30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61N03F
SUMMARY
V(BR)DSS=30V; RDS(ON)=0.22V; ID=1.4A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•Low on-resistance
•Fast switching speed
•Low threshold
•Low gate drive
•SOT23 package
APPLICATIONS
•DC - DC Converters
•Power Management Functions
•Disconnect switches
•Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches) TAPE WIDTH (mm) QUANTITY
PER REEL
ZXM61N03FTA 7 8mm embossed 3000 units
ZXM61N03FTC 13 8mm embossed 10000 units
DEVICE MARKING
•N03
Top View
SOT23
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ISSUE 1 - JUNE 2004
ZXM61N03F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 30 V
Gate Source Voltage VGS ±20 V
Continuous Drain Current (VGS=10V; TA=25°C)(b)
(V
GS=10V; TA=70°C)(b) ID1.4
1.1 A
Pulsed Drain Current (c) IDM 7.3 A
Continuous Source Current (Body Diode) (b) IS0.8 A
Pulsed Source Current (Body Diode) ISM 7.3 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor PD625
5mW
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor PD806
6.4 mW
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 200 °C/W
Junction to Ambient (b) RθJA 155 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
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ZXM61N03F
CHARACTERISTICS
0.1 100
0.0001 0.1 10
0 80 160
VDS - Drain-Source Voltage (V)
Safe Operating Area
10m
100m
10
I
D
- Drain Current (A)
DC
1s
100ms
D=0.2
D=0.1
Thermal Resistance (°C/W)
180
80 D=0.5
0
Pulse Width (s)
Transient Thermal Impedance
Max Power Dissipation (Watts)
1.0
0.6
0
T - Temperature (°C)
Derating Curve
Refer Note (a)
Single Pulse
D=0.05
10ms
1ms
Thermal Resistance (°C/W)
Transient Thermal Impedance
0.0001
0
Pulse Width (s)10 1000
120
240
Single Pulse
D=0.5
D=0.05
D=0.2
D=0.1
1
101
0.8
0.4
0.2
20 40 60 100 120 140
Refer Note (b)
Refer Note (b) Refer Note (a)
20
40
60
100
120
140
160
0.001 0.01 1
200
160
40
80
0.001 0.01 0.1 1 100
100us
Refer Note (a)
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ISSUE 1 - JUNE 2004
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP.(3) MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 30 V ID=250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS 1µAVDS=30V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS
=± 20V, VDS
=0V
Gate-Source Threshold Voltage VGS(th) 1.0 V ID=250µA, VDS
= VGS
Static Drain-Source On-State Resistance
(1) RDS(on) 0.22
0.30 Ω
ΩVGS
=10V, ID=0.91A
VGS
=4.5V, ID=0.46A
Forward Transconductance (3) gfs 0.87 S VDS=10V,ID=0.46A
DYNAMIC (3)
Input Capacitance Ciss 150 pF VDS=25 V, VGS=0V,
f=1MHz
Output Capacitance Coss 35 pF
Reverse Transfer Capacitance Crss 15 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 1.9 ns
VDD
=15V, ID=0.91A
RG=6.2Ω, RD=16Ω
(refer to test
circuit)
Rise Time tr2.5 ns
Turn-Off Delay Time td(off) 5.8 ns
Fall Time tf3.0 ns
Total Gate Charge Qg4.1 nC VDS=24V,VGS=10V,
ID=0.91A
(refer to test
circuit)
Gate-Source Charge Qgs 0.4 nC
Gate-Drain Charge Qgd 0.63 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.95 V TJ=25°C, IS=0.91A,
VGS
=0V
Reverse Recovery Time (3) trr 11.0 ns TJ=25°C, IF=0.91A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Qrr 3.5 nC
NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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ZXM61N03F
ISSUE 1 - JUNE 2004
ZXM61N03F
5
0.1 1 10
1.5 2.5
VDS - Drain-Source Voltage (V)
Output Characteristics
1m
100m
10
I
D
- Drain Current (A)
VGS
9V
5V
10
1
0.01
4V
3.5V
3V
+25°C
0.01 1 100
VDS - Drain-Source Voltage (V)
Ouput Characteristics
10m
10
100u
I
D
- Drain Current (A)
+150°C
3V
VGS
2.5V
4V
2.0V
5V
VGS=4.5V
VGS=10V
10010
On-Resistance v Drain Current
ID- Drain Current (A)
0.1
0.1
1
10
Normalised RDS(on) and VGS(th)
v Temperature
Tj- Junction Temperature (°C)
0
1.0
2.0
Normalised R
DS(on)
and V
GS(th)
50-50
I
D
- Drain Current (A)
VGS - Gate-Source Voltage (V)
Typical Transfer Characteristics
0.1
3.5
T=25°C
T=150°C
VDS=10V
0
0.5
1.5
1
R
DS(on)
- Drain-Source On-Resistance ( Ω )
Source-Drain Diode Forward Voltage
VSD - Source-Drain Voltage (V)
0 0.2 0.8 1.2
100
100m
100µ
I
SD
- Reverse Drain Current (A)
1m
10m
1
10
0.4 0.6 1.0
2.5V
10m
1
100.1
1
100m
1m
100 150 200-100
T=25°C
T=150°C
RDS(on)
VGS(th)
VGS=10V
ID=0.91A
VGS=VDS
ID=250uA
TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2004
Basic Gate Charge Waveform Gate Charge Test Circuit
Switching Time Waveforms Switching Time Test Circuit
0.1 10 100
Coss
Crss
C - Capacitance (pF)
200
100
Ciss
0
VDS - Drain-Source Voltage (V)
Capacitance v Drain-Source Voltage
50
150
102.03.5
VGS - Gate-Source Voltage (V)
10 ID=0.91A
0
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
VDS=24V
250
2
4
6
8
0.5 1.0 1.5 2.5 3.0
Vgs=0V
f=1MHz
TYPICAL CHARACTERISTICS
ZXM61N03F
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ISSUE 1 - JUNE 2004
N
PACKAGE DIMENSIONS PAD LAYOUT DETAILS
DIM Millimetres Inches
Min Max Min Max
A 2.67 3.05 0.105 0.120
B 1.20 1.40 0.047 0.055
C– 1.10 – 0.043
D 0.37 0.53 0.0145 0.021
F 0.085 0.15 0.0033 0.0059
G NOM 1.9 NOM 0.075
K 0.01 0.10 0.0004 0.004
L 2.10 2.50 0.0825 0.0985
N NOM 0.95 NOM 0.037
ZXM61N03F
7
Zetex plc.
Fields New Road, Chadde rt on, Oldha m, OL9 -8NP, Unit ed Kingdom .
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - JUNE 2004
