SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching Applications * 4V drive * Low on-resistance: Unit: mm Ron = 790m (max) (@VGS = -4 V) 2.10.1 Ron = 390m (max) (@VGS = -10 V) Unit Drain-Source voltage VDS -30 V Gate-Source voltage VGSS 20 V DC ID -1.1 Pulse IDP -2.2 PD (Note 1) 800 PD (Note 2) 500 Drain power dissipation 1 3 2 A 0.70.05 Drain current +0.1 0.3 -0.05 Rating 0.1660.05 Symbol 2.00.1 Characteristic 0.650.05 1.70.1 Absolute Maximum Ratings (Ta = 25C) mW Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C 1: Gate 2: Source 3: Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on ceramic board. 2 (25.4 mm x 25.4 mm x 0.8 mm, Cu Pad: 645 mm ) Note 2: Mounted on FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 645 mm ) UFM JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-Source breakdown voltage Symbol Test Conditions Min Typ. Max V (BR) DSS ID = -1 mA, VGS = 0 -30 V (BR) DSX ID = -1 mA, VGS = +20 V -15 Unit V Drain cut-off current IDSS VDS = -30 V, VGS = 0 -1 A Gate leakage current IGSS VGS = 16V, VDS = 0 1 A -0.8 -1.8 V S Gate threshold voltage Vth Forward transfer admittance Yfs Drain-Source on-resistance RDS (ON) VDS = -5 V, ID = -0.1 mA VDS = -5 V, ID =- 0.5 A (Note3) 0.5 1.0 ID = -0.5 A, VGS = -10 V (Note3) 310 390 ID = -0.5 A, VGS = -4 V (Note3) 610 790 m Input capacitance Ciss VDS = -15 V, VGS = 0, f = 1 MHz 86 pF Output capacitance Coss VDS = -15 V, VGS = 0, f = 1 MHz 25 pF Reverse transfer capacitance Crss VDS = -15 V, VGS = 0, f = 1 MHz 14 pF ton VDD = -15 V, ID = -0.5 A, 14 toff VGS = 0 to -4 V, RG = 10 8.5 0.85 1.2 Switching time Turn-on time Turn-off time Drain-Source forward voltage VDSF ID = 1.1A, VGS = 0 V Note3: Pulse test (Note3) ns V Start of commercial production 2005-02 1 2014-03-01 SSM3J112TU Switching Time Test Circuit (a) Test circuit 0 (b) VIN OUT 0V 10% IN RG -4V 10 s (c) VOUT VDD VDD = -10 V RG = 4.7 Duty 1% VIN: tr, tf < 5 ns Common Source Ta = 25C Marking 90% -4 V RL VDS (ON) 90% 10% VDD tr ton tf toff Equivalent Circuit (top view) 3 3 JJ5 1 2 1 2 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID=-0.1mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Take this into consideration when using the device. Handling Precaution When handling individual devices which are not yet mounted on a circuit board, be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2014-03-01 SSM3J112TU ID - VDS ID - VGS -2 Common Source Ta = 25C -4.5 -10 -10000 -1000 (mA) -3.5 Drain current ID Drain current ID (A) -4.0 -1.5 -1 -3.0 -0.5 VGS = -2.5 V 0 0 -0.5 -1 -1.5 Drain-Source voltage Common Source VDS = -5 V -100 -25C Ta = 100C -10 25C -1 -0.1 -0.01 0 -2 -1 -2 Gate-Source voltage VDS (V) RDS (ON) - ID -5 VGS (V) RDS (ON) - VGS 1 2 Common Source Common Source Ta = 25C ID = -0.5 A VGS = -4 V 0.8 Drain-Source on resistance RDS (ON) () Drain-Source on resistance RDS (ON) () -4 -3 0.6 0.4 -10 V 0.2 1.6 1.2 0.8 Ta = 100C 0.4 25C -25C 0 0 -0.5 -1.0 -1.5 0 0 -2.0 -5 Drain current ID (A) -10 -15 Gate-Source voltage RDS (ON) - Ta Vth - Ta Common Source Common Source Vth (V) VGS = -4.0 V Gate threshold voltage Drain-Source on resistance RDS (ON) () ID = -0.5 A 0.8 0.6 -10 V 0.4 0.2 0 -25 VGS (V) -3 1.2 1 -20 0 25 50 75 100 125 ID = -0.1 mA -2 -1.5 -1 -0.5 0 -25 150 VDS = -5 V -2.5 0 25 50 75 100 125 150 Ambient temperature Ta (C) Ambient temperature Ta (C) 3 2014-03-01 SSM3J112TU |Yfs| - ID C - VDS 500 300 0.3 0.1 0.01 0.03 (pF) 1 100 Capacitance C Forward transfer admittance Yfs (S) 3 50 -10 -100 30 Coss 10 Crss Common Source 5 Common Source VDS = -5 V 3 Ta = 25C f = 1 MHz VGS = 0 V 1 -0.1 Ta = 25C 0.001 -1 Ciss -1000 -10000 Drain current ID (mA) -1 -10 Drain-Source voltage Dynamic input characteristic (V) 300 Common Source ID = -1 A Ta = 25C Switching time t (ns) VGS (V) Gate-Source voltage VDS t - ID -10 -8 -100 -12 V -6 VDD = -24 V -4 Common Source VDD = -15 V VGS = 0 -4 V Ta = 25C RG = 10 100 toff 30 tf ton 10 -2 tr 0 0 1 2 3 -0.01 3 -0.03 Total gate charge Qg (nC) IDR - VDS Drain power dissipation PD(mW) Drain reverse current IDR (A) Ta = 25C D IDR G -1.2 S -0.8 -0.4 0 0 0.2 0.4 0.6 Drain-Source voltage 0.8 -1 -3 PD - Ta 1000 Common Source -1.6 -0.3 Drain current ID (A) -2 VGS = 0 -0.1 b 800 a: mounted on FR4 board (25.4mmx25.4mmx1.6mm) Cu Pad :25.4mmx25.4mm b:mounted on ceramic board (25.4mmx25.4mmx0.8mm) Cu Pad :25.4mmx25.4mm 600 a 400 200 0 1 0 VDS (V) 4 20 40 60 80 100 120 140 160 Ambient temperature Ta(C) 2014-03-01 SSM3J112TU Rth - tw Transient thermal impedance Rth(C/W) 1000 c b a 100 Single pulse a:Mounted on ceramic board (25.4mmx25.4mmx0.8mm) Cu Pad :25.4mmx25.4mm b:Mounted on FR4 board (25.4mmx25.4mmx1.6mm) Cu Pad :25.4mmx25.4mm c:Mounted on FR4 Board (25.4mmx25.4mmx1.6mm) Cu Pad :0.45mmx0.8mmx3 10 1 0.001 0.01 0.1 1 10 Pulse w idth tw (S) 100 1000 5 2014-03-01 SSM3J112TU RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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