing mode, burst length,
burst type, test mode, DLL reset. The mode register is prog ramed via MRS command. This command is issued by the
low signals of /RAS, /CAS, /CS, /WE and BA0. This command can be issued only when all banks are in idle state and
CKE must be high at lea st one cycle bef ore the Mode R egiste r Set Command can be issued. Two cycles are required to
write the data in mode register. During the MRS cycle, any command cannot be issued. Once mode register field is
determined, the information will be held until reset by another MRS command.
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0 0 Operating Mode CAS Latency B T Burst Length
BA0 MRS Type
0MRS
1EMRS
A12~A9 A8 A7 A6~A0 Operating Mode
0 0 0 Valid Normal Operation
0 1 0 Valid Normal Operation/ Reset DLL
0 0 1 VS Vendor specific Test Mode
- - - - All other states reserved
A6 A5 A4 CAS Latency
000 Reserved
001 Reserved
010 2
011 3
100 Reserved
101 1.5
110 2.5
111 Reserved
A3 Burst Type
0Sequential
1Interleave
A2 A1 A0 Burst Length
Sequential Interleave
0 0 0 Reserved Reserved
001 2 2
010 4 4
011 8 8
1 0 0 Reserved Reserved
1 0 1 Reserved Reserved
1 1 0 Reserved Reserved
1 1 1 Reserved Reserved
Rev. 1.0 / May 2007 14
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
BURST DEFINITION
BURST LENGTH & TYPE
Read and write accesses to th e DDR SD RAM are bu rst orien ted, wi th the burst length being programmable. The burst
length determines the maximum number of column locations that can be accessed for a given Read or Write com-
mand. Burst lengths of 2, 4 or 8 locations are available for both the sequential and the interleaved burst types.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
When a Read or Write command is issued, a block of columns equal to the burst length is effectively selected. All
accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary is
reached. The block is uniquely selected by A1-Ai when the burst length is set to two, by A2 -Ai when the burst length
is set to four and by A3 -Ai when the burst length is set to eight (where Ai is the most significant column address bit
for a given configuration). The remaining (least significant) address bit(s) is (are) used to sel ect the starting location
within the block. The programmed burst length applies to both Read and Write bursts.
Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the
burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the
burst type and the starting column address, as shown in Burst Definition Table
Burst Length Starting Address
(A2,A1,A0) Sequential Interleave
2XX0 0, 1 0, 1
XX1 1, 0 1, 0
4
X00 0, 1, 2, 3 0, 1, 2, 3
X01 1, 2, 3, 0 1, 0, 3, 2
X10 2, 3, 0, 1 2, 3, 0, 1
X11 3, 0, 1, 2 3, 2, 1, 0
8
000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7
001 1, 2, 3, 4, 5, 6, 7, 0 1, 0, 3, 2, 5, 4, 7, 6
010 2, 3, 4, 5, 6, 7, 0, 1 2, 3, 0, 1, 6, 7, 4, 5
011 3, 4, 5, 6, 7, 0, 1, 2 3, 2, 1, 0, 7, 6, 5, 4
100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3
101 5, 6, 7, 0, 1, 2, 3, 4 5, 4, 7, 6, 1, 0, 3, 2
110 6, 7, 0, 1, 2, 3, 4, 5 6, 7, 4, 5, 2, 3, 0, 1
111 7, 0, 1, 2, 3, 4, 5, 6 7, 6, 5, 4, 3, 2, 1, 0
Rev. 1.0 / May 2007 15
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
CAS LATENCY
The Read latency or CAS latency is the delay in clock cycles between the registration of a Read command and the
availability of the first burst of output data. The latency can be programmed 2 or 2.5 clocks for DDR266/333 or 3
clocks for DDR400 product.
If a Read comma nd is registered at clock ed ge n, and the latency is m clocks, the data is av aila ble nominally coinciden t
with clock edge n + m.
Reserved states should not be used as unknown operation or incompatibility with future versions may resu lt.
DLL RESET
The DLL must be enabled f or normal oper ation. DLL enable is requ ired during pow er up init ializa tion, an d upon re turn-
ing to normal operation after having disabled the DLL fo r the purpose of debug or evaluation. The DLL is automatically
disabled when entering self refresh operation and is automatically re-enabled upon exit of self refresh operation. Any
time the DLL is enabled, 200 clock cycles must occur to allow time for the internal clock to lock to the externally
applied clock before an any command can be issued.
OUTPUT DRIVER IMPEDANCE CONTROL
The normal drive strength for all outputs is specified to be SSTL_2, Class II. Hynix also supports a half strength driver
option, intended for lighter load and/or point-to-point environments. Selection of the half strength driver option will
reduce the output drive strength by 50% of that of the full strength driver. I-V curves for both the full strength driver
and the half strength driver are included in this document.
Rev. 1.0 / May 2007 16
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
EXTENDED MODE REGISTER SET (EMRS)
The Extended Mode Register controls functions beyond those controlled by the Mode Register; these additional func-
tions include DLL enable/disable, output driver strength se lection(optional). These functions are controlled via the bits
shown below. The Extended Mode Register is programmed via the Mode Register Set command (BA0=1 and BA1=0)
and will retain the stored information until it is programmed again or the device loses power.
The Extended Mode Register mus t be loaded when all banks are idle and no bursts are in progress, and the controller
must wait the specified time before initiating any subsequent operation. Violating either of these requirements will result
in unspecified operation.
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0 1 Operating Mode 0* DS DLL
BA0 MRS Type
0MRS
1EMRS
An~A3 A2~A0 Operating Mode
0 Valid Normal Operation
_ _ All other states reserved
A0 DLL enable
0Enable
1 Disable
A1 Output Driver
Impedance Control
0 Full Strength Driver
1Half Strength Driver
* This part do not support/QFC function, A2 must be programmed to Zero.
Rev. 1.0 / May 2007 17
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
ABSOLUTE MAXIMUM RATINGS
Note: Operation at above absolute maximum rating can adversely affect device reliabili ty
DC OPERATING CONDITIONS (TA=0 to 70 oC, Vo ltage referenced to VSS = 0V)
Note:
1. V
DDQ
must not exceed the level of VDD.
2. V
IL
(min) is acceptable -1.5V AC pulse widt h with < 5ns of duration.
3. V
REF
is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same.
Peak to peak noise on V
REF
may not exceed ±2% of the DC value.
4. V
ID
is the magnitude of the difference between th e inpu t level on CK and the input level on /CK.
Parameter Symbol Rating Unit
Operating Temperature (Ambient) T
A
0 ~ 70 oC
Storage Temperature T
STG
-55 ~ 150 oC
Voltage on V
DD
relative to V
SS
V
DD
-1.0 ~ 3.6 V
Voltage on V
DDQ
relative to V
SS
V
DDQ
-1.0 ~ 3.6 V
Voltage on inputs relative to V
SS
V
INPUT
-1.0 ~ 3.6 V
Voltage on I/O pins relative to V
SS
V
IO
-0.5 ~3.6 V
Output Short Circuit Current I
OS
50 mA
Soldering Temperature ⋅ Time T
SOLDER
260 ⋅ 10 oC ⋅ Sec
Parameter Symbol Min Typ. Max Unit
Power Supply Voltage (DDR200, 266, 333) V
DD
2.3 2.5 2.7 V
Power Supply Voltage (DDR200, 266, 333)1V
DDQ
2.3 2.5 2.7 V
Power Supply Voltage (DDR400 product) V
DD
2.4 2.6 2.7 V
Power Supply Voltage (DDR400 product)1V
DDQ
2.4 2.6 2.7 V
Input High Voltage V
IH
V
REF
+ 0.15 - V
DDQ
+ 0.3 V
Input Low Voltage2V
IL
-0.3 - V
REF
- 0.15 V
Termination Voltage V
TT
V
REF
- 0.04 V
REF
V
REF
+ 0.04 V
Reference Volta ge3V
REF
0.49*VDDQ 0.5*VDDQ 0.51*VDDQ V
Input Voltage Level, CK and CK inputs V
IN
(DC) -0.3 - VDDQ+0.3 V
Input Differential Voltage, CK and CK inputs4V
ID
(DC) 0.36 - VDDQ+0.6 V
V-I Matching: Pullup to Pulldown Current Ratio5V
I
(RATIO) 0.71 - 1.4 -
Input Leakage Current6I
LI
-2 - 2 uA
Output Leakage Current7I
LO
-5 - 5 uA
Normal Strength
Output Driver
(V
OUT
=V
TT
±
0.84)
Output High Current
(min V
DDQ
, min V
REF
, min
V
TT
)I
OH
-16.8 - - mA
Output Low Current
(min V
DDQ
, max V
REF
, max
V
TT
)I
OL
16.8 - - mA
Half Strength
Output Driver
(V
OUT
=V
TT
±
0.68)
Output High Current
(min V
DDQ
, min V
REF
, min
V
TT
)I
OH
-13.6 - - mA
Output Low Current
(min V
DDQ
, max V
REF
, max
V
TT
)I
OL
13.6 - - mA
Rev. 1.0 / May 2007 18
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temper-
ature and voltage r ange, f or devi ce dr ain to source v oltages from 0.25V to 1.0V. For a giv en ou tput, it re prese nts t he max imum dif-
ference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum
pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
6. V
IN
=0 to V
DD
, All other pins are not tested under V
IN
=0V.
7. DQs are disabled, V
OUT
=0 to V
DDQ
IDD SPECIFICATION AND CONDITIONS (TA=0 to 70 oC, Vo ltage referenced to VSS = 0V)
Test Conditions
Test Condition Symbol
Operating Current:
One bank; Active - Precharge; t
RC
=t
RC
(min); t
CK
=t
CK
(min); DQ,DM and DQS inputs changing twice
per clock cycle; address and control inputs changing once per clock cycle I
DD0
Operating Current:
One bank; Active - Read - Precharge;
Burst Length=2; t
RC
=t
RC
(min); t
CK
=t
CK
(min); address and control inputs changing once per clock
cycle
I
DD1
Precharge Power Down Standby Current:
All banks idle; Power down mode; CKE=Low, t
CK
=t
CK
(min) I
DD2P
Idle Standby Current:
/CS=High, All banks idle; t
CK
=t
CK
(min);
CKE=High; address and control inputs changing once per clock cycle.
V
IN
=V
REF
for DQ, DQS and DM
I
DD2F
Idle Quiet Standby Current:
/CS>=Vih(min); All banks idle; CKE>=Vih(min); Addresses and other control inputs stable, Vin=Vref
for DQ, DQS and DM I
DD2Q
Active Power Down Standby Current:
One bank active; Power down mode; CKE=Low, t
CK
=t
CK
(min) I
DD3P
Active Standby Current:
/CS=HIGH; CKE=HIGH; One bank; Active-Precharge; t
RC
=t
RAS
(max); t
CK
=t
CK
(min);
DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing
once per clock cycle
I
DD3N
Operating Current:
Burst=2; Reads; Continuous burst; One bank active; Address and control inputs changing once per
clock cycle; t
CK
=t
CK
(min); I
OUT
=0mA I
DD4R
Operating Current:
Burst=2; Writes; Continuous burst; One bank active; Address and control inputs changing once per
clock cycle; t
CK
=t
CK
(min); DQ, DM and DQS inputs changing twice per clock cycle I
DD4W
Auto Refresh Current:
t
RC
=t
RFC
(min) - 8*t
CK
for DDR200 at 100Mhz, 10*t
CK
for DDR266A & DDR266B at 133Mhz;
distributed refresh
t
RC
=t
RFC
(min) - 14*t
CK
for DDR400 at 200Mhz
I
DD5
Self Refresh Current:
CKE =< 0.2V; External clock on; t
CK
=t
CK
(min) I
DD6
Operating Current - Four Bank Operation:
Four bank interleaving with BL=4, Refer to the following page for detailed test condition I
DD7
Rev. 1.0 / May 2007 19
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
DETAILED TEST CONDITIONS FOR DDR SDRAM IDD1 & IDD7
IDD1: Operating current: One bank operation
1. Typical Case: VDD = 2.5V, T=25 oC for DDR200, 266, 333; VDD = 2.6V, T=25 oC for DDR400
2. Worst Case: VDD = 2.7V, T= 0 oC
3. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are
changing once per clock cycle. lout = 0mA
4. Ti ming patterns
- DDR200(100Mhz, CL=2): tCK = 10ns, CL2, BL=2, tRCD = 2*tCK, tRC = 10*tCK, tRAS = 5*tCK
Read: A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing
50% of data changing at every burst
- DDR266B(133Mhz, CL=2.5): tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read: A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
50% of data changing at every burst
- DDR266A (133Mhz, CL=2): tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read: A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
50% of data changing at every burst
- DDR333(166Mhz, CL=2.5): tCK = 6ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 10*tCK, tRAS = 7*tCK
Read: A0 N N R0 N N N P0 N N A0 N - repeat the same timing with random address changing
50% of data changing at every burst
- DDR400(200Mhz, CL=3): tCK = 5ns, CL=3, BL=4, tRCD = 3*tCK, tRC = 11*tCK, tRAS = 8*tCK
Read: A0 N N R0 N N N N P0 N N - repeat the same timing with random address changing
50% of data changing at every burst
Legend: A=Activate, R=Read, W=Write, P=Precharge, N=NOP
IDD7: Operating c u rrent: Four bank operation
1. Typical Case: VDD = 2.5V, T=25 oC for DDR200, 266, 333; VDD = 2.6V, T=25 oC for DDR400
2. Worst Case: VDD = 2.7V, T= 0 oC
3. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not
changing. lout = 0mA
4. Ti ming patterns
- DDR200(100Mhz, CL=2): tCK = 10ns, CL2, BL=4, tRRD = 2*tCK, tRCD= 3*tCK, Read with Autoprecharge
Read: A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 - repeat the same timing with random address changing
50% of data changing at every burst
- DDR266B(133Mhz, CL=2.5): tCK = 7.5ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK Read with autoprecharge
Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
50% of data changing at every burst
- DDR266A (133Mhz, CL=2): tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK
Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
50% of data changing at every burst
- DDR333(166Mhz, CL=2.5): tCK = 6ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge
Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
50% of data changing at every burst
- DDR400(200Mhz, CL=3): tCK = 5ns, CL = 2, BL = 4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge
Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
50% of data changing at every burst
Legend: A=Activate, R=Read, W=Write, P=Precharge, N=NOP
Rev. 1.0 / May 2007 20
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
IDD Specification
64Mx8
32Mx16
Parameter Symbol Speed Unit
DDR400B DDR333 DDR266A DDR266B DDR200
Operating Current IDD0 130 120 100 mA
Operating Current IDD1 170 150 120 mA
Precharge Power Down Standby
Current IDD2P 10 mA
Idle Standby Current IDD2F 35 mA
Idle Quiet Standby Current IDD2Q 30 mA
Active Power Down Standby Current IDD3P 45 mA
Active Standby Current IDD3N 60 mA
Operating Current IDD4R 210 190 170 mAOperating Current IDD4W 230 210 180
Auto Refresh Current IDD5 260 240 220
Self Refresh Current Normal IDD6 5mA
Low Power 3mA
Operating Current - Four Bank
Operation IDD7 360 350 340 mA
Parameter Symbol Speed Unit
DDR400B DDR333 DDR266A DDR266B DDR200
Operating Current IDD0 130 120 100 mA
Operating Current IDD1 170 150 120 mA
Precharge Power Down Standby
Current IDD2P 10 mA
Idle Standby Current IDD2F 35 mA
Idle Quiet Standby Current IDD2Q 30 mA
Active Power Down Standby Current IDD3P 45 mA
Active Standby Current IDD3N 60 mA
Operating Current IDD4R 210 190 170 mAOperating Current IDD4W 230 210 180
Auto Refresh Current IDD5 260 240 220
Self Refresh Current Normal IDD6 5mA
Low Power 3mA
Operating Current - Four Bank
Operation IDD7 360 350 340 mA
Rev. 1.0 / May 2007 21
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
AC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V)
Note:
1. V
ID
is the magnitude of the difference between the input level on CK and the input on /CK.
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the same.
*For more information about AC Overshoot/Undershoot Specifications, refer to “Device Operation” section in hynix website.
AC OPERATING TEST CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Parameter Symbol Min Max Unit
Input High (Logic 1) Voltage, DQ, DQS and DM signals V
IH
(AC) V
REF
+ 0.31 - V
Input Low (Logic 0) Voltage, DQ, DQS and DM signals V
IL
(AC) - V
REF
- 0.31 V
Input Differential Voltage, CK and /CK inputs1V
ID
(AC) 0.7 V
DDQ
+ 0.6 V
Input Crossing Point Voltage, CK and /CK inputs2V
IX
(AC) 0.5*V
DDQ
-0.2 0.5*V
DDQ
+0.2 V
Parameter Value Unit
Reference Volta ge V
DDQ
x 0.5 V
Termination Voltage V
DDQ
x 0.5 V
AC Input High Level Voltage (VIH, min) V
REF
+ 0.31 V
AC Input Low Level Voltage (VIL, max) V
REF
- 0.31 V
Input Timing Measurement Reference Level Voltage V
REF
V
Output Timing Measurement Reference Level Voltage V
TT
V
Input Signal maximum peak swing 1.5 V
Input minimum Signal Slew Rate 1 V/ns
Termination Resistor (RT) 50 Ω
Series Resistor (RS) 25 W
Output Load Capacitance for Access Time Measurement (CL) 30 pF
Rev. 1.0 / May 2007 22
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
AC CHARACTERISTICS (note: 1 - 9 / AC operating conditions unless otherwise noted)
Parameter Symbol DDR400B DDR333 DDR266A DDR266B DDR200 UNIT
Min Max Min Max Min Max Min Max Min Max
Row Cycle Ti me tRC 55 - 60 - 65 - 65 - 70 - ns
Auto Re fresh Row
Cycle Time tRFC 70 - 72 - 75 - 75 - 80 - ns
Row Active Time tRAS 40 70K 42 70K 45 120K 45 120K 50 120K ns
Active to Read with
Auto Precharge Delay tRAP tRCD or
tRASmin -tRCD or
tRASmin -tRCD or
tRASmin -tRCD or
tRASmin -tRCD or
tRASmin -ns
Row Addr ess to
Column Address Delay tRCD 15 - 18 - 20 - 20 - 20 - ns
Row Active to Row
Active Delay tRRD 10 - 12 - 15 - 15 - 15 - ns
Column Address to
Column Address Delay tCCD1-1-1-1-1-tCK
Row Precharge Time tRP 15 - 18 - 20 - 20 - 20 - ns
Write Recovery Time tWR 15 - 15 - 15 - 15 - 15 - ns
Internal Write to Read
Command Delay tWTR2-1-1-1-1-tCK
Auto Precharge Write
Recovery + Precharge
Time22 tDAL
(tWR/
tCK)
+
(tRP/tCK)
-
(tWR/
tCK)
+
(tRP/tCK)
-
(tWR/
tCK)
+
(tRP/tCK)
-
(tWR/
tCK)
+
(tRP/tCK)
-
(tWR/
tCK)
+
(tRP/tCK)
-tCK
System
Clock Cycle
Time24
CL = 3
tCK
510--------ns
CL = 2.5 6 12 6 12 7.5 12 7.5 12 8.0 12 ns
CL = 2 7.5 12 7.5 12 7.5 12 10 12 10 12 ns
Clock High Level Width tCH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK
Clock Low Level Width tCL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK
Data-Out edge to Clock
edge Skew tAC -0.7 0.7 -0.7 0.7 -0.75 0.75 -0.75 0.75 -0.75 0.75 ns
DQS-Out ed ge to Clock
edge Skew tDQSCK -0.55 0.55 -0.6 0.6 -0.75 0.75 -0.75 0.75 -0.75 0.75 ns
DQS-Out edge to Data-
Out edge Skew21 tDQSQ - 0.4 - 0.45 - 0.5 - 0.5 - 0.6 ns
Data-Out hold time
from DQS20 tQH tHP
-tQHS -tHP
-tQHS -tHP
-tQHS -tHP
-tQHS -tHP
-tQHS -ns
Clock Half Period19,20 tHP min
(tCL,tCH) -min
(tCL,tCH) -min
(tCL,tCH) -min
(tCL,tCH) -min
(tCL,tCH) -ns
Data Hold Skew
Factor20 tQHS - 0.5 - 0.55 - 0.75 - 0.75 - 0.75 ns
Valid Data Output
Window tDV tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ ns
Rev. 1.0 / May 2007 23
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
- Continue
Parameter Symbol DDR400B DDR333 DDR266A DDR266B DDR200 UNIT
Min Max Min Max Min Max Min Max Min Max
Data-out high-impe dance window
from CK,/CK10 tHZ -0.7 0.7 -0.7 0.7 -0.75 0.75 -0.75 0.75 -0.8 0.8 ns
Data-out low-imped a nc e wi ndow
from CK, /CK10 tLZ -0.7 0.7 -0.7 0.7 -0.75 0.75 -0.75 0.75 -0.8 0.8 ns
Input Setup Time (f ast slew
rate)14,16-18 tIS 0.6 - 0.75 - 0.9 - 0.9 - 1.1 - ns
Input Hold Time (fast slew
rate)14,16-18 tIH 0.6 - 0.75 - 0.9 - 0.9 - 1.1 - ns
Input Setup Time (slow slew
rate)15-18 tIS 0.7 - 0.8 - 1.0 - 1.0 - 1.1 - ns
Input Hold T ime (slow sl ew
rate)15-18 tIH 0.7 - 0.8 - 1.0 - 1.0 - 1.1 - ns
Input Pulse Width17 tIPW 2.2 - 2.2 - 2.2 - 2.2 - 2.5 - ns
Write DQS High Level Width tDQSH 0.35 - 0.35 - 0.35 - 0.35 - 0.35 - tCK
Write DQS Low Level Width tDQSL 0.35 - 0.35 - 0.35 - 0.35 - 0.35 - tCK
Clock to First Rising edge of DQS-
In tDQSS 0.72 1.25 0.75 1.25 0.75 1.25 0.75 1.25 0.75 1.25 tCK
DQS falling edge to CK setup time tDSS 0.2 -0.2-0.2-0.2-0.2-tCK
DQS falling edge hold time from
CK tDSH 0.2 -0.2-0.2-0.2-0.2-tCK
DQ & DM input setup ti me25 tDS 0.4 - 0.45 - 0.5 - 0.5 - 0.6 - ns
DQ & DM input hold time25 tDH 0.4 - 0.45 - 0.5 - 0.5 - 0.6 - ns
DQ & DM Input Pulse Width17 tDIPW 1.75 - 1.75 - 1.75 - 1.75 - 2 - ns
Read DQS Preamble Time tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 tCK
Read DQS Postamble Time tRPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK
Write DQS Preamble Setup Time12 tWPRES 0-0-0-0-0-ns
Write DQS Preamble Hold Time tWPREH 0.25 - 0.25 - 0.25 - 0.25 - 0.25 - tCK
Write DQS Postamble Time11 tWPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK
Mode Register Set Delay tMRD 2-2-2-2-2-tCK
Exit Self Refresh to non-Read
command23 tXSNR 75 - 75 - 75 - 75 - 80 - ns
Exit Self Ref resh to Read
command tXSRD 200 - 200 - 200 - 200 - 200 - tCK
Average Periodic Refresh
Interval13,25 tREFI -7.8 - 7.8 - 7.8 - 7.8 - 7.8 us
Rev. 1.0 / May 2007 24
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
Note:
1. All voltages referenced to Vss.
2. Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels,
but the related specifications and device operation are guaranteed for the full voltage range specified.
3. Below figure represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to
be either a precise representation of the typical system environm ent nor a depiction o f the actual load p resented by a producti on
tester. System designer s wil l use IBIS or other simulation tools to correlate the timing reference load to a system environment.
Manufactur ers will correlat e to their product ion test conditio ns (generall y a coaxial tr ansmission line terminated at the tester elec-
tronics).
4. AC timing and IDD tests may use a VIL to VIHswing of up to 1.5 V in the test environment, but input timing is still referenced to
VREF (or to the crossing point for CK, /CK), and parameter specifications are guarantee d for the specified ac input levels under
normal use conditions. The minimum slew rate for the input signals is 1 V/ns in the range between VIL(ac) and VIH(ac).
5. The ac and dc input level sp ecifications are as defined in the SSTL_2 Standard (i.e., the receiver will effectively switch as a result
of the signal crossing the ac input level and will remain in that state as long as the signal does not ring back above (below) the
dc input LOW (HIGH) level.
6. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE < 0. 2VDDQ is
recognized as LOW.
7. The CK , /CK input referenc e level (for tim i ng refe renced to CK, /CK) is the point at which CK and /CK cr os s ; the input reference
level for signals other than CK, /CK is VREF.
8. The output timing reference voltage level is VTT.
9. Oper at ion or timin g that i s not s pecif ied is illegal and after such an event, in order to guarantee proper operation, the DRAM must
be powered down and th en restarted through the specified initialization sequence before normal operation can cont in ue.
10. tHZ and tLZ tr an siti ons oc cur in the same acc ess time win dows as v ali d data transitions. These par ameters are not r eferenced to
a specific voltage level but specify when the device output is no longer driving (HZ), or begins driving (LZ).
11. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but
system performance (bus turnaround) will degrade accordingly.
12. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A
valid transition is de fined as monotonic and meet ing the inpu t slew rate specifications of the device. When no writes were previ-
ously in progress on the bus, DQS will be transitioning from High-Z to logic LOW. If a previous writ e was in prog ress, DQS could
be HIGH, LOW, or transiti on in g f rom HIGH to LOW at this time, depending on tDQSS.
13. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
14. For command/address input sl ew rate ≥1.0 V/ns.
15. For command/address input slew rate ≥0.5 V/ns and ＜1.0 V/ns
16. For CK & /CK slew rate ≥1.0 V/ns (single-ended)
17. These parameters guarantee device timing, but they are not necess arily tested on each devi ce.
They may be guaranteed by device design or tester correlation.
18. Slew Rate is measured between VOH(ac) and VOL(ac).
19. Min (tCL, tCH) r ef ers to th e smaller of the ac tual clo ck l ow time an d the actu al cl ock hi gh t ime as pr ov ided t o the dev ice (i.e. this
value can be greater than the minimum specification limits for tCL and tCH).
For example, tCL and tCH are = 50% of the period, less the half period jit ter (tJIT(HP)) of the clock source, and less the half
period jitter due to crosst alk (tJIT(crosstalk)) into the clock traces.
Figure: Timing Referen ce Lo ad
VDDQ
50
Output
(VOUT)
30 pF
Ω
Rev. 1.0 / May 2007 25
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
20.tQH = tHP - tQHS, where:
tHP = minimum half clock period f or any giv en cycle and is defined by clock high or clock lo w (tCH, tCL). tQHS accounts fo r 1) The
pulse duration distortion of on-chip clock circuits; and 2) The worst case push--out of DQS on one transition followed by the
worst case pull--in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects,
and p-channel to n-channel variation of the output drivers.
21. tDQSQ:
Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given
cycle.
22. tDAL = (tWR/tCK) + (tRP/tCK)
For each of the terms above, if not already an integer, round to the next hi ghest integer.
Example: For DDR266B at CL=2.5 and tCK=7.5 ns
tDAL = ((15 ns / 7.5 ns) + (20 ns / 7.5 ns)) clocks
= ((2) + (3)) clocks
= 5 clocks
23. In all circumstances, tXSNR can be satisfied usin g
tXSNR = tRFCmin + 1*tCK
24. The only time that the clock frequency is allowed to change is during self-refresh mode.
25. If refr esh timin g or tDS/tD H is vi olated, data cor rupt ion may occ ur and the data must be re-written with valid da ta bef ore a v alid
READ can be executed.
Rev. 1.0 / May 2007 26
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
SYSTEM CHARACTERISTICS CONDITIONS for DDR SDRAMS
The following tables are described specification parameters that required in systems using DDR devices to ensure
proper performannce. These characteristics are for system simulation purposes and are guaranteed by design.
Input Slew Rate for DQ/DM/DQS (Table a.)
Address & Control Input Setup & Hold Time Derating (Table b.)
DQ & DM Input Setup & Hold Time Derating (Table c.)
DQ & DM Input Setup & Hold Time Derating for Rise/Fall Delta Slew Rate (Table d.)
Output Slew Rate Characteristics (for x8 Devices) (Table e.)
Output Slew Rate Characteristics (for x16 Device) (Table f.)
Output Slew Rate Matching Ratio Characteristics (Table g.)
AC CHARACTERISTICS DDR400 DDR333 DDR266 DDR200 UNIT Note
PARAMETER Symbol min max min max min max min max
DQ/DM/DQS input slew rate
measured between VIH(DC),
VIL(DC) and VIL(DC), VIH(DC) DCSLEW 0.5 4.0 0.5 4.0 0.5 4.0 0.5 4.0 V/ns 1,12
Input Slew Rate Delta tIS Delta tIH UNIT Note
0.5 V/ns 0 0 ps 9
0.4 V/ns +50 0 ps 9
0.3 V/ns +100 0 ps 9
Input Slew Rate Delta tDS Delta tDH UNIT Note
0.5 V/ns 0 0 ps 11
0.4 V/ns +75 0 ps 11
0.3 V/ns +150 0 ps 11
Input Slew Rate Delta tDS Delta tDH UNIT Note
±0.0 ns/V 00ps10
±0.25 ns/V +50 +50 ps 10
±0.5 ns/V +100 +100 ps 10
Slew Rate Characteristic Typical Range
(V/ns) Minimum
(V/ns) Maximum
(V/ns) Note
Pullup Slew Rate 1.2 - 2.5 1.0 4.5 1,3,4,6,7,8
Pulldown Slew Rate 1.2 - 2.5 1.0 4.5 2,3,4,6,7,8
Slew Rate Characteristic Typical Range
(V/ns) Minimum
(V/ns) Maximum
(V/ns) Note
Pullup Slew Rate 1.2 - 2.5 1.0 4.5 1,3,4,6,7,8
Pulldown Slew Rate 1.2 - 2.5 1.0 4.5 2,3,4,6,7,8
Slew Rate Characteristic DDR266A DDR266B DDR200 Note
Parameter min max min max min max
Output Sle w Rate M a tching Ratio
(Pullup to Pulldown) - - - - 0.71 1.4 5,12
Rev. 1.0 / May 2007 27
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
Note:
1. Pullup slew rate is characterized und er the test conditio ns as shown in below Figure.
2. Pulldown slew rate is measured under the test conditions shown in below Figure.
3. Pullup slew rate is measured between (VDDQ/2 - 320 mV ±250mV)
Pulldown slew rate is measured between (VDDQ/2 + 320mV ±250mV)
Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output
switching.
Example: For typical slew, DQ0 is switching
For minimum slew rate, all DQ bits are switching worst case pattern
For maximum slew rate, only one DQ is switching from either high to low, or low to high.
The remaining DQ bits remain the same as for previous state.
4. Evaluation conditions
Typical: 25 oC (Ambient), VDDQ = nominal, typical process
Minimum: 70 oC (Ambient), VD DQ = minimum, slow-slow process
Maximum: 0 oC (Ambient), VDDQ = Maximum, fast-fast process
5. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature
and voltage r ange. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process
variation.
6. Verified under typical conditions for qualification purposes.
7. TSOP- II pack age devi ces only.
8. Only intended for operation up to 256 Mbps per pin.
9. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5 V/ns as shown in Table b.
The Input slew rate is based on the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), sim-
ilarly for rising transitions.
10. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables c
& d. Input slew rate is based on the larger of AC-AC delta rise, fall rate and DC- DC delta rise, fall rate. Input slew r ate i s based on
the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), s imi larl y for rising transitions. The
delta rise/f all rate is calculated as:
{1/(Slew Rate1)} - {1/(slew Rate2)}
For example:
If Slew Rate 1 is 0.5 V/ns and Slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is -0.5 ns/V. Using the table given, this would
result in the need for an increase in tDS and tDH of 100ps.
11. Table c is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the
lesser of the AC- AC slew rate and the DC -DC slew r ate. The input slew rate is based on the lesser of the slew rates determined by
either VIH(ac) to VIL(AC) or VIH(DC) to VIL(DC), and similarly for risin g transitions.
12. DQS, DM, and DQ input slew rate is specified to prevent double clock in g of dat a and p reserve setup and hold times. Signal tran-
sitions through the DC region must be monotonic.
50
Output
(VOUT)
VSSQ
Test Point
Figure: Pu llup Sle w rate
Ω
VDDQ
50
Test Point
Output
(VOUT)
Figure: Pulldown Slew rate
Ω
Rev. 1.0 / May 2007 28
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
CAPACITANCE (TA=25oC, f=100MHz)
Note:
1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V
2. Pins not under test are tied to GND.
3. These values are guaranteed by design and are tested on a sample basis only.
OUTPUT LOAD CIRCUIT
Parameter Pin Symbol Min Max Unit
Input Clock Capacitance CK, /CK CI1 2.0 3.0 pF
Delta Input Clock Capacitance CK, /CK Delta CI1 -0.25pF
Input Capacita n ce All other input-o n ly pins CI1 2.0 3.0 pF
Delta Input Capacit ance All other input-only pins Delta CI2 -0.5pF
Input / Output Capacitance DQ, DQS, DM CIO 4.0 5.0 pF
Delta Input / Output Capa citance DQ, DQS, DM Delta CIO -0.5pF
VREF
VTT
RT=50Ω
Zo=50Ω
CL=30pF
Output
Rev. 1.0 / May 2007 29
1HY5DU12822D(L)TP
HY5DU121622D(L)TP
PACKAGE INFORMATION
400mil 66pin Thin Small Outline Package
10.26 (0.404)
10.05 (0.396)
11.94 (0.470)
11.79 (0.462)
22.33 (0.879)
22.12 (0.871)
1.194 (0.0470)
0.991 (0.0390)
0.65 (0.0256) BSC 0.35 (0.0138)
0.25 (0.0098)
0.1 5 ( 0 .0059 )
0.0 5 ( 0 .0020 )
BASE PLANE
SEATING PLANE
0.597 (0.0235)
0.406 (0.0160) 0.210 (0.0083)
0.120 (0.0047)
0 ~ 5 Deg.
U n it : mm (Inc h ) max
min
,
