2N7002W Small Signal MOSFET 60 V, 340 mA, Single, N-Channel, SC-70 Features * * * * ESD Protected Low RDS(on) Small Footprint Surface Mount Package These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX (Note 1) 60 V 1.6 W @ 10 V 340 mA Applications * * * * 2.5 W @ 4.5 V Low Side Load Switch Level Shift Circuits DC-DC Converter Portable Applications i.e. DSC, PDA, Cell Phone, etc. SIMPLIFIED SCHEMATIC Gate 1 MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Rating Symbol Value Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGS 20 V Drain Current (Note 1) Steady State t<5s TA = 25C TA = 85C ID TA = 25C TA = 85C 310 220 Drain 2 (Top View) MARKING DIAGRAM & PIN ASSIGNMENT 340 240 Drain 3 PD Pulsed Drain Current (tp = 10 ms) IDM 1.4 A Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 C mW 280 330 71 MG G SC-70/SOT-323 CASE 419 STYLE 8 1 2 Gate Source Current (Body Diode) IS 250 mA Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C ESD 900 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Source mA Power Dissipation (Note 1) Steady State t<5s Gate-Source ESD Rating (HBM, Method 3015) 3 71 = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device 2N7002WT1G Symbol Max Unit Junction-to-Ambient - Steady State (Note 1) RqJA 450 C/W Junction-to-Ambient - t 5 s (Note 1) RqJA 375 Source Package Shipping SC-70 (Pb-Free) 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) (c) Semiconductor Components Industries, LLC, 2011 April, 2011 - Rev. 4 1 Publication Order Number: 2N7002W/D 2N7002W ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Units OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS V 71 mV/C VGS = 0 V, VDS = 60 V TJ = 25C 1.0 mA TJ = 150C 15 mA VGS = 0 V, VDS = 50 V TJ = 25C 100 nA TJ = 150C 10 mA VDS = 0 V, VGS = 20 V 10 mA VDS = 0 V, VGS = 10 V 450 nA VDS = 0 V, VGS = 5.0 V 150 nA 2.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance RDS(on) Forward Transconductance gFS VGS = VDS, ID = 250 mA 1.0 4.0 mV/C VGS = 10 V, ID = 500 mA 1.19 1.6 VGS = 4.5 V, ID = 200 mA 1.33 2.5 VDS = 5 V, ID = 200 mA 530 mS 24.5 pF W CHARGES AND CAPACITANCES CISS Input Capacitance Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD VGS = 0 V, f = 1 MHz, VDS = 20 V 4.2 2.2 nC 0.7 VGS = 4.5 V, VDS = 10 V; ID = 200 mA 0.1 0.3 0.1 SWITCHING CHARACTERISTICS, VGS = V (Note 3) Turn-On Delay Time td(ON) Rise Time Turn-Off Delay Time tr td(OFF) Fall Time ns 12.2 VGS = 10 V, VDD = 25 V, ID = 500 mA, RG = 25 W tf 9.0 55.8 29 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA 2. Pulse Test: pulse width 300 ms, duty cycle 2% 3. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 TJ = 25C 0.8 TJ = 85C 0.7 1.2 V 2N7002W TYPICAL CHARACTERISTICS 9.0 V 8.0 V 7.0 V 6.0 V 1.2 1.2 5.0 V 4.5 V VGS = 10 V 4.0 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.6 3.5 V 0.8 3.0 V 0.4 0.8 TJ = 25C 0.4 2.5 V 0 2 4 0 6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) TJ = 125C TJ = 85C TJ = 25C 2.0 1.6 TJ = -55C 1.2 0.8 0.4 0.2 0.4 0.6 0.8 1.0 1.2 6 3.2 VGS = 10 V 2.8 2.4 TJ = 125C 2.0 TJ = 85C 1.6 TJ = 25C 1.2 TJ = -55C 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Drain Current and Temperature Figure 4. On-Resistance vs. Drain Current and Temperature 2.4 2.2 2.0 ID = 500 mA 1.6 ID = 200 mA 1.2 0.8 0.4 4 Figure 2. Transfer Characteristics VGS = 4.5 V 0 2 Figure 1. On-Region Characteristics 2.4 0 0 TJ = -55C VGS, GATE-TO-SOURCE VOLTAGE (V) 3.2 2.8 TJ = 125C VDS, DRAIN-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 2 4 6 8 ID = 0.2 A 1.8 VGS = 10 V 1.4 1.0 0.6 -50 10 VGS = 4.5 V -25 0 25 50 75 100 125 VGS, GATE-TO-SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 5. On-Resistance vs. Gate-to-Source Voltage Figure 6. On-Resistance Variation with Temperature http://onsemi.com 3 150 2N7002W TYPICAL CHARACTERISTICS VGS, GATE-TO-SOURCE VOLTAGE (V) 30 C, CAPACITANCE (pF) Ciss 20 TJ = 25C VGS = 0 V Coss 10 0 Crss 0 4 8 12 16 20 5 TJ = 25C ID = 0.2 A 4 3 2 1 0 0 0.4 0.6 0.8 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1.0E-6 10 VGS = 0 V IDSS, LEAKAGE (A) VGS = 0 V IS, SOURCE CURRENT (A) 0.2 1 TJ = 85C TJ = 25C 0.1 TJ = 150C 1.0E-7 TJ = 125C 1.0E-8 TJ = 85C 1.0E-9 TJ = 25C 0.01 0.4 0.6 0.8 1.0 1.0E-10 1.2 5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) 10 15 20 25 30 35 40 45 50 55 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Figure 10. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 60 2N7002W PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419-04 ISSUE M D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 2 b e A 0.05 (0.002) c A2 L A1 DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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