© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 2
1Publication Order Number:
NVTFS5124PL/D
NVTFS5124PL
Power MOSFET
60 V, 6 A, 260 mW, Single PChannel
Features
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVTFS5124PLWF Wettable Flanks Product
AECQ101 Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
DraintoSource Voltage VDSS 60 V
GatetoSource Voltage VGS ±20 V
Continuous Drain Cur-
rent RYJmb (Notes 1,
2, 3, 4) Steady
State
Tmb = 25°CID6.0 A
Tmb = 100°C4.0
Power Dissipation
RYJmb (Notes 1, 2, 3)
Tmb = 25°CPD18 W
Tmb = 100°C 9.0
Continuous Drain Cur-
rent RqJA (Notes 1, 3,
4) Steady
State
TA = 25°CID2.4 A
TA = 100°C1.7
Power Dissipation
RqJA (Notes 1, 3)
TA = 25°CPD3.0 W
TA = 100°C 1.5
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 24 A
Operating Junction and Storage Temperature TJ, Tstg 55 to
+175
°C
Source Current (Body Diode) IS18 A
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 13 A, L = 0.1 mH, RG = 25 W)
EAS 8.5 mJ
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter Symbol Value Unit
JunctiontoMounting Board (top) Steady
State (Note 2 and 3)
RYJmb 8.4 °C/W
JunctiontoAmbient Steady State (Note 3) RqJA 49.2
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD5112 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
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V(BR)DSS RDS(on) MAX ID MAX
60 V
260 mW @ 10 V
6 A
PChannel MOSFET
D (58)
S (1,2,3)
G (4)
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
380 mW @ 4.5 V
(Note: Microdot may be in either location)
1
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= PbFree Package
1
XXXX
AYWWG
G
D
D
D
D
S
S
S
G
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 60 V
TJ = 25°C1.0 mA
TJ = 125°C10
GatetoSource Leakage Current IGSS VDS = 0 V, VGS = "20 V "100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.5 2.5 V
DraintoSource On Resistance RDS(on) VGS = 10 V, ID = 3 A 200 260 mW
VGS = 4.5 V, ID = 3 A 290 380
Forward Transconductance gFS VDS = 15 V, ID = 5 A 4 S
CHARGES AND CAPACITANCES
Input Capacitance Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
250
pF
Output Capacitance Coss 27
Reverse Transfer Capacitance Crss 17
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 48 V,
ID = 3 A
3.5
nC
Threshold Gate Charge QG(TH) 0.4
GatetoSource Charge QGS 1.2
GatetoDrain Charge QGD 1.9
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 48 V,
ID = 3 A
6
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time td(on)
VGS = 4.5 V, VDS = 48 V,
ID = 3 A, RG = 2.5 W
7
ns
Rise Time tr14
TurnOff Delay Time td(off) 13
Fall Time tf10
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 3 A
TJ = 25°C0.87 1.0 V
TJ = 125°C0.74
Reverse Recovery Time tRR
VGS = 0 V,
dIS/dt = 100 A/ms,
IS = 3 A
17 ns
Charge Time ta14
Discharge Time tb3
Reverse Recovery Charge QRR 19 nC
5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
TYPICAL CHARACTERISTICS
0
2
4
6
8
012345
Figure 1. OnRegion Characteristics
VDS, DRAINTOSOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
10 V
TJ = 25°C
VGS = 3 V
4.5 V
4.0 V
3.5 V
0
2
4
6
8
123456
VDS 10 V
TJ = 25°C
TJ = 55°C
TJ = 125°C
Figure 2. Transfer Characteristics
VGS, GATETOSOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
0.10
0.20
0.30
0.40
0.50
246810
Figure 3. OnResistance vs. GatetoSource
Voltage
VGS, GATETOSOURCE VOLTAGE (V)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
ID = 3 A
TJ = 25°C
0.10
0.20
0.30
0.40
0.50
2 4 6 8 10 12 14
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
ID, DRAIN CURRENT (A)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
VGS = 4.5 V
VGS = 10 V
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
50 25 0 25 50 75 100 125 150 175
Figure 5. OnResistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAINTOSOURCE
RESISTANCE (NORMALIZED)
VGS = 10 V
ID = 3 A
10
100
1000
10000
10 20 30 40 50 60
Figure 6. DraintoSource Leakage Current
vs. Voltage
VDS, DRAINTOSOURCE VOLTAGE (V)
IDSS, LEAKAGE (nA)
TJ = 125°C
TJ = 150°C
VGS = 0 V
TJ = 25°C
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TYPICAL CHARACTERISTICS
0
100
200
300
0 102030405060
Figure 7. Capacitance Variation
VDS, DRAINTOSOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TJ = 25°C
VGS = 0 V
Ciss
Coss
Crss 0
2
4
6
8
10
0246
Figure 8. GatetoSource Voltage vs. Total
Charge
Qg, TOTAL GATE CHARGE (nC)
VGS, GATETOSOURCE VOLTAGE
(V)
VDS = 48 V
ID = 3 A
TJ = 25°C
QT
Qgs Qgd
1.0
10.0
100.0
1000.0
1 10 100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
RG, GATE RESISTANCE (W)
t, TIME (ns)
td(off)
td(on)
tf
tr
VDD = 48 V
ID = 3 A
VGS = 10 V
0
10
20
30
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD, SOURCETODRAIN VOLTAGE (V)
IS, SOURCE CURRENT (A)
TJ = 25°C
VGS = 0 V
0.1
1
10
100
1000
0.1 1 10 100
VGS = 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
10 ms
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAINTOSOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 11. Diode Forward Voltage vs. Current
0
2
4
6
8
10
25 50 75 100 125 150 175
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (°C)
EAS, SINGLE PULSE DRAINTO
SOURCE AVALANCHE ENERGY (mJ)
ID = 13 A
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5
TYPICAL CHARACTERISTICS
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 13. Thermal Response
PULSE TIME (sec)
RqJA(t) (°C/W)
0.1
Duty Cycle = 0.5
0.2
0.05
0.02
0.01
Single Pulse
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NVTFS5124PLTAG 5124 WDFN8
(PbFree)
1500 / Tape & Reel
NVTFS5124PLWFTAG 24LW WDFN8
(PbFree)
1500 / Tape & Reel
NVTFS5124PLTWG 5124 WDFN8
(PbFree)
5000 / Tape & Reel
NVTFS5124PLWFTWG 24LW WDFN8
(PbFree)
5000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
M1.40 1.50
q0 −−−
_
1.60
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
1234
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
B
A
0.20 C
0.20 C
2X
2X
DIM MIN NOM
MILLIMETERS
A0.70 0.75
A1 0.00 −−−
b0.23 0.30
c0.15 0.20
D
D1 2.95 3.05
D2 1.98 2.11
E
E1 2.95 3.05
E2 1.47 1.60
e0.65 BSC
G0.30 0.41
K0.65 0.80
L0.30 0.43
L1 0.06 0.13
A
0.10 C
0.10 C
DETAIL A
14
8L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 C
L
DETAIL A
A1
e
6X
c
4X
C
SEATING
PLANE
5
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.95
0.56
0.20
M
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.650.42
0.75 2.30
3.46
PACKAGE
8X
0.055 0.059
0 −−−
_
0.063
12
_
0.028 0.030
0.000 −−−
0.009 0.012
0.006 0.008
0.116 0.120
0.078 0.083
0.116 0.120
0.058 0.063
0.026 BSC
0.012 0.016
0.026 0.032
0.012 0.017
0.002 0.005
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.037
0.022
0.008
MIN NOM
INCHES
MAX
78
PITCH
3.60
0.57
0.47
OUTLINE
DIMENSION: MILLIMETERS
3.30 BSC
3.30 BSC
0.130 BSC
0.130 BSC
2.37
0.66
4X
E3 0.23 0.30 0.40 0.009 0.012 0.016
E3
4X
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Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
NVTFS5124PL/D
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