1N5806US/TR - MICROSEMI - Datasheet.Directory

1. Product profile

1.1 General description

The BGU6102 MMIC is an unmatched wideband MMIC featuring an integrated bias,

enable function and wide supply voltage. BGU6102 is part of a family of three products

(BGU6101, BGU6102 and BGU6104) and is optimized for 2 mA operation.

1.2 Features and benefits

Supply voltage range from 1.5 V to 5 V

Current range up to 20 mA at 3 V and 40 mA at 5 V supply voltage

NFmin of 0.7 dB

Applicable between 40 MHz and 4 GHz

Integrated temperature-stabilized bias for easy design

Bias current configurable with external resistor

Power-down mode current consumption < 6 A

ESD protection on all pins up to 3 kV HBM

Small 6-pin leadless package 2.0 mm  1.3 mm 0.35 mm

1.3 Applications

1.4 Quick reference data

BGU6102

Wideband silicon low-noise amplifier MMIC

Rev. 3 — 13 July 2012 Product data sheet

FM radio RKE, TPMS

Mobile TV, CMMB AMR, ZigBee, Bluetooth

ISM WiFi, WLAN (2.4 GHz)

Wireless security Low current applications

Table 1. Quick reference data

Tamb =25



C; VCC = 3.0 V; ICC(tot) = 3. 0 mA; VENABLE



1.2 V unless otherwise specified. All

measurements done on characterization board withou t matching, de-embedded up to the pins.

Symbol Parameter Conditions Min Typ Max Unit

s212insertion power gain f = 450 MHz - 18.5 - dB

f = 900 MHz - 16.5 - dB

f = 2400 MHz; ICC(tot) = 6 mA - 14.0 - dB

NFmin minimum noise figure f = 450 MHz - 0.7 - dB

f = 900 MHz - 0.8 - dB

f = 2400 MHz; ICC(tot) =6mA - 1.2 - dB

Product data sheet Rev. 3 — 13 July 2012 2 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

2. Pinning information

2.1 Pinning

2.2 Pin description

3. Ordering information

PL(1dB) output power at 1 dB gain

compression f = 450 MHz - 5.0 - dBm

f = 900 MHz - 5.5 - dBm

f = 2400 MHz; ICC(tot) =6mA - 0 - dBm

IP3Ooutput third-order

intercept point f = 450 MHz - 5.5 - dBm

f = 900 MHz - 6.0 - dBm

f = 2400 MHz; ICC(tot) =6mA - 11.5 - dBm

Table 1. Quick reference data …continued

Tamb =25



C; VCC = 3.0 V; ICC(tot) = 3. 0 mA; VENABLE



1.2 V unless otherwise specified. All

measurements done on characterization board withou t matching, de-embedded up to the pins.

Symbol Parameter Conditions Min Typ Max Unit

Fig 1. Pin configuration

Transparent top view

Tabl e 2. Pin description

Symbol Pin Description

VCC 1 supply voltage

n.c. 2 not connected

RF_IN 3 RF in

RF_OUT 4 RF out

ENABLE 5 enable

CUR_ADJ 6 current adjust

GND GND ground pad; RF and DC ground

Tabl e 3. Ordering i nfo rmation

Type number Package

Name Description Version

BGU6102 HXSON6 plastic thermal enhanced super thin small outline

package; no leads; 6 terminals; body 2 x 1.3 x 0.35 mm SOT1209

OM7809 - 50  LNA evaluat i on bo ard -

OM7810 - high-ohmic LNA evaluation bo ard -

Product data sheet Rev. 3 — 13 July 2012 3 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

4. Marking

5. Limiting values

[1] Due to internal ESD diode protection, the applied voltage should not exceed the specified maximum in order to avoid excess current.

[2] The RF input is directly coupled to the base of the RF transistor.

6. Thermal characteristics

7. Static characteristics

[1] ICC(tot) = ICC + IRF_OUT + IR_BIAS.

[2] Configurable with external resistor.

Table 4. Marking

Type number Marking Description

BGU6102 1B* * = p : made in Hong Kong

* = t : made in Malaysia

* = W : made in China

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage RF input, AC coupled - 5.5 V

VENABLE voltage on pin ENABLE [1] 0.5 VCC +1.8 V

VRF_IN voltage on pin IN DC [2] 0.5 +0.9 V

VRF_OUT voltage on pin RF_OUT DC 0.5 VCC +1.8 V

ICC(tot) total supply current VCC = 5.0 V - 40 mA

Tstg storage temperature 55 +150 C

Tjjunction temperature - 150 C

VESD electrostatic discharge voltage Human Body Model (HBM); according to

JEDEC standard 22-A114E -3000 V

Charged Device Model (CDM); according to

JEDEC standard 22-C101B -500 V

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-sp) thermal resistance from junction to solder point 110 K/W

Table 7. Static characteristics

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage RF input, AC coupled 1.5 - 5.0 V

ICC(tot) total supply current VCC = 3.0 V [1][2] 2.1 - 21 mA

VENABLE  0.4 V [1] --0.01mA

Tamb ambient temperature 40 +25 +85 C

Product data sheet Rev. 3 — 13 July 2012 4 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

8. Dynamic characteristics

Table 8. Dynamic characteristics

Tamb =25



C; VCC = 3.0 V; VENABLE



1.2 V unless otherwise specified. All measurements done on

characterization board without matching, de-embedded up to the pins.

Symbol Parameter Conditions Min Typ Max Unit

100 MHz frequency

s212insertion power gain f = 100 MHz

ICC(tot) = 2 mA - 16.0 - dB

ICC(tot) = 3 mA - 19.5 - dB

ICC(tot) = 6 mA - 24.5 - dB

ICC(tot) = 10 mA - 28.0 - dB

ICC(tot) = 20 mA - 31.5 - dB

MSG maximum stable gain f = 100 MHz

ICC(tot) = 2 mA - 29.0 - dB

ICC(tot) = 3 mA - 31.0 - dB

ICC(tot) = 6 mA - 33.5 - dB

ICC(tot) = 10 mA - 35.5 - dB

ICC(tot) = 20 mA - 37.5 - dB

NFmin minimum noise figure f = 100 MHz

ICC(tot) = 2 mA - 0.8 - dB

ICC(tot) = 3 mA - 0.7 - dB

ICC(tot) = 6 mA - 0.8 - dB

ICC(tot) = 10 mA - 0.8 - dB

ICC(tot) = 20 mA - 1.0 - dB

PL(1dB) output power at 1 dB gain compression f = 100 MHz

ICC(tot) = 2 mA - 6.0 - dBm

ICC(tot) = 3 mA - 4.5 - dBm

ICC(tot) = 6 mA - 0.5 - dBm

ICC(tot) = 10 mA - 4.0 - dBm

ICC(tot) = 20 mA - 9.5 - dBm

IP3Ooutput third-order intercept point f = 100 MHz

ICC(tot) = 2 mA - 3.0 - dBm

ICC(tot) = 3 mA - 5.5 - dBm

ICC(tot) = 6 mA - 10.5 - dBm

ICC(tot) = 10 mA - 14.5 - dBm

ICC(tot) = 20 mA - 19.5 - dBm

Product data sheet Rev. 3 — 13 July 2012 5 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

150 MHz frequency

s212insertion power gain f = 150 MHz

ICC(tot) = 2 mA - 16.0 - dB

ICC(tot) = 3 mA - 19.0 - dB

ICC(tot) = 6 mA - 24.5 - dB

ICC(tot) = 10 mA - 27.5 - dB

ICC(tot) = 20 mA - 31.0 - dB

MSG maximum stable gain f = 150 MHz

ICC(tot) = 2 mA - 27.5 - dB

ICC(tot) = 3 mA - 29.0 - dB

ICC(tot) = 6 mA - 32.0 - dB

ICC(tot) = 10 mA - 34.0 - dB

ICC(tot) = 20 mA - 36.0 - dB

NFmin minimum noise figure f = 150 MHz

ICC(tot) = 2 mA - 0.8 - dB

ICC(tot) = 3 mA - 0.7 - dB

ICC(tot) = 6 mA - 0.8 - dB

ICC(tot) = 10 mA - 0.8 - dB

ICC(tot) = 20 mA - 1.0 - dB

PL(1dB) output power at 1 dB gain compression f = 150 MHz

ICC(tot) = 2 mA - 6.5 - dBm

ICC(tot) = 3 mA - 4.5 - dBm

ICC(tot) = 6 mA - 0.0 - dBm

ICC(tot) = 10 mA - 3.5 - dBm

ICC(tot) = 20 mA - 9.0 - dBm

IP3Ooutput third-order intercept point f = 150 MHz

ICC(tot) = 2 mA - 3.0 - dBm

ICC(tot) = 3 mA - 5.5 - dBm

ICC(tot) = 6 mA - 10.5 - dBm

ICC(tot) = 10 mA - 14.5 - dBm

ICC(tot) = 20 mA - 19.5 - dBm

Table 8. Dynamic characteristics …continued

Tamb =25



C; VCC = 3.0 V; VENABLE



1.2 V unless otherwise specified. All measurements done on

characterization board without matching, de-embedded up to the pins.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 3 — 13 July 2012 6 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

450 MHz frequency

s212insertion power gain f = 450 MHz

ICC(tot) = 2 mA - 15.5 - dB

ICC(tot) = 3 mA - 18.5 - dB

ICC(tot) = 6 mA - 23.0 - dB

ICC(tot) = 10 mA - 26.0 - dB

ICC(tot) = 20 mA - 29.0 - dB

MSG maximum stable gain f = 450 MHz

ICC(tot) = 2 mA - 22.5 - dB

ICC(tot) = 3 mA - 24.5 - dB

ICC(tot) = 6 mA - 27.0 - dB

ICC(tot) = 10 mA - 29.0 - dB

ICC(tot) = 20 mA - 31.0 - dB

NFmin minimum noise figure f = 450 MHz

ICC(tot) = 2 mA - 0.8 - dB

ICC(tot) = 3 mA - 0.7 - dB

ICC(tot) = 6 mA - 0.8 - dB

ICC(tot) = 10 mA - 0.8 - dB

ICC(tot) = 20 mA - 1.0 - dB

PL(1dB) output power at 1 dB gain compression f = 450 MHz

ICC(tot) = 2 mA - 7.0 - dBm

ICC(tot) = 3 mA - 5.0 - dBm

ICC(tot) = 6 mA - 0.5 - dBm

ICC(tot) = 10 mA - 3.0 - dBm

ICC(tot) = 20 mA - 9.0 - dBm

IP3Ooutput third-order intercept point f = 450 MHz

ICC(tot) = 2 mA - 3.0 - dBm

ICC(tot) = 3 mA - 5.5 - dBm

ICC(tot) = 6 mA - 10.5 - dBm

ICC(tot) = 10 mA - 14.5 - dBm

ICC(tot) = 20 mA - 19.5 - dBm

Table 8. Dynamic characteristics …continued

Tamb =25



C; VCC = 3.0 V; VENABLE



1.2 V unless otherwise specified. All measurements done on

characterization board without matching, de-embedded up to the pins.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 3 — 13 July 2012 7 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

900 MHz frequency

s212insertion power gain f = 900 MHz

ICC(tot) = 2 mA - 14.0 - dB

ICC(tot) = 3 mA - 16.5 - dB

ICC(tot) = 6 mA - 20.5 - dB

ICC(tot) = 10 mA - 23.0 - dB

ICC(tot) = 20 mA - 25.0 - dB

MSG maximum stable gain f = 900 MHz

ICC(tot) = 2 mA - 19.5 - dB

ICC(tot) = 3 mA - 21.5 - dB

ICC(tot) = 6 mA - 24.0 - dB

ICC(tot) = 10 mA - 26.0 - dB

ICC(tot) = 20 mA - 28.0 - dB

NFmin minimum noise figure f = 900 MHz

ICC(tot) = 2 mA - 0.8 - dB

ICC(tot) = 3 mA - 0.8 - dB

ICC(tot) = 6 mA - 0.7 - dB

ICC(tot) = 10 mA - 0.8 - dB

ICC(tot) = 20 mA - 1.0 - dB

PL(1dB) output power at 1 dB gain compression f = 900 MHz

ICC(tot) = 2 mA - 7.5 - dBm

ICC(tot) = 3 mA - 5.5 - dBm

ICC(tot) = 6 mA - 0.5 - dBm

ICC(tot) = 10 mA - 3.5 - dBm

ICC(tot) = 20 mA - 10.0 - dBm

IP3Ooutput third-order intercept point f = 900 MHz

ICC(tot) = 2 mA - 3.5 - dBm

ICC(tot) = 3 mA - 6.0 - dBm

ICC(tot) = 6 mA - 11.5 - dBm

ICC(tot) = 10 mA - 15.0 - dBm

ICC(tot) = 20 mA - 21.0 - dBm

Table 8. Dynamic characteristics …continued

Tamb =25



C; VCC = 3.0 V; VENABLE



1.2 V unless otherwise specified. All measurements done on

characterization board without matching, de-embedded up to the pins.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 3 — 13 July 2012 8 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

1500 MHz frequency

s212insertion power gain f = 1500 MHz

ICC(tot) = 2 mA - 11.5 - dB

ICC(tot) = 3 mA - 14.0 - dB

ICC(tot) = 6 mA - 17.5 - dB

ICC(tot) = 10 mA - 19.5 - dB

ICC(tot) = 20 mA - 21.0 - dB

MSG maximum stable gain f = 1500 MHz

ICC(tot) = 2 mA - 18.0 - dB

ICC(tot) = 3 mA - 19.5 - dB

ICC(tot) = 6 mA - 22.0 - dB

ICC(tot) = 10 mA - 24.0 - dB

ICC(tot) = 20 mA - 25.5 - dB

NFmin minimum noise figure f = 1500 MHz

ICC(tot) = 2 mA - 1.0 - dB

ICC(tot) = 3 mA - 1.0 - dB

ICC(tot) = 6 mA - 0.9 - dB

ICC(tot) = 10 mA - 0.9 - dB

ICC(tot) = 20 mA - 1.0 - dB

PL(1dB) output power at 1 dB gain compression f = 1500 MHz

ICC(tot) = 2 mA - 7.5 - dBm

ICC(tot) = 3 mA - 5.5 - dBm

ICC(tot) = 6 mA - 0.0 - dBm

ICC(tot) = 10 mA - 4.0 - dBm

ICC(tot) = 20 mA - 10.5 - dBm

IP3Ooutput third-order intercept point f = 1500 MHz

ICC(tot) = 2 mA - 3.5 - dBm

ICC(tot) = 3 mA - 6.5 - dBm

ICC(tot) = 6 mA - 12.5 - dBm

ICC(tot) = 10 mA - 16.5 - dBm

ICC(tot) = 20 mA - 21.5 - dBm

Table 8. Dynamic characteristics …continued

Tamb =25



C; VCC = 3.0 V; VENABLE



1.2 V unless otherwise specified. All measurements done on

characterization board without matching, de-embedded up to the pins.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 3 — 13 July 2012 9 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

1900 MHz frequency

s212insertion power gain f = 1900 MHz

ICC(tot) = 2 mA - 10.5 - dB

ICC(tot) = 3 mA - 12.5 - dB

ICC(tot) = 6 mA - 16.0 - dB

ICC(tot) = 10 mA - 17.5 - dB

ICC(tot) = 20 mA - 19.0 - dB

MSG maximum stable gain f = 1900 MHz

ICC(tot) = 2 mA - 17.0 - dB

ICC(tot) = 3 mA - 18.5 - dB

ICC(tot) = 6 mA - 21.5 - dB

ICC(tot) = 10 mA - 23.0 - dB

ICC(tot) = 20 mA - 24.5 - dB

NFmin minimum noise figure f = 1900 MHz

ICC(tot) = 2 mA - 1.1 - dB

ICC(tot) = 3 mA - 1.1 - dB

ICC(tot) = 6 mA - 1.0 - dB

ICC(tot) = 10 mA - 1.0 - dB

ICC(tot) = 20 mA - 1.1 - dB

PL(1dB) output power at 1 dB gain compression f = 1900 MHz

ICC(tot) = 2 mA - 7.5 - dBm

ICC(tot) = 3 mA - 5.5 - dBm

ICC(tot) = 6 mA - 0.0 - dBm

ICC(tot) = 10 mA - 4.5 - dBm

ICC(tot) = 20 mA - 10.5 - dBm

IP3Ooutput third-order intercept point f = 1900 MHz

ICC(tot) = 2 mA - 3.0 - dBm

ICC(tot) = 3 mA - 6.5 - dBm

ICC(tot) = 6 mA - 12.0 - dBm

ICC(tot) = 10 mA - 16.0 - dBm

ICC(tot) = 20 mA - 21 - dBm

Table 8. Dynamic characteristics …continued

Tamb =25



C; VCC = 3.0 V; VENABLE



1.2 V unless otherwise specified. All measurements done on

characterization board without matching, de-embedded up to the pins.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 3 — 13 July 2012 10 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

2400 MHz frequency

s212insertion power gain f = 2400 MHz

ICC(tot) = 2 mA - 8.5 - dB

ICC(tot) = 3 mA - 11.0 - dB

ICC(tot) = 6 mA - 14.0 - dB

ICC(tot) = 10 mA - 15.5 - dB

ICC(tot) = 20 mA - 17.0 - dB

MSG maximum stable gain f = 2400 MHz

ICC(tot) = 2 mA - 16.5 - dB

ICC(tot) = 3 mA - 18.0 - dB

ICC(tot) = 6 mA - 20.5 - dB

ICC(tot) = 10 mA - 22.0 - dB

ICC(tot) = 20 mA - 23.0 - dB

NFmin minimum noise figure f = 2400 MHz

ICC(tot) = 2 mA - 1.5 - dB

ICC(tot) = 3 mA - 1.3 - dB

ICC(tot) = 6 mA - 1.2 - dB

ICC(tot) = 10 mA - 1.2 - dB

ICC(tot) = 20 mA - 1.3 - dB

PL(1dB) output power at 1 dB gain compression f = 2400 MHz

ICC(tot) = 2 mA - 7.5 - dBm

ICC(tot) = 3 mA - 5.0 - dBm

ICC(tot) = 6 mA - 0.0 - dBm

ICC(tot) = 10 mA - 4.5 - dBm

ICC(tot) = 20 mA - 10.5 - dBm

IP3Ooutput third-order intercept point f = 2400 MHz

ICC(tot) = 2 mA - 2.5 - dBm

ICC(tot) = 3 mA - 6.0 - dBm

ICC(tot) = 6 mA - 11.5 - dBm

ICC(tot) = 10 mA - 16.0 - dBm

ICC(tot) = 20 mA - 20.0 - dBm

Table 8. Dynamic characteristics …continued

Tamb =25



C; VCC = 3.0 V; VENABLE



1.2 V unless otherwise specified. All measurements done on

characterization board without matching, de-embedded up to the pins.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 3 — 13 July 2012 11 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

3500 MHz frequency

s212insertion power gain f = 3500 MHz

ICC(tot) = 2 mA - 5.5 - dB

ICC(tot) = 3 mA - 7.5 - dB

ICC(tot) = 6 mA - 10.5 - dB

ICC(tot) = 10 mA - 12.0 - dB

ICC(tot) = 20 mA - 13.5 - dB

MSG maximum stable gain f = 3500 MHz

ICC(tot) = 2 mA - 16.0 - dB

ICC(tot) = 3 mA - 17.5 - dB

ICC(tot) = 6 mA - 19.0 - dB

ICC(tot) = 10 mA - 18.5 - dB

ICC(tot) = 20 mA - 18.5 - dB

NFmin minimum noise figure f = 3500 MHz

ICC(tot) = 2 mA - 2.3 - dB

ICC(tot) = 3 mA - 2.2 - dB

ICC(tot) = 6 mA - 1.9 - dB

ICC(tot) = 10 mA - 1.8 - dB

ICC(tot) = 20 mA - 1.9 - dB

PL(1dB) output power at 1 dB gain compression f = 3500 MHz

ICC(tot) = 2 mA - 7.5 - dBm

ICC(tot) = 3 mA - 5.5 - dBm

ICC(tot) = 6 mA - 0.5 - dBm

ICC(tot) = 10 mA - 4.5 - dBm

ICC(tot) = 20 mA - 9.5 - dBm

IP3Ooutput third-order intercept point f = 3500 MHz

ICC(tot) = 2 mA - 2.5 - dBm

ICC(tot) = 3 mA - 6.0 - dBm

ICC(tot) = 6 mA - 11.5 - dBm

ICC(tot) = 10 mA - 16.5 - dBm

ICC(tot) = 20 mA - 20.0 - dBm

Table 8. Dynamic characteristics …continued

Tamb =25



C; VCC = 3.0 V; VENABLE



1.2 V unless otherwise specified. All measurements done on

characterization board without matching, de-embedded up to the pins.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 3 — 13 July 2012 12 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

9. Enable control

Table 9. ENABLE (pin 5)







Tamb



+85



VENABLE (V) State

 0.4 OFF

 1.2 ON

Tamb = 25 C.

(1) VCC = 1.5 V

(2) VCC = 3 V

(3) VCC = 5 V

Tamb = 25 C.

(1) Rbias = OPEN

(2) Rbias = 12 k

(3) Rbias = 4.7 k

(4) Rbias = 2.4 k

Fig 2. Supply current as a function of bias resistor;

typical valu e s Fig 3. Supply current as a function of supply voltage

and control voltage; typical values

aaa-001682

Icc

(mA)

Rbias (Ω)

10 105

104

102103

(3)(3)(2)(2)

(1)

VCC, Vctrl (V)

165342

aaa-001683

ICC

(mA)

(4)(4)

(3)(3)

(2)(2)

(1)

Product data sheet Rev. 3 — 13 July 2012 13 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

Tamb = 25 C; VCC = 3 V; Pi=30 dBm.

(1) f = 150 MHz

(2) f = 450 MHz

(3) f = 900 MHz

(4) f = 1500 MHz

(5) f = 1900 MHz

(6) f = 2400 MHz

(7) f = 3500 MHz

Tamb = 25 C; f1=900MHz; f

2= 900.2 MHz;

Pi=30 dBm.

(1) VCC = 1.5 V

(2) VCC = 3 V

(3) VCC = 5 V

Fig 4. Insertion po wer gain (s212) as a function of

total supply current; typical values Fig 5. Output third-order intercept point as a function

of total supply current; typical values

aaa-001684

Icc(tot) (mA)

024168

lS21l2

(dB)

(3)(3)

(7)(7)

(2)(2)

(1)

(6)(6)

(5)(5)

(4)(4)

ICC (tot) (mA)

0403010 20

aaa-001685

-5

IP3O

(dBm)

-10

(3)

(2)

(1)

Product data sheet Rev. 3 — 13 July 2012 14 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

Tamb = 25 C; f = 900 MHz.

(1) VCC = 1.5 V

(2) VCC = 3 V

(3) VCC = 5 V

Tamb = 25 C; ICC(tot) = 3 mA; VCC = 3 V; Pi=30 dBm.

Fig 6. Output pow er at 1 dB ga in c ompression as a

function of total supply current; typical values Fig 7. Insertion power gain (s212) as a function of

frequency; typical values

ICC(tot) (mA)

0403010 20

aaa-001686

PL(1dB)

(dBm)

-15

-10

-5

(3)(3)

(2)(2)

(1)

f (MHz)

0 400030001000 2000

aaa-001687

lS21l2

(dB)

Tamb = 25 C; ICC(tot) = 3 mA; VCC = 3 V.

Fig 8. Minimum noise figure as a func tion of frequency; typical values

aaa-001688

NFmin

(dB)

f (MHz)

0 400030001000 2000

Product data sheet Rev. 3 — 13 July 2012 15 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

10. Application information

Other applications available. Please contact your local sales representative for more

information. Application note(s) available on the NXP web site.

All measurements are done with the SAM connector as reference plane.

10.1 High-ohmic FM radio characteristics

[1] See application note AN11091 for details.

10.2 50 ohm FM radio characteristics

[1] See application note AN11090 for details.

Table 10. AC characteristics[1]

Tamb =25



C; VCC = 3.0 V; ICC(tot) = 3.1 mA; f = 100 MHz; measurements done on high-ohmic FM

radio application board.

Symbol Parameter Conditions Min Typ Max Unit

s212insertion power gain - 13 - dB

RLin input return loss - 1 - dB

RLout output return loss - 20 - dB

NF noise figure ZS = 50 -1.0- dB

Pi(1dB) input power at 1 dB gain compression - 23 - dBm

IP3Iinput third-order intercept point - 15 - dBm

Table 11. AC characteristics[1]

Tamb =25



C; VCC = 2.8 V; ICC(tot) = 4.3 mA; f = 100 MHz; measurements done on 50



application board.

Symbol Parameter Conditions Min Typ Max Unit

s212insertion power gain - 15 - dB

RLin input return loss - 10 - dB

RLout output return loss - 14 - dB

NF noise figure ZS = 50 -1.31.8dB

Pi(1dB) input power at 1 dB gain compression - 20 - dBm

IP3Iinput third-order intercept point - 12 - dBm

Product data sheet Rev. 3 — 13 July 2012 16 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

11. Package outline

Fig 9. Package outline SOT1209

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT1209

sot1209_po

11-06-10

11-09-15

Unit

max

nom

min

1.9 1.0

0.5 1.7

Dimensions

Note

1. Dimension A is including plating thickness.

HXSON6: plastic thermal enhanced super thin small outline package; no leads;

6 terminals; body 2 x 1.3 x 0.35 mm SOT1209

A1b

0.15

1.0

1E2ee

0.15

0.35 0.04 2.1 1.20.25 0.25

scale

0 1.5 mm

detail X

shape

optional (6×)

shape

optional (4×)

E2E1

terminal 1

index area

terminal 1

index area

1.2

1.4

1.2

1.4

Product data sheet Rev. 3 — 13 July 2012 17 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

12. Abbreviations

13. Revision history

Table 12. Abbreviations

Acronym Description

AMR Automated Meter Reading

CMMB China Mobile Multimedia Broadcasting

ESD ElectroStatic Discharge

FM Frequency Modulation

ISM Industrial Scientific Medical

LNA Low-Noise Amplifier

MMIC Monolithic Microwave Integrate d Circuit

RKE Remot e Keyless Entry

TPMS Tire-Pressure Monitoring System

WLAN Wireless Local Area Network

Table 13. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BGU6102 v.3 20120713 Product data sheet - BGU6102 v.2

Modifications: •Table 3 on page 2: swapped the descriptions of OM7809 and OM7810.

•Table 5 on page 3: changed the layout in order to remove the white gap on the next page

and to reduce the page count with one page.

BGU6102 v.2 20120203 Product data sheet - BGU6102 v.1

BGU6102 v.1 20110921 Preliminary data sheet - -

Product data sheet Rev. 3 — 13 July 2012 18 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

14. Legal information

14.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

14.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full informatio n see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificat ion — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

14.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors pro duct can reasonably be expected

to result in perso nal injury, death or severe property or environment al

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with t heir

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessa ry

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property right s.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the obj ective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 3 — 13 July 2012 19 of 20

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It i s neit her qua lif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applicati ons.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

14.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

15. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BGU6102

Wideband silicon low-noise amplifier MMIC

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 13 July 2012

Document identifier : BGU6102

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

16. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

2.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 3

8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 4

9 Enable control . . . . . . . . . . . . . . . . . . . . . . . . . 12

10 Application information. . . . . . . . . . . . . . . . . . 15

10.1 High-ohmic FM radio characteristics . . . . . . . 15

10.2 50 ohm FM radio characteristics. . . . . . . . . . . 15

11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16

12 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 17

13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17

14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18

14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18

14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 18

14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19

15 Contact information. . . . . . . . . . . . . . . . . . . . . 19

16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20