2013-11-06
1
BFR340F
3
1
2
Low Noise Silicon Bipolar RF Transistor
• General purpose Low Noise Amplifier
• Ideal for low current operation
• High breakdown voltage enables
operation in automotive applications
• Minimum noise figure 1.0 dB @ 1mA,1.5 V,1.9 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package (1.2 x 1.2 mm2 ) with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR340F FAs 1 = B 2 = E 3 = C TSFP-3
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 6 V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 2
Collector current IC20 mA
Base current IB2
Total power dissipation1)
TS ≤ 110°C
Ptot 75 mW
Junction temperature TJ150 °C
Storage temperature TSt
g
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS 530 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFR340F
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 6 9 - V
Collector-emitter cutoff current
VCE = 4 V, VBE = 0, TA = 25°C
VCE = 10 V, VBE = 0, TA = 85°C
Verified by random sampling
ICES
-
-
1
2
30
50
nA
Collector-base cutoff current
VCB = 4 V, IE = 0
ICBO - 1 30
Emitter-base cutoff current
VEB = 1 V, IC = 0
IEBO - 1 500
DC current gain
IC = 5 mA, VCE = 3 V, pulse measured
hFE 90 120 160 -
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BFR340F
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 6 mA, VCE = 3 V, f = 1 GHz
fT11 14 - GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.21 0.4 pF
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.17 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.11 -
Minimum noise figure
IC = 3 mA, VCE = 1.5 V, ZS = ZSopt, f = 100 MHz
IC = 1 mA, VCE = 1.5 V, ZS = ZSopt, f = 1.9 GHz
IC = 1 mA, VCE = 1.5 V, ZS = ZSopt, f = 2.4 GHz
NFmin
-
-
-
0.9
1
1.2
-
-
-
dB
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BFR340F
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Maximum power gain1)
IC = 3 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt ,
f = 100 MHz
IC = 5 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz
f = 3 GHz
Gmax
-
-
-
28
16.5
13
-
-
-
dB
Transducer gain
IC = 3 mA, VCE = 1.5 V, ZS = ZL = 50Ω ,
f = 100 MHz
IC = 5 mA, VCE = 3 V, ZS = ZL = 50Ω ,
f = 1.8 GHz
f = 3 GHz
|S21e|2
-
-
-
19
14
10
-
-
-
dB
Third order intercept point at output2)
VCE = 3 V, IC = 5 mA, f = 100 MHz,
ZS = ZL = 50Ω
VCE = 3 V, IC = 5 mA, f = 1.8 GHz,
ZS = ZL = 50Ω
IP3
-
-
14
13
-
-
dBm
1dB compression point at output
VCE = 3V, IC = 5 mA, ZS = ZL = 50Ω, f = 100 MHz
VCE = 3V, IC = 5 mA, ZS = ZL = 50Ω, f = 1.8 GHz
P-1dB
-
-
-3
-1
-
-
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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BFR340F
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 A150
0
10
20
30
40
50
60
V
80
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 2 4 6 8 10 12 V16
VCB
0
0.05
0.1
0.15
0.2
0.25
0.3
pF
0.4
Ccb
Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50Ω)
VCE = parameter, f = 1.9GHz
02468mA 11
IC
-16
-12
-8
-4
0
4
8
12
16
20
dBm
28
IP3
5V
3V
2.5V
2V
1.5V
1V
Transition frequency fT= ƒ(IC)
f = 1GHz
VCE = parameter
02468mA 12
IC
0
2
4
6
8
10
12
GHz
16
fT
5V
3V
2V
1V
0.75V
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BFR340F
Power gain Gma, Gms = ƒ(IC)
f = 1.8GHz
VCE = parameter
02468mA 12
IC
6
8
10
12
14
16
mA
20
G
5V
3V
2V
1V
0.75V
Power Gain Gma, Gms = ƒ(f)
VCE = parameter
0 0.5 1 1.5 2 2.5 3 GHz 4
f
5
10
15
20
25
30
35
dB
45
G
Ic=5mA
5V
3V
2V
1V
0.75V
Insertion Power Gain |S21|² = ƒ(f)
VCE = parameter
0 0.5 1 1.5 2 2.5 3 GHz 4
f
4
6
8
10
12
14
16
18
20
dB
24
G
Ic=5mA
5V
3V
2V
1V
0.75V
Power Gain Gma, Gms = ƒ(VCE):
|S21|² = ƒ(VCE): - - - -
f = parameter
0 1 2 3 4 5 6 V8
VCE
10
11
12
13
14
15
16
17
18
19
20
dB
22
G
0.9GHz
1.8GHz
0.9GHz
1.8GHz
Ic = 5mA
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BFR340F
Power gain Gma, Gms = ƒ (IC)
VCE = 3V
f = parameter
0 2 4 6 8 10 mA 14
IC
4
6
8
10
12
14
16
18
20
dB
24
G
0.9GHz
1.8GHz
2.4GHz
3GHz
4GHz
Noise figure F = ƒ(IC)
VCE = 1.5V, ZS = ZSopt
Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50Ω)
VCE = parameter, f = 100MHz
02468mA 11
IC
-16
-12
-8
-4
0
4
8
12
16
20
dBm
28
IP3
5V
3V
2.5V
2V
1.5V
1V
Noise figure F = ƒ(IC)
VCE = 1.5V, f = 1.9GHz
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BFR340F
Noise figure F = ƒ(f)
VCE = 1.5V, ZS=ZSopt, IC=Parameter
Source impedance for min.
noise figure vs. frequency
VCE = 1.5V, IC=Parameter
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BFR340F
SPICE GP Model
For the SPICE Gummel Poon (GP) model as well as for the S-parameters
(including noise parameters) please refer to our internet website
www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design. You find the BFR340F SPICE GP model in the internet
in MWO- and ADS-format, which you can import into these circuit simulation tools
very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the
model circuit correspond to the pin configuration of the device. The model
parameters have been extracted and verified up to 10 GHz using typical devices.
The BFR340F SPICE GP model reflects the typical DC- and RF-performance
within the limitations which are given by the SPICE GP model itself. Besides the DC
characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise)
and intermodulation have been extracted.
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BFR340F
Package TSFP-3
2013-11-06
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BFR340F
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
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