DOWULCCON oer: <cs xc. PRODUCT CATALOG 201 (S595 "Bae S51 1 RT 358 SEAR (3598 08 522508 P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS -?POOV 7 1 1A . 0 . Sj Q PARAMETER i SYMBOL UNITS Drain-source Volt.{1) | VOSS - 200 Vde SDF 9240 JAA Drain-Gate Vol tage VDGR -200 Vdc SDF 9240 JAB (Res =l.CMa) (1) Gate-Source Voltage VGS 220 Vde SDF 9240 JDA Continuous Drain Current Continuous . yearn Carrs 5 : se | [FEATURES Drain Current Pulsea(3) | 10M -44 A Total Power Dissipation PD 100 W Or eee PONS CKICT ION Power Dissipation . Derating > 25C 0.83 W/C @ CERAMIC EYELETS: JAA, JAB :; @ LEAD BENDING OPTIONS Operating & Storage Temp. | TU/Tsig -55 TO +150 C Thermal Resistance Rthdc L.2 C/W ; COPPER roSses ALLOY PINS Max.Leaa temperature TL 300 C @ LOW THERMAL RESISTANCE @ OPTIONAL MIL-S-19500 ELECTRICAL CHARACTERISTICS Te =25C (aise apc te teD) SCREENING (TX-S) PARAMETER SYMBOL] TEST CONDITIONS MINI TYP MAX (UNITS SCHEMATIC i VGS=OV | QOS Breakdown, Volt (BRIS iD=-250 uA 200} - - | 0) [TERMINAL CONNECTIONS Gate Threshold] . _. 7 ~ G 4 Voltage iVGS(TH)}VOS=VGS_ 1D=-250 WA |-2.0] - |-4.0] V He TT GATE TT DRAIN leakage. IGSS |VGS=+20 V - =~ |-100] nA [/e 21 DRAIN 2] SOURCE Zero Gate VDS=MAX.RATING VGS=0| | |-250] WA 3}]source | 3] GATE Voltage Drain | 1DSS [ypSs=0.8 MAX.RATING STANDARD BEND Current VGS=0 TU=125C - ~ } 1000 HA CONF IGURAT IONS JAA Static Drain- VGS=10 V Ss On-State|RDS(ON -~ | - Oo. Q J seers ooe erg te |RO5(ON)|VBE=608 0.5: DA F d T - vOS 2 SO V Conductance (2) gfs IDS=-G.OA 4.0] - - |S(b) Input Capacitance! CISS _{1100) - pF wou Output Capacitance} COSS |VGS=OV VDS=-25 V -~ (375}/ - pF S 3 Reverse lransfer f=1.0 MHz 1 Capacitance CRSS ~ |tSO| ar Turn-On Delay itd{on)|vpp=-to00V 70=4.79 ~ - | 30 | As Rise Time tr (MOSFET - - [100] ns itchi ti Turn-Off Delaylid(off)! are essentially indepen- = - |100] 9s Fall Time tf dent of operating temp.) [_ _ 100] ns a Uy 3 3 Total Gate Charge T) 1 Gate-Source Plus| Qg - - 90 | nC 3 ate-Drain) VGS="15V. 1D=-22A 12 Gate-Source VDS=0.8 MAX.RATING Charge Qgs (Gate charge is essenti- - |ss{ - nc (CUSTOM BEND OPTIONS AVAILABLE) Gate-Drain ally Independent 0 e CM lier) Qgd operating temperature) _ iS _ AC OOS OU RAR TONS JAB harge SOURCE -DRAIN DIODE RATINGS & CHARACT.Tc = 25C ((MESS_OTHER PARAMETER | SYMBOL. TEST CONDITIONS MIN | TYP .|MAX./UNITS Continuous | tp Source Current! {S$ Modified MOSFET -|- l-tul A (Body Diode) symbo! showing e integral reverse Pulse Source P-N junction recti- Current (Body \SM |fier (See schematic)| - |-44|[ A Diode) (1) Diode Forward IF=-11A, VGS=0V - |. Voltage (2) VSD |tee-25% ~ 4.6) V Reverse =s0Ge Recovery Time tre Te=*25* C - |270) - ns Reverse Re- IFS 11A covery Charge | Orr |[di/dt=100A/ HS }2.0) ~ 7 ue (CUSTOM BEND OPTIONS AVAILABLE) iB TU = 25C to 150C. REL .3/93 2) Pulse test: Pulse Width <300nS, Duty Cycle < 22. 3) Repetitive Rating: Pulse Width timited By Max.junction Temperature. AS7