PNP SILICON POWER TRANSISTOR 2SA1156 NEC / DESCRIPTION The 2SA1156 is suitable for Low Power Switching regulator, PACKAGE DIMENSIONS DC-DC converter and High Voltage Switch. in millimeters (inches) . 8.5 MAX. FEATURES High Breakdown Voltage. (0.334 MAX.) 2.8 MAX. Low Collector Saturation Voltage. $3220.21 0.126) (0.210 MAX.) High Speed Switching. Ye |r 3 % . t Complementary to the NEC 2SC2752 NPN Transistor. ant] s|= aT o S 123||/ %e6 ABSOLUTE MAXIMUM RATINGS Maximum Temperatures 1.21 Tz z (0.047) [TTT S Storage Temperature ............. 55 to+150 C oe 3 N wo Junction Temperature .......... +150 C Maximum | 28 ial = . . . , Nw Maximum Power Dissipations 0.828:08 i Total Power Dissipation (Tg = 25C) ....... 1.0 wW_ | (0.081) sas (0.047) Total Power Dissipation (Tg = 25C) ....... 10 W (0.090) (0.090) Maximum Voltages and Currents (Tg = 25 C) ep Vcgo Collector to Base Voltage ....... -400 V Veceo Collector to Emitter Voltage... .. 400 V 1. Emitter . 2. Collector connected Veso Emitter to Base Voltage ........ -7.0 V to mounting plane Ie(oc) Collector Current ............ 05 A 3. Base ! Ic(putse) Collector Current ......... 1.1.0 A Ipipc) Base Current.......... tee eee 0.25 A *PWS10 ms, Duty Cycle <50 % ELECTRICAL CHARACTERISTICS (Tg = 25 C) SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS hee ** DC Current Gain 30 200 - Vce = 5.0 V, Ilo = 100 mA ton Turn On Time 1.0 BS Io = 100 mA, RL = 1.5k2 -tetg Storage Time 4.0 us ig, =10 mA, Iga = 20 MA, Voc = 150V t Falt Time 1.0 Hs W = 50 ys, Duty Cycle <2 % : : VcEO(SUS) Collector to Emitter Sustaining Voltage 400 v Ic = -100 mA, Ig = 10 mA, L = 20 mH . ws Ic = 200 mA, Ig1 = tp2=20mA VCEX(SUS) Collector to Emitter Sustaining Voltage 400 VBE(OFF) = 5-0 V, L = 10 mH, Clamped. IcBO Collector Cutoff Current 100 BA Vecp = 400 V, Ig =O IcEX1 Collector Cutoff Current 100 BA Voge = ~400 V, VgE(OFF) = 1-5 V ICEX2 Collector Cutoff Current 1.0 mA Vee - 400 V, VBE(OFF) = 1.5 V, Ta = 125C lEBO Emitter Cutoff Current -10 BA Veg =-5.0V,Ilco=0 VcE(sat)** Collector Saturation Voltage 1.0 Vv Ie = -100 mA, Ig = -10mA VBE(sat)** Base Saturation Voltage 1.2 Vv I =100 mA, ig =-10mMA ! ** Pulsed / PW 3350 us, Duty Cycle <2 % Classification of hee Rank N M L K Range 30 to 60 40 to 80 60 to 120 100 to 200 | Test Conditions: Voce = 5.0 V, Io = 100mA 134NEC 2SA1156 TYPICAL CHARACTERISTICS (T, = 25 C) FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. 10 AMBIENT TEMPERATURE -1 = _ c o 8 < -2 A, = ae = 2 = -05 @ 6 @ * 6 0.1 o . . z 4 S ~0.05 Bo os sg 8 -0.01 2? i -0. | = a -0.00 0.00 0 1 150 ~1 -2 -5 10-20 50 -100-200-500- 1000 TaAmbient TemperatureC Vee Collector to Emitter VoltageV , REVERSE BIAS TRANSIENT THERMAL RESISTANCE SAFE OPERATING AREA = 100 2 | < a E- g r = % 10 5 8 4 et g a oS _ . o = -100 *. So i 3 a = = => - Sg a | _ s > rey ? Lo 01 c oO1m m 16m m 1 0 -100 ~ -300 -400 -500 PWPulse Width~s VcECollector to Emitter VoltageV : BASE AND COLLECTOR SATURATION Oe eee CURRENT > VOLTAGE vs. COLLECTOR CURRENT -1 1900 VcE=-5 V fb > \c/ig=10 500 Pulsed + -s Pulsed oD wv >a x : se 7? ! a O14 32> -1 E J se - @ 50 58 -05 . t a os oO = wnt o 2 -0. oO 20 55 02 CE(sat) 5 ol 5? -01 e | = & _oos 'c i ga x x Tt ~ 70.02 2s ll 8-00 HL nm monmmh mam m mm Mm wo nmoamnmnmomnmnm mmm m iCoilector CurrentA >> Iq Collector Current-A DERATING CURVE OF SAFE x OPERATING AREA + 100 5 5 80 Ss Lg oO : 3 = 60 a o 40b-4+- -4 oo Ss c 8 20 a ao | . 5 0 50 100 150 T,.Case TemperatureC COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE -0 <-04 = 2 5-0 3G 5 4-02 2 8 | -0.1 a) 0 - - - - 10 VoeCollector to Emitter VoltageV TURN ON TIME, STORAGE TIME AND FALL TIME vs. COLLECTOR CURRENT 1 w r eo 1 Be ow to a& Se a H= 0 Io _I ra ipi=jo: ~'B2=5 2 1008 Dotted Pe ic 0.02 lpi =~lB2=76 0.01 -10m -20m -50m -100m-200m m -1 i Collector Current A 135