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SUMMARY
V(BR)DSS=20V; RDS(ON)=0.040Ω; ID=5.4A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•Low on-resistance
•Fast switching speed
•Low threshold
•Low gate drive
•Low profile SOIC package
APPLICATIONS
•DC - DC Converters
•Power Management Functions
•Disconnect switches
•Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches) TAPE WIDTH (mm) QUANTITY
PER REEL
ZXM64N02XTA 7 12mm embossed 1000 units
ZXM64N02XTC 13 12mm embossed 4000 units
DEVICE MARKING
•ZXM4N02
20V N-CHANNEL ENHANCEMENT MODE MOSFET
MSOP8
ZXM64N02X
1234
8
7
65
S
S
S
G
D
D
D
D
121
PROVISIONAL ISSUE A - JULY 1999
ZXM64N02X
122
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 113 °C/W
Junction to Ambient (b) RθJA 70 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 20 V
Gate- Source Voltage VGS ± 12 V
Continuous Drain Current (VGS=4.5V; TA=25°C)(b)
(V
GS=4.5V; TA=70°C)(b) ID5.4
4.3 A
Pulsed Drain Current (c) IDM 30 A
Continuous Source Current (Body Diode)(b) IS2.4 A
Pulsed Source Current (Body Diode)(c) ISM 30 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor PD1.1
8.8 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor PD1.8
14.4 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
PROVISIONAL ISSUE A - JULY 1999
ZXM64N02X
0.1 10 100
0.0001 100
0 80 160
VDS - Drain-Source Voltage (V)
Safe Operating Area
Ref Note (a)
100m
1
100
I
D
- Drain Current (A)
D=0.1
D=0.2
Thermal Resistance (°C/W)
80
40
0
Max Power Dissipation (Watts)
2.0
1.0
0
T - Temperature (°C)
Derating Curve
Single Pulse
D=0.5
Themal Resistance (°C/W)
0.0001
01000
60
120
Single Pulse
D=0.5
D=0.2
D=0.1
1
10
0.5
1.5
140120100604020
1010.010.001 1001010.10.010.001
90
30
60
20
0.1
Pulse Width (s)
Transient Thermal Impedance
Refer Note (b)
Pulse Width (s)
Transient Thermal Impedance
Refer Note (a)
Refer Note (b)
Refer Note (a)
TYPICAL CHARACTERISTICS
DC
1s
100ms
10ms
1ms
100us
Refer Note (a)
123
PROVISIONAL ISSUE A - JULY 1999
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 20 V ID=250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS 1µAVDS=20V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS
=± 12V, VDS
=0V
Gate-Source Threshold Voltage VGS(th) 0.7 V ID=250µA, VDS
= VGS
Static Drain-Source On-State Resistance
(1) RDS(on) 0.040
0.050 Ω
ΩVGS
=4.5V, ID=3.8A
VGS
=2.7V, ID=1.9A
Forward Transconductance (3) gfs 6.1 S VDS=10V,ID=1.9A
DYNAMIC (3)
Input Capacitance Ciss 1100 pF VDS=15 V, VGS=0V,
f=1MHz
Output Capacitance Coss 350 pF
Reverse Transfer Capacitance Crss 100 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 5.7 ns
VDD
=10V, ID=3.8A
RG=6.2Ω, RD=2.6Ω
(Refer to test
circuit)
Rise Time tr9.6 ns
Turn-Off Delay Time td(off) 28.3 ns
Fall Time tf11.6 ns
Total Gate Charge Qg16 nC VDS=16V,VGS=4.5V,
ID=3.8A
(Refer to test
circuit)
Gate-Source Charge Qgs 3.5 nC
Gate Drain Charge Qgd 5.4 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.95 V Tj=25°C, IS=3.8A,
VGS
=0V
Reverse Recovery Time (3) trr 23.7 ns Tj=25°C, IF=3.8A,
di/dt= 100A/µs
Reverse Recovery Charge(3) Qrr 13.3 nC
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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ZXM64N02X
PROVISIONAL ISSUE A - JULY 1999
0.1 1 10
1.5 2 3
0.1 1 100 0 1 2
20050-100
0.1 1 10
VDS - Drain-Source Voltage (V)
Output Characteristics
0.1
10
100
I
D
- Drain Current (A)
VGS
2.5V
VDS=10V
I
D
- Drain Current (A)
100
10
0.1
VGS - Gate-Source Voltage (V)
Typical Transfer Characteristics
R
DS(on)
- Drain-Source On-Resistance (Ω)
1
0.1
0.01
ID- Drain Current (A)
On-Resistance v Drain Current
4.5V
I
D
- Drain Current (A)
100
10
VGS
0.1
VDS - Drain-Source Voltage (V)
Output Characteristics
Normalised R
DS(on)
and VGS
(th)
1.6
0.8
0
Tj - Junction Temperature (°C)
Normalised RDS(on) and VGS(th)
v Temperature
I
SD
- Reverse Drain Current (A)
100
1
100m
VSD - Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
T=150°C
T=25°C
+150°C
T=150°C
VGS=4.5V
T=25°C
RDS(on)
ID=3.8A
VGS=VDS
ID=250µA
VGS(th)
10
0.5 1.5
25°C
2.0V
1.5V
3.0V
3.5V
4.0V
4.5V
5.0V
11
3.0V
2.5V
2.0V
1.5V
3.5V
5V
4.0V
2.5
1
1501000-50
0.2
0.4
0.6
1.0
1.2
1.4
10
VGS=2.0V
VGS=2.5V
VGS=4.5V
TYPICAL CHARACTERISTICS
125
ZXM64N02X
PROVISIONAL ISSUE A - JULY 1999
Basic Gate Charge Waveform Gate Charge Test Circuit
Switching Time Waveforms Switching Time Test Circuit
0.1 100 0 8 16
VDS - Drain Source Voltage (V)
Capacitance v Drain-Source Voltage
0
1000
2000
C - Capacitance (pF)
V
GS
- Gate-Source Voltage (V)
6.0
3.0
0
Q -Charge (nC)
Gate-Source Voltage v Gate Charge
Ciss
Coss
Crss
Vgs=0V
f=1Mhz
246 101214
1.0
2.0
4.0
5.0
250
500
750
1250
1500
1750
VDS=16V
ID=3.8A
110
TYPICAL CHARACTERISTICS
ZXM64N02X
126
PROVISIONAL ISSUE A - JULY 1999
ZXM64N02X
H
E
D
e X 6
A
A1
L
C
1234
5678
θ°
B
Conforms to JEDEC MO-187 Iss A
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
128
DIM Millimetres Inches
MIN MAX MIN MAX
A 1.10 0.043
A1 0.05 0.15 0.002 0.006
B 0.25 0.40 0.010 0.016
C 0.13 0.23 0.005 0.009
D 2.90 3.10 0.114 0.122
e 0.65 BSC 0.0256 BSC
E 2.90 3.10 0.114 0.122
H 4.90 BSC 0.193 BSC
L 0.40 0.70 0.016 0.028
q° 0° 6° 0° 6°
Zetex plc.
Fields New Road, Chadde rt on, Oldha m, OL9 -8NP, Unit ed Kingdom .
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 47 Mal l Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide
Germany USA Kwai Fong, Hong Kong Zetex plc 1999
Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611
Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.
PROVISIONAL ISSUE A - JULY 1999
