Features
1 of 8
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RF MEMS
CGB-1089Z
50MHz to 1000MHz SINGLE ENDED
InGaP/GaAs HBT MMIC CATV AMPLIFIER
RFMD’s CGB-1089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with a 75Ω active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 5V supply, the CGB-1089Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The CGB-1089Z product is designed for high linearity 5V gain
block applications that require small size and minimal external compo-
nents. It is internally matched to 75Ω.
Gain & Return L o s s
db(S21)
db(S11)
-30
-25
-20
-15
-10
0
2
4
6
8
50 150 250 350 450 550 650 750 850 950
Return
Flat Gain
Response:16dB±0.4dB
Excellent Return Loss:21dB
Low Distortion:-77/-65dBc
CTB/CSO
Single Fixed 5V Supply
Robust 1000V ESD, Class 1C
Applications
CATV Network Amplifiers
CATV Drop Amplifiers
Optical Rx/Tx
FTTH Video Solutions
EDS-104857 Rev D
9
9
CGB-1089Z
50Mhz to
1000MHz Sin-
gle Ended
InGaP/GaAs
HBT MMIC
CATV Amplifier
Parameter Specification Unit Condition
Min. Typ. Max.
Small Signal Gain 14.5 16.0 17.5 dB 500MHz
Output Power at 1dB Compression 16.5 18.0 dBm 500MHz
Third Order Intercept Point 35.0 dBm 500MHz
Second Order Intercept Point 50.0 dBm 500MHz
79Ch., Flat Tilt, 25dBmV, -65.0 dBc CSO
79Ch., Flat Tilt, 25dBmV -77.0 dBc CTB
79Ch., Flat Tilt, 25dBmV 76.0 dBc XMOD
Worst Case Input Return Loss 18.0 19 dB 50MHz to 1000MHz
Worst Case Output Return Loss 14 15 dB 50MHz to 1000MHz
Noise Figure 3.5 4.0 dB 500MHz
Reverse Isolation, 19.0 dB 50MHz to 1000MHz
Thermal Resistance 48.8 °C/W junction - lead
Device Operating Voltage 5.0 V
Device Operating Current 68.0 80.0 92.0 mA
Test Conditions: VD=5V, ID=80mA Typ., OIP3, OIP2 Tone Spacing=6MHz, POUT per tone=0dBm, TL=25°C, ZS=ZL=75Ω, Tested will App Circuit