Product Description
Broomfield, CO 80021 1 EDS-103839 Rev D
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com
SBB-5089
SBB-5089Z
0.05-6 GHz, Cascadable
Active Bias InGaP/GaAs HBT MMIC Amplifier
Product Features
• Available in Lead free, RoHS compliant, & Green packaging
• Wideband Flat Gain to 4GHz: +/-1.1dB
• P1dB = 20.4 dBm @ 1950MHz
• Single Fixed 5V Supply
• Robust 1000V ESD, Class 1C
• Patented Thermal Design & Patent Pending Bias Circuit
• Low Thermal Resistance
• MSL 1 moisture rating
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• Wideband Intrumentation
• Wireless Data, Satellite Terminals
Sirenza Microdevices’ SBB-5089 is a high performance InGaP HBT MMIC
amplifier utilizing a Darlington configuration with an active bias network.
The active bias network provides stable current over temperature and
process Beta variations. Designed to run directly from a 5V supply, the
SBB-5089 does not require a dropping resistor as compared to typical
Darlington amplifiers. The SBB-5089 product is designed for high linearity
5V gain block applications that require small size and minimal external
components. It is internally matched to 50 ohms.
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU
Directive 2002/95. This package is also manufactured with green molding
compounds that contain no antimony trioxide nor halogenated fire retardants.
Test Conditions: VS = 5 V ID = 80 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
TL = 25ºC ZS = ZL = 50 Ohms Measured with Bias Tees
Pb
RoHS Compliant
& PackageGreen
Gain & Return Loss vs. Frequency (w/ BiasTees)
-40
-30
-20
-10
0
10
20
30
0123456
Frequency (GHz)
dB
S22
S21
S11
Symbol Parameters Units Frequency Min. Typ. Max.
850 MHz 19 20.5 22
S21 Small Signal Gain dB 1950 MHz 18.5 20 21.5
6000 MHz 14.5 16 17.5
850 MHz 20.5
1950 MHz 19 20.5
850 MHz 38.5
1950 MHz 33 35
Bandwidth S11, S22: Minimum 10dB Return Loss (typ.) MHz 3000
S11 Input Return Loss dB 1950 MHz 10 14
S22 Output Return Loss dB 1950 MHz 10 14
S12 Reverse Isolation dB 1950 MHz 23.3
NF Noise Figure dB 1950 MHz 4.2 4.9
VD Device Operating Voltage V 5 5.25
ID Device Operating Current mA 72 80 92
RTH, j-l Thermal Resistance (junction - lead) °C/W 69.9
Test Conditions: VD = 5V ID = 80mA Typ. OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm
TL = 25°C ZS = ZL = 50 Ohms Tested with Bias Tees
P1dB Output Power at 1 dB Compression
IP3 Third Order Intercept Point
dBm
dBm
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Broomfield, CO 80021 2 EDS-103839 Rev D
SBB-5089 0.05-6 GHz Cascadable MMIC Amplifier
303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com
Test Conditions:
Noise Figure @ 25C
0
1
2
3
4
5
6
7
8
0.511.522.533.54
Frequency (GHz)
dB
Avg. BiasTee
Avg. AppCkt
Typical RF Performance at Key Operating Frequencies (With .5-3.5 GHz Application Circuit)
Symbol Parameter Unit 500 850 1950 2500 3500 4000
S21 Small Signal Gain dB 20.8 20.8 20.1 19.8 18.7 17.8
OIP3 Output Third Order Intercept Point dBm 38.6 39.2 34.9 32.8 29.4 26.8
P1dB Output Power at 1dB Compression dBm 20.5 20.4 20.4 19.4 16.9 14.7
S11 Input Return Loss dB 27.2 22.7 14.6 12.9 10.6 11.6
S22 Output Return Loss dB 31.8 21.5 13.5 12.0 13.5 27.5
S12 Reverse Isolation dB 22.7 22.8 23.4 23.7 24.7 25.7
NF Noise Figure dB 3.8 3.8 4.1 4.1 4.3 4.6
Frequency (MHz)
Test Conditions: VCC = 5V ID = 80mA Typ. OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm
TL = 25°C ZS = ZL = 50 Ohms
P1dB vs. Frequency with App. Ckt.
5
10
15
20
25
0.511.522.533.54
Frequency (GHz)
dBm
P1dB 25C
P1dB -40C
P1dB 85C
OIP
3
vs. Frequency with App. Ckt.
15
20
25
30
35
40
45
0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
dBm
IP3 25C
IP3 -40C
IP3 85C
Broomfield, CO 80021 3 EDS-103839 Rev D
SBB-5089 0.05-6 GHz Cascadable MMIC Amplifier
303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com
S-Parameters taken with Bias Tees over Temperature
Current vs. Voltage Over Temp. (Bias Tees)
55
65
75
85
95
105
4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 5.5
Voltage (V)
Current (mA)
25C
-40C
85C
Device Current over Temperature (w/Bias Tees)
S11 vs. Frequency
-40
-30
-20
-10
0
0123456
Frequency (GHz)
dB
25C
-40C
85C
S21 vs. Frequency
0
5
10
15
20
25
0123456
Frequency (GHz)
dB
25C
-40C
85C
S12 vs. Frequency
-40
-35
-30
-25
-20
-15
-10
0123456
Frequency (GHz)
dB
25C
-40C
85C
S22 vs. Frequency
-50
-40
-30
-20
-10
0
0123456
Frequency (GHz)
dB
25C
-40C
85C
Id vs. Temperature
78
80
82
84
-40C 25C 85C
Temperature
Current (mA)
Broomfield, CO 80021 4 EDS-103839 Rev D
SBB-5089 0.05-6 GHz Cascadable MMIC Amplifier
303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com
Current vs. Voltage Over Temp. (App. Ckt.)
55
65
75
85
95
105
4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 5.5
Voltage (V)
Current (mA)
25C
-40C
85C
Id vs. Temperature
78
80
82
84
-40C 25C 85C
Temperature
Current (mA)
Device Current over Temperature (w/App. Ckt.)
0.5 to 3.5GHz Application Circuit S-Parameters over Temperature
S11 vs. Frequency
-40
-30
-20
-10
0
01234
Frequency (GHz)
dB
25C
-40C
85C
S21 vs. Frequency
0
5
10
15
20
25
01234
Frequency (GHz)
dB
25C
-40C
85C
S12 vs. Frequency
-40
-35
-30
-25
-20
-15
-10
01234
Frequency (GHz)
dB
25C
-40C
85C
S22 vs. Frequency
-50
-40
-30
-20
-10
0
01234
Frequency (GHz)
dB
25C
-40C
85C
Broomfield, CO 80021 5 EDS-103839 Rev D
SBB-5089 0.05-6 GHz Cascadable MMIC Amplifier
303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com
Application Schematic
RF in RF out
1 uF
CB
CB
CB
VS
LC
1
2
3
4
1200
pF
SBB-5089
Application Circuit Element Values
Evaluation Board Layout
Mounting Instructions
1. Solder the copper pad on the backside of the device package to
the ground plane.
2. Use a large ground pad area with many plated through-holes as
shown.
3. We recommend 1 or 2 ounce copper. Measurement for this
datasheet were made on a 31 mil thick FR-4 board with 1
ounce copper on both sides.
ESD Class 1C
Appropriate precautions in handling, packaging and testing
devices must be observed.
Absolute Maximum Ratings
MSL (Moisture Sensitivity Level) Rating: Level 1
Parameter Absolute Limit
Ma. Dvice Current (ID)100 mA
Max Device Voltage (VD)5.5 V
Max. RF Input Power +12 dBm
Max. Operating Dissipated
Power 0.55 W
Max. Junction Temp. (TJ)+150°C
Operating Temp. Range (TL)-40°C to +85°C
Max. Storage Temp. +150°C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating
values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l TL=TLEAD
Reference
Designator
Frequency (MHz)
500 to 3500
CB68pF
LC82nH 1008CS
+
Broomfield, CO 80021 6 EDS-103839 Rev D
SBB-5089 0.05-6 GHz Cascadable MMIC Amplifier
303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com
Suggested PCB Pad Layout
Dimensions in inches [millimeters]
Bottom View
Side View
BB5
1
2
3
123
4
Lead Free
Package Marking
BB5Z
1
2
3
123
4
Tin-Lead
Part Number Ordering Information
Nominal Package Dimensions
Dimensions in inches (millimeters)
Refer to package drawing posted at www.sirenza.com for tolerances
Part Number Reel Size Devices / Reel
SBB-5089 7" 1000
SBB-5089Z 7" 1000
Pin # Function Description
1RF IN
RF input pin. This pin requires the use of
an external DC blocking capacitor chosen
for the frequency of operation.
2, 4 GND
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible
3RF OUT/
BIAS
RF output and bias pin. DC voltage is
present on this pin, therefore a DC blocking
capacitor is necessary for proper operation.