2007. 12. 27 1/2
SEMICONDUCTOR
TECHNICAL DATA
PF1007UDF12
EMI Filtering TVS
Revision No : 0
EMI Filtering TVS For Data Line
FEATURES
EMI/RFI filtering.
ESD Protection to IEC 61000-4-2 Level 4.
Low insertion loss.
Good attenuation of high frequency signals.
Low clamping voltage.
Low operating and leakage current.
Six elements in one package
MAXIMUM RATING (Ta=25 )
UDFN-12
MILLIMETERSDIM
2.50
1.80 0.10
+
_
L
K
J
F
1.20
0.40
0.125
0.03+0.02/-0.03
0.20 Min
0.50 0.05
+
_
0.30 0.10
+
_
0.20 0.05
+
_
0.25 0.05
+
_
TOP VIEW
SIDE VIEW
BOTTOM VIEW
A
B
C
H
G
K
L
J
D
E
F
A
B
C
G
H
D
16
12 7
E
Pin 1
1,12 : Filter channel 1
2,11 : Filter channel 2
3,10 : Filter channel 3
4,9 : Filter channel 4
5,8 : Filter channel 5
6,7 : Filter channel 6
GND PAD
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Stand-Off Voltage VRWM - - - 5 V
Reverse Breakdown Voltage VBR It=1mA 6 - - V
Reverse Leakage Current IRVRWM=3V - - 1 A
Cutoff Frequency f3dB VR=0V, ZSOURCE=50 , ZLOAD=50 - 200 - MHz
Resistance R Between Input and Output - 100 -
Capacitance C2.5V VR=2.5V, Between I/O Pins and GND - 15 - pF
EQUIVALENT CIRCUIT
Type Name
Lot No.
T9
MARKING
CHARACTERISTIC SYMBOL RATING UNIT
DC Power Per Resistor PR100
mW
Power Dissipation *PD600
Junction Temperature Tj150
Storage Temperature Tstg -55 150
* Total Package Power Dissipation
7.5pF 7.5pF
100Ω
FILTER FILTER
GND
2007. 12. 27 2/2
PF1007UDF12
Revision No : 0
REVERSE VOLTAGE VR (V)
10
100
1
0.1
012345
REVERSE LEAKAGE CURRENT IR (nA)
REVERSE VOLTAGE VR (V)
0.5
1.5
2.0
0.0
012345
1.0
NORMALIZED CAPACITANCE
CJ - VR
IR - VR
S21 - F
FREQUENCY (MHz)
-20
0
-40
1 10 100 1000 6000
-30
-10
INSERTION LOSS (dB)
