© Semiconductor Components Industries, LLC, 2011
April, 2011 Rev. 4
1Publication Order Number:
2N7002W/D
2N7002W
Small Signal MOSFET
60 V, 340 mA, Single, NChannel, SC70
Features
ESD Protected
Low RDS(on)
Small Footprint Surface Mount Package
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Low Side Load Switch
Level Shift Circuits
DCDC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating Symbol Value Unit
DraintoSource Voltage VDSS 60 V
GatetoSource Voltage VGS ±20 V
Drain Current (Note 1)
Steady State TA = 25°C
TA = 85°C
t < 5 s TA = 25°C
TA = 85°C
ID310
220
340
240
mA
Power Dissipation (Note 1)
Steady State
t < 5 s
PD280
330
mW
Pulsed Drain Current (tp = 10 ms) IDM 1.4 A
Operating Junction and Storage
Temperature Range
TJ, TSTG 55 to
+150
°C
Source Current (Body Diode) IS250 mA
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
TL260 °C
GateSource ESD Rating
(HBM, Method 3015)
ESD 900 V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
JunctiontoAmbient Steady State
(Note 1)
RqJA 450 °C/W
JunctiontoAmbient t 5 s (Note 1) RqJA 375
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
Device Package Shipping
ORDERING INFORMATION
2N7002WT1G 3000/Tape & Reel
SIMPLIFIED SCHEMATIC
SC70/SOT323
CASE 419
STYLE 8
71 MG
G
71 = Device Code
M = Date Code
G= PbFree Package
MARKING DIAGRAM
& PIN ASSIGNMENT
3
21
Drain
Gate Source
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SC70
(PbFree)
60 V 1.6 W @ 10 V
RDS(on) MAX
340 mA
ID MAX
(Note 1)
V(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2.5 W @ 4.5 V
Gate
Source
Drain
3
2
1
(Top View)
(Note: Microdot may be in either location)
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ71 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 60 V
TJ = 25°C 1.0 mA
TJ = 150°C 15 mA
VGS = 0 V,
VDS = 50 V
TJ = 25°C 100 nA
TJ = 150°C 10 mA
GatetoSource Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±10 mA
VDS = 0 V, VGS = ±10 V 450 nA
VDS = 0 V, VGS = ±5.0 V 150 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.0 2.5 V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ4.0 mV/°C
DraintoSource On Resistance RDS(on) VGS = 10 V, ID = 500 mA 1.19 1.6 W
VGS = 4.5 V, ID = 200 mA 1.33 2.5
Forward Transconductance gFS VDS = 5 V, ID = 200 mA 530 mS
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz,
VDS = 20 V
24.5 pF
Output Capacitance COSS 4.2
Reverse Transfer Capacitance CRSS 2.2
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 10 V;
ID = 200 mA
0.7 nC
Threshold Gate Charge QG(TH) 0.1
GatetoSource Charge QGS 0.3
GatetoDrain Charge QGD 0.1
SWITCHING CHARACTERISTICS, VGS = V (Note 3)
TurnOn Delay Time td(ON)
VGS = 10 V, VDD = 25 V,
ID = 500 mA, RG = 25 W
12.2 ns
Rise Time tr9.0
TurnOff Delay Time td(OFF) 55.8
Fall Time tf29
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 200 mA
TJ = 25°C 0.8 1.2 V
TJ = 85°C 0.7
2. Pulse Test: pulse width 300 ms, duty cycle 2%
3. Switching characteristics are independent of operating junction temperatures
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3
TYPICAL CHARACTERISTICS
5.0 V
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
VDS, DRAINTOSOURCE VOLTAGE (V) VGS, GATETOSOURCE VOLTAGE (V)
6420
0
0.4
0.8
1.2
1.6
6420
0
0.4
0.8
1.2
Figure 3. OnResistance vs. Drain Current and
Temperature
Figure 4. OnResistance vs. Drain Current and
Temperature
ID, DRAIN CURRENT (A)
1.21.00.80.60.40.20
0
0.4
0.8
1.2
1.6
2.0
3.2
Figure 5. OnResistance vs. GatetoSource
Voltage
Figure 6. OnResistance Variation with
Temperature
VGS, GATETOSOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
108642
0.4
0.8
1.6
2.4
12510075502502550
0.6
1.0
1.4
1.8
2.2
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAINTOSOURCE RESISTANCE (W)RDS(on), DRAINTOSOURCE RESISTANCE (W)
RDS(on), DRAINTOSOURCE
RESISTANCE (NORMALIZED)
VGS = 10 V
7.0 V
8.0 V
9.0 V 4.5 V
4.0 V
6.0 V
3.5 V
3.0 V
2.5 V
TJ = 55°C
TJ = 125°C
TJ = 25°C
TJ = 55°C
TJ = 125°C
TJ = 25°C
TJ = 85°C
VGS = 4.5 V
ID, DRAIN CURRENT (A)
1.21.00.80.60.40.20
0
0.8
1.6
2.4
3.2
RDS(on), DRAINTOSOURCE RESISTANCE (W)
TJ = 55°C
TJ = 125°C
TJ = 25°C
TJ = 85°C
VGS = 10 V
ID = 500 mA
ID = 200 mA
150
ID = 0.2 A
VGS = 4.5 V
VGS = 10 V
1.2
2.0
2.4
2.8
0.4
1.2
2.0
2.8
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4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
Qg, TOTAL GATE CHARGE (nC)
0.
8
0.60.40.20
0
1
2
3
4
5
Figure 9. Diode Forward Voltage vs. Current
VSD, SOURCETODRAIN VOLTAGE (V)
1.21.00.80.60.4
0.01
1
10
VGS, GATETOSOURCE VOLTAGE (V)
IS, SOURCE CURRENT (A)
TJ = 25°C
ID = 0.2 A
201612840
0
10
20
30
C, CAPACITANCE (pF)
Ciss
Coss
Crss
TJ = 25°C
VGS = 0 V
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (V)
TJ = 25°CTJ = 85°C
VGS = 0 V
0.1
1.0E10
1.0E9
1.0E8
1.0E6
5 1015202530
Figure 10. DraintoSource Leakage Current
vs. Voltage
VDS, DRAINTOSOURCE VOLTAGE (V)
IDSS, LEAKAGE (A)
VGS = 0 V
TJ = 150°C
TJ = 125°C
TJ = 85°C
35 40 45 50 55 60
1.0E7
TJ = 25°C
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5
PACKAGE DIMENSIONS
SC70 (SOT323)
CASE 41904
ISSUE M
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
HEDIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.7 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.425 REF
0.028 REF
0.026 BSC
0.017 REF
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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2N7002W/D
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