MBR1100RL - Motorola / Freescale Semiconductor

1Rectifier Device Data

  

. . . employing the Schottky Barrier principle in a large area metal–to–silicon power

diode. State–of–the–art geometry features epitaxial construction with oxide passiva-

tion and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

high–frequency inverters, free wheeling diodes, and polarity protection diodes.

•Low Reverse Current

•Low Stored Charge, Majority Carrier Conduction

•Low Power Loss/High Efficiency

•Highly Stable Oxide Passivated Junction

•Guard–Ring for Stress Protection

•Low Forward Voltage

•150°C Operating Junction Temperature

•High Surge Capacity

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 0.4 gram (approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are

Readily Solderable

•Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max.

for 10 Seconds, 1/16″ from case

•Shipped in plastic bags, 1000 per bag

•Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the part

number

•Polarity: Cathode Indicated by Polarity Band

•Marking: B1100

MAXIMUM RATINGS

Rating Symbol MBR1100 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100 Volts

Average Rectified Forward Current

(VR(equiv)

0.2 VR(dc), RθJA = 50°C/W, P.C. Board Mounting,

see Note 1, TA = 120°C)

IO1 Amp

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions, half–wave, single phase,

60 Hz)

IFSM 50 Amps

Operating and Storage Junction Temperature Range TJ, Tstg

65 to +150 °C

Voltage Rate of Change (Rated VR) dv/dt 10 ⋅V/ns

THERMAL CHARACTERISTICS (See Note 2)

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient RθJA See Note 1 °C/W

ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)

Characteristic Symbol Max Unit

Maximum Instantaneous Forward Voltage (1)

(iF = 1 A, TL = 25°C)

(iF = 1 A, TL = 100°C)

VF0.79

0.69

Volt

Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)

(TL = 25°C)

(TL = 100°C)

iR0.5

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

 Motorola, Inc. 1999

Order this document

by MBR1100/D



SEMICONDUCTOR TECHNICAL DATA



SCHOTTKY BARRIER

RECTIFIER

1 AMPERE

100 VOLTS

CASE 59–04

PLASTIC

Motorola Preferred Device

MBR1100

2Rectifier Device Data

Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current*

Figure 3. Current Derating

(Mounting method 3 per note 1.) Figure 4. Power Dissipation

Figure 5. Typical Capacitance

0.6 0.90

vF, INSTANTANEOUS VOLTAGE (VOLTS)

2.0

5.0

1.0

VR, REVERSE VOLTAGE (VOL TS)

60 900

0.2

0.04

0.02

0.01

120 1600

TA, AMBIENT TEMPERATURE (

4.0

3.0

2.0

1.0

IF(AV), A VERAGE FOR W ARD CURRENT (AMPS)

1.00

4.0

3.0

2.0

1.0

02.0140

20 400

VR, REVERSE VOLTAGE (VOL TS)

150

15 30

iF, INSTANTANEOUS FORWARD CURRENT (AMPS)

PF(AV), AVERAGE POWER DISSIPATION (W ATTS)

0.5

0.2

0.1

0.30.1 0.2 0.4 0.5 0.7 0.8 70 8010 20 30 40 50

0.1

0.4

1.0

20 40 60 80 100 3.0 4.0 5.0

C, CAPACITANCE (pF)

50 10060

100

0.05

0.02 1.1 1.41.0 1.2 1.3 100

, REVERSE CURRENT ( A)

4.0

2.0

100

200

1 K

400

200180

, A VERAGE FORWARD CURRENT (AMPS)

F(AV)

10 70 80 90

TJ = 25

fTEST = 1 MHz

SQUARE W AVE

TJ = 150

100

TJ = 150

125

100

*The curves shown are typical for the highest voltage device

in the voltage grouping. Typical reverse current for lower

voltage selections can be estimated from these same

curves if VR is sufficiently below rated VR.

MBR1100

3Rectifier Device Data

NOTE 1 — MOUNTING DATA:

Data shown for thermal resistance junction–to–ambient

(RθJA) for the mountings shown is to be used as typical

guideline values for preliminary engineering or in case the tie

point temperature cannot be measured.

Typical Values for RθJA in Still Air

Mounting Lead Length, L (in)

RθJA

Method 1/8 1/4 1/2 3/4

θJA

152 65 72 85 °C/W

2 67 80 87 100 °C/W

3 — 50 °C/W

Mounting Method 1

P.C. Board with

1–1/2″ x 1–1/2″

copper surface.

Mounting Method 3

P.C. Board with

1–1/2″ x 1–1/2″

copper surface.

BOARD GROUND

PLANE

VECTOR PIN MOUNTING

Mounting Method 2

ÉÉÉÉÉÉÉ

ÉÉÉÉÉÉÉÉ

L = 3/8

″

NOTE 2 — THERMAL CIRCUIT MODEL:

(For heat conduction through the leads)

TA(A) TA(K)

TL(A) TC(A) TJTC(K) TL(K)

S(A) R

L(A) R

J(A) R

θJ(K)

L(K) R

S(K)

Use of the above model permits junction to lead thermal

resistance for any mounting configuration to be found. For a

given total lead length, lowest values occur when one side of

the rectifier is brought as close as possible to the heat sink.

Terms in the model signify:

TA = Ambient Temperature TC = Case Temperature

TL = Lead Temperature TJ = Junction Temperature

RθS = Thermal Resistance, Heat Sink to Ambient

RθL = Thermal Resistance, Lead to Heat Sink

RθJ = Thermal Resistance, Junction to Case

PD = Power Dissipation

(Subscripts A and K refer to anode and cathode sides,

respectively.) Values for thermal resistance components are:

RθL = 100°C/W/in typically and 120°C/W/in maximum.

RθJ = 36°C/W typically and 46°C/W maximum.

NOTE 3 — HIGH FREQUENCY OPERATION:

Since current flow in a Schottky rectifier is the result of ma-

jority carrier conduction, it is not subject to junction diode for-

ward and reverse recovery transients due to minority carrier

injection and stored charge. Satisfactory circuit analysis work

may be performed by using a model consisting of an ideal

diode in parallel with a variable capacitance. (See Figure 5.)

Rectification efficiency measurements show that operation

will be satisfactory up to several megahertz. For example,

relative waveform rectification efficiency is approximately 70

percent at 2.0 MHz, e.g., the ratio of dc power to RMS power

in the load is 0.28 at this frequency , whereas perfect rectifica-

tion would yield 0.406 for sine wave inputs. However, in con-

trast to ordinary junction diodes, the loss in waveform

efficiency is not indicative of power loss: it is simply a result

of reverse current flow through the diode capacitance, which

lowers the dc output voltage.

MBR1100

4Rectifier Device Data

PACKAGE DIMENSIONS

CASE 59–04

ISSUE M

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A5.97 6.60 0.235 0.260

B2.79 3.05 0.110 0.120

D0.76 0.86 0.030 0.034

K27.94 ––– 1.100 –––

NOTES:

1. ALL RULES AND NOTES ASSOCIATED WITH

JEDEC DO–41 OUTLINE SHALL APPLY.

2. POLARITY DENOTED BY CATHODE BAND.

3. LEAD DIAMETER NOT CONTROLLED WITHIN F

DIMENSION.

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

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applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

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MBR1100/D

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