Preliminary Datasheet BCR3PM-12LB Triac R07DS0098EJ0300 (Previous: REJ03G0459-0200) Low Power Use Rev.3.00 (The product guaranteed maximum junction temperature of 150C) Sep 13, 2010 Features IT (RMS) : 3 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 20 mA (10 mA)Note5 Viso : 2000 V Insulated Type Planar Passivation Type UL Recognized : Yellow Card No. E223904 Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F) 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Contactless AC switch, light dimmer, electric blanket, control of household equipment such as electric fan, solenoid driver, small motor control, and other general purpose control applications Warning 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 125C will be supplied. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 R07DS0098EJ0300 Rev.3.00 Sep 13, 2010 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V Page 1 of 7 BCR3PM-12LB Preliminary Parameter RMS on-state current Symbol IT (RMS) Ratings 3.0 Unit A Surge on-state current ITSM 30 A I2t 3.7 A2s PGM PG (AV) VGM IGM Tj Tstg -- Viso 3 0.3 6 0.5 - 40 to +150 - 40 to +150 2.0 2000 W W V A C C g V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360 conduction, Tc = 132C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. -- -- Typ. -- -- Max. 2.0 1.5 Unit mA V Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 4.5 A, Instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT -- -- -- -- -- -- 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 IFGT IRGT IRGT -- -- -- -- -- -- 20Note5 20Note5 20Note5 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD Rth (j-c) 0.2/0.1 -- -- -- -- 4.5 V C/W Tj = 125C/150C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 5/1 -- -- V/s Tj = 125C/150C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. 3. 4. 5. Measurement using the gate trigger characteristics measurement circuit. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT 10 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = -1.5 A/ms 3. Peak off-state voltage VD = 400 V R07DS0098EJ0300 Rev.3.00 Sep 13, 2010 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 7 BCR3PM-12LB Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 10 7 5 3 2 101 7 5 3 2 Tj = 150C 100 7 5 3 2 -1 Gate Voltage (V) 100 7 5 3 2 25 20 15 10 5 2 3 5 7 10 1 2 3 5 7 10 Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature PGM = 3W PG(AV) = 0.3W IGM = 0.5A VGT IRGT I VGD = 0.1V 10-1 IFGT I, IRGT III 7 5 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) 30 On-State Voltage (V) 5 3 2 101 7 5 3 2 35 0 0 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) 10 Tj = 25C Surge On-State Current (A) 40 103 7 5 3 2 102 7 5 2 Typical Example IRGT III IFGT I, IRGT I 3 2 101 -60 -40-20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 Typical Example 3 2 102 7 5 3 2 1 10 -60 -40-20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) R07DS0098EJ0300 Rev.3.00 Sep 13, 2010 Transient Thermal Impedance (C/W) On-State Current (A) 2 102 2 3 5 7103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 Conduction Time (Cycles at 60Hz) Page 3 of 7 BCR3PM-12LB Preliminary Allowable Case Temperature vs. RMS On-State Current 160 4.5 140 4.0 360 Conduction 3.5 Resistive, 3.0 inductive loads 2.5 2.0 1.5 1.0 of conduction angle 100 80 60 40 360 Conduction inductive loads 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 140 120 100 100 x 100 x t2.3 60 x 60 x t2.3 80 60 All fins are black painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 160 120 x 120 x t2.3 Ambient Temperature (C) Ambient Temperature (C) 120 Curves apply regardless 20 Resistive, 0.5 0 0 Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Case Temperature (C) 5.0 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 6 10 7 5 3 2 5 10 7 5 3 2 4 10 7 5 3 2 3 10 7 5 3 2 2 10 Typical Example -60 -40-20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) R07DS0098EJ0300 Rev.3.00 Sep 13, 2010 Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 3.0 3 10 7 5 Typical Example 3 2 102 7 5 3 2 101 -60 -40-20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Page 4 of 7 BCR3PM-12LB Preliminary Breakover Voltage vs. Junction Temperature Distribution T2+, G- Typical Example 102 7 5 3 2 101 7 5 3 T +, G+ 2 2- - Typical Example T2 , G 100 -60 -40-20 0 20 40 60 80 100 120 140 160 Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) 103 7 5 3 2 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40-20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150C) 160 Typical Example Tj = 125C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Junction Temperature (C) 160 Typical Example Tj = 150C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Rate of Rise of Off-State Voltage (V/s) Rate of Rise of Off-State Voltage (V/s) Commutation Characteristics (Tj=125C) Commutation Characteristics (Tj=150C) 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time 1 10 7 5 3 Minimum Characteristics 2 Value 0 10 7 0 10 Typical Example Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz III Quadrant I Quadrant 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) R07DS0098EJ0300 Rev.3.00 Sep 13, 2010 Critical Rate of Rise of Off-State Commutating Voltage (V/s) Critical Rate of Rise of Off-State Commutating Voltage (V/s) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Latching Current (mA) Latching Current vs. Junction Temperature 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time 1 10 7 5 III Quadrant 3 2 I Quadrant Minimum Characteristics Value 0 10 7 0 10 Typical Example Tj = 150C IT = 4A = 500s VD = 200V f = 3Hz 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 7 BCR3PM-12LB Preliminary Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 Typical Example IRGT III IRGT I 3 2 IFGT I 2 10 7 5 3 2 1 10 0 10 5 7 101 2 3 2 3 5 7 102 Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits 6 6 Recommended Circuit Values Around The Triac Load C1 A 6V V Test Procedure I R1 A 6V 330 V 330 Test Procedure II C0 R0 C1 = 0.1 to 0.47F C0 = 0.1F R1 = 47 to 100 R0 = 100 6 A 6V V 330 Test Procedure III R07DS0098EJ0300 Rev.3.00 Sep 13, 2010 Page 6 of 7 BCR3PM-12LB Preliminary Package Dimensions Package Name TO-220F JEITA Package Code SC-67 RENESAS Code PRSS0003AA-A Previous Code MASS[Typ.] 2.0g Unit: mm 10.5Max 2.8 17 8.5 5.0 1.2 5.2 3.20.2 13.5Min 3.6 1.3Max 0.8 2.54 0.5 2.6 4.5 2.54 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name - Lead forming code Standard order code example BCR3PM-12LB BCR3PM-12LB-A8 Note : Please confirm the specification about the shipping in detail. 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