MPS2907A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 1.)
(IC = –10 mAdc, IB = 0) V(BR)CEO –60 – Vdc
Collector–Base Breakdown Voltage
(IC = –10 Adc, IE = 0) V(BR)CBO –60 – Vdc
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0) V(BR)EBO –5.0 – Vdc
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc) ICEX – –50 nAdc
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0, TA = 150°C)
ICBO –
––0.01
–10
µAdc
Base Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc) IB– –50 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc) (Note 1.)
(IC = –500 mAdc, VCE = –10 Vdc) (Note 1.)
hFE 75
100
100
100
50
–
–
–
300
–
–
Collector–Emitter Saturation Voltage (Note 1.)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat) –
––0.4
–1.6
Vdc
Base–Emitter Saturation Voltage (Note 1.)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat) –
––1.3
–2.6
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (Notes 1. and 2.),
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) fT200 – MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo – 8.0 pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo – 30 pF
SWITCHING CHARACTERISTICS
Turn–On Time (VCC = –30 Vdc, IC = –150 mAdc,
ton – 45 ns
Delay Time
IB1 = –15 mAdc) (Figures 1 and 5) td– 10 ns
Rise Time tr– 40 ns
Turn–Off Time (VCC = –6.0 Vdc, IC = –150 mAdc,
toff – 100 ns
Storage Time
IB1 = IB2 = 15 mAdc) (Figure 2) ts– 80 ns
Fall Time tf– 30 ns
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.