WESTCODE SEMICONDUCTORS distributed amplified gate for high di/dt and low switching losses 500 amperes average: up to 1200 volts Voau/Vprn Ratings (Maximum values at 125C Tj unless stated otherwise) LIE D WM 9705955 0002053 & mm 7-25-20 GY) WESTCODE @ SEMICONDUCTORS High Frequency Inverter Grade Capsule Thyristor Type R185C Technical Publication TR185C issue 1 March 1985 RATING CONDITIONS SYMBOL 58C heatsink temperature 500 A Average on-state current Half sine wave {double side cooled) bray) 85C heatsink temperature 185 A (single side cooled) R.M.S. on-state current 25C heatsink temperature, double side cooled br iams) 1030 A Continuous on-state current 25C heatsink temperature, double side cooled Cy 820A Peak one-cycle surge 10ms duration, 60% Vans, re-applied hsm 6000 A (non-repetitive) on state current 10ms duration, Vas 10 volts Frsm (2) 6600 A . 10ms duration, Vas 10 volts lt (2) 218000 A2s Maximum permissible surge energy 3ms duration, Vas 10 volts (t 160000 A?s Peak forward gate current Anode positive with respect to cathode lem W1A Peak forward gate voltage Anode positive with respect to cathode Veo 13.5 V Peak reverse gate voltage Vacm BV Average gate power Pg 1.5W Peak gate power 100us. pulse width Pom 60 W Rate of rise of off-state voltage To 80% Vpam gate open-circuit dv/dt *200 V/ps Rate of rise of on-state current di/dt (1) 500 A/ps (repetitive) Gate drive 20 volts, 20 ohms with t, < tus, Rate of rise of on-state current Anode voltage < 80% Voam di/dt (2) 1000 A/ps (non-repetitive) Operating temperature range Ths 40 + 125C Storage temperature range Tstg 40+ 150C Characteristics (Maximum values at 125C Tj unless stated otherwise) CHARACTERISTIC CONDITIONS SYMBOL Peak on-state voltage At 1000 A, lin Vim 2.15 V Forward conduction threshold voltage Vo 1.51 V Forward conduction slope resistance r 0.64 ma Repetitive peak off-state current At Voam loam 60 mA Repetitive peak reverse current At Var lan 60 mA Maximum gate current required to fire all devices ler 200 mA Maximum gate voltage required to fire all devices } At 25C, V,=6V, I,=1A { Ver 3V Maximum holding current la iA Maximum gate voltage which will not trigger any device Veo 0.25 V Stored charge Ir, = 550 A, dir/dt 40 A/ps 60 nC Vam = 50V, 50% chord value Or, Circuit commutated turn-off time Ly = 550 A 200V /us to 80% Vorm| td 20~25 us available down to dir/dt=40A/ys, Vay, = 50V) 20V/ps to 80% Vonm| ta typical 15-20 ps Thermal resistance, junction to heat sink, Double side cooled Rant 0.06C/W for a device with a maximum forward volt Single side cooled rhs) 0.12C/W drop characteristic VOLTAGE CODE H02 HO4 HO6 HO8 H1i0 H12 Repetitive peak voltages Verm Vorm Non-repetitive peak off-state voltage Vos 200 400 600 800 1000 1200 Non-repetitive peak reverse blocking voltage | Vasm | 300 500 700 900 1100 1300 Ordering Information (Please quote device code as explained below 11 digits) R 18 5 @ese e e 0 . dv/dt code to 80% Voam Turn-off time Fixed Voltage Code C=20V/us E=100V/us | J=25us K=20 ps type code (see ratings) D=50V/us F=200V/us L=15 ps Typical code: R185CHO8FJO = 800 Vany 800 Vor 200 V/us dv/dt to 80% Vpax 26 ns turn-off *Other values of dv/dt up to 1000 V/us, and turn-off time may be available.WESTCODE SEMICONDUCTORS Lig D ml F70995S OOO2054 T m= 25= 2p 1. INTRODUCTION f =rated frequency at the original heat The R185C thyristor series incorporates diffused sink temperature silicon slices 30 mm diameter in cold-weld ae . housings. Fast turn-on is achieved by h The total dissipation is now given by interdigitation of the cathode, enabling these Wirons = Wrorainay t AX f devices to withstand high di/at and give low froth loriginal turn-on loss in chopper and inverter operation. PP P (b) Design Method h In circumstances where it is not possible to 2. NOTES ON THE RATINGS measure voltage and current conditions, or for (a) Rate of rise of on-state current design purposes, the additional losses may be > The maximum un-primed rate of rise of on-state estimated from figure 7. A typical R-C snubber current must not exceed 1000 A/ys at any time network is connected across the thyristor to during turn-on ona nor repetitive basis. For ' control the transient reverse voltage waveform. repetitive performance the on-state rate of rise 0 current must not exceed 500 A/ys at any time ret aie te wa\ue of energy per reverse cycle in during turn-on. Note that these values of current J gure 7). rate of rise apply to the circuit external to the Let f be the operating frequency in Hz device and its specified snubber network an _ a device current rates of rise will be higher. then Tsink New =Tsinx Original ERin x f (b) Square wave ratings where Tink new is the required maximum heat These ratings are given for leading edge linear sink temperature rates of rise of forward current of 100 and and Tginx original is the heat sink temperature 500 A/us. given with the frequency ratings. (c) Duty Cycle Lines The 100% duty cycle line appears on all these, ratings. These frequency ratings are presented in the form that all duty cycles may be represented 4. GATE DRIVE by straight parallel lines. The recommended gate drive is 20 V, 20 ohms (d) Maximum operating Frequency with a short-circuit current rise time of not more The maximum operating frequency, fmaex, is set than 1 zs, This gate drive must be applied when by the time required for the thyristor to turn off using the full di/dt capability of the device. (tq) and for the off-state voltage to reach full value (tv), i.e. 1 5. THE DV/DT SUPPRESSION NETWORK >} fmox= ++ tq + tv The effect of a conventional resistor-capacitor pulse _ snubber of 0.22 nF 5 ohms has been included in (e) Energy per pulse characteristics ; these ratings and all rating di/dt values apply to These curves enable rapid estimation of device the circuit external to the thyristor and its dissipation to be obtained for conditions not suppression network. covered by the frequency ratings. Let E, be the Energy per pulse for a given Snubber Network Values : current and pulse width, fm joules. g A series connected C-R filter may be required across the anode to cathode terminals of the Then Wayv=E, xf. thyristor for the purpose of reducing off-state 3. REVERSE RECOVERY LOSS voltage overshoot. oo, The optimum values for C and R depend partly On account of the number of circuit variables on the circuits connected to the thyristor. For affecting reverse recovery voltage, no allowance most applications the snubber design values for reverse recovery loss has been made in should not exceed a maximum of 0,22 pF or a these ratings. The following procedure is minimum of 5 ohms. Please consult Westcode recommended for use where it is necessary to for values outside these limits. include reverse recovery loss. (a) Determination by Measurement From waveforms of recovery current oprained 6. NOTE1 from a high frequency shunt (see Note 1) an reverse voltage present during recovery, an RE tetoe RECOVERY LOSS BY instantaneous reverse recovery loss waveform MEASUREMENT must be constructed. Let the area under this _ This thyristor has a low reverse recovered charge B waveform be A joules per pulse. A new heat sink and peak reverse recovery current. When temperature can then be evaluated from: measuring the charge care must be taken to r..106 ensure that: Tsink (new) = Tsink (original) A (se +Rinx 7 (a) a.c. coupled devices such as current transformers are not affected by prior passage of where r,= 1.23 x 10-4/T high amplitude forward current. t=duration of reverse recovery loss per (b) The measuring oscilloscope has adequate pulse in microseconds A= Area under reverse loss waveform per pulse in joules (W.S.) dynamic range typically 100 screen heights to cope with the initial forward current without overload.C) WESTCODE SEMICONDUCTORS 100 Rating at Mounting Force: >530 kgf <530 Prequevy by (d dsle side costed) requency by louble side coo a Y 0.5 0.4 side Ths = 85C 10 500 A/us square wave 0.1 frequency, KHz 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 1 Frequency v. pulse width 100 For Rating at Force: >530 <530 Multiply 4,0 0.8 Frequency by (double side cooled) 05 0.4 side cooled) 10 Ths = 55C 500 A/us square wave 0.1 frequency, KHz 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 3. Frequency v. pulse width WIE D gm 9709955 ooo20ss 1 mi 7-25-20 100 For Rating at Force: >530 <630 Multiply 1.0 08 Frequency by (double side cooled) 0.5 0.4 side cooled) 10 Ths = 85C 100 A/zs square wave 0.1 frequency, KHz 0.01 0.01 0.1 1 10 pulse width, m.secs . Figure 2 Frequency v. pulse width 100 For Rating at Mounting Force: >530 kgf <630 kgf Multiply 1.0 0.8 Frequency by (double side cooled) 0.5 0.4 {single side cooled) Ths = 55C 10 100 A/us square wave 0.1 frequency, KHz 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 4 Frequency v. pulse widthWESTCODE SEMICONDUCTORS WE D mm 1709955 O00205b 3 mm 7-25-20 400 100 10 10 8 0.1 8 0.1 3 3 T= 125C 3 Tj= 125C 2 500 A/us 3 100 A/zs = square wave > square wave an 3 2 5 0.01 5 0.01 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 5 Energy/pulse v. pulse Figure 6 Energy/pulse v. pulse width width 0.06 0.05 0.04 0.03 wy 0.02 x 3 g a a snubber connected 0.22 nF 5 0 g peak reverse voltage Vay = 0.67 Varo max. (804 volts) & 0.01 20 30 40 50 100 200 commutating di/dt, A/yps Figure 7 Max. reverse recovery energy loss per pulse at 125C junction temperature and Vam = 804 volts.WESTCODE SEMICONDUCTORS L9 D m@ 9709955 o002057 Ss mi J-25-26 100 100 For Rating at Force: >530 <530 Multiply b td 1 io id 0.8 requency by louble side 4 vey 0.5 0.4 (single side cooled) Ths = 85C 10 sine wave 10 0.1 0.1 a Ss N 3 x= ~ Z 2 g a T)= 125C 3 > sine wave og @ o c = 0.01 & 0.01 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 8 Frequency v. pulse width Figure 9 Energy/pulse v. pulse width 200 100 For Rating at Mounting Force: >530 kgf <530 kgf Frequen double side cooled) requency by- ( ouble si @ coole (single side cooled) 1 Ths = 55C 0 sine wave 100 90 80 1 4 7 2 5 60 Oo Q 3 E ~ 50 0.1 Sd x 5 2 40 Oo 2 3 3 $ 3 8 = 0.01 2 30 0.01 0,1 1 10 20 30 40 50 100 200 pulse width, m.secs commutating di/dt, A/ps Figure 10 Frequency v. pulse Figure 11 Maximum recovered width charge at 125C junction temperaturetransient thermal impedance, C/W WESTCODE SEMICONDUCTORS _ ah 3 S _ 10 0.01 total peak half-sine surge current, k.amperes 0.001 1 0.001 0.01 0.1 1 10 1 time, seconds Figure 12 Junction to heatsink - transient thermal impedance 4 (lg tr'= 18) 12 10 8 8 g of all devices tie 6 for details of (pulse) > this area see o 4 rfigure 15 & (average) $ 2 Qo s > 0 0.1 03 05 1 3 6 10 30 50 gate current, Ig, amperes Figure 14 Gate characteristics at 25C junction temperature 10000 peak on-state current, amperes 1000 100 1.2 1.6 20 24 28 3.2 on-state valtage, volts Figure 16 Limit on-state current characteristics 3.6 40 4.4 m.secs dimensions in mm (inches) Mounting force; 530-1000 kgf Weight: 90 grams Note: Box Clamp mounting Box Clamp No. 101A226B Mounting force: 365 kgf min. Rehg-hs) 0.125C/W LIE D mm 1709955 go02058 2? mI 7-25-20 10 2 maximum {2t (amps? secs) g 5 10 50 100 cycles at 50 Hz duration of surge Figure 13 Max. non-repetitive surge current at initial junction temperature 125C Note: This rating must not be interpreted as an intermittent rating in this area gate voltage, Vg, volts 0 100 200 300 400 gate current, Ig, milliamperes Figure 15 Gate triggering characteristics. Trigger points of all thyristors lie within the areas shown Gate drive load line must lie outside appropriate Ig/Vg rectangle ey 3.6x1.9 4.8 (.19) (14.075) 2-HOLES 42 (1.65) COMPRESSED 281 HEIGHT ; 0.3(.01) | (38) | } ft + Ppa S 0.3(.01) D254 15/1415 #9) can ees REC (59/58) No.60598-1 TO - 200AB in tne interest of product improvement, Westcode reserves the right to change specifications at any time without notice. WESTCODE SEMICONDUCTORS LTD P.O. Box 57 Chippenham Wiltshire SN15 1JL England Telephone Chippenham (0249) 654141 Telex 44751 fy HAWKER SIDOELEY Westinghouse Brake and Signal Co. Ltd. Printed by The Pheon Press, Bristol 2M485