PHD13003C,126 - NXP - Datasheet.Directory

1. Product profile

1.1 General description

High voltage, high speed, planar passivated NPN power switching transistor with

integrated anti-parallel emitter-collector diode in a SOT54 plastic package

1.2 Features and benefits

Fast switching

High typical DC current gain

High voltage capability

Integrated anti-parallel E-C diode

1.3 Applications

Compact fluorescent lamps (CFL)

Low power electro nic lighting ballasts

Off-line self-oscillating power supplies

(SOPS) for battery charging

1.4 Quick reference data

PHD13003C

NPN power transistor with integrated diode

Rev. 01 — 29 July 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

ICcollector current DC - - 1.5 A

Ptot total power

dissipation Tlead ≤25 °C; see Figure 1 --2.1W

VCESM collector-emitter

peak voltage VBE =0V --700V

Static characteristics

hFE DC current gain IC= 0.5 A; VCE =2V;

Tj=25°C 81725

Product data sheet Rev. 01 — 29 July 2010 2 of 12

NXP Semiconductors PHD13003C

NPN power transistor with integrated diode

2. Pinning information

3. Ordering information

4. Limiting values

Tabl e 2. Pinning information

Pin Symbol Description Simplified outline Graphi c sy mbol

1 B base

SOT54 (TO-92)

2 C collector

3Eemitter

123

sym13

Table 3. Ordering information

Type number Package

Name Description Version

PHD13003C TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54

Table 4. Limiting values

In accordance with the Absolute Maxi mum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCESM collector-emitter peak voltage VBE = 0 V - 700 V

VCBO collector-base voltage IE= 0 A - 700 V

VCEO collector-emitter voltage IB= 0 A - 400 V

ICcollector current DC - 1.5 A

ICM peak collector current - 3 A

IBbase current DC - 0.75 A

IBM peak base current - 1.5 A

Ptot total power dissipation Tlead ≤25 °C; see Figure 1 -2.1W

Tstg storage temperature -65 150 °C

Tjjunction temperature - 150 °C

VEBO emitter-base voltage IC= 0 A; I(Emitter) = 10 mA - 9 V

Product data sheet Rev. 01 — 29 July 2010 3 of 12

NXP Semiconductors PHD13003C

NPN power transistor with integrated diode

Fig 1. Normalized total power dissip ation as a function of lead temperatur e

Tlead (°C)

0 20015050 100

003aae644

120

Pder

(%)

Product data sheet Rev. 01 — 29 July 2010 4 of 12

NXP Semiconductors PHD13003C

NPN power transistor with integrated diode

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-lead) thermal resistance from

junction to lead see Figure 2 --60K/W

Rth(j-a) thermal resistance from

junction to ambient in free air; printed-circuit board

mounted; lead length = 4 mm - 150 - K/W

Fig 2. Transient thermal impedance from junction to lead as a function of pulse width

001aab451

102

10−1

Zth(j-lead)

(K/W)

10−2

tp (s)

10−511010−1

10−2

10−410−3

δ =

Product data sheet Rev. 01 — 29 July 2010 5 of 12

NXP Semiconductors PHD13003C

NPN power transistor with integrated diode

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

ICES collector-emitter cut-off

current VBE =0V; V

CE =700V --1mA

VBE =0V; V

CE =700V; T

j=100°C --5mA

ICEO collector-emitter cut-off

current VCE = 400 V; IB=0A; T

lead =25°C --0.1mA

IEBO emitter-base cut-off

current VEB =9V; I

C=0A; T

lead =25°C --1mA

VCEOsus collector-emitter

sustaining voltage IB=0A; I

C=1mA; L

C=25mH;

Tlead =25°C; see Figure 3; see Figure 4 400 - - V

VCEsat collector-emitter

saturati on voltage IC=0.5A; I

B= 0.1 A; Tlead =25°C --0.5V

IC=1A; I

B= 0.25 A; Tlead =25°C --1V

IC=1.5A; I

B= 0.5 A; Tlead =25°C --1.5V

VBEsat base-emitter saturation

voltage IC=0.5A; I

B= 0.1 A; Tlead =25°C --1V

IC=1A; I

B= 0.25 A; Tlead =25°C --1.2V

VFforward voltage IF= 0.5 A; Tj=25°C --1.5V

hFE DC current ga i n IC=0.5A; V

CE =2V; T

j= 25 °C 8 17 25

IC=1A; V

CE =2V; T

j=25°C 5915

Dynamic character istics

ton turn-on time IC=1A; I

Bon = 0.2 A; IBoff =-0.2A;

RL=75Ω; Tlead = 25 °C; resistive load;

see Figure 5; see Figure 6

--1µs

tsstorage time - - 4 µs

IC=1A; I

Bon = 0.2 A; VBB =-5V;

LB=1µH; T

lead = 25 °C; inductive load;

see Figure 7; see Figure 8

-0.8-µs

tffall time IC=1A; I

Bon = 0.2 A; IBoff =-0.2A;

RL=75Ω; Tlead = 25 °C; resistive load;

see Figure 5; see Figure 6

--0.7µs

IC=0.5A; I

Bon = 0.1 A; VBB =-5V;

LB=1µH; T

lead = 25 °C; inductive load;

see Figure 7; see Figure 8

-0.1-µs

Product data sheet Rev. 01 — 29 July 2010 6 of 12

NXP Semiconductors PHD13003C

NPN power transistor with integrated diode

Fig 3. Tes t cir cuit for collec to r-emitter sustaining

voltage Fig 4. Oscilloscope display for collector-emitter

sustaining voltage test waveform

Fig 5. Test circuit for resistive load switching Fig 6. Switchin g tim e s waveforms for re sistive load

001aab9

horizontal

1 Ω300 Ω

6 V

vertical

oscilloscope

50 V

100 Ω to 200 Ω

30 Hz to 60 Hz

001aab988

VCE (V)

min

VCEOsus

(mA)

100

250

001aab989

DUT

001aab99

10 %

90 %

ton toff

IBon

−IBoff

ICon

tr ≤ 30 ns

Product data sheet Rev. 01 — 29 July 2010 7 of 12

NXP Semiconductors PHD13003C

NPN power transistor with integrated diode

Fig 7. Test circuit for inducti ve load switch in g Fig 8. Switching times waveforms for inductive load

001aab99

VCC

DUT

IBon

VBB

001aab99

90 %

off

Bon

−I

Boff

Con

10 %

Product data sheet Rev. 01 — 29 July 2010 8 of 12

NXP Semiconductors PHD13003C

NPN power transistor with integrated diode

7. Package outline

Fig 9. Package outline SOT54 (TO-92)

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 5.2

5.0

0.48

0.40

0.45

0.38

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

(1)

max.

2.5

0.66

0.55

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43A 04-06-28

04-11-16

A L

0 2.5 5 mm

scale

b1L1

Plastic single-ended leaded (through hole) package; 3 leads SOT5

Product data sheet Rev. 01 — 29 July 2010 9 of 12

NXP Semiconductors PHD13003C

NPN power transistor with integrated diode

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PHD13003C v.1 20100729 Product data sheet - -

Product data sheet Rev. 01 — 29 July 2010 10 of 12

NXP Semiconductors PHD13003C

NPN power transistor with integrated diode

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) described in this document may hav e changed sinc e this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full informatio n see the relevant full dat a

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this d ocument is be lieved to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidenta l ,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support , life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors pro duct can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or application s and

therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference dat a is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associate d with t heir

applications and products.

NXP Semiconductors does not accept any liabili ty related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the object i ve specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 01 — 29 July 2010 11 of 12

NXP Semiconductors PHD13003C

NPN power transistor with integrated diode

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document ma y be interpret ed or

construed as an of fer to se ll product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) d escribed herein may

be subject to export control regulat i ons. Export might require a prior

authorization from national authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors prod uct is automotive qualified,

the product is not suitable for automotive use. It is neither qua lified nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y

liability, damages or failed product claims resulting from customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specif ications.

9.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

10. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an em ail to: salesaddresses@nxp.com

NXP Semiconductors PHD13003C

NPN power transistor with integrated diode

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 29 July 2010

Document identifier: PHD13003C

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

11. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .9

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .10

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

10 Contact information. . . . . . . . . . . . . . . . . . . . . .11