Parameter Max. Units
VDS Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -11.5
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -9.2 A
IDM Pulsed Drain Current -46
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 20 mW/°C
VGS Gate-to-Source Voltage ±8 V
TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C
HEXFET® Power MOSFET
Absolute Maximum Ratings
W
Top View
8
1
2
3
45
6
7
D
D
DG
S
A
D
S
S
SO-8
IRF7420PbF-1
Features Benefits
Industry-standard pinout SO-8 Package ⇒Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant, Halogen-Free Environmentally Friendlier
MSL1, Industrial qualification Increased Reliability
Parameter Max. Units
RθJA Maximum Junction-to-Ambient50 °C/W
Thermal Resistance
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014
Form Quantity
Tube/Bulk 95 IRF7420PbF-1
Tape and Reel 4000 IRF7420TRPbF-1
Package Type
Standard Pack
Orderable Part Number
IRF7420PbF-1 SO-8
Base Part Number
V
DS
-12 V
R
DS(on) max
(@V
GS
= -4.5V)
14 mΩ
R
DS(on) max
(@V
GS
= -2.5V)
17.5 mΩ
R
DS(on) max
(@V
GS
= -1.8V)
26 mΩ
Q
g (typical)
38 nC
I
D
(@T
A
= 25°C)
-11.5 A
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014
IRF7420PbF-1
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
trr Reverse Recovery Time ––– 62 93 ns TJ = 25°C, IF = -2.5A
Qrr Reverse Recovery Charge ––– 61 92 μC di/dt = -100A/μs
Source-Drain Ratings and Characteristics
A
-46



-2.5

S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Surface mounted on 1 in square Cu board, t ≤ 10sec.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250μA
ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient ––– 0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 14 VGS = -4.5V, ID = -11.5A
 ––– 17.5 VGS = -2.5V, ID = -9.8A
 ––– 26 VGS = -1.8V, ID = -8.1A
VGS(th) Gate Threshold Voltage -0.4 ––– -0.9 V VDS = VGS, ID = -250μA
gfs Forward Transconductance 32 ––– ––– S VDS = -10V, ID = -11.5A
––– ––– -1.0 VDS = -9.6V, VGS = 0V
––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8V
QgTotal Gate Charge ––– 38 ––– ID = -11.5A
Qgs Gate-to-Source Charge ––– 8.1 ––– nC VDS = -6V
Qgd Gate-to-Drain ("Miller") Charge ––– 8.7 ––– VGS = -4.5V
td(on) Turn-On Delay Time ––– 8.8 13 VDD = -6V, VGS = -4.5V
trRise Time ––– 8.8 13 ID = -1.0A
td(off) Turn-Off Delay Time ––– 291 437 RD = 6Ω
tfFall Time ––– 225 338 RG = 6Ω
Ciss Input Capacitance ––– 3529 ––– VGS = 0V
Coss Output Capacitance ––– 1013 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 656 ––– ƒ = 1.0MHz
IGSS
μA
mΩ
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014
IRF7420PbF-1
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-11.5A
0.1
1
10
100
0.5 1.0 1.5 2.0 2.5
V = -10V
20μs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
0.1 110 100
-V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
-ID, Drain-to-Source Current (A)
-1.0V
20μs PULSE WIDTH
Tj = 25°C
VGS
TOP -7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
0.1 110 100
-V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
-1.0V
20μs PULSE WIDTH
Tj = 150°C
VGS
TOP -7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014
IRF7420PbF-1
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
010 20 30 40 50
0
1
2
3
4
5
6
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-11.5A
V =-6V
DS
V =-9.6V
DS
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
110 100
-V
DS, Drain-to-Source Voltage (V)
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014
IRF7420PbF-1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
3
6
9
12
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014
IRF7420PbF-1
Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
QG
QGS QGD
VG
Charge
D.U.T. VDS
ID
IG
-3mA
VGS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
0.0 2.0 4.0 6.0 8.0
-VGS, Gate -to -Source Voltage (V)
0.005
0.010
0.015
0.020
0.025
RDS(on)
, Drain-to -Source On Resistance (
Ω)
ID = -11.5A
0.0 10.0 20.0 30.0 40.0 50.0
-ID , Drain Current ( A )
0
0.02
0.04
0.06
0.08
RDS ( on ) , Drain-to-Source On Resistance (
Ω )
VGS = -2.5V
VGS = -1.8V
VGS
= -4.5V
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014
IRF7420PbF-1
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-VGS(th)
( V )
ID = -250μA
Fig 16. Typical Power Vs. Time
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000
Time (sec)
0
50
100
150
200
250
300
350
400
Power (W)
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014
IRF7420PbF-1
SO-8 Package Outline(Mosfet & Fetky)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BAS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MI N MAX
MI L L I ME T E R SINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BAS IC 0.635 B AS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050] 8X 1.78
[
.070
]
4 . OU T L INE CONF OR MS T O JE DE C OU T L I N E MS - 0 1 2AA.
NOT ES :
1. DIMENS IONING & T OLE RANCING PER AS ME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENS IONS ARE S HOWN IN MIL LIMET E RS [INCHE S ].
5 DIMENS ION DOES NOT INCLUDE MOL D PROT RUS IONS .
6 DIMENS ION DOES NOT INCLUDE MOL D PROT RUS IONS .
MOLD PROT RUSIONS NOT T O E XCE E D 0.25 [.010].
7 DIMENS ION IS THE LENGT H OF LEAD F OR S OLDE RING T O
A S UBS TRAT E.
MOLD PROT RUSIONS NOT T O E XCE E D 0.15 [.006].
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
P = DISGNATES LEAD - FREE
EXAMPLE: THIS IS AN IRF7101 (MOS FET)
F 7101
XXXX
INTERNATIONAL
LOGO
RECTIFIER
PART NUMBER
LOT CODE
PRODUCT (OPTIONAL )
DAT E CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WE E K
A = AS S E MB L Y S I T E CODE
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014
IRF7420PbF-1
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
MS L 1
(per JEDEC
J-S T D-020D
††
)
RoHS c ompliant
Qualification information
†
Qualification level
Industrial
(per JEDEC JESD47F
††
guidelines)
Moisture Sensitivity Level SO-8
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/