TLP626BVF - TOSHIBA - Datasheet.Directory

TLP626,TLP626-2,TLP626-4

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TOSHIBA Photocoupler GaAs Ired & Photo-Transistor

TLP626, TLP626-2, TLP626-4

Programmable Controllers

AC / DC-Input Module

Telecommunication

The TOSHIBA TLP626, -2 and -4 consist of gallium arsenide infrared emitting

diodes connected in inverse parallel, optically coupled to a photo-transistor.

The TLP626-2 offers two isolated channels in an eight lead plastic DIP, while

the TLP626-4 provides four isolated channels in a sixteen plastic DIP.

• Collector-emitter voltage: 55 V (min)

• Isolation voltage: 5000 Vrms (min)

• UL recognized: UL1577, file no.E67349

• cUL recognized : CSA Component Acceptance Service No. 5A

File No.E67349

• Option (D4) type

VDE approved : EN60747-5-5

Maximum operating insulation voltage: 890 Vpk

Highest permissible over voltage: 8000 Vpk

Note: When an EN 60747-5-5 approved type is needed,

please designate the “Option(D4)”.

Current transfer ratio

Classification

(Note 1)

Current Transfer Ratio (min)

Marking

Classification

Ta = 25°C Ta = -25 to

75°C

IF = ±1mA

VCE = 0.5V

IF = ±0.5mA

VCE = 1.5V

IF = ±1mA

VCE = 0.5V

Rank BV 200% 100% 100% BV

Standard 100% 50% 50% BV, blank

Note 1: Only TLP626 is applied to BV rank items.

Note: Application type name for certification test,

please use standard product type name, i.e.

TLP626(BV): TLP626

TOSHIBA 11-5B2

Weight: 0.26 g (typ.)

TOSHIBA 11-10C4

Weight: 0.54 g (typ.)

TOSHIBA 11-20A3

Weight: 1.1 g (typ.)

Unit: mm

Start of commercial production

1984-04

Unit: mm

TLP626,TLP626-2,TLP626-4

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Pin Configuration (top view)

1 : Anode

Cathode

2 : Cathode

Anode

3 : Emitter

4 : Collector

TLP626

1, 3, 5, 7 : Anode, Cathode

2, 4, 6, 8 : Cathode, Anode

9, 11, 13, 15 : Emitter

10, 12, 14, 16 : Collector

TLP626–4

1, 3 : Anode

Cathode

2, 4 : Cathode

Anode

5, 7 : Emitter

6, 8 : Collector

TLP626–2

TLP626,TLP626-2,TLP626-4

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Absolute Maximum Ratings (Ta = 25°C)

Characteristic Symbol

Rating

Unit

TLP626

TLP626-2

TLP626-4

LED

Forward current IF 60 50 mA

Forward current derating ΔIF / °C -0.7 (Ta ≥ 39°C) -0.5 (Ta ≥ 25°C) mA / °C

Pulse forward current IFP 1 (100μs pulse,100pps) A

Diode Power dissipation PD 100 70 mW

Diode Power dissipation derating ΔPD / °C -1.2 (Ta ≥ 39°C) -0.7 (Ta ≥ 25°C) mW / °C

Junction temperature Tj 125 °C

Detector

Collector-emitter voltage VCEO 55 V

Emitter-collector voltage VECO 7 V

Collector current IC 50 mA

Collector power dissipation (1 circuit) PC 150 100 mW

Collector power dissipation derating

(Ta ≥ 25°C, 1 circuit) ΔPC / °C -1.5 -1.0 mW / °C

Junction temperature Tj 125 °C

Storage temperature range Tstg -55 to 125 °C

Operating temperature range Popr -55 to 100 °C

Lead soldering temperature Tsol 260 (10s) °C

Total package power dissipation (1 circuit) PT 250 150 mW

Total package power dissipation derating (Ta ≥ 25°C, 1 circuit) ΔPT / °C -2.5 -1.5 mW / °C

Isolation voltage (Note 1) BVS 5000 (AC, 60 s, R.H.≤60%) Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together.

Recommended Operating Conditions

Characteristic Symbol Min Typ. Max Unit

Supply voltage VCC ― 5 24 V

Forward current IF(RMS) ― 1.6 20 mA

Collector current IC ― 1 10 mA

Operating temperature Topr -25 ― 75 °C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.

TLP626,TLP626-2,TLP626-4

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Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

LED

Forward voltage VF IF = ±10mA 1.0 1.15 1.3 V

Reverse current IF VF = ±0.7V ― 2.5 20 μA

Capacitance CT V = 0 V, f = 1MHz ― 60 ― pF

Detector

Collector-emitter breakdown voltage V(BR)CEO IC = 0.5mA 55 ― ― V

Emitter-collector breakdown voltage V(BR)ECO IE = 0.1mA 7 ― ― V

Collector dark current ICEO

VCE = 24V ― 10 100 nA

VCE = 24V, Ta = 85°C ― 2 50 μA

Capacitance collector to emitter CCE V=0 V, f=1MHz ― 12 ― pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Current transfer ratio IC / IF

IF = ±1mA, VCE = 0.5V

rank BV(Note 2)

100 ― 1200

200 ― 1200

Low input CTR IC / IF(low) IF = ±0.5mA, VCE = 1.5V

rank BV(Note 2)

50 ― ―

100 ― ―

Collector-emitter saturation voltage VCE(sat)

IC = 0.5mA, IF = ±1mA ― ― 0.4

IC = 1mA, IF = ±1mA

rank BV(Note 2)

― 0.2 ―

― ― 0.4

Off-state collector current IC(off) VF = ±0.7V, VCE = 24V ― 1 10 μA

CTR symmetry (Note 1) IC(ratio) IC(IF = -1mA) / IC(IF = 1mA) 0.5 ― 2 ―

Note 1

IC(ratio) =

Note 2: Only TLP626 is applied to BV rank items.

Coupled Electrical Characteristics (Ta = -25 to 75°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Current transfer ratio IC / IF

IF = 1mA, VCE = 0.5V

rank BV(Note 1)

50 ― ―

100 ― ―

Low input CTR IC / IF(low) IF = 0.5mA, VCE = 1.5V

rank BV(Note 1)

― 50 ―

― 100 ―

Note 1: Only TLP626 is applied to BV rank items.

IF1 IC2

IC1

VCE

IF2

V)5

F1,

V)5

F2,

TLP626,TLP626-2,TLP626-4

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Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Capacitance input to output CS VS = 0 V, f = 1MHz ― 0.8 ― pF

Isolation resistance RS VS = 500V, R.H.≤60% 5×1010 1014 ― Ω

Isolation voltage BVS

AC, 60 s 5000 ― ―

Vrms

AC, 1 s, in oil ― 10000 ―

DC, 60 s, in oil ― 10000 ― Vdc

Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Rise time tr

VCC = 10V, IC = 2mA

RL = 100Ω

― 8 ―

μs

Fall time tf ― 8 ―

Turn-on time ton ― 10 ―

Turn-off time toff ― 8 ―

Turn-on time tON

RL = 4.7kΩ (Fig.1)

VCC = 5 V, IF = ±1.6mA

― 10 ―

μs

Storage time ts ― 50 ―

Turn-off time tOFF ― 300 ―

Fig. 1: Switching operating conditions

VCE

tON

tOFF

VCC

4.5V

0.5V

VCC

VCE

TLP626,TLP626-2,TLP626-4

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ΔVF / ΔTa – IF

Forward current IF (mA)

Forward voltage temperature

coefficient ΔVF/ΔTa (mV/°C)

-2.8

-0.4

0.3 50

0.1

-0.8

-1.2

-1.6

-2.0

-2.4

0.5 1 3 5 10 30

Pulse forward voltage VFP (V)

IFP – VFP

Pulse forward current IFP (mA)

1000

500

300

100

0.4 0.8 1.2 1.6 2.0 2.4

Pulse width ≤ 10 μs

Repetitive

Frequency = 100 Hz

Ta = 25 °C

120

Allowable forward current

IF (RMS) (mA)

IF – Ta

Ambient temperature Ta (°C)

100

-20

0 20 40 60 80 100

TLP626

TLP626-2, -4

Duty cycle ratio DR

Allowable pulse forward current

IFP (mA)

IFP – DR

5000

3000

1000

500

300

100

10-3 10-2 10-1 100

Pulse width ≤ 100 μs

Ta = 25 °C

Ambient temperature Ta (°C)

Allowable collector power

dissipation PC (mW)

PC – Ta

200

160

120

-20 0 20 40 60 80 100 120

TLP626

TLP626-2, -4

IF – VF

Forward voltage VF (V)

Forward current IF (mA)

100

0.1

0.4

0.5

0.3

06 0.8 1.0 1.2 1.4 1.6

Ta = 25 °C

TLP626,TLP626-2,TLP626-4

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Current transfer ratio IC / IF (%)

IC / IF – IF

Forward current IF (mA)

1000

0.1

500

300

0.3 0.5 1 3 5 10

100

Ta = 25 °C

VCE = 5 V

VCE = 1.5 V

VCE = 0.5 V

Ambient temperature Ta (°C)

Collector current IC (mA)

IC – Ta

0.03

-20

0.5

0.3

0 20 40 60 80 100

0.1

0.05

VCE = 1.5 V

VCE = 0.5 V

0.2 mA

0.5 mA

1 mA

IF = 2 mA

IC – VCE

Collector-emitter voltage VCE (V)

Collector current IC (mA)

4.0

3.5

2.0

1.0

0.5

1.5

3.0

2.5

0.1 0.3 0.5 1 3 5

Ta = 25 °C IF = 1.0 mA

0.8 mA

0.6 mA

0.5 mA

0.4 mA

0.2 mA

IC – IF

Forward current IF (mA)

Collector current IC (mA)

0.01

0.1

0.5

0.3

0.05

0.03

0.3 0.5 1 3 5 10

0.1

Ta = 25 °C

VCE = 5 V

VCE = 1.5 V

VCE = 0.5 V

TLP626,TLP626-2,TLP626-4

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Ambient temperature Ta (°C)

Collector dark current ICEO (μA)

ICEO – Ta

10-5

101

100

10-1

10-2

10-3

20 40 60 80 100 120

10-4

5 V

VCE = 24 V

10 V

Load resistance RL (kΩ)

Switching time (μs)

Switching Time – RL

3000

1000

500

300

100

3 5 10 30 50 100

Ta = 25 °C

IF = 1.6 mA

VCC = 5 V

tOFF

tON

TLP626,TLP626-2,TLP626-4

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relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for

Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for

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