NTE5442 thru NTE5448
Silicon Controlled Rectifier (SCR)
8 Amp
Description:
The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package de-
signed for high–volume consumer phase–control applications such as motor speed, temperature,
and light controls, and for fast switching applications in ignition and starting systems, voltage regula-
tors, vending machines, and lamp drivers.
Features:
DSmall, Rugged Construction
DPractical Level Triggering and Holding Characteristics @ +25°C:
IGT = 7mA Typ
IHold = 6mA Typ
DLow “ON” Voltage: VTM = 1V Typ @ 5A @ +25°C
DHigh Surge Current Rating: ITSM = 80A
Absolute Maximum Ratings: (Note 1, TJ = +100°C unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 2), VDRM or VRRM
NTE5442 50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5444 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5446 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5448 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Non–Repetitive Peak Reverse Blocking Voltage (t = 5ms (max) duration), VRSM
NTE5442 75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5444 300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5446 500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5448 700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (All Conduction Angles), IT(RMS) 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average On–State Current (TC = +73°C), IT(AV) 5.1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Non–Repetitive Surge Current, ITSM
(1/2 cycle, 60Hz preceeded and followed by rated current and voltage) 80A. . . . . . . . . . . . .
Circuit Fusing (TJ = –40° to +100°C, t = 1ms to 8.3ms), I2t 25A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power, PGM 5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power, PG(AV) 500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Current, IGM 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Gate Voltage, VRGM 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction–to–Case, RthJC 2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction–to–Ambient, RthJA 40°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. NTE5444 and NTE5446 are discontinued devices and are replaced by NTE5448.
Note 2. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied
concurrently with a negative potential on the anode. When checking forward or reverse
blocking capability, thyristor devices should not be tested with a constant current source in
a manner that the voltage applied exceeds the rated blocking voltage.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Forward or Reverse IDRM,Rated VDRM or VRRM,TJ = +25°C– – 10 µA
Blocking Current IRRM Gate Open TJ= +100°C– – 2 mA
Gate Trigger Current IGT VD = 7V, RL = 100ΩTC = +25°C–7 30 mA
(Continuous DC) TC = –40°C– – 60 mA
Gate Trigger Voltage VGT VD = 7V, RL = 100ΩTC = +25°C–0.75 1.5 V
(Continuous DC) TC = –40°C– – 2.5 V
VD = Rated VDRM, RL = 100Ω, TJ = +100°C 0.2 – – V
Peak On–State Voltage VTM Pulse Width = 1m s to 2 ms,
≤
ITM = 5Apeak –1.0 1.5 V
Duty Cycle ≤ 2% ITM = 15.7Apeak – – 2.0 V
Holding Current IHold VD = 7V, Gate Open TC = +25°C–6 40 mA
TC = –40°C– – 70 mA
Gate Controlle d Turn–On Time tgt ITM = 5A, IGT = 20mA, V D = Rated VDRM –1–µs
Circuit Commutated Turn–Off tqITM = 5A, IR = 5A –15 –µs
Time TJ= +100°C–20 –µs
Critical Rate–of–Rise of
Off–State Voltage dv/dt VD = Rated VDRM, Exponential Waveform,
TJ = +100°C, Gate Open –50 –V/µs
.530 (13.4) Max
.668
(17.0)
Max
.655
(16.6)
Max
.166 (4.23)
.150 (3.82) MaxHeat Sink Contact
Area (Bottom)
.143 (3.65) Dia Thru
A (Heat Sink Area)
KG