© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 2
1Publication Order Number:
NVTFS5124PL/D
NVTFS5124PL
Power MOSFET
−60 V, −6 A, 260 mW, Single P−Channel
Features
•Small Footprint (3.3 x 3.3 mm) for Compact Design
•Low RDS(on) to Minimize Conduction Losses
•Low QG and Capacitance to Minimize Driver Losses
•NVTFS5124PLWF − Wettable Flanks Product
•AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS −60 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain Cur-
rent RYJ−mb (Notes 1,
2, 3, 4) Steady
State
Tmb = 25°CID−6.0 A
Tmb = 100°C−4.0
Power Dissipation
RYJ−mb (Notes 1, 2, 3)
Tmb = 25°CPD18 W
Tmb = 100°C 9.0
Continuous Drain Cur-
rent RqJA (Notes 1, 3,
4) Steady
State
TA = 25°CID−2.4 A
TA = 100°C−1.7
Power Dissipation
RqJA (Notes 1, 3)
TA = 25°CPD3.0 W
TA = 100°C 1.5
Pulsed Drain Current TA = 25°C, tp = 10 msIDM −24 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
+175
°C
Source Current (Body Diode) IS−18 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = −50 V, VGS = −10 V,
IL(pk) = −13 A, L = 0.1 mH, RG = 25 W)
EAS 8.5 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Note 2 and 3)
RYJ−mb 8.4 °C/W
Junction−to−Ambient − Steady State (Note 3) RqJA 49.2
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
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V(BR)DSS RDS(on) MAX ID MAX
−60 V
260 mW @ −10 V
−6 A
P−Channel MOSFET
D (5−8)
S (1,2,3)
G (4)
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
380 mW @ −4.5 V
(Note: Microdot may be in either location)
1
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
1
XXXX
AYWWG
G
D
D
D
D
S
S
S
G
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
NVTFS5124PL
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA−60 V
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = −60 V
TJ = 25°C−1.0 mA
TJ = 125°C−10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "20 V "100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA−1.5 −2.5 V
Drain−to−Source On Resistance RDS(on) VGS = −10 V, ID = −3 A 200 260 mW
VGS = −4.5 V, ID = −3 A 290 380
Forward Transconductance gFS VDS = −15 V, ID = −5 A 4 S
CHARGES AND CAPACITANCES
Input Capacitance Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = −25 V
250
pF
Output Capacitance Coss 27
Reverse Transfer Capacitance Crss 17
Total Gate Charge QG(TOT)
VGS = −4.5 V, VDS = −48 V,
ID = −3 A
3.5
nC
Threshold Gate Charge QG(TH) 0.4
Gate−to−Source Charge QGS 1.2
Gate−to−Drain Charge QGD 1.9
Total Gate Charge QG(TOT) VGS = −10 V, VDS = −48 V,
ID = −3 A
6
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time td(on)
VGS = −4.5 V, VDS = −48 V,
ID = −3 A, RG = 2.5 W
7
ns
Rise Time tr14
Turn−Off Delay Time td(off) 13
Fall Time tf10
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = −3 A
TJ = 25°C−0.87 −1.0 V
TJ = 125°C−0.74
Reverse Recovery Time tRR
VGS = 0 V,
dIS/dt = 100 A/ms,
IS = −3 A
17 ns
Charge Time ta14
Discharge Time tb3
Reverse Recovery Charge QRR 19 nC
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
TYPICAL CHARACTERISTICS
0
2
4
6
8
012345
Figure 1. On−Region Characteristics
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
−10 V
TJ = 25°C
VGS = −3 V
−4.5 V
−4.0 V
−3.5 V
0
2
4
6
8
123456
VDS ≥ −10 V
TJ = 25°C
TJ = −55°C
TJ = 125°C
Figure 2. Transfer Characteristics
−VGS, GATE−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
0.10
0.20
0.30
0.40
0.50
246810
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
−VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID = −3 A
TJ = 25°C
0.10
0.20
0.30
0.40
0.50
2 4 6 8 10 12 14
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS = −4.5 V
VGS = −10 V
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
−50 −25 0 25 50 75 100 125 150 175
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VGS = −10 V
ID = −3 A
10
100
1000
10000
10 20 30 40 50 60
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−IDSS, LEAKAGE (nA)
TJ = 125°C
TJ = 150°C
VGS = 0 V
TJ = 25°C
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TYPICAL CHARACTERISTICS
0
100
200
300
0 102030405060
Figure 7. Capacitance Variation
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TJ = 25°C
VGS = 0 V
Ciss
Coss
Crss 0
2
4
6
8
10
0246
Figure 8. Gate−to−Source Voltage vs. Total
Charge
Qg, TOTAL GATE CHARGE (nC)
−VGS, GATE−TO−SOURCE VOLTAGE
(V)
VDS = −48 V
ID = −3 A
TJ = 25°C
QT
Qgs Qgd
1.0
10.0
100.0
1000.0
1 10 100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
RG, GATE RESISTANCE (W)
t, TIME (ns)
td(off)
td(on)
tf
tr
VDD = −48 V
ID = −3 A
VGS = −10 V
0
10
20
30
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
−IS, SOURCE CURRENT (A)
TJ = 25°C
VGS = 0 V
0.1
1
10
100
1000
0.1 1 10 100
VGS = −10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
10 ms
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
Figure 11. Diode Forward Voltage vs. Current
0
2
4
6
8
10
25 50 75 100 125 150 175
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (°C)
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
ID = −13 A
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5
TYPICAL CHARACTERISTICS
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 13. Thermal Response
PULSE TIME (sec)
RqJA(t) (°C/W)
0.1
Duty Cycle = 0.5
0.2
0.05
0.02
0.01
Single Pulse
DEVICE ORDERING INFORMATION
Device Marking Package Shipping†
NVTFS5124PLTAG 5124 WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS5124PLWFTAG 24LW WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS5124PLTWG 5124 WDFN8
(Pb−Free)
5000 / Tape & Reel
NVTFS5124PLWFTWG 24LW WDFN8
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVTFS5124PL
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6
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
M1.40 1.50
q0 −−−
_
1.60
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
1234
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
B
A
0.20 C
0.20 C
2X
2X
DIM MIN NOM
MILLIMETERS
A0.70 0.75
A1 0.00 −−−
b0.23 0.30
c0.15 0.20
D
D1 2.95 3.05
D2 1.98 2.11
E
E1 2.95 3.05
E2 1.47 1.60
e0.65 BSC
G0.30 0.41
K0.65 0.80
L0.30 0.43
L1 0.06 0.13
A
0.10 C
0.10 C
DETAIL A
14
8L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 C
L
DETAIL A
A1
e
6X
c
4X
C
SEATING
PLANE
5
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.95
0.56
0.20
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.650.42
0.75 2.30
3.46
PACKAGE
8X
0.055 0.059
0 −−−
_
0.063
12
_
0.028 0.030
0.000 −−−
0.009 0.012
0.006 0.008
0.116 0.120
0.078 0.083
0.116 0.120
0.058 0.063
0.026 BSC
0.012 0.016
0.026 0.032
0.012 0.017
0.002 0.005
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.037
0.022
0.008
MIN NOM
INCHES
MAX
78
PITCH
3.60
0.57
0.47
OUTLINE
DIMENSION: MILLIMETERS
3.30 BSC
3.30 BSC
0.130 BSC
0.130 BSC
2.37
0.66
4X
E3 0.23 0.30 0.40 0.009 0.012 0.016
E3
4X
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
NVTFS5124PL/D
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