RDX120N50
Transistors
1/2
10V Drive
Nch
MOS FET
RDX120N50
zStructure zExternal dimensions (Unit : mm)
Silicon N-channel MOS FET
TO-220FM
(1)Gate
zFeatures
1) Low on-resistance.
2) Low input cap acitance.
3) Excellent resistance to damage from static electricity.
zApplications
(2)Dr
(3)Source
ain
4.5 2.8
0.75
φ3.2
)(
3
0.8
2.54 2.62.54
1.3 1.2
14.0
12.0
8.02.5
10.0
15.0
(2)(1)
Switching
zPackaging specifications zInner circuit
(1) Gate
(2) Drain
(3) Source
∗1 GATE PROTECTION DIODE
∗2 BODY DIODE
∗2
∗1
(1) (3)(2)
Package
Code Bulk
Basic ordering unit (pieces)
RDX120N50
−
500
Type
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation (Tc=25°C)
Channel temperature
Avalanche current
Avalanche energy
Range of storage temperature
Continuous
Pulsed
Continuous
Pulsed
Source current
(Body diode)
∗2
∗1
∗2
∗3
∗4
VV
DSS
Symbol 500 VV
GSS
±30 AI
D
±12 AI
DP
±48 AI
S
12 AI
SP
48
P
D
W45
°CTch 150
°CTstg −55 to +150
Limits Unit
I
AS
A12
E
AS
mJ260
∗1 Limited only by maximum temperature allowed
∗3 L = 3.1mH V
DD
=90V Rg=25Ω ∗4 L = 3.1mH V
DD
=90V Rg=25Ω startingTch=25°C
∗2 Pw 10µs, Duty cycle 1%
zThermal resistance
Parameter
°C/W
Rth(ch-c)
Symbol Limits Unit
Channel to case 2.78
RDX120N50
Transistors
2/2
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min.
−
Typ. Max. Unit Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
−±10 µA
500 −−V
−−25 µA
2.0 −4.0 V
−0.38 0.5 Ω
5.0 8.0 −S
−1600 −pF
−200
35 −pF
−25 −pF
−17 −ns
−80 −ns
−44 −ns
−45 −ns
−8−nC
−15 −nC
−−nC
V
GS
= ±25V, V
DS
=0V
V
DD
250V
I
D
= 1mA, V
GS
=0V
V
DS
= 500V, V
GS
=0V
V
DS
= 10V, I
D
= 1mA
I
D
= 6A, V
GS
= 10V
V
DS
= 10V, I
D
= 6A
V
DS
= 25V
V
GS
=0V
f=1MHz
V
GS
=
10V
I
D
=
12A
V
DD
150V
I
D
= 6A
V
GS
= 10V
R
L
= 25Ω
R
G
=10Ω
zBody diode characteristics (Source-drain) (Ta=25°C)
V
SD
−−1.5 V I
S
= 12A, V
GS
=0VForward voltage t
rr
−550 −ns I
DR
= 12A, V
GS
=0V
di/dt= 100A / µs
Reverse recovery time Q
rr
−4.7 −µCReverse recovery charge
∗ Pulsed
∗
Parameter Symbol Min. Typ. Max. Unit Conditions
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
