BB 833 Silicon Tuning Diode * Extended frequency range up to 2.5 GHz; special design for use in TV-sat indoor units 2 * High capacitance ratio 1 VPS05176 Type Marking Pin Configuration Package BB 833 white X 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage (R 5k) VRM 35 Forward current IF 20 mA Operating temperature range Top -55 ... 150 C Storage temperature Tstg -55 ... 150 1 Value Unit V Apr-30-1998 BB 833 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 20 IR - - 500 DC characteristics Reverse current nA VR = 30 V Reverse current VR = 30 V, TA = 85 C AC characteristics pF CT Diode capacitance VR = 1 V, f = 1 MHz 8.5 9.3 10 VR = 28 V, f = 1 MHz 0.6 0.75 0.9 11 12.4 - - CT /CT - - 3 % rs - 1.8 - Ls - 1.8 - nH Capacitance ratio CT1 /CT28 VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 1 V, f = 100 MHz Series inductance 1) In-line matching. For details please refer to Application Note 047 2 Apr-30-1998 BB 833 Diode capacitance CT = f (VR) Temperature coefficient of the diode f = 1MHz capacitance TCc = f (VR) 12 10 -3 EHD07121 pF 10 1/C 8 TCc CT BB 833 10 -4 6 4 2 0 10 0 10 1 10 -5 -1 10 10 2 V 10 0 10 1 V 10 2 VR VR 3 Apr-30-1998