BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V(BR)DSS RDS(on) max Q1 Q2 60V -50V 13.5 @ VGS = 10V 10 @ VGS = -5V ID TA = 25C 115mA -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications General Purpose Interfacing Switch Power Management Functions Analog Switch Case: SOT363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.006 grams (approximate) SOT363 D1 G2 S2 Q1 Q2 S1 G1 D2 Top View Top View Internal Schematic Compliance Standard Standard Automotive Automotive Case SOT363 SOT363 SOT363 SOT363 Ordering Information (Note 3) Part Number BSS8402DW-7-F BSS8402DW-13-F BSS8402DWQ-7 BSS8402DWQ-13 Notes: Packaging 3,000/Tape & Reel 10,000/Tape & Reel 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http"//www.diodes.com/products/packages.html KNP Date Code Key Year 2003 Code P Month Code Jan 1 2004 R 2005 S Feb 2 BSS8402DW Document number: DS30380 Rev. 19 - 2 2006 T Mar 3 2007 U Apr 4 YM Marking Information 2008 V May 5 KNP = Product Type Marking Code YM = Date Code Marking Y = Year (ex: R = 2004) M = Month (ex: 9 = September) 2009 W 2010 X Jun 6 1 of 7 www.diodes.com Jul 7 2011 Y Aug 8 2012 Z Sep 9 2013 A 2014 B Oct O 2015 C Nov N 2016 D Dec D February 2013 (c) Diodes Incorporated BSS8402DW Maximum Ratings - Total Device (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Value 200 625 -55 to +150 Units mW C/W C Maximum Ratings N-CHANNEL - Q1, 2N7002 Section (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0M Gate-Source Voltage Drain Current (Note 5) Symbol VDSS VDGR Continuous Pulsed Continuous Continuous @ +100C Pulsed VGSS ID Value 60 60 20 40 115 73 800 Units V V V mA Maximum Ratings P-CHANNEL - Q2, BSS84 Section (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 20K Gate-Source Voltage Drain Current (Note 5) Note: Continuous Continuous Symbol VDSS VDGR VGSS ID Value -50 -50 20 -130 Units V V V mA 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com. BSS8402DW Document number: DS30380 Rev. 19 - 2 2 of 7 www.diodes.com February 2013 (c) Diodes Incorporated BSS8402DW Electrical Characteristics N-CHANNEL - Q1, 2N7002 Section (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time @ TC = +25C @ TC = +125C @ TJ = +25C @ TJ = +125C Symbol Min Typ Max Unit Test Condition BVDSS 60 70 V VGS = 0V, ID = 10A IDSS A VDS = 60V, VGS = 0V IGSS 1.0 500 10 nA VGS = 20V, VDS = 0V VGS(th) 1.0 3.2 4.4 2.5 V 7.5 13.5 VDS = VGS, ID = 250A VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A RDS(on) ID(on) gFS 0.5 80 1.0 A mS Ciss Coss Crss 22 11 2.0 50 25 5.0 pF pF pF VDS = 25V, VGS = 0V, f = 1.0MHz tD(on) tD(off) 7.0 11 20 20 ns ns VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 Electrical Characteristics P-CHANNEL - Q2, BSS84 Section (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS -50 -1 -2 -100 A A nA 10 nA VGS = 0V, ID = -250A VDS = -50V, VGS = 0V, TJ = 25C VDS = -50V, VGS = 0V, TJ = 125C VDS = -25V, VGS = 0V, TJ = 25C VGS = 20V, VDS = 0V V Test Condition Zero Gate Voltage Drain Current IDSS Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time IGSS VGS(th) RDS (on) gFS -0.8 .05 -2.0 10 V S VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Ciss Coss Crss 45 25 12 pF pF pF VDS = -25V, VGS = 0V, f = 1.0MHz tD(on) tD(off) 10 18 ns ns VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V Note: 6. Short duration pulse test used to minimize self-heating effect. BSS8402DW Document number: DS30380 Rev. 19 - 2 3 of 7 www.diodes.com February 2013 (c) Diodes Incorporated BSS8402DW N-CHANNEL - 2N7002 Section 7 1.0 0.8 0.6 0.4 0.2 0 6 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () ID, DRAIN-SOURCE CURRENT (A) Tj = 25 C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 On-Region Characteristics 5 4 3 2 1 0 5 5 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Figure 2 On-Resistance vs. Drain Current 0.2 6 3.0 2.5 2.0 1.5 VGS = 10V, ID = 200mA 4 3 2 1 1.0 -55 0 0 -30 -5 20 45 70 95 120 145 TJ, JUNCTION TEMPERATURE ( C) Figure 3 On-Resistance vs. Junction Temperature 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4 On-Resistance vs. Gate-Source Voltage 250 10 VDS = 10V 9 8 PD, POWER DISSIPATION (mW) VGS, GATE-SOURCE CURRENT (V) 0 7 6 5 4 3 2 200 150 100 50 1 0 0 0.2 0.4 0.8 0.6 ID, DRAIN CURRENT (A) Figure 5 Typical Transfer Characteristics BSS8402DW Document number: DS30380 Rev. 19 - 2 1 4 of 7 www.diodes.com 0 50 75 25 100 125 150 175 200 TA, AMBIENT TEMPERATURE ( C) Figure 6 Max Power Dissipation vs. Ambient Temperature 0 February 2013 (c) Diodes Incorporated BSS8402DW IDSS, DRAIN LEAKAGE CURRENT (nA) 1000 TA = 150C 100 TA = 125C TA = 85C 10 TA = 25C 1 5 10 15 20 25 30 35 40 45 50 55 60 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 7 Typical Drain-Source Leakage Current vs. Voltage P-CHANNEL - BSS84 Section -600 -1.0 -500 -0.8 ID, DRAIN CURRENT (A) ID, DRAIN-SOURCE CURRENT (mA) TA = 25 C -400 -0.6 -300 -0.4 -200 -0.2 -100 0 0 -0.0 -1 -2 -3 -4 -5 VDS, DRAIN-SOURCE (V) Figure 8 Drain-Source Current vs. Drain-Source Voltage 10 0 15 VGS = -10V ID = -0.13A 8 RDS, ON-RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 9 7 6 5 4 3 12 9 6 3 2 TA = 125 C 1 0 -5 -1 -2 -3 -4 -6 -7 -8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 9 Drain Current vs. Gate-Source Voltage TA = 25 C 0 -1 -2 -4 -5 -3 VGS, GATE TO SOURCE (V) Figure 10 On-Resistance vs. Gate-Source Voltage BSS8402DW Document number: DS30380 Rev. 19 - 2 5 of 7 www.diodes.com 0 -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 11 On-Resistance vs. Junction Temperature -25 February 2013 (c) Diodes Incorporated BSS8402DW 1000 -IDSS, DRAIN LEAKAGE CURRENT (nA) 25.0 RDS, ON-RESISTANCE () 20.0 VGS = -3.5V VGS = -3V 15.0 VGS = -5V VGS = -4V 10.0 VGS = -6V 5.0 VGS = -8V VGS = -10V 0.0 -0.0 TA = 150C 100 TA = 125C TA = 85C 10 TA = 25C 1 -0.2 -0.4 -0.6 -0.8 1.0 ID, DRAIN CURRENT (A) Figure 12 On-Resistance vs. Drain Current 5 10 15 20 25 30 35 40 45 50 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13 Typical Drain-Source Leakage Current vs. Voltage Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT363 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11 0 8 All Dimensions in mm B C H K M J D L F Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X BSS8402DW Document number: DS30380 Rev. 19 - 2 6 of 7 www.diodes.com February 2013 (c) Diodes Incorporated BSS8402DW IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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