EAMOSPEC HIGH-POWER PNP SILICON POWER TRANSISTORS ...designed for use in general-purpose amplifier and switching application . FEATURES: * Recommend for 125W High Fiderity Audio Frequency Amplifier Output stage * Complementary to 2SC2921 MAXIMUM RATINGS PNP 2SA1215 15 AMPERE POWER TRANASISTOR 160 VOLTS 150 WATTS TO-247(3P) Characteristic Symbol 2SA1215 Unit Collector-Emitter Voltage Voeo 160 Vv Collector-Base Voltage Vego 160 Vv Emitter-Base Voltage Veso 5.0 Vv Collector Current - Continuous lc 15 A - Peak lom 20 Base current lp 4.0 A Total Power Dissipation @T, = 25C Pp 150 Ww Derate above 25C 1.2 wc Operating and Storage Junction Ty .Ts1 C Temperature Range -55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rjc 0.83 c PIN 1.BASE FIGURE -1 POWER DERATING Te , TEMPERATURE(C) 150 @ 125 E SJ <x = 100 IN 9 < 75 IN Oo. NY 3 N eo XS Ww 9 0 2 50 7 100 12 150 2.COLLECTOR 3.EMITTER MILLIMETERS DIM MIN MAX A 20.63 | 22.38 B 15.38 | 16.20 c 1.90 2.70 D 5.10 6.10 E 1481 | 15.22 F 11.72 | 1284 G 4.20 450 H 1.82 2.46 | 2.92 3.23 J 0.89 1.53 K 5.26 5.66 L 1850 | 21.50 M 4.68 5.36 N 2.40 2.80 oO 3.25 3.65 P 055 0.702SA1215 PNP ee ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Vier)ceo Vv (I= 25 mA, I,= 0 ) 160 Collector Cutoff Current lepo uA ( Veg= 160 V, I= 0) 100 Emitter Cutoff Current leso uA ( Vep= 5.0 V, I= 0) 100 ON CHARACTERISTICS (1) DC Current Gain (Ip= 5.0 A, Veg= 4.0V ) hFE 50 Collector-Emitter Saturation Voltage Vee{saty V (Ig= 5.0 A, I= 500mA ) 2.0 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product f, MHz (1, =2.0A, Veg = 12 V, f = 1.0 MHz ) 10 SWITCHING CHARATERISTICS Turn-on Time Vec= 60 V, Ip= 5.0A t on 0.25(typ) us Ip, -lgo>= 500 mA St Ti Bi "82 t 0.85) us orage Time R= 12 ohm s (typ) Fall Time ty 0.25(typ) us (1) Pulse Test: Pulse Width =300 us,Duty Cycle = 2.0%2SA1215 PNP a ACTIVE-REGION SAFE OPERATING AREA (SOA) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate = Ico-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Typiq=150 C;T is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided SINGLE NONREPETITIVE Tupns150C,At high case temperatures, thermal limita - PULSE T.#25C tion yill reduce the power that can be handled to values CURVES MUST BE DERA less than the limitations imposed by second breakdown. LINEARLY WITH INCREASE IN TEMPERATURE Ie Ic, COLLECTOR CURRENT (Amp.) o 0.1 20 3.0 0 7.0 10 200 (30 50 70 100 200 Vce , COLLECTOR EMITTER (VOLTS) VCE(sat) - Ip Ic - Vee 3.0 oO 5 = = W < < 5 ol Ww 8 % > m 5 3 E 5 Fi 5 w Ww o 10 a 9 1 a 8 6 | F 8 o y > 9 0 0.2 0.4 06 08 1.0 0 05 1 15 2 25 3 35 4 ls, BASE CURRENT (A) Vce , COLLECTOR-EMITTER VOLTAGE (V) fr- ic DC CURRENT GAIN # 50 < z 9 3 = 5 & 2 a W Ww we wz aw e 3 g E > 3 E 3 3 F < 4 0.02003 005 Of 0203 05 10 20 30 50 10 0030.05 Of 0203 05 10 20 30 50 10 20 le, COLLECTOR CURRENT (A) le , COLLECTOR CURRENT (AMP)