DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
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August 2015
© Diodes Incorporated
DMP210DUFB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON)
ID
TA = +25°C
-20V
5Ω @ VGS = -4.5V
-200mA
7Ω @ VGS = -2.5V
-170mA
10Ω @ VGS = -1.8V
-140mA
15Ω @ VGS = -1.5V
-50mA
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Ordering Information (Note 4)
Part Number
Case
Packaging
DMP210DUFB4-7
X2-DFN1006-3
3,000/Tape & Reel
DMP210DUFB4-7B
X2-DFN1006-3
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
ESD protected
X2-DFN1006-3
Top View
Internal Schematic
Bottom View
Equivalent Circuit
e4
DS
G
D
S
G
Gate Protection
Diode
DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
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August 2015
© Diodes Incorporated
DMP210DUFB4
Marking Information
DMP210DUFB4-7
DMP210DUFB4-7B
N1 = Part Marking Code
N1
Top View
Dot Denotes Drain Side
N1
N1
N1
N1
N1
N1
Top View
Bar Denotes Gate and Source Side
N1
N1
N1
N1
Top View
Bar Denotes Gate and Source Side
N1
From date code 1527 (YYWW),
this changes to:
DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
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August 2015
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DMP210DUFB4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±10
V
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
-200
-160
mA
Continuous Drain Current (Note 5) VGS = -1.8V
Steady
State
TA = +25°C
TA = +70°C
ID
-140
-110
mA
Pulsed Drain Current TP = 10µs
IDM
-600
mA
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
PD
350
mW
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
357
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
-20
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS


-100
-50
nA
nA
VDS = -16V, VGS = 0V
VDS = -5.0V, VGS = 0V
Gate-Source Leakage
IGSS
100
1
10
nA
µA
µA
VGS = 5.0V, VDS = 0V
VGS = 8.0V, VDS = 0V
VGS = 10.0V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage @TJ = +25°C
VGS(th)
-0.5
-1.0
V
VDS = VGS, ID = -250µA
Gate Threshold Voltage (Note 7) @TJ = 0°C
@TJ = +85°C
@TJ = +100°C
VGS(th)
-0.55

-1.05
V
VDS = VGS, ID = -250µA
-0.40

-0.90
-0.35

-0.85
Static Drain-Source On-Resistance
RDS(ON)
5
Ω
VGS = -4.5V, ID = -100mA
7
VGS = -2.5V, ID = -50mA
10
VGS = -1.8V, ID = -20mA
15
VGS = -1.5V, ID = -10mA

20
VGS = -1.2V, ID = -1mA
Forward Transfer Admittance
|Yfs|
200
mS
VDS = -10V, ID = -200mA
Diode Forward Voltage (Note 5)
VSD
-0.5
-1.2
V
VGS = 0V, IS = -115mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
13.72
175
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
4.01
30
pF
Reverse Transfer Capacitance
Crss
2.34
20
pF
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
td(on)
7.7
nS
VGS = -4.5V, VDD = -15V
ID = -180mA, RG = 2.0Ω
Rise Time
tr
19.3
Turn-Off Delay Time
td(off)
25.9
Fall Time
tf

31.5

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
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DMP210DUFB4
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.5 1 1.5 2 2.5 3 3.5 4
V , DRAIN-SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
DS
I , DRAIN CURRENT (A)
D
V = -4.5V
GS
V = -2.5V
GS
V = -1.8V
GS
V = -1.5V
GS
V = -1.2V
GS
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
I , DRAIN CURRENT (A)
D
V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
V =5.0V
DS
1
10
100
0.001 0.01 0.1 1
I , DRAIN-SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
R ( ) Ave @ V =2.5V
DS(ON) GS
R ( ) Ave @ V =4.5V
DS(ON) GS
R ( ) Ave @ V =1.8V
DS(ON) GS
R ( ) Ave @ V =1.5V
DS(ON) GS
0
1
2
3
4
5
6
7
8
9
10
0 0.1 0.2 0.3 0.4 0.5
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
Ave R (R) @ 25 C
DS(ON)
V =4.5V
GS
Ave R (R) @ 85 C
DS(ON)
Ave R (R) @ 125 C
DS(ON)
Ave R (R) @ 150 C
DS(ON)
Ave R (R) @ -55 C
DS(ON)
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
R , DRAIN-SOURCE ON-RESISTANCE
(Normalized)
DS(ON)
T , JUNCTION TEMPERATURE ( C)
Fig. 5 On-Resisitance Variation with Temperature
J
R ( )
@V =2.5V, I =50mA
DS(ON)
GS D
R ( )
@V =4.5V, I =200mA
DS(ON)
GS D
0
2
4
6
8
10
12
-50 -25 0 25 50 75 100 125 150
R , DRAIN-SOURCE ON-RESISTANCE
(Normalized)
DS(ON)
T , JUNCTION TEMPERATURE ( C)
Fig. 6 On-Resisitance vs.Temperature
J
R ( )
@V =2.5V, I =50mA
DS(ON)
GS D
R ( )
@V =4.5V, I =200mA
DS(ON)
GS D
DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
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August 2015
© Diodes Incorporated
DMP210DUFB4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25 0 25 50 75 100 125 150
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
I = 250 A
D
I = 1mA
D
0
0.2
0.3
0.4
0.5
I , SOURCE CURRENT (A)
S
0 0.2 0.4 0.6 0.8 1 1.2
0.1
V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0.6
T = 25 C
A
1
10
100
0 4 8 12 16 20
f = 1MHz
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C , JUNCTION CAPACITANCE (pF)
T
Ciss
Coss
Crss
0.001 0.01 0.1 1 10 100 1,000
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001
0.001
0.01
0.1
1
r(t), TRANSIENT THERMAL RESISTANCE
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
12
R (t) = r(t) *
JA R
R = 369°C/W
JA
JA
P(pk) t1
t2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
0.1
1
10
100
1,000
10,000
0 2 4 6 8 10 12 14 16 18 20
V , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
I , LEAKAGE CURRENT (nA)
DSS
T =
A-55 C
T =
A25 C
T =
A85 C
T = 150 C
A
DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
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August 2015
© Diodes Incorporated
DMP210DUFB4
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2-DFN1006-3
Dim
Min
Max
Typ
A
0.40
A1
0.00
0.05
0.03
b
0.10
0.20
0.15
b2
0.45
0.55
0.50
D
0.95
1.05
1.00
E
0.55
0.65
0.60
e
-
-
0.35
L1
0.20
0.30
0.25
L2
0.20
0.30
0.25
L3
-
-
0.40
z
0.02
0.08
0.05
All Dimensions in mm
Dimensions
Value (in mm)
C
0.70
G1
0.30
G2
0.20
X
0.40
X1
1.10
Y
0.25
Y1
0.70
L3 L1L2
e
b
D
E
A
z
b2
A1
Seating Plane
Pin #1 ID
C
Y1
X1
X
G2
Y
G1
X2-DFN1006-3
X2-DFN1006-3
DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
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www.diodes.com
August 2015
© Diodes Incorporated
DMP210DUFB4
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