SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A *High Voltage : BC237 VCEO=45V. *Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). N E K *For Complementary With PNP type BC307/308/309. G J D MAXIMUM RATING (Ta=25) H F F RATING UNIT 50 L BC237 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current BC238 VCBO 30 BC239 30 BC237 45 BC238 VCEO 20 BC239 20 BC237 6 BC238 VEBO 5 BC239 5 BC237 100 BC238 IC 100 BC239 50 BC237 -100 BC238 IE BC239 -50 V V 1. COLLECTOR TO-92 V mA mA -50 625 mW Junction Temperature Tj 150 Tstg -55150 Revision No : 0 3 3. EMITTER PC 1994. 3. 2 2 2. BASE Collector Power Dissipation Storage Temperature Range 1 C SYMBOL MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M CHARACTERISTIC DIM A B C D E F G H J K L M N 1/2 BC237/8/9 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL ICBO Collector Cut-off Current TEST CONDITION MIN. TYP. MAX. UNIT - - 15 nA 120 - 460 120 - 800 180 - 800 - - 0.6 - - 0.6 - - 0.2 - - 1.05 - - 1.05 - - 0.83 VCE=5V, IC=2mA 0.55 - 0.7 V VCE=5V, IC=10mA, f=100MHz 150 250 - MHz - - 4.5 pF - 1.0 10 - 1.0 10 - 0.2 3.0 VCB=50V, IE=0 BC237 DC Current Gain BC238 (Note) hFE VCE=5V, IC=2mA BC239 BC237 IC=100mA, IB=5mA Collector-Emitter BC238 Saturation Voltage VCE(sat) IC=10mA, IB=0.5mA BC239 BC237 V IC=100mA, IC=5mA Base-Emitter BC238 Saturation Voltage VBE(sat) IC=10mA, IB=0.5mA BC239 Base-Emitter Voltage VBE(ON) Transition Frequency fT Cob Collector Output Capacitance VCB=10V, f=1MHz, IE=0 BC237 BC238 Noise Figure VCE=6V, IC=0.1mA NF V dB Rg=10k, f=1kHz BC239 NOTE : According to the Value of hFE the BC237, BC238, BC239 are classified as follows. CLASSIFICATION hFE 1994. 3. 2 Revision No : 0 A B C BC237 120220 180460 - BC238 120220 180460 380800 BC239 - 180460 380800 2/2