June 201 1
FDS89161LZ Dual N-Channel PowerTrench® MOSFET
©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDS89161LZ Rev. C4
FDS89161LZ
Dual N-Channel PowerTrench® MOSFET
100 V, 2.7 A, 105 mΩ
Features
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A
Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
CDM ESD protection level > 2KV typical (Note 4)
100% UIL Tested
RoHS Compliant
General Description
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced Power Trench® process
that has been special tailored to minimize the on-state
resisitance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
Application
DC-DC conversion
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 100 V
VGS Gate to Source Voltage ±20 V
IDDrain Current -Continuous 2.7 A
-Pulsed 15
EAS Single Pulse Avalanche Energy (Note 3) 13 mJ
PDPower Dissipation TC = 25 °C 31 W
Power Dissipation TA = 25 °C (Note1a) 1.6
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case (Note 1) 4.0 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78
Device Marking Device Package Reel Size Tape Width Quantity
FDS89161LZ FDS89161LZ SO-8 13 ’’ 12 mm 2500 units
G2
S1
G1
S2
D2
D2
D1
D1
Pin 1
SO-8
D1
D1
D2
D2
S2
S1 G1
G2
4
3
2
1
5
6
7
8
Q2
Q1
FDS89161LZ Dual N-Channel PowerTrench® MOSFET
©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FDS89161LZ Rev. C4
Electrical Characteristics TJ = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, referenced to 25 °C 68 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA
IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 μA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA11.72.2V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250 μA, referenced to 25 °C -6 mV/°C
rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 2.7 A 81 105 mΩVGS = 4.5 V, ID = 2.1 A 110 160
VGS = 10 V, ID = 2.7 A, TJ = 125 °C 140 182
gFS Forward Transconductance VDS = 10 V, ID = 2.7 A 7.8 S
Ciss Input Capacitance VDS = 50 V, VGS = 0 V,
f = 1MHz
227 302 pF
Coss Output Capacitance 44 58 pF
Crss Reverse Transfer Capacitance 3 4 pF
RgGate Resistance 0.9 Ω
td(on) Turn-On De lay Time VDD = 50 V, ID = 2.7 A,
VGS = 10 V, RGEN = 6 Ω
3.8 10 ns
trRise Time 1.2 10 ns
td(off) Turn-Off Delay Time 9.5 17 ns
tfFall Time 1.6 10 ns
Qg(TOT) Total Gate Charge VGS = 0 V to 10 V VDD = 50 V,
ID = 2.7 A
3.8 5.3 nC
Qg(TOT) Total Gate Charge VGS = 0 V to 5 V 2.1 2.9 nC
Qgs Gate to Source Charge 0.7 nC
Qgd Gate to Drain “Miller” Charge 0.7 nC
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.7 A (Note 2) 0.8 1.3 V
VGS = 0 V, IS = 2 A (Note 2) 0.8 1.2
trr Reverse Recovery Time IF = 2.7 A, di/dt = 100 A/μs 31 56 ns
Qrr Reverse Recovery Charge 20 36 nC
b) 135°C/W when
mounted on a
minimun pad
a) 78°C/W when
mounted on a 1 in2
pad of 2 oz copper
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 materia l. RθJC is guar anteed by de sign while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 0.3 mH, IAS =25 A, VDD = 27 V, VGS = 10V.
4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDS89161LZ Dual N-Channel PowerTrench® MOSFET
©2011 Fairchild Semiconducto r Corporation 3 www.fairchildsemi.com
FDS89161LZ Rev. C4
Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted
Figure 1.
012345
0
3
6
9
12
15 VGS = 8 V
VGS = 3.5 V
VGS = 6 V
PULSE DU R ATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS =5 V
VGS = 4 V
VGS = 10 V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
03691215
0
1
2
3
4
VGS = 4 V
VGS = 3.5 V
PULSE DU R ATION = 80 μs
DUTY CYCLE = 0.5% MA X
NORMALIZED
DRAIN TO SOU RC E ON-RESISTA NCE
ID, DRAIN CURRENT (A)
VGS = 5 V
VGS = 6 V
VGS = 8 V VGS = 10 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On-Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 2.7 A
VGS = 10 V
NORMALIZED
DRAIN TO SO UR CE ON-RESIST AN CE
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Te mperature Figure 4.
246810
0
100
200
300
400
500
TJ = 125 oC
ID = 2.7 A
TJ = 25 oC
VGS, GA TE TO SOUR C E VOL TA GE (V)
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0246810
0
3
6
9
12
15
TJ = 150 oC
VDS = 50 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
20
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
IS, REVERSE DRAIN CU RR ENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current
FDS89161LZ Dual N-Channel PowerTrench® MOSFET
©2011 Fairchild Semiconducto r Corporation 4 www.fairchildsemi.com
FDS89161LZ Rev. C4
Figure 7.
012345
0
2
4
6
8
10
ID = 2.7 A
VDD = 50 V
VDD = 25 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 75 V
Gate Charge Characteristics Figure 8.
0.1 1 10 100
1
10
100
400
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01 0.1 1 2
1.0
1.5
2.0
2.5
3.0
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVA LANCHE (m s )
IAS, AVALANCHE CURRENT (A)
Unc l amp e d Ind u ctiv e
Switching Capability Figure 10.
Maximum Continuous Drain
Current vs Ambient Temperature
Figure 11. Gate Leakage Current vs
Gate to Source Voltage
0 5 10 15 20 25 30 35
10-9
10-8
10-7
10-6
10-5
10-4
10-3
10-2
10-1
VDS = 0 V
TJ = 25 oC
TJ = 125 oC
VGS, G ATE TO SO URCE VOLTAGE (V)
Ig, GATE LEAK AG E CURR ENT (A)
Figure 12.
0.1 1 10 100 400
0.005
0.01
0.1
1
10
20
10 s
100 us
10 ms
DC
1 s
100 ms
1 ms
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURC E VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 135 oC/W
TA = 25 oC
Forward Bias Safe
Operating Area
Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted
FDS89161LZ Dual N-Channel PowerTrench® MOSFET
©2011 Fairchild Semiconducto r Corporation 5 www.fairchildsemi.com
FDS89161LZ Rev. C4
Figure 13. Single Pulse Maximum Power Dissipation
10-4 10-3 10-2 10-1 11010
2103
0.5
1
10
100
1000
P(PK), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 135 oC/W
TA = 25 oC
t, PULSE WIDTH (sec)
Figure 14.
10-4 10-3 10-2 10-1 110
100 1000
0.001
0.01
0.1
1
2
SINGLE PULSE
RθJA = 135 oC/W
DUTY CYCLE-DESCEN D ING O R DER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE D U R ATION (sec)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
PDM
t1t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Junction-to-Ambient Transient Thermal Response Curve
Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted
FDS89161LZ Dual N-Channel PowerTrench® MOSFET
©2011 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com
FDS89161LZ Rev. C4
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Definition of Terms
AccuPower™
Auto-SPM™
AX-CAP™*
BitSiC®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
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EfficentMax™
ESBC™
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Fairchild Semiconductor®
FACT Quiet Series™
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FlashWriter® *
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F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptiHiT™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W /kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
The Power Franchise®
The Right Technology for Your Success™
®
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC®
TriFault Detect™
TRUECURRENT®*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
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Rev. I54