BD237D - DC Components Co., Ltd. - Datasheet.Directory

BD237D

DISCRETE SEMICONDUCTORS

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for medium power linear and switching

applications.

Pinning

1 = Emitter

2 = Collector

3 = Base

TO-126ML

Dimensions in inches and (millimeters)

.090

(2.28)

.123(3.12)

.113(2.87)

.084(2.14)

.074(1.88)

.033(0.84)

.027(0.68)

.163(4.12)

.153(3.87) .044(1.12)

.034(0.87)

.060(1.52)

.050(1.27)

.084(2.12)

.074(1.87)

.591(15.0)

.551(14.0)

.300(7.62)

.290(7.37)

.148(3.75)

.138(3.50)

.056(1.42)

.046(1.17)

.180

(4.56)Typ

.146(3.70)

.136(3.44)

.027(0.69)

.017(0.43)

Typ

123

Characteristic Symbol Rating Unit

Collector-Base Voltage VCBO 100 V

Collector-Emitter Voltage VCEO 80 V

Emitter-Base Voltage VEBO 5 V

Collector Current (DC) IC2 A

Collector Current (peak) IC6 A

Total Power Dissipation(TC=25oC) PD25 W

Junction Temperature TJ+150 oC

Storage Temperature TSTG -55 to +150 oC

Absolute Maximum Ratings(TA=25oC)

Characteristic Symbol Min Typ Max Unit Test Conditions

Collector-Base Breakdown Volatge BVCBO 100 - - V IC=1mA

Collector-Emitter Breakdown Voltage BVCEO 80 - - V IC=100mA

Emitter-Base Breakdown Voltage BVEBO 5 - - V IE=100µA

Collector Cutoff Current ICBO - - 0.1 mA VCB=100V

Emitter Cutoff Current IEBO - - 1 mA VEB=5V

Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.6 V IC=1A, IB=0.1A

Base-Emitter On Voltage(1) VBE(on) - - 1.3 V IC=1A, VCE=2V

DC Current Gain(1) hFE1 40 - - - IC=150mA, VCE=2V

hFE2 25 - - - IC=1A, VCE=2V

Transition Frequency fT3 - - MHz IC=250mA, VCE=10V, f=100MHz

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified)

(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%