Order this document by MBR1100/D SEMICONDUCTOR TECHNICAL DATA . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. * * * * * * * * Motorola Preferred Device Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard-Ring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature High Surge Capacity SCHOTTKY BARRIER RECTIFIER 1 AMPERE 100 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: 220C Max. for 10 Seconds, 1/16 from case * Shipped in plastic bags, 1000 per bag * Available Tape and Reeled, 5000 per reel, by adding a "RL'' suffix to the part number * Polarity: Cathode Indicated by Polarity Band * Marking: B1100 CASE 59-04 PLASTIC MAXIMUM RATINGS Rating Symbol MBR1100 Unit VRRM VRWM VR 100 Volts Average Rectified Forward Current (VR(equiv) 0.2 VR(dc), RJA = 50C/W, P.C. Board Mounting, see Note 1, TA = 120C) IO 1 Amp Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, half-wave, single phase, 60 Hz) IFSM 50 Amps TJ, Tstg *65 to +150 C dv/dt 10 V/ns Symbol Max Unit RJA See Note 1 C/W Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage v Operating and Storage Junction Temperature Range Voltage Rate of Change (Rated VR) THERMAL CHARACTERISTICS (See Note 2) Characteristic Thermal Resistance, Junction to Ambient ELECTRICAL CHARACTERISTICS (TL = 25C unless otherwise noted) Characteristic Symbol Maximum Instantaneous Forward Voltage (1) (iF = 1 A, TL = 25C) (iF = 1 A, TL = 100C) VF Maximum Instantaneous Reverse Current @ Rated dc Voltage (1) (TL = 25C) (TL = 100C) iR Volt 0.79 0.69 mA 0.5 5 (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Rectifier Device Data Motorola, Inc. 1999 1 20 10 TJ = 150C 5.0 IR , REVERSE CURRENT ( mA) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR1100 100C 2.0 25C 1.0 0.5 0.2 0.1 0.05 1K 400 200 100 40 20 10 TJ = 150C 125C 100C 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 10 0 20 30 40 50 60 70 80 90 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current* 100 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 4.0 3.0 dc 2.0 SQUARE WAVE 1.0 0 0 20 40 60 80 100 120 140 180 160 200 4.0 3.0 SQUARE WAVE dc 2.0 1.0 0 0 1.0 2.0 3.0 4.0 TA, AMBIENT TEMPERATURE (C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 3. Current Derating (Mounting method 3 per note 1.) Figure 4. Power Dissipation 5.0 C, CAPACITANCE (pF) 150 100 90 80 70 60 50 TJ = 25C fTEST = 1 MHz 40 30 20 15 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Capacitance 2 Rectifier Device Data MBR1100 NOTE 1 -- MOUNTING DATA: Data shown for thermal resistance junction-to-ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. NOTE 2 -- THERMAL CIRCUIT MODEL: (For heat conduction through the leads) RS(A) RL(A) RJ(A) TA(A) RL(K) RJ(K) RS(K) TA(K) PD TL(A) TC(A) TJ TC(K) TL(K) Typical Values for RJA in Still Air Lead Length, L (in) Mounting g Method 1/8 1/4 1/2 3/4 1 52 65 72 85 C/W 2 67 80 87 100 C/W 3 -- Mounting Method 1 P.C. Board with 1-1/2 x 1-1/2 copper surface. E E EEEEEEE E E E EEEEEEEE EEEEEEEE L L Mounting Method 2 L L VECTOR PIN MOUNTING Rectifier Device Data 50 RJA C/W Mounting Method 3 P.C. Board with 1-1/2 x 1-1/2 copper surface. L = 3/8 BOARD GROUND PLANE Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. Terms in the model signify: TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RS = Thermal Resistance, Heat Sink to Ambient RL = Thermal Resistance, Lead to Heat Sink RJ = Thermal Resistance, Junction to Case PD = Power Dissipation (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RL = 100C/W/in typically and 120C/W/in maximum. RJ = 36C/W typically and 46C/W maximum. NOTE 3 -- HIGH FREQUENCY OPERATION: Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 5.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. 3 MBR1100 PACKAGE DIMENSIONS NOTES: 1. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO-41 OUTLINE SHALL APPLY. 2. POLARITY DENOTED BY CATHODE BAND. 3. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. B D K DIM A B D K A MILLIMETERS MIN MAX 5.97 6.60 2.79 3.05 0.76 0.86 27.94 --- INCHES MIN MAX 0.235 0.260 0.110 0.120 0.030 0.034 1.100 --- K CASE 59-04 ISSUE M Motorola reserves the right to make changes without further notice to any products herein. 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