Single Diode D1FS4 Schottky Barrier Diode Msi OUTLINE Package : 1F 40V 1.1A e/ (SMD Pans 7) (D> l/ 2 x GREE eat vF VIR DC/DCIVI\-4 o RMB, 7s, OA #83 GE. K-97 LHR BtKX RATINGS Small SMD Parsm Rating Switching Regulator 5 DC/DC Converter Home Appliance, Game, Office Automation Communication, Portable set AVKFe fe hode mark inl Type No. Weight 0.058(Typ) iba) Unit?!mm SNM TSEC Webt 4 bMS CREE Favs, lI Ove RAR CMR F So. For details of the outline dimensions, o it Wax) & OSI refer to our web site or Semiconductor Short Form Catalog. As for the marking, refer to the specification "Marking, Terminal Connection". @xtRAZH Absolute Maximum Ratings (hee TI=25C) i 4 aly : th % Huy, Item Symboll conditions Type No. DIFS4 Unit Ceti iit ME pS 9 Storage Temperature Ts tg 99~ 150 ie Tey bike : 9 Operation Junction Temperature Tj 150 Cc +f A SLE r Maximum Reverse Valtage Va 40 V 0 LtAM+ Yaa +8 AGO.5ms, duty 1/40 y Repetitive Peak Surge Reverse Voltage Vrrsm Pulse width 0.5ms, duty 1/40 45 V asic Fi twee HD alae I 50Hz kai, BULA AT Ta= 510 On alumina substrate Lt A Average Rectified Forward Current o 50Hz sine wave, Resistance load Ta=44c Ti y b MAR a=44C 6h glass-epoxy substrate 0.85 tt AL MTR i 50Hz Esk, JFARO GR LIA 2 eat AA, Ti = 125 30 A Peak Surge Forward Current M 50Hz sine wave, Non-repetitive 1 cycle peak value, T)=125C #0 BLAM Pi : AROS, T]=25T NT Repetitive Peak Surge Reverse Power | PRRSM | pulse width 10s, Tj 25C 60 W @BRh- AHH Electrical Characteristics (HDs TI=25C) TE ao OL AE ; Forward Voltage Vr Ip=1.1A, Pulse measurement MAX 0.55 V AOA r= 2 Fe ! Reverse Current Tr Vr=VRM, pulse measurement MAX 1 mA fr Feit : IMU = 1W9V Tae capaci Cj | f=1MHz, Ve=10V TYP 65 pF . EAU EM AX djl Junction to lead MAX 23 STL TS THEME fl Thermal Resistance * JE rh HAI On alumina substrate MAX 108 C/W Bia Junction to ambient Ty ba MAX 157 On glass-epoxy substrate : 44 (J532-1) www.shindengen.co.jp/product/semilSmall SMD Mist CHARACTERISTIC DIAGRAMS Single SBD D1FS4 NET Tea Fat Forward Voltage T= 1SPC(MAX) T= 1SrC(TYP) + T= 25C(MAX)1 Ti= 2C(TYP) Forward Current Ir (A) (Pulse measurement) Forward Voltage Vr (V) NEF 7738 thee Forward Power Dissipation 4-7 E=4--tohb ! rip J Deptt Tj = 1a Forward Power Dissipation Pr [W) Average Rectified Forward Current Io (A) PAR ORG iii Peak ee Forward Current Capability Sine wave Toms 10ms! cycle [Non Ln) Peak Surge Forward Current Irsm (A) Number of Cycles [cycle] AR RHE Reverse Current T= 12s'C(TYP Tr=107C T= TC(TYP) Reverse Current In (mA) [Pulse measurement) Reverse Voltage Vr [V) PRARAR Reverse Power Dissipation 0 i TT Wut TT Tipe D= 006 I 1m 1 D=tp/ Tp=148re! Reverse Power Dissipation Pr [W) Reverse Voltage Vr [VJ HeaaR Junction Capacitance Junction Capacitance Cj (pF) Reverse Voltage Vr (V] F4bF4yvINT Ta-lo Derating Curve Ta-lo On alumina substrate lichen Tan Conductor layer 20k Substrate thickness O04! -fFE bb Average Rectified Forward Current Io (A) Ambient Temperature Ta (C) F4lF4vINT Ta-lo Derating Curve Ta-lo _|_ On glass-epoxy substrate (eee la Conduetar b Average Rectified Forward Current Io (A) Ambient Temperature Ta (C) BOIBLEARY TAP ee Repetitive Surge Reverse Power Derating Curve Ve Ver am 4 Tet ip: Prrsnt=TkeX VRP Prrsm Derating (%) Operation Junction Temperature Tj (C) MOBLEAMY-VERARE Repetitive Surge Reverse Power Capability Jen = rips Prem =leex Var Ratio of Prrsm(tp)/ Prrsm (tp= 10s) Pulse Width tp [ys] * Sine wave (i50Hz THE LTV ET. * S0Hz sine wave is used for measurements. RR DOORS -MEAY IL 789 Sai otTN ET. Typical SHENK Se RL ET %* Semiconductor products generally have characteristic variation. Typical is a statistical average of the device's ability. www.shindengen.co.jp/product/semi/ (J532-1) 45