MPS2907ARLRP - ON Semiconductor - Datasheet.Directory

 Semiconductor Components Industries, LLC, 2001

October, 2001 – Rev. 0 1Publication Order Number:

MPS2907A/D

MPS2907A

Preferred Device

General Purpose

Transistors

PNP Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage VCEO –60 Vdc

Collector–Base Voltage VCBO –60 Vdc

Emitter–Base V oltage VEBO –5.0 Vdc

Collector Current – Continuous IC–600 mAdc

Total Device Dissipation

@ TA = 25°C

Derate above 25°C

PD625

5.0 mW

mW/°C

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

PD1.5

12 Watts

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg –55 to

+150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction to Ambient RθJA 200 °C/W

Thermal Resistance,

Junction to Case RθJC 83.3 °C/W

Device Package Shipping

ORDERING INFORMATION

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TO–92

CASE 29

STYLES 1, 14

Preferred devices are recommended choices for future use

and best overall value.

MPS2907A TO–92 5000 Units/Box

COLLECTOR

BASE

EMITTER

MPS2907ARLRA TO–92 2000/Tape & Reel

MPS2907ARLRE TO–92 2000/Ammo Pack

MPS2907ARLRM TO–92 2000/Ammo Pack

MPS2907ARLRP TO–92 2000/Ammo Pack

STYLE 1

Y = Year

WW = Work Week

MARKING DIAGRAMS

MPS2

907A

YWW

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (Note 1.)

(IC = –10 mAdc, IB = 0) V(BR)CEO –60 – Vdc

Collector–Base Breakdown Voltage

(IC = –10 Adc, IE = 0) V(BR)CBO –60 – Vdc

Emitter–Base Breakdown Voltage

(IE = –10 Adc, IC = 0) V(BR)EBO –5.0 – Vdc

Collector Cutoff Current

(VCE = –30 Vdc, VEB(off) = –0.5 Vdc) ICEX – –50 nAdc

Collector Cutoff Current

(VCB = –50 Vdc, IE = 0)

(VCB = –50 Vdc, IE = 0, TA = 150°C)

ICBO –

––0.01

–10

µAdc

Base Current

(VCE = –30 Vdc, VEB(off) = –0.5 Vdc) IB– –50 nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = –0.1 mAdc, VCE = –10 Vdc)

(IC = –1.0 mAdc, VCE = –10 Vdc)

(IC = –10 mAdc, VCE = –10 Vdc)

(IC = –150 mAdc, VCE = –10 Vdc) (Note 1.)

(IC = –500 mAdc, VCE = –10 Vdc) (Note 1.)

hFE 75

100

–

300

–

Collector–Emitter Saturation Voltage (Note 1.)

(IC = –150 mAdc, IB = –15 mAdc)

(IC = –500 mAdc, IB = –50 mAdc)

VCE(sat) –

––0.4

–1.6

Vdc

Base–Emitter Saturation Voltage (Note 1.)

(IC = –150 mAdc, IB = –15 mAdc)

(IC = –500 mAdc, IB = –50 mAdc)

VBE(sat) –

––1.3

–2.6

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product (Notes 1. and 2.),

(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) fT200 – MHz

Output Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo – 8.0 pF

Input Capacitance

(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo – 30 pF

SWITCHING CHARACTERISTICS

Turn–On Time (VCC = –30 Vdc, IC = –150 mAdc,

I 15 Ad ) (Fi 1 d 5)

ton – 45 ns

Delay Time

CC C

IB1 = –15 mAdc) (Figures 1 and 5) td– 10 ns

Rise Time tr– 40 ns

Turn–Off Time (VCC = –6.0 Vdc, IC = –150 mAdc,

I I 15 Ad ) (Fi 2)

toff – 100 ns

Storage Time

CC C

IB1 = IB2 = 15 mAdc) (Figure 2) ts– 80 ns

Fall Time tf– 30 ns

1. Pulse Test: Pulse Width  300 s, Duty Cycle  2%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

MPS2907A

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-16 V

200 ns

1.0 k

200

-30 V

TO OSCILLOSCOPE

RISE TIME ≤ 5.0 ns

+15 V -6.0 V

1.0 k 37

50 1N916

1.0 k

200 ns

-30 V

TO OSCILLOSCOPE

RISE TIME ≤ 5.0 ns

INPUT

Zo = 50 Ω

PRF = 150 PPS

RISE TIME ≤ 2.0 ns

P.W. < 200 ns

INPUT

Zo = 50 Ω

PRF = 150 PPS

RISE TIME ≤ 2.0 ns

P.W. < 200 ns

Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit

TYPICAL CHARACTERISTICS

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.7

1.0

3.0

0.2

-0.1

TJ = 125°C

25°C

-55°C

VCE = -1.0 V

VCE = -10 V

hFE, NORMALIZED CURRENT GAIN

2.0

-0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500

Figure 4. Collector Saturation Region

IB, BASE CURRENT (mA)

-0.4

-0.6

-0.8

-1.0

-0.2

V , COLLECTOR-EMITTER VOLTAGE (VOLTS)

IC = -1.0 mA

-0.005

-10 mA

-0.01

-100 mA -500 mA

-0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50

MPS2907A

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TYPICAL CHARACTERISTICS

Figure 5. Turn–On Time

IC, COLLECTOR CURRENT

300

-5.0

Figure 6. Turn–Off Time

IC, COLLECTOR CURRENT (mA)

-5.0

t, TIME (ns)

200

100

7.0

5.0

3.0

-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500

2.0 V

td @ VBE(off) = 0 V

VCC = -30 V

IC/IB = 10

TJ = 25°C

500

300

100

7.0

5.0

-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500

200

t′s = ts - 1/8 tf

VCC = -30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

TYPICAL SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C

Figure 7. Frequency Effects

f, FREQUENCY (kHz)

0.01

Figure 8. Source Resistance Effects

Rs, SOURCE RESISTANCE (OHMS)

NF, NOISE FIGURE (dB)

f = 1.0 kHz

IC = -50 µA

-100 µA

-500 µA

-1.0 mA

Rs = OPTIMUM SOURCE RESISTANCE

8.0

6.0

4.0

2.0

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

8.0

6.0

4.0

2.0

050 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k

IC = -1.0 mA, Rs = 430 Ω

-500 µA, Rs = 560 Ω

-50 µA, Rs = 2.7 kΩ

-100 µA, Rs = 1.6 kΩ

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TYPICAL SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C

Figure 9. Capacitances

REVERSE VOLTAGE (VOLTS)

Figure 10. Current–Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

C, CAPACITANCE (pF)

-0.1

2.0

Figure 11. “On” Voltage

IC, COLLECTOR CURRENT (mA)

-1.0

Figure 12. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = -10 V

RVC for VCE(sat)

fT, CURRENT-GAIN  BANDWIDTH PRODUCT (MHz

)

COEFFICIENT (mV/ °C)

7.0

5.0

3.0

-0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30

400

300

200

100

-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000

-0.8

-0.6

-0.4

-0.2

-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500

+0.5

-0.5

-1.0

-1.5

-2.0

-2.5

-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500

Ceb

Ccb

VCE = -20 V

TJ = 25°C

RVB for VBE

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PACKAGE DIMENSIONS

TO–92

TO–226AA

CASE 29–11

ISSUE AL NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X–X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 --- 12.70 ---

L0.250 --- 6.35 ---

N0.080 0.105 2.04 2.66

P--- 0.100 --- 2.54

R0.115 --- 2.93 ---

V0.135 --- 3.43 ---

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

STYLE 14:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

MPS2907A

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Notes

MPS2907A

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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

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MPS2907A/D

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