S6A13 TOSHIBA Thyristor Silicon Planar Type S6A13 Condenser Discharge Control Applications Unit: mm * FWD included between cathode and anode * Critical rate of rise of ON-state current: di/dt = 750 A/s * Repetitive peak surge ON-state current: ITRM = 500 A (tw = 2 s) * Repetitive peak OFF-state voltage: VDRM = 800 V * Gate trigger current: IGT = 30 mA (max) Absolute Maximum Ratings Characteristics Symbol Rating Unit Repetitive peak OFF-state voltage VDRM 800 V Repetitive peak surge ON-state current (Note 1) ITRM 500 A Repetitive peak surge forward current (Note 1) IFRM 500 A Critical rate of rise of ON-state current (Note 1) di/dt 750 A/s Peak gate power dissipation PGM 5 W PG (AV) 0.5 W Peak forward gate voltage VFGM 10 V Peak reverse gate voltage VRGM -5 V Peak forward gate current IGM 2 A Tj -40~125 C Tstg -40~150 C Average gate power dissipation Junction temperature Storage temperature range JEDEC JEITA TOSHIBA 13-10J1B Weight: 1.5 g (typ.) Note 1: VD < = 0.8 x rated, Tc = 85C, igp > = 60 mA, tgw > = 10 s, tgr < = 150 ns Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking S6A13 Characteristics indicator Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-14 S6A13 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Repetitive peak OFF-state current IDRM VDRM = Rated 10 A Peak ON-state voltage (thyristor) VTM ITM = 25 A 1.5 V Peak forward voltage (diode) VFM IFM = 25 A 2.0 V Gate trigger voltage VGT Gate trigger current IGT Gate non-trigger voltage VGD Critical rate of rise of OFF-state voltage dv/dt Holding current IH Thermal resistance (junction to ambient) Rth (j-a) 1.0 V 30 mA 0.2 V 50 V/s VD = 6 V, ITM = 1 A 35 mA DC 70 C/W VD = 6 V, RL = 10 VD = Rated, Tc = 125C VDRM = Rated, Tc = 125C Exponential Rise Test Circuit Examples C VD IP 0.5 IP L S6A13 R t tw = LC , IP = tw = 2 s di/dt = VD L/C 0.5 IP t Equivalent Circuit ANODE GATE CATHODE 2 2006-11-14 S6A13 IGT (Tc)/IGT (Tc = 25C) - Tc VGT (Tc)/VGT (Tc = 25C) - Tc (typical) 2.5 (typical) 2.0 VD = 6 V VD = 6 V RL = 10 RL = 10 VGT (Tc)/VGT (Tc = 25C) IGT (Tc)/IGT (Tc = 25C) 2.0 1.5 1.0 0.5 0.0 -60 -20 20 60 100 1.5 1.0 0.5 0.0 -60 140 -20 60 Pulse trigger characteristics (typical) 2.5 (typical) Resistance load VD = 6 V ITM = 1 A 2.0 4 1.5 3 RL = 10 Tc = 25C Rectangular waveform iGT(tw)/IGT IH (Tc)/IH (Tc = 25C) 140 5 VD = 6 V 1.0 0.5 0.0 -60 iGT tw 2 1 -20 20 60 100 0 0.1 140 Case temperature Tc (C) 1 10 Gate trigger pulse width iT - vT (thyristor) 100 tw (s) iF - vF (diode) 1000 Instantaneous forward current iF (A) 1000 Instantaneous ON-state current iT (A) 100 Case temperature Tc (C) Case temperature Tc (C) IH (Tc)/IH (Tc = 25C) - Tc 20 100 10 Tj = 125C 1 0.0 0.5 1.0 25C 1.5 2.0 Instantaneous ON-state voltage 2.5 vT 100 10 Tj = 125C 1 0.0 3.0 (V) 1.0 25C 2.0 3.0 4.0 Instantaneous forward voltage vF 3 5.0 6.0 (V) 2006-11-14 S6A13 RESTRICTIONS ON PRODUCT USE 20070701-EN * The information contained herein is subject to change without notice. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2006-11-14