fiAMOSPEC PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS ..designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining Voltage- Veeogsus) = 60 V (Min) - TIP110,TIP115 = 80 V (Min) - TIP711,TIP116 - = 100 V (Min) - TIP112,TIP117 * Collector-Emitter Saturation Voltage Voge sat) = 2.5 V (Max.) @1,=2.0A * Monolithic Construction with Built-in Base-Emitter Shunt Resistor MAXIMUM RATINGS NPN PNP TIP110 TIP115 TIP111 TIP116 TIP112 TIP117 2.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 50 WATTS TO-220 Characteristic Symbol | TIP110 | TIP111 | TIP112 | Unit TIP115 | TIP116 | TIP117 Collector-Emitter Voltage Voeo 60 80 100 Vv COliector-Base Voltage Veso 60 80 100 Vv Emitter-Base Voltage Veso 5.0 V Collector Current-Continuous Io 2.0 A -Peak low 4.0 Base Current lb 50 mA Total Power Dissipation @T,= 25C} Pp 50 w Derate above 25C 0.4 werc Operating and Storage Junction Ty. Tste C Temperature Range - 65 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case| Rojc 2.5 C/W FIGURE -1 POWER DERATING Py , POWER DISSIPATIONWWATTS) ono aSRBRGES o 2 50 6 100 Te , TEMPERATURE(C) 125 150 > a iP re Tr 5 PIN 1.BASE 2.COLLECTOR 3.EMNTER 4.COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 14.68 | 15.31 B 9.78 | 10.42 Cc 5.01 6.52 D 13.06 | 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 4.36 H 0.72 0.96 | 4.22 498 J 1.14 1.38 K 2.20 297 L 0.33 O55 M 2.48 2.98 0 3.70 3.90TIP110, TIP111, TIP112 NPN / TIP115, TIP116, TIP117 PNP a ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) Vogo(sus) Vv (lg = 30 mA, Ip = 0) TIP110,TIP115 60 TIP111,TIP116 80 TIP112,TIP117 100 Collector Cutoff Current IcEo mA (Veg = 30 V, 1, =9 ) TIP110,TIP115 2.0 (Vo, = 40V, 1,=0 ) TIP111,TIP116 2.0 (Veg = 50 V, I, = 0 ) TIP112,TIP117 2.0 Collector Cutoff Current lopo mA (Veg = 60V, 1, =O ) TIP110,TIP115 1.0 (Veg = 80V,1,=0 ) TIP111,TIP116 1.0 (Veg = 100 V,I, =O ) TIP112,TIP117 1.0 Emitter Cutoff Current leso mA (Veg = 5.0 V,IQ= 0 ) 2.0 ON CHARACTERISTICS (1) DC Current Gain hFE (Ig = 1.0A, Veg = 4.0V) 1000 (lg =2.0A, Veg = 4.0V) 500 Collector-Emitter Saturation Voltage Voe;sat) Vv (I, = 2.0A, Ip = 8.0 mA) 2.5 Base-Emitter On Voltage Veej(on) V (lg = 2.0 A, Veg = 4.0 V) 2.8 DYNAMIC CHARACTERISTICS Smail-Signal Current Gain Nee (Ig = 0.75 A,Veg= 10 V, f = 1.0 MHz ) 25 Output Capacitance Cop pF (Veg = 10 V, Ip = 0 , f = 0.1 MHz) TIP110,T1P111,TIP112 250 TIP115,TIP116,TIP117 150 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% INTERNAL SCHEMATIC DIAGRAM NPN c PNP TIP110 TIP115 q TIP111 TIP116 i, TIP112, 8 TIP117 Low ew od Lotte I t I ' | | t | | Lut, TIME (us) C,CAPACITANCE(pF) ic , COLLECTOR CURRENT (AMP) FIG-2 SWITCHING TIME TIP110,TIP 111, TIP112 = Veo=30V teOV, OV tartlen, T228C BELonT 02 05 1 2 4 Ic, COLLECTOR CURRENT (AMP) 0.04 04 FIG-4 CAPACITANCES PNP ~ NPN 0.04 01 02 0.5 1 2 5 10 2040 Va, REVERSE VOLTAGE(VOLTS) FIG-6 ACTIVE REGION SAFE OPERATING AREA T,#150% - Second Breakdown Limited = == Thermally United @T,225C - Bonding Wire Limit TIP115 TIP116 TIP117 10 50 100 1 2 5 20 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) TIP110, TIP111, TIP112 NPN / TIP115, TIP116, TIP117 PNP | t, TIME (us) Ic , COLLECTOR CURRENT (AMP) FIG-3 SWITCHING TIME TIP115,TIP116,TIP117 | ts 1 05 lprlea Ty928C 02 0.04 01 02 05 1 2 4 lc , COLLECTOR CURRENT (AMP) FIG-S ACTIVE REGION SAFE OPERATING AREA 40 5.0 2.0 1.0 Tya150% 05 Second Breakdown Limited 02 ~~ Thermally Limited @T,=25C TIP110 TIP111 - Bonding Wire Linit TIP112 0.1 2 5 50 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) 10 20 There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of FIG-5 and 6 is base on Typ9=150 C; Te is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% provided Tex) <150C,At high case temperatures,thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Io-Vce