BSS8402DW
Document number: DS30380 Rev. 19 - 2
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BSS8402DW
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS R
DS(on) max ID
T
A
= 25°C
Q1 60V
13.5 @ VGS = 10V 115mA
Q2 -50V
10 @ VGS = -5V -130mA
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Ordering Information (Note 3)
Part Number Compliance Case Packaging
BSS8402DW-7-F Standard SOT363 3,000/Tape & Reel
BSS8402DW-13-F Standard SOT363 10,000/Tape & Reel
BSS8402DWQ-7 Automotive SOT363 3,000/Tape & Reel
BSS8402DWQ-13 Automotive SOT363 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016
Code P R S T U V W X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT363
Top View Top View
Internal Schematic
S
2
D
2
Q
1
Q
2
D
1
S
1
G
2
G
1
KNP = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: R = 2004)
M = Month (ex: 9 = September)
KNP
YM
e3
BSS8402DW
Document number: DS30380 Rev. 19 - 2
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Maximum Ratings Total Device (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Power Dissipation (Note 5) PD 200 mW
Thermal Resistance, Junction to Ambient RθJA 625 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Maximum Ratings N-CHANNEL – Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS 1.0M V
DGR 60 V
Gate-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Drain Current (Note 5) Continuous
Continuous @ +100°C
Pulsed
ID
115
73
800
mA
Maximum Ratings P-CHANNEL – Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage RGS 20K V
DGR -50 V
Gate-Source Voltage Continuous VGSS 20 V
Drain Current (Note 5) Continuous ID -130 mA
Note: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com.
BSS8402DW
Document number: DS30380 Rev. 19 - 2
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Electrical Characteristics N-CHANNEL – Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 60 70 V VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current @ TC = +25°C
@ TC = +125°C IDSS 1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ±10 nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
1.0 2.5 V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance @ TJ = +25°C
@ TJ = +125°C RDS(on) 3.2
4.4
7.5
13.5 VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current ID
(
on
)
0.5 1.0 A VGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss 22 50 pF
VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 11 25 pF
Reverse Transfer Capacitance Crss 2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD
(
on
)
7.0 20 ns
VDD = 30V, ID = 0.2A,
RL = 150, VGEN = 10V, RGEN = 25Turn-Off Delay Time tD
(
off
)
11 20 ns
Electrical Characteristics P-CHANNEL – Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -50 V VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current IDSS

-1
-2
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = 25C
VDS = -50V, VGS = 0V, TJ = 125C
VDS = -25V, VGS = 0V, TJ = 25C
Gate-Body Leakage IGSS 10 nA VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
-0.8 -2.0 V
VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance RDS
(
on
)
10 V
GS = -5V, ID = -0.100A
Forward Transconductance gFS .05 S VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss 45 pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 25 pF
Reverse Transfer Capacitance Crss 12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD
(
on
)
10 ns VDD = -30V, ID = -0.27A,
RGEN = 50, VGS = -10V Turn-Off Delay Time tD
(
off
)
18 ns
Note: 6. Short duration pulse test used to minimize self-heating effect.
BSS8402DW
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N-CHANNEL – 2N7002 Section
0
0.2
0.4
0.6
0.8
1.0
01 2345
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 On-Region Characteristics
DS
I , DRAIN-SOURCE CURRENT (A)
D
0
1
2
3
4
5
00.2
I , DRAIN CURRENT (A)
Figure 2 On-Resistance vs. Drain Current
D
T = 25 C
j
°
6
7
0.4 0.6 0.8 1.0
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
1.0
1.5
2.0
2.5
3.0
-55 -30 -5 20 45 70 95 120 145
T , JUNCTION TEMPERATURE ( C)
Figure 3 On-Resistance vs. Junction Temperature
J
°
V = 10V,
I
GS
D
= 200mA
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
V , GATE TO SOURCE VOLTAGE (V)
Figure 4 On-Resistance vs. Gate-Source Voltage
GS
1
2
3
4
5
6
024681012141618
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
2
1
4
3
00.20.4
0.6 0.8 1
V
G
A
T
E-S
O
U
R
C
E
C
U
R
R
EN
T
(V)
GS,
I , DRAIN CURRENT (A)
Figure 5 Typical Transfer Characteristics
D
6
5
8
7
10
9
V = 10V
DS
0
50
100
150
200
250
025
50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE ( C)
Figure 6 Max Power Dissipation vs. Ambient Temperature
A
°
BSS8402DW
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V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 7 Typical Drain-Source Leakage Current vs. Voltage
I, D
R
AIN LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
1000
5 1015202530354045505560
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
100
10
1
P-CHANNEL – BSS84 Section
0
-600
-500
-400
-300
-200
-100
0-2-1 -5-4-3
I, D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
E
N
T
(mA)
D
V , DRAIN-SOURCE (V)
DS
Figure 8 Drain-Source Current vs. Drain-Source Voltage
T = 25C
A
°
-0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0-2-3-4-1 -8-7
-6
-5
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V , GATE-TO-SOURCE VOLTAGE (V)
GS
Figure 9 Drain Current vs. Gate-Source Voltage
0
1
2
4
5
3
6
8
7
10
9
0-1-2-3 -4 -5
V , GATE TO SOURCE (V)
Figure 10 On-Resistance vs. Gate-Source Voltage
GS
T= 25C
A
°
T = 125C
A
°
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
3
6
9
12
15
-50 -25 025 50 12510075 150
T , JUNCTION TEMPERATURE (°C)
Figure 11 On-Resistance vs. Junction Temperature
J
V = -10V
I = -0.13A
GS
D
R , ON-RESISTANCE ( )
DS
BSS8402DW
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BSS8402DW
0.0
5.0
10.0
-0.0 -0.2 -0.4 -0.6 -0.8 1.0
I , DRAIN CURRENT (A)
Figure 12 On-Resistance vs. Drain Current
D
15.0
20.0
25.0
V = -8V
GS
V = -10V
GS
V = -3V
GS
V = -3.5V
GS
V = -4V
GS
V = -6V
GS
V = -5V
GS
R
,
O
N-
R
ESIS
T
AN
C
E ( )
DS
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 13 Typical Drain-Source Leakage Current vs. Voltage
-I , D
R
AIN LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
1000
5 101520253035404550
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
100
10
1
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT363
Dim Min Max Typ
A 0.10 0.30 0.25
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D 0.65 Typ
F 0.40 0.45 0.425
H 1.80 2.20 2.15
J 0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.22 0.11
 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C1 1.9
C2 0.65
A
M
JL
D
B C
H
K
F
X
Z
Y
C1
C2
C2
G
BSS8402DW
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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