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MPSA05 / MMBTA05 — NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA05 / MMBTA05 Rev. 1.3
September 2015
MPSA05 / MMBTA05
NPN General-Purpose Amplifier
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Marking Package Packing Method
MPSA05RA MPSA05 TO-92 3L Tape and Reel
MMBTA05 1H SOT-23 3L Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 4.0 V
ICCollector Current - Continuous 500 mA
TJ , TSTG Junction and Storage Temperature -55 to +150 °C
1. Emitter
123123
Straight Lead Bent Lead
TO-92
Bulk Packing Tape & Reel
Ammo Packing
2. Base
3. Collector
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: 1H
Description
This device is designed for general-purpose amplifier
applications at collector currents to 300 mA. Sourced
from process 10.
MPSA05 / MMBTA05 — NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA05 / MMBTA05 Rev. 1.3 2
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
1. Device mounted on FR-4 PCB 1.6” × 0.06"
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
2. Pulse test: pulse width 300 μs, duty cycle 2.0%.
Symbol Parameter Max. Unit
MPSA05 MMBTA05(1)
PD
Total Device Dissipation 625 350 mW
Derate Above 25°C 5.0 2.8 mW/°C
RθJC Thermal Resistance, Junction-to-Case 83.3 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 200 357 °C/W
Symbol Parameter Conditions Min. Max. Unit
V(BR)CEO
Collector-Emitter Breakdown
Voltage(2) IC = 1 mA, IB = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 4 V
ICEO Collector Cut-Off Current VCE = 60 V, IB = 0 0.1 μA
ICBO Collector Cut-Off Current VCB = 60 V, IE = 0 0.1 μA
hFE DC Current Gain IC = 10 mA, VCE = 1.0 V 100
IC = 100 mA, VCE = 1.0 V 100
VCE(sat) Collector-Emitter Saturation
Voltage IC = 100 mA, IB = 10 mA 0.25 V
VBE(on) Base-Emitter On Voltage IC = 100 mA, VCE = 1.0 V 1.2 V
fTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 2 V,
f = 100 MHz 100 MHz
MPSA05 / MMBTA05 — NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA05 / MMBTA05 Rev. 1.3 3
Physical Dimensions
Figure 1. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form
MPSA05 / MMBTA05 — NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA05 / MMBTA05 Rev. 1.3 4
Physical Dimensions (Continued)
Figure 2. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
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Rev. I77
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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