MPSA18 Preferred Device Low Noise Transistor NPN Silicon Features * Pb-Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO 45 Vdc Collector -Base Voltage VCBO 45 Vdc Emitter -Base Voltage VEBO 6.5 Vdc Collector Current - Continuous IC 200 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 2 BASE 1 EMITTER MARKING DIAGRAM TO-92 CASE 29-11 STYLE 1 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. RJA is measured with the device soldered into a typical printed circuit board. MPS A18 AYWW G G 3 MPSA18 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPSA18 MPSA18G MPSA18RLRA MPSA18RLRAG MPSA18RLRM MPSA18RLRMG MPSA18RLRP MPSA18RLRPG Package Shipping TO-92 5000 Units/Box TO-92 (Pb-Free) 5000 Units/Box TO-92 2000/Tape & Reel TO-92 (Pb-Free) 2000/Tape & Reel TO-92 2000/Ammo Pack TO-92 (Pb-Free) 2000/Ammo Pack TO-92 2000/Ammo Pack TO-92 (Pb-Free) 2000/Ammo Pack For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 January, 2006 - Rev. 3 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MPSA18/D MPSA18 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector -Emitter Breakdown Voltage (Note 2) (IC = 10 mAdc, IB = 0) V(BR)CEO 45 - - Vdc Collector -Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 45 - - Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.5 - - Vdc ICBO - 1.0 50 nAdc 400 500 500 500 580 850 1100 1150 - - - 1500 - - - 0.08 0.2 0.3 OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) hFE Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base -Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) VBE(on) - 0.6 0.7 Vdc fT 100 160 - MHz Collector-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb - 1.7 3.0 pF Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb - 5.6 6.5 pF Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 kW, f = 1.0 kHz) (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 100 Hz) NF - - 0.5 4.0 1.5 - Equivalent Short Circuit Noise Voltage (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 100 Hz) VT - 6.5 - - Vdc SMALL- SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 dB nV Hz MPSA18 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE 30 30 BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz 20 RS 0 IC = 10 mA en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) 20 3.0 mA 10 1.0 mA 7.0 5.0 RS 0 f = 10 Hz 10 100 Hz 7.0 10 kHz 1.0 kHz 5.0 300 mA 3.0 10 20 50 100 200 3.0 0.01 0.02 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) Figure 2. Effects of Frequency IC = 10 mA 3.0 3.0 mA 1.0 mA 1.0 0.7 0.5 300 mA 100 mA 0.3 0.2 0.1 RS 0 10 20 10 mA 50 100 200 5.0 10 20 BANDWIDTH = 1.0 Hz 2.0 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 3. Effects of Collector Current NF, NOISE FIGURE (dB) In, NOISE CURRENT (pA) 10 7.0 5.0 100 kHz 16 BANDWIDTH = 10 Hz to 15.7 kHz 12 500 mA 8.0 IC = 1.0 mA 100 mA 10 mA 4.0 30 mA 0 10 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) 20 Figure 4. Noise Current 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 20 BANDWIDTH = 1.0 Hz IC = 10 mA 100 mA 100 70 50 NF, NOISE FIGURE (dB) VT, TOTAL NOISE VOLTAGE (nV) 300 200 3.0 mA 1.0 mA 30 300 mA 20 10 7.0 5.0 30 mA 10 mA 16 IC = 10 mA 3.0 mA 1.0 mA 12 300 mA 8.0 100 mA 30 mA 4.0 10 mA BANDWIDTH = 1.0 Hz 3.0 0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) 10 Figure 6. Total Noise Voltage 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 7. Noise Figure http://onsemi.com 3 h FE , DC CURRENT GAIN (NORMALIZED) MPSA18 4.0 3.0 VCE = 5.0 V 2.0 TA = 125C 25C 1.0 -55 C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 1.0 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 2.0 3.0 5.0 10 Figure 8. DC Current Gain -0.4 RVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/C) 1.0 TJ = 25C V, VOLTAGE (VOLTS) 0.8 0.6 VBE @ VCE = 5.0 V 0.4 0.2 -0.8 -1.2 TJ = 25C to 125C -1.6 -2.0 -55 C to 25C VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 -2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 8.0 C, CAPACITANCE (pF) 6.0 TJ = 25C Cob 4.0 3.0 Ceb Cib Ccb 2.0 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 10. Temperature Coefficients f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 9. "On" Voltages 20 50 100 Figure 11. Capacitance 500 300 200 100 VCE = 5.0 V TJ = 25C 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 4 MPSA18 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X-X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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