BFR340F Low Noise Silicon Bipolar RF Transistor * General purpose Low Noise Amplifier * Ideal for low current operation 2 3 1 * High breakdown voltage enables operation in automotive applications * Minimum noise figure 1.0 dB @ 1mA,1.5 V,1.9 GHz * Pb-free (RoHS compliant) and halogen-free thin small flat package (1.2 x 1.2 mm2 ) with visible leads * Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR340F Marking FAs Pin Configuration 1=B 2=E 3=C Package TSFP-3 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 20 Base current IB 2 Total power dissipation1) Ptot 75 mW Junction temperature TJ 150 C Storage temperature TStg V mA TS 110C -55 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS Value Unit 530 K/W 1T S is measured on the collector lead at the soldering point to the pcb 2For the definition of R thJS please refer to Application Note AN077 (Thermal 1 Resistance Calculation) 2013-11-06 BFR340F Electrical Characteristics at TA = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 6 9 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Collector-emitter cutoff current nA ICES VCE = 4 V, VBE = 0, TA = 25C - 1 30 VCE = 10 V, VBE = 0, TA = 85C - 2 50 ICBO - 1 30 IEBO - 1 500 hFE 90 120 160 Verified by random sampling Collector-base cutoff current VCB = 4 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 5 mA, VCE = 3 V, pulse measured 2 2013-11-06 BFR340F Electrical Characteristics at TA = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 11 14 - Ccb - 0.21 0.4 Cce - 0.17 - Ceb - 0.11 - AC Characteristics (verified by random sampling) Transition frequency fT GHz IC = 6 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin IC = 3 mA, VCE = 1.5 V, ZS = ZSopt, f = 100 MHz - 0.9 - IC = 1 mA, VCE = 1.5 V, ZS = ZSopt, f = 1.9 GHz - 1 - IC = 1 mA, VCE = 1.5 V, ZS = ZSopt, f = 2.4 GHz - 1.2 - 3 2013-11-06 BFR340F Electrical Characteristics at TA = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics (verified by random sampling) Maximum power gain1) dB Gmax IC = 3 mA, VCE = 1.5 V, ZS = ZSopt, ZL = Z Lopt , - 28 - f = 1.8 GHz - 16.5 - f = 3 GHz - 13 - f = 100 MHz IC = 5 mA, VCE = 3 V, ZS = ZSopt, ZL = Z Lopt, |S21e|2 Transducer gain dB IC = 3 mA, VCE = 1.5 V, ZS = ZL = 50 , - 19 - f = 1.8 GHz - 14 - f = 3 GHz - 10 - f = 100 MHz IC = 5 mA, VCE = 3 V, ZS = ZL = 50 , Third order intercept point at output2) IP3 dBm VCE = 3 V, IC = 5 mA, f = 100 MHz, ZS = ZL = 50 VCE = 3 V, IC = 5 mA, f = 1.8 GHz, - 14 - ZS = ZL = 50 - 13 - VCE = 3V, IC = 5 mA, ZS = ZL = 50, f = 100 MHz - -3 - VCE = 3V, IC = 5 mA, ZS = ZL = 50, f = 1.8 GHz - -1 - 1dB compression point at output 1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms 2IP3 value depends on termination of P-1dB = |S21e / S12e| all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 4 2013-11-06 BFR340F Total power dissipation P tot = (TS) Collector-base capacitance Ccb = (VCB ) f = 1MHz 80 0.4 V pF 0.3 Ccb 60 50 0.25 40 0.2 30 0.15 20 0.1 10 0.05 0 0 15 30 45 60 90 105 120 A 75 0 0 150 2 4 6 8 10 V 12 16 VCB Third order Intercept Point IP3=(IC) Transition frequency fT= (IC) (Output, ZS=ZL=50) f = 1GHz VCE = parameter, f = 1.9GHz VCE = parameter 16 28 dBm GHz 20 5V 12 3V 12 fT IP3 16 10 2V 8 8 4 1V 5V 3V 2.5V 2V 1.5V 1V 0 -4 -8 6 0.75V 4 2 -12 -16 0 2 4 6 8 mA 0 0 11 2 4 6 8 mA 12 IC IC 5 2013-11-06 BFR340F Power gain Gma, Gms = (IC) Power Gain Gma, Gms = (f) f = 1.8GHz VCE = parameter VCE = parameter 20 45 Ic=5mA dB mA 5V 3V 16 35 G G 2V 14 20 0.75V 10 15 8 6 0 5V 3V 2V 1V 0.75V 25 1V 12 30 10 2 4 6 mA 8 5 0 12 0.5 1 1.5 2 2.5 3 IC GHz 4 f Insertion Power Gain |S21| = (f) Power Gain Gma, Gms = (VCE ): |S21| = (VCE): - - - - VCE = parameter f = parameter 24 dB 22 dB Ic=5mA Ic = 5mA 0.9GHz 20 20 19 16 16 12 15 8 6 4 0 1.8GHz 17 14 10 0.9GHz 18 G G 18 1.8GHz 14 5V 3V 2V 1V 0.75V 13 12 11 0.5 1 1.5 2 2.5 3 GHz 10 0 4 1 2 3 4 5 6 V 8 VCE f 6 2013-11-06 BFR340F Power gain Gma, Gms = (IC) Noise figure F = (IC ) VCE = 3V VCE = 1.5V, ZS = ZSopt f = parameter 24 dB 0.9GHz 20 18 G 1.8GHz 16 14 2.4GHz 12 3GHz 10 4GHz 8 6 4 0 2 4 6 8 10 mA 14 IC Third order Intercept Point IP3=(IC) Noise figure F = (IC ) VCE = 1.5V, f = 1.9GHz (Output, ZS=ZL=50) VCE = parameter, f = 100MHz 28 dBm 20 IP3 16 12 8 5V 3V 2.5V 2V 1.5V 1V 4 0 -4 -8 -12 -16 0 2 4 6 8 mA 11 IC 7 2013-11-06 BFR340F Noise figure F = (f) Source impedance for min. VCE = 1.5V, ZS=ZSopt, IC=Parameter noise figure vs. frequency VCE = 1.5V, IC =Parameter 8 2013-11-06 BFR340F SPICE GP Model For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFR340F SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFR340F SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. 9 2013-11-06 Package TSFP-3 10 BFR340F 2013-11-06 BFR340F Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2013-11-06